DIODE MARKING W2 Search Results

diode marking w2

Abstract: 1N4448WS marking code w2 sod323 W2 marking sod323 marking w2
Contextual Info: 1N4448WS SILICON EPITAXIAL PLANAR DIODE Fast Switching Diode PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Reverse Voltage

BAV16WS

Abstract: "MARKING CODE W2" w2 surface mount diode
Contextual Info: BAV16WS SURFACE MOUNT FAST SWITCHING DIODE PINNING DESCRIPTION PIN Features • Fast switching speed • Ultra-small surface mount package • For general purpose switching applications • High conductance 1 Cathode 2 Anode 2 1 W2 Top View Marking Code: "W2"

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL SWITCHING DIODE BAS216WS SOD-323 PLASTIC PCAKAGE Marking BAS216WS=W2 with cathode band ABSOLUTE MAXIMUM RATINGS Ta=25ºC SYMBOL VALUE UNIT VRRM 85

"MARKING CODE W2"

Abstract: marking 25 SOD-323 SDS511 marking HE SDS511 semtech w2 fast recovery diode
Contextual Info: SDS511 Switching Diode Features • Ultra high speed switching application • Low forward voltage • Fast reverse recovery time • Small total capacitance PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol

W2 SOD323

Abstract: MARKING W2 "MARKING CODE W2" marking w2 diode
Contextual Info: BAV70WS SWITCHING DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 70 V Average Rectified Forward Current

marking 25 SOD-323

Abstract: W2 SOD323 diode marking w2 w2 fast recovery diode Fast reverse recovery W2
Contextual Info: 1SS511WS SWITCHING DIODE PINNING Features • Ultra high speed switching application • Low forward voltage • Fast reverse recovery time • Small total capacitance DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol

diode marking w2

Abstract: marking code W2 "marking code w2" marking 25 SOD-323 BAS216WS marking W2
Contextual Info: BAS216WS High Speed Switching Diode PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit VRRM 85 V Reverse Voltage VR 75 V Continuous Forward Current

diode marking w2

Abstract: marking 25 SOD-323 marking w2 diode
Contextual Info: BAW56WS HIGH-SPEED SWITCHING DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit VRRM 85 V Reverse Voltage VR 75 V Continuous Forward Current

SOT23 component marking code KA

Abstract: MARKING W2 SOT23 Marking W3 marking code w2 sot23 BAT54 BAT54A BAT54C BAT54S Schottky Diode Marking sot-23 sot-23 Marking L43
Contextual Info: BAT54/A/C/S BAT54/A/C/S BAT54/A/C/S Connection Diagrams: 3 3 BAT54 3 BAT54A Top Marking BAT54 = L4P BAT54A = L42 BAT54C = L43 BAT54S = L44 2 1 2 NC 1 BAT54S BAT54C 2 1 2 1 3 3 1 2 Schottky Barrier Diode Sourced from Process KA. Schottky Barrier Diode Sourced from

marking l30

Abstract: 1N4150 BAV23S MMBD1201 MARKING W2 SOT23 SOT23 DIODE marking CODE AV wA MARKING SOT-23 SERIES DIODE L30 SOT23 sot-23 Marking 3p wc diode sot23
Contextual Info: BAV23S BAV23S Top Marking: L30 3 2 Connection Diagram: 3 2 1 1 High Voltage General Purpose Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units IF AV Average Rectified Current 200 mA IFSM Non-repetitive Peak Forward Surge Current

fairchild sot-23 bav70

Abstract: sot-23 body marking A4 MARKING W2 SOT23 BAV70 ON marking code w2 sot23 fairchild s sot-23 Device Marking BAV70 BAV74 BAV99 sot-23 MARKING CODE A4
Contextual Info: BAV70 / BAV74 BAV70 / 74 3 CONNECTION DIAGRAMS A4 3 1 2 SOT-23 3 1 BAV70 2 MARKING A4 BAV74 1 JA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

marking P2 sot-23

Abstract: marking wa sot-23
Contextual Info: CONNECTION DIAGRAMS 3 3 3 1201 3 1203 24 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204 27 MMBD1203 26 MMBD1205 28 1 1 2 3 3 1204 1 1205 2 1 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

transistor 1201 1203 1205

Abstract: MMBD1201 MMBD1203 MMBD1204A MMBD1205A wA MARKING SOT-23 SERIES DIODE marking P2 sot-23 fairchild s sot-23 Device Marking
Contextual Info: CONNECTION DIAGRAMS 3 3 1201 3 1203 24 3 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 1 1 2 3 3 1204 1 2 1 1205 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

U840 diode motorola

Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Contextual Info: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in

Relay schrack RU

Abstract: 8 PIN DPDT RELAY 24V dc omron RELAY PCB DPDT 12V omron relay G2R-2 8 pin 12V DC relay finder 12V DC Allen-Bradley 700-hn126 Allen-Bradley 700-HN121 DPDT relay 12v 8 PIN DPDT RELAY 12V idec SH2B-05
Contextual Info: Relay selection guide 05a2 7/15/05 12:33 PM Page 1 RJ Relay RQ Relay RR Relay RY Relay Compact size for maximum space- ● Compact, printed circuit board relay ● 100% robotic assembled ● Small industrial 10A GP relay ● Rugged industrial 10A relay ●

diode w8 sod123

Abstract: BZT52C2V4 BZT52C2V7 BZT52C3V0 BZT52C3V3 BZT52C3V6 BZT52C3V9 BZT52C4V3 BZT52C4V7 BZT52C5V1
Contextual Info: Surface mount zener diode FEATURES Pb z Planar die construction. 500mW power dissipation on ceramic PCB. General purpose, medium current. z Ideally suited for automated assembly processes. z z BZT52C2V4-BZT52C51 Lead-free APPLICATIONS z Zener diode. z Ultra-small surface mount package.

MOSFET and parallel Schottky diode

Abstract: CBVK741B019 F63TNR FDD6680 FDD6690A FDD6690S
Contextual Info: FDD6690S 30V N-Channel PowerTrench SyncFET General Description Features The FDD6690S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

138A1

Contextual Info: FDD6670S 30V N-Channel PowerTrench SyncFET General Description Features The FDD6670S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

high voltage mosfet, to-220 case

Contextual Info: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: FDP6690S/FDB6690S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

FDW2501NZ

Abstract: 2501NZ DIODE marking S4 06 2502P CBHK741B019 F63TNR FDW2502P
Contextual Info: FDW2501NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

B667

Abstract: CBVK741B019 FDB6676S FDP6676 FDP6676S FDP7060 Schottky diode TO220
Contextual Info: FDP6676S / FDB6676S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: FDP6670S/FDB6670S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

2502P

Abstract: CBHK741B019 F63TNR FDW2502P FDW2507NZ
Contextual Info: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains