DIODE MARKING GC Search Results

dALLAS MARKING CODE

Abstract: fast recovery diode 600v 5A SC201 SC201-2 SC201-4 SC201-6 diode MARKING CODE GC
Contextual Info: SC201 0.5A ( 200V to 600V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability GA Applications

diode 10dl

Contextual Info: ZOWIE Low VF Rectifier Diode GC10DLH THRU GC10MLH Low VF Rectifier Diode OUTLINE DIMENSIONS FEATURES Case : 2010 Halogen-free type Lead free product, compliance to RoHS GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead less chip form, no lead damage

marking code GC diode

Contextual Info: ZOWIE Low VF Rectifier Diode GC20DLH THRU GC20MLH Low VF Rectifier Diode OUTLINE DIMENSIONS FEATURES Case : 2010 Halogen-free type Lead free product, compliance to RoHS GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead less chip form, no lead damage

Contextual Info: ZOWIE Rectifier Diode 200V~1000V / 1.0A GC10DH THRU GC10MH FEATURES OUTLINE DIMENSIONS Halogen-free type Lead free product, compliance to RoHS GPRC (Glass passivated rectifier chip) inside Glass passivated cavity-free junction Lead less chip form, no lead damage

Contextual Info: ZOWIE Rectifier Diode 200V~1000V / 2.0A GC20DH THRU GC20MH OUTLINE DIMENSIONS FEATURES Halogen-free type Lead free product, compliance to RoHS GPRC (Glass passivated rectifier chip) inside Glass passivated cavity-free junction Lead less chip form, no lead damage

65a3

Abstract: be5a IPB025N10N3G V9910 95E-9
Contextual Info: IPB025N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc *&- Y" I9 )0( 6 P GCA5=5<H <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH

LE17

Abstract: MIL-PRF19500 QR217 1N5806-DLCC2 1n5806d
Contextual Info: ULTRAFAST RECOVERY RECTIFIER DIODE 1N5806DLCC2 • Hermetic Ceramic Package Designed as a DropIn Replacement for D-5A MELF Package • Designed For High Reliability Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS Tamb = 25°C unless otherwise stated

Contextual Info: SILICON EPITAXIAL PLANAR DIODE 1N6642D2A / 1N6642D2B 1N6642D2C / 1N6642D2D • • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”B-MELF” Package. Suitable for general purpose, switching applications.

1N6642

Abstract: LE17 MIL-PRF19500 QR217 l2d diode
Contextual Info: SILICON EPITAXIAL PLANAR DIODE 1N6642DLCC2 • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available

1N4148DLCC2

Abstract: LE17 MIL-PRF19500 QR217
Contextual Info: SILICON EPITAXIAL PLANAR DIODE 1N4148DLCC2 • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available

GC smd diode

Abstract: IOA10 smd marking gc diode
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF30JC4 Unit-m m W e ig h t 1.5g Typ 10.2 40V 30A Feature • SMD • SMD • <SlR=0.7mA • Low lR=0.7mA • S iy R T È ÎE iË c I l_y (<_ <L U'' • Resistance for thermal run-away • High lo Rating-Small-RKG

1N4620

Abstract: LE17 MIL-PRF19500 QR217 Low Noise Zener Diode CVP zener diode
Contextual Info: LOW NOISE ZENER DIODE 1N4620DLCC2 • • • • • • Low Leakage Low Current Low Noise Standard ±5% Zener Voltage Tolerance Hermetic Ceramic Surface Mount Package Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

SML05SC12D3

Abstract: LE17 MIL-PRF19500 QR217 schottky rectifier diode
Contextual Info: SILICON CARBIDE SCHOTTKY RECTIFIER DIODE SML05SC12D3 • • • • • • Hermetic Ceramic Surface Mount Package “D-5B” / “E-MELF” Compatible Footprint 1200V, 5A, Schottky Rectifier Zero Forward and Reverse Recovery High Frequency Operation Fast Temperature Independent Switching

1N750A

Abstract: LE17 MIL-PRF19500 QR217
Contextual Info: 500mW ZENER DIODE 1N750AD1 Standard ±5% Zener Voltage Tolerance. Hermetic Ceramic Surface Mount Package. Space Level and High-Reliability Screening Options Available. • • • ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VF IZM IZSM PT

1N4565

Abstract: 6.4v zener diode temperature compensated zener diode 8251 1N4565A 1N4566 1N4566A 1N4567 1N4567A 1N4568
Contextual Info: 6.4V TEMPERATURE COMPENSATED ZENER DIODE 1N4565 - 1N4584ADLCC2 • Hermetic Ceramic Surface Mount Package • 6.4V ±5% Reference Voltage • Stable over a wide temperature range • Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

Contextual Info: IRGP6640DPbF IRGP6640D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 40A, TC =100°C tSC 5µs, TJ max = 175°C G C G IRGP6640DPbF TO-247AC E VCE(ON) typ. = 1.65V @ IC = 24A n-channel

AED05020-100

Contextual Info: 24 23 21 22 19 20 17 IB 16 15 14 11 12 13 7L 10 7 8 SYMBOL D E F I N I T I O N M IS S IN G SYMBOLS A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. M TOTAL NO OF INSPECTIONS

IRG7PH46UDPBF

Abstract: 028005
Contextual Info: PD - 97498A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient

ci 4946

Abstract: IRG7PH42UD-EP irg7ph42ud-e IRG7PH42UDPBF
Contextual Info: PD - 97391B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient

ci 4946

Abstract: IRG7PH42UDPBF 4946 irg7ph42ud C-150 IRG7PH42UD-EP irg7ph42ud-e
Contextual Info: PD - 97391B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient

Diode Marking 1N4004

Abstract: VIN11
Contextual Info: HV254 32-Channel High Voltage Amplifier Array Features General Description ► ► ► ► The Supertex HV254 is a 32-channel, high voltage, amplifier array integrated circuit. It operates on a 275V high voltage supply and two low voltage supplies: +5.0V and -5.0V. Each

IRG7PH42UD1-EP

Abstract: IRG7PH42UD1PbF induction heating Circuit P channel 600v 30a IGBT 035H C-150 IRFPE30 IRGP30B120KD-E 6 pulse IGBT single line drawing 600v 30a IGBT
Contextual Info: PD - 97480 IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA

IRG7PH35UD1PbF

Abstract: IRG7PH35UD1 IRG7PH35UD1-EP P channel 600v 20a IGBT irg7ph35 C-150 IRG7PH35U IRG7PH35UD ir igbt 1200V 10A igbt 20A 1200v
Contextual Info: PD - 97455 IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA

Contextual Info: PD - 96219 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRG7PH42UD2PbF IRG7PH42UD2-EPbF Features • • • • • • • • Low VCE ON Trench IGBT Technology Low Switching Losses Square RBSOA