DIODE MARKING F3 Search Results

ICE3A1065L

Abstract: ICE3A1565L ICE3B0365L surge lightning to smps ICE3A1065l equivalent transistor Triggered spark gap diode C10 325KT ICE3B0365 INFINEON PART MARKING
Contextual Info: Version 2.0, 8 May 2006 CoolSET -F3 ICE3 B03 6 5 L ICE3 A10 6 5 L ICE3 A15 6 5 L Off-Line SMPS Current Mode Controller with integrated 650V Startup Cell/Depletion CoolMOS™ and Latched off Mode Power Management & Supply N e v e r s t o p t h i n k i n g .

VEMI355A-HA3

Contextual Info: VEMI355A-HA3 Vishay Semiconductors 3-Channel EMI-Filter with ESD-Protection FEATURES • Ultra compact LLP75-7A package 6 5 • 3-channel EMI-filter and ESD-protection 4 • Low leakage current 7 • Line resistance RS = 50 Ω 1 2 • Typical cut off frequency f3dB = 100 MHz

LLP1713-9L

Abstract: VEMI45AA-HNH
Contextual Info: VEMI45AA-HNH Vishay Semiconductors 4-Channel EMI-Filter with ESD-Protection Features • • • • • • • Ultra compact LLP1713-9L package Low package profile of 0.6 mm e3 4-channel EMI-Filter Low leakage current Line resistance RS = 100 Ω Typical cut off frequency f3dB = 100 MHz

Contextual Info: VEMI45AA-HNH Vishay Semiconductors 4-Channel EMI-Filter with ESD-Protection Features • • • • • • • Ultra compact LLP1713-9L package Low package profile of 0.6 mm 4-channel EMI-filter e3 Low leakage current Line resistance RS = 100 Ω Typical cut off frequency f3dB = 100 MHz

ICE3B1565J

Abstract: ICE3B0365J ice*3b0365j ICE3B0365J equivalent ice3b0565j b0565 surge lightning to smps Triggered spark gap 1565J CoolMOS Power Transistor
Contextual Info: Version 2.3, 8 May 2006 CoolSET -F3 Jitter Version ICE3 B03 6 5 J ICE3 B05 6 5 J ICE3 B15 6 5 J Off-Line SMPS Current Mode Controller with integrated 650V Startup Cell/Depletion CoolMOS™ Power Management & Supply N e v e r s t o p t h i n k i n g . CoolSET™-F3

LLP3313-17L

Abstract: VEMI85AC-HGK
Contextual Info: VEMI85AC-HGK Vishay Semiconductors 8-Channel EMI-Filter with ESD-Protection FEATURES • Ultra compact LLP3313-17L package • Low package profile of 0.6 mm • 8-channel EMI-filter • Low leakage current • Line resistance RS = 100 Ω • Typical cut off frequency f3dB = 240 MHz

Contextual Info: VEMI65AA-HCI Vishay Semiconductors 6-Channel EMI-Filter with ESD-Protection Features • • • • • • • Ultra compact LLP2513-DL package Low package profile of 0.6 mm 6-channel EMI-Filter e3 Low leakage current Line resistance RS = 100 Ω Typical cut off frequency f3dB = 100 MHz

Contextual Info: New Product VS-APU3006-F3, VS-APU3006-N3, VS-EPU3006-F3, VS-EPU3006-N3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 30 A FRED Pt FEATURES • Low forward voltage drop • Ultrafast recovery time • 175 °C operating junction temperature TO-247AC

Contextual Info: VEMI35AA-HAF www.vishay.com Vishay Semiconductors 3-Channel EMI-Filter with ESD-Protection FEATURES • Ultra compact LLP75-7L package • 3-channel EMI-filter and ESD-protection 6 5 4 • Low leakage current 7 • Line resistance RS = 100  • Typical cut off frequency f3dB = 100 MHz

Contextual Info: VEMI353A-HAF www.vishay.com Vishay Semiconductors 3-Channel EMI-Filter with ESD-Protection FEATURES 6 5 • Ultra compact LLP75-7L package 4 • 3-channel EMI-filter and ESD-protection 7 • Low leakage current 1 2 • Line resistance RS = 30  3 • Typical cut off frequency f3dB = 100 MHz

Contextual Info: VEMI85AB-HGK www.vishay.com Vishay Semiconductors 8-Channel EMI-Filter with ESD-Protection FEATURES • Ultra compact LLP3313-17L package • Low package profile of 0.6 mm • 8-channel EMI-filter • Low leakage current • Line resistance RS = 100  • Typical cut off frequency f3dB = 130 MHz

Contextual Info: VEMI85AA-HGK www.vishay.com Vishay Semiconductors 8-Channel EMI-Filter with ESD-Protection FEATURES • Ultra compact LLP3313-17L package • Low package profile of 0.6 mm • 8-channel EMI-filter • Low leakage current • Line resistance RS = 100  • Typical cut off frequency f3dB = 100 MHz

VS-30ETH06FP-F3

Contextual Info: New Product VS-30ETH06FP-F3, VS-30ETH06FP-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES • Reduced Qrr and soft recovery • 175 °C TJ maximum • For PFC CRM/CCM operation 1 Cathode • Fully isolated package VINS = 2500 VRMS

STPS6045CW

Abstract: 6045CW
Contextual Info: STPS60xxCP/CPI STPS6045CW  POWER SCHOTTKY RECTIFIERS FEATURES AND BENEFITS A1 VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREME FAST SWITCHING HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE INSULATED PACKAGE: Insulating voltage = 2500VRMS

smd diode marking U10

Abstract: Diode marking TY smd diode marking B3 smd diode HB
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF30SC4M u^hàLÌ°- M 40V m Feature a <SMD • Tj=150°C 1Tj=150°C 1 P r r s m Rating 1 High lo Rating -Small-PKG • P rrsm DC/D C 4.7 Main Use it 1Switching Regulator 1DC/DC Converter 1Home Appliance, Game, Office Automation

Contextual Info: SILICON EPITAXIAL PLANAR DIODE 1N6642D2A / 1N6642D2B 1N6642D2C / 1N6642D2D • • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”B-MELF” Package. Suitable for general purpose, switching applications.

1N6642

Abstract: LE17 MIL-PRF19500 QR217 l2d diode
Contextual Info: SILICON EPITAXIAL PLANAR DIODE 1N6642DLCC2 • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available

1N4148DLCC2

Abstract: LE17 MIL-PRF19500 QR217
Contextual Info: SILICON EPITAXIAL PLANAR DIODE 1N4148DLCC2 • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available

Contextual Info: FFH30S60S 30 A, 600 V STEALTH II Diode Features Description • Stealth Recovery, trr = 40 ns @ IF = 30 A • Max. Forward Voltage, VF = 2.6 V (@ TC = 25°C) The FFH30S60S is STEALTH™ II diode with soft recovery characteristics using silicon nitride passivated ion-implanted

1N4620

Abstract: LE17 MIL-PRF19500 QR217 Low Noise Zener Diode CVP zener diode
Contextual Info: LOW NOISE ZENER DIODE 1N4620DLCC2 • • • • • • Low Leakage Low Current Low Noise Standard ±5% Zener Voltage Tolerance Hermetic Ceramic Surface Mount Package Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

SML05SC12D3

Abstract: LE17 MIL-PRF19500 QR217 schottky rectifier diode
Contextual Info: SILICON CARBIDE SCHOTTKY RECTIFIER DIODE SML05SC12D3 • • • • • • Hermetic Ceramic Surface Mount Package “D-5B” / “E-MELF” Compatible Footprint 1200V, 5A, Schottky Rectifier Zero Forward and Reverse Recovery High Frequency Operation Fast Temperature Independent Switching

1N4565

Abstract: 6.4v zener diode temperature compensated zener diode 8251 1N4565A 1N4566 1N4566A 1N4567 1N4567A 1N4568
Contextual Info: 6.4V TEMPERATURE COMPENSATED ZENER DIODE 1N4565 - 1N4584ADLCC2 • Hermetic Ceramic Surface Mount Package • 6.4V ±5% Reference Voltage • Stable over a wide temperature range • Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

BYV52-200

Abstract: BYV52PI-200 BYV5
Contextual Info: BYV52/PI HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION TOP3I : Insulating voltage = 2500 V DC

Contextual Info: VS-60CPU04-F3, VS-60CPU04-N3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 x 30 A FRED Pt FEATURES Base common cathode 2 • Low forward voltage drop • 175 °C operating junction temperature • Ultrafast recovery time • Low leakage current