DIODE MARKING ES CODE Search Results
DIODE MARKING ES CODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 5446/BEA | Rochester Electronics LLC | 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) |
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| 54LS190/BEA | Rochester Electronics LLC | 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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DIODE MARKING ES CODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
Atmel MARKING CODE
Abstract: atmel lot marking AT91SAM3S4C Analog devices marking Information AT91SAM3S4B ATSAM3S AT91SAM3S4A at91sam3s at91SAM3S1A Atmel 122
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Original |
1040a01-apr-10at91sam3s4cat91sam3s2c+12 | |
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Contextual Info: SFH690BT-3030 Vishay Semiconductors Optocoupler, Phototransistor Output, SOP-4, Mini-Flat Package Features • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals • UL1577, File No. E52744 System Code U • CSA 93751 • BSI IEC60950 IEC60065 |
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sfh690bt-30302002/95/ec2002/96/eci179065+5 | |
SAM3S4B
Abstract: sam3s4c ATSAM3S sam-ba ATMEL 129 11040B AT91SAM atmel lot marking SAM3S1B sam3s2c
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at91sam11040b09-feb-110x28a90560+11 | |
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Contextual Info: What HEW LETT 1"UM P A C K A R D High Performance Schottky Diode for Transient Suppression Technical Data HSMS-2700/-2702 -270B/-270C Features • Ultra-low S eries R esistance for Higher Current Handling Description Package Lead Code Identification Top View |
OCR Scan |
hsms-2700/-2702-270b/-270chsms-2700idehsms-2702-blk+6 | |
TRANSISTOR SMD MARKING CODE kdContextual Info: BSP 123 Infineon t echnologi es SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level •W = a8 -2 0V Type Vbs b f lDS on) Package Marking 0.38 A 6n SOT-223 BSP 123 BSP 123 100 V Type Ordering Code Tape and Reel Information |
OCR Scan |
ot-223q67000-s306e6327s35bq5+7 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA27077G Silicon epitaxial planar type For band switching • Package • Code SSSMini2-F3 • Pin Name 1: Anode 2: Cathode M Di ain sc te on na tin nc ue e/ d ■ Features |
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2002/95/ecma27077g | |
marking 2U diode t5
Abstract: diode hp 2800 hp 2800 diode diode hp 2835 schottky schottky diode marking A7 marking 2U diode C3 SOT23 HSMS2820 B7 SOT23 HSMS-2820
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OCR Scan |
hsms-28xxot-23/sot143ot-23ot-143+10 | |
RX-2C G
Abstract: marking code rie sot23 em 2860 k2915 MARKING JW SOT-23
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OCR Scan |
hsms-2850hsms-2860ot-23/ot-143+7 | |
MA27077GContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA27077G Silicon epitaxial planar type For band switching • Package ■ Features • Code SSSMini2-F3 • Pin Name 1: Anode 2: Cathode Th an W is k y Th e a pro ou Fo an po du fo |
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2002/95/ecma27077g | |
MA2S077GContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA2S077G Silicon epitaxial planar type For band switching • Package ■ Features • Code SSMini2-F4 • Pin Name 1: Anode 2: Cathode Th an W is k y Th e a pro ou Fo an po du fo |
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2002/95/ecma2s077g | |
smd transistor marking code XC
Abstract: XC SMD MARKING
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OCR Scan |
ot-23q67000-s322s35bq5q133777+7 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . MA3DJ92 Silicon epitaxial planar type For rectification Common cathode type • Package Forward current (Average) IF(AV) = 20 A rectification is possible High reverse voltage VR Code |
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2002/95/ecma3dj92o-220d-a1diod202 | |
smd transistor m7Contextual Info: BSP 317 Infineon •eh n o l o g I«s SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS(th = "0.8.-2.0 V V) sP Type BSP 317 -200 V Type BSP 317 Ordering Code Q67000-S94 -0.37 A ffDS(on) Package 6O SOT-223 Marking |
OCR Scan |
q67000-s94ot-223e6327s35bg5+7 | |
MAF100
Abstract: diode 682 diode marking code 682 BA 682 BA682 DIODE ba 683 BA diode BA683 A723 682 diode
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OCR Scan |
-ba683q62702-a145q62702-a723q62702-a121+11 | |
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Contextual Info: BAS35 BAS35 Surface mount Small Signal Dual Diodes Kleinsignal-Doppel-Dioden für die Oberflächenmontage Version 2005-02-01 0.4 Power dissipation Verlustleistung 1.1 2.9 ±0.1 2 .5 ± 0 .1 Type Code 1 .3 m ax 3 2 1 1.9 Dimensions - Maße [mm] 1 = K1 2 = K2 3 = A1/A2 |
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bas35ot-23o-236 | |
smd transistor A7 sot 23Contextual Info: BSP 89 Inf ineon technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type ^DS k> WDS(on) Package Marking BSP 89 240 V 0.36 A 6Q SOT-223 BSP 89 Type BSP 89 Ordering Code Q67000-S652 Tape and Reel Information |
OCR Scan |
ot-223q67000-s652e63270235bg5+7 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM76720 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Code WSMini6-F1 Pin Name |
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2002/95/ecmtm76720 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Code WSSMini6-F1 Pin Name |
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2002/95/ecmtm86727 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SJ0582 Silicon P-channel power MOSFET • Package • Avalanche energy capability guaranteed • High-speed switching • No secondary breakdown • Code U-G2 • Pin Name 1: Gate |
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2002/95/ec2sj0582 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te on na |
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2002/95/ec2sk3539g | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4ZD14 Silicon epitaxial planar type For high speed switching • Package ■ Features M Di ain sc te on na tin nc ue e/ d • Code SMini4-F1 • Pin Name • Two isolated elements are contained in one package, allowing |
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2002/95/ecma4zd14 | |
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Contextual Info: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 3 — 14 November 2014 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are |
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bf1118bf1118rbf1118wbf1118wr+2 | |
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Contextual Info: SIEMENS BSP 315 SIPM OS Small-Signal Transistor • P channel • Enhancement mode • Logic Level ' ^GS th = -0.8.-2.0 V Type ^DS BSP 315 -50 V Type BSP 315 BSP 315 Ordering Code Q67000-S75 Q67000-S249 -1.1 A flDS(on) Package Marking 0.8 n SOT-223 BSP 315 |
OCR Scan |
q67000-s75q67000-s249ot-223e6327+4 | |
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Contextual Info: Not Recommended for New Design A Product Line of Diodes Incorporated Use DMP10H400SK3 ZXMP10A17K 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C |
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dmp10h400sk3zxmp10a17kaec-q101-100v+2 | |