DIODE MARKING CODE YF 30 Search Results

diode marking code YF

Abstract: diode marking YF diode 30 YF marking code YF diode marking YF marking code 024 sod Diode yf rectifying a sine wave marking bp 30 yf
Contextual Info: SD0103WS SILICON SCHOTTKY BARRIER DIODE Features • Low forward voltage drop and suitable for high effifiency rectifying • Ultra small resin package is suitable for high density surface mounting and high speed assembly PINNING DESCRIPTION PIN 1 Cathode

diode marking code YF

Abstract: diode 30 YF diode marking YF marking code YF diode marking YF diode marking code YF 30
Contextual Info: SD0103WS SILICON SCHOTTKY BARRIER DIODE Features • Low forward voltage drop and suitable for high effifiency rectifying • Ultra small resin package is suitable for high density surface mounting and high speed assembly PINNING DESCRIPTION PIN 1 Cathode

TPC6107

Contextual Info: TPC6107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIV TPC6107 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • • Low drain-source ON resistance: R DS (ON) = 40 mΩ (typ.)

tpc8020

Abstract: TPC8020-H
Contextual Info: TPC8020-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High-Speed U-MOSIII TPC8020-H High-Speed and High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package

MAZD024

Abstract: MAZD027 MAZD030 MAZD033 MAZD051 MAZD056 MAZD062 zener diode marking ES code MAZD390
Contextual Info: Sheet No. 1/3 APPROVED DESIGNED » » « » / P r o d u c t Specification pp fi =S/Type Number MA Z D □ □ □ 1 2)3) *4 flSJ/Type "J jL-jr— ffliÉ/Appl icat ion SifliE • SWaii • liia/Structure i / ’J 3 « ■ » / O u t line S S S M i ■? —

TPCP8101

Contextual Info: TPCP8101 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U-MOS III TPCP8101 Notebook PC Applications Portable Equipment Applications Unit: mm 0.33±0.05 0.05 M A Small footprint due to small and thin package • • Low drain-source ON-resistance: R DS (ON) = 24 mΩ (typ.)

TPC8016-H

Contextual Info: TPC8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High speed U-MOS III TPC8016-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package

k3934

Abstract: 2SK3934 transistor k3934 2SK3934 equivalent 2SK3934(Q)
Contextual Info: 2SK3934 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3934 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: R DS (ON) = 0.23Ω (typ.) High forward transfer admittance: |Yfs| =8.2 S (typ.)

k3868

Abstract: 2SK3868 transistor Toshiba K3868
Contextual Info: 2SK3868 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type p -MOSVI 2SK3868 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: R DS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 A (V DS = 500 V)

BSP320

Contextual Info: SIEMENS BSP 320 S SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • W = 2-1 - 4 0 V Type Vos k) R DS on) Package BSP 320 S 60 V 2.9 A 0.12 Q SOT-223 Marking Ordering Code Q67000-S4001 Maximum Ratings Parameter Symbol

TPCS8213

Abstract: S8213
Contextual Info: TPCS8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ TPCS8213 Lithium Ion Battery Applications Unit: mm • Small footprint due to a small and thin package • • Low drain-source ON-resistance: R DS (ON) = 8.4 mΩ (typ.) High forward transfer admittance: |Yfs | = 13 S (typ.)

Diode SMA marking code ye

Abstract: smd diode marking sG 13 DO-214AC diode marking SD smd code marking YL
Contextual Info: Comchip SMD Transient Voltage Suppressor SMD Diode Specialist TV04A5V0-HF Thru. TV04A441-HF Working Peak Reverse Voltage: 5.0 to 440 Volts Power Dissipation: 400 Watts RoHS Device Halogen Free SMA/DO-214AC Features - Glass passivated chip. 0.179 4.55 0.162(4.10)

YG MARKING CODE

Abstract: BZX84C2V4 marking Z2 28 sot23 YG MARKING CODE SOT23 zener diode zg 36 diode marking code YF component marking Y1 sot23 MARKING CODE zh sot23
Contextual Info: BZX84C2V4 - BZX84C51 350mW SURFACE MOUNT ZENER DIODE Features Mechanical Data • • • • • • • • • Planar Die Construction 350mW Power Dissipation Zener Voltages from 2.4V - 51V Ideally Suited for Automated Assembly Processes Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2

International Semiconductor,Inc

Abstract: se b2 sae j1850 pwm 68HC05 68HC05V12 J1850 M68HC05 MC68HC05V12 The scheme of HF power amplifier FET Freescale Se 211se
Contextual Info: Freescale Semiconductor, Inc. DU LE SE MIC ON General Release Specification CSIC System Design Group Austin, Texas AR CH IVE DB YF RE ES CA R E Q U I R E D December 10, 1996 For More Information On This Product, Go to: www.freescale.com N O N - D I S C L O S U R E

Contextual Info: BZX84C2V4 - BZX84C51 350mW SURFACE MOUNT ZENER DIODE Features Mechanical Data • Planar Die Construction   350mW Power Dissipation   Zener Voltages from 2.4V - 51V Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0

Contextual Info: BZX84C2V4 - BZX84C51 350mW SURFACE MOUNT ZENER DIODE Features Mechanical Data • Planar Die Construction • • 350mW Power Dissipation • • Zener Voltages from 2.4V - 51V Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0

BR 8014

Abstract: TPCA8014-H diode marking code YF
Contextual Info: TPCA8014-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High speed U-MOSIII TENTATIVE TPCA8014-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications High speed switching Small gate charge: Qsw = 7.4 nC (typ.)

cn/A/U 237 BG

Contextual Info: 05405 SMAJ SERIES Only One Name Means ProTek’Tion 400 WATT TVS COMPONENT APPLICATIONS • Power Supply • AC/DC Applications • Telecom DO-214AC PACKAGE FEATURES MECHANICAL CHARACTERISTICS • • IEC 61000-4-2 ESD : Level 4 - Air 15kV, Contact 8kV

HALL EFFECT 21E

Abstract: thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG
Contextual Info: RF Transistors Data Book 1997 Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B Material

cn/A/U 237 BG

Contextual Info: 05405 SMAJ SERIES Only One Name Means ProTek’Tion 400 WATT TVS COMPONENT APPLICATIONS • Power Supply • AC/DC Applications • Telecom DO-214AC PACKAGE FEATURES MECHANICAL CHARACTERISTICS • UL File Recognition #E333727 • IEC 61000-4-2 ESD : Level 4 - Air 15kV, Contact 8kV

cn/A/U 237 BG

Contextual Info: 05405 SMAJ SERIES Only One Name Means ProTek’Tion 400 WATT TVS COMPONENT APPLICATIONS • Power Supply • AC/DC Applications • Telecom DO-214AC PACKAGE FEATURES MECHANICAL CHARACTERISTICS • UL File Recognition #E333727 • IEC 61000-4-2 ESD : Level 4 - Air 15kV, Contact 8kV

zener diode Marking code v3 sod-123

Abstract: BZT52B68-V-G BZT52-V-G
Contextual Info: BZT52-V-G-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon planar power zener diodes • These diodes are also available in other case styles and other configurations including: the SOT-23 case with type designation BZX84 series, the dual zener

Contextual Info: RZQ050P01 Pch -12V -5A Power MOSFET Datasheet lOutline VDSS -12V RDS on (Max.) 26mW ID -5A PD 1.25W lFeatures (6) (5) TSMT6 (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT6).

Contextual Info: RZQ050P01 Pch -12V -5A Power MOSFET Datasheet lOutline VDSS -12V RDS on (Max.) 26mW ID -5A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT6).