DIODE MARKING CODE MN Search Results
DIODE MARKING CODE MN Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 5446/BEA | Rochester Electronics LLC | 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) |
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| 54LS190/BEA | Rochester Electronics LLC | 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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DIODE MARKING CODE MN Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
D1980
Abstract: diode marking F5
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OCR Scan |
2sd1980f5sc-63d19802sd1980+1 | |
aajfContextual Info: ERA81-004 1a * ± 'J 'W.M'W-Y : Outline Drawings -f= t— K SCHOTTKY BARRIER DIODE : Features • ffiV r • Low Vp : Marking A 7 —n — K : ffl Color code : Silver Super high speed sw itchin g. High reliability by planer design. Voltage class : Applications |
OCR Scan |
era81-004aajf | |
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Contextual Info: P - P * # - f * - K Super F ast Recovery Diode Axial Diode OUTLINE DIMENSIONS S3L60 Case : 1 .4 f 25 =1 600V 2.2A § 25 ±2 7 -°" i a+0 2 ^ 4.4 -o.i i * •S B Œ L L D î 0 CD H o (D •trr 5 0 n s If ) ^ Color code (Blue) sk^ epbhbbh Marking ffl m S3L |
OCR Scan |
s3l600033ti | |
A83-006
Abstract: ERA83-006 T151 T460 T760 T930 marking code a83
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OCR Scan |
i-125l95t/r89shl50a83-006+6 | |
ERB44
Abstract: ERB44-08 T151 T930
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OCR Scan |
erb4430tf3i95t/r89erb44-08+2 | |
marking 2U 77 diode
Abstract: marking DIODE 2U 04 marking code IAM 12CT ERC84-009 diode marking code 7-7-7-7 marking 2U diode marking DIODE 2U
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OCR Scan |
erc84-009marking 2u 77 diodemarking diode 2u 04marking code iam+4 | |
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Contextual Info: S 'a y M u - / tU T K Schottky Barrier Diod« Axial Diode O U T L IN E D IM E N S IO N S Case : Axial D1NS4 40V 1A B= 2QMIN ' ¿2.6 o » 20MIN -M—° C athode band Marking S4 6N - - u - y h A ! » < f « ï D ate code Type No. U nit I mm • R A TIN G S Absolute Maximum Ratings |
OCR Scan |
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smd diode schottky code marking 5A
Abstract: SMD MARKING CODE M 4 Diode U01 SMD diode smd marking 5P smd DIODE code marking Q KIV* diode smd diode marking c3 diode SMD MARKING CODE JV DE5PC3 smd code marking js
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OCR Scan |
0336gtj-25tcsmd diode schottky code marking 5asmd marking code m 4 diode+8 | |
Scans-00828
Abstract: DE10PC3 SHINDENGEN DIODE 0336g
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OCR Scan |
de10pc30336gi-111j532-1+2 | |
MARKING 3D regulator
Abstract: shindengen regulator DIODE JSu DE10SC3L 3D smd marking DIODE marking VU SHINDENGEN DIODE smd diode marking sim
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OCR Scan |
de10sc3l0306gi-111j532-1+7 | |
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Contextual Info: 10-PZ12NMA027MR-M340F68Y targat datasheet 1200V/ 30mΩ flowMNPC 0-SIC Features flow0 12mm housing ● Rohm Silicon Carbide Power MOSFET ● Rohm™ Silicon Carbide Power Schottky Diode ● MNPC Topology with Splitted Output ● Ultra Low Inductance with Integrated DC-capacitors |
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10-pz12nma027mr-m340f68y | |
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Contextual Info: SM MN04L L20IS S Logic Le evel N-Ch Po ower MOSFE ET 200V LOGIC N-Chan nnel MOSFET Fe eatures • Drain-Sourrce breakdo own voltage e: BVDSS=200 0V Min. • Low gate charge: c Qg=4nC (Typ.) • Low drain-source On-Resistance: RDS(on)=1.35Ω (Max.) • 100% avala |
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mn04ll20issmn04lsmn04l2+3 | |
RJP 30 h1
Abstract: marking code YS SMD SMD XM M1FL20U MARKING CODE SMD IC smd marking HK M1FL20 diode SMD MARKING CODE JV SMD MARKING CODE l6n
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OCR Scan |
m1fl20u027jiityp20/xmi-111+9 | |
113t smd code
Abstract: SMD MARKING CODE 16t smd diode marking codes 3t 113T smd diode schottky code marking 1A d28 smd
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OCR Scan |
/i77u-ffiffrrglt113t smd codesmd marking code 16tsmd diode marking codes 3t+3 | |
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Contextual Info: 10-PZ06NBA041FS-P915L68Y preliminary datasheet flowBOOST0 600V/41mΩ Features flow0 12mm housing ● High efficiency symmetric boost ● Ultra fast switching with MOSFET and SiC diodes ● Low Inductance Layout ● Tandem to NPC and MNPC modules Target Applications |
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10-pz06nba041fs-p915l68y00v/41m | |
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Contextual Info: Passively Cooled Diode Laser Bar SPL MNxx Only available in North America SP-pack. left , DL-pack. (right) Features Applications • Uncollimated (MN-series) • 1 cm-laser bar mounted on passive heat sink, no water required • Highly reliable strained layer InGa(Al)As/GaAs |
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igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
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igbt welding machine schemeikw40n120h3aircon l1smd diode schottky code marking sj+6 | |
F600M
Abstract: S08230 l32 sot23 hp 3080 diode MARK, g5 sot23
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OCR Scan |
hsmp-38xxhsmp-48xxot-23hewps057p+7 | |
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Contextual Info: l i 5E D POUEREX INC • 72^41,31 0DÜ3bhB 7 " F -â ? -ü mNEREX ED_ Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 1S697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Dual SCft, SCR/Diode Isolated Modules |
OCR Scan |
1s697bp107amperes/100-2000ed430825 | |
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Contextual Info: WILLAS FM120-M+ LM1MA141WATHRU Common Anode Silicon FM1200-M+ LM1MA142WA 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Dual Switching DiodeSOD-123+ Pb Free Product PACKAGE Package outline Features • Batch process design, excellent power dissipation offers |
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fm120-mlm1ma141walm1ma142fm1200-mod-123+6 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use LM1MA141WAT1G LM1MA142WAT1G in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications. |
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lm1ma141wat1glm1ma142wat1gsc-70/sot-323ot-323/sc-70+3 | |
anode common fast recovery diode dual
Abstract: LM1MA142WAT1G Diode marking CODE 5M
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Original |
lm1ma141wat1glm1ma142wat1gsc-70/sot-323ot-323/sc-70+5 | |
LM1MA142WAT1GContextual Info: S-LM1MA142WAT3G LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications. |
Original |
s-lm1ma142wat3gaec-q101lm1ma141wat1gs-lm1ma141wat1g+3 | |
din 74
Abstract: GWOY6039 GWOY6040 Q62702-P3555 Q62702-P5312 K1222
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gwoy6039gwoy6040din 74q62702-p3555+2 | |