DIODE MARKING CODE LAYOUT G SOT23 Search Results

Contextual Info: Product specification DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS Features and Benefits • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V Low VGS(th), can be driven directly from a battery

Contextual Info: Product specification DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS 20V Features and Benefits RDS(on) ID Max (Note 5) 175mΩ @ VGS = 4.5V 1.40A @ TA = 25°C 240mΩ @ VGS = 2.5V 1.20A @ TA = 25°C 360mΩ @ VGS = 1.8V 1.0A @ TA = 25°C

DMN65D8L-7

Contextual Info: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

DMN65D8L-7

Abstract: dmn65d8l
Contextual Info: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

marking code INFINEON

Abstract: BBY53 M 21 marking code diode BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03LRH BBY53-03W BBY53-05W
Contextual Info: BBY53. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W

BSS127S

Abstract: K29 mosfet BSS127 K28 SOT23
Contextual Info: BSS127 Green N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C 600V 160Ω @ VGS = 10V SC59 SOT23 70mA • • • • • Low Input Capacitance High BVDss rating for power application Low Input/Output Leakage

marking code INFINEON

Abstract: sod323 diode marking code AC marking code diode 14 BAR63-02W BAR63-03W BBY51 BBY51-02L BBY51-02W BBY51-03W BCW66
Contextual Info: BBY51. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment BBY51 BBY51-02L BBY51-02W BBY51-03W ! ,  ,   Type BBY51 BBY51-02L BBY51-02W BBY51-03W Package

BAS70

Abstract: BAS70-02L BAS70-02W BAS70-04S marking 77s
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below BAS170W BAS70-02L

Contextual Info: BBY51. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment • Pb-free RoHS compliant package BBY51 BBY51-02L BBY51-02W BBY51-03W ! ,  ,   Type BBY51

BAS170W

Abstract: BAS70-02L BAS70-02W BAS70-04S MARKING 74s SOt323 marking code 6X MARKING 77s BAS70 Series BAS70 BAS70-04
Contextual Info: BAS70./BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below • Pb-free RoHS compliant package1)

BA595 E6327

Abstract: marking code TS
Contextual Info: BA595/BA885/BA895. Silicon PIN Diode • Current-controlled RF resistor for switching and attenuating applications • Frequency range 1 MHz . 2 GHz • Especially useful as antenna switch in TV-sat tuners • Very low harmonics BA595 BA895 BA885 3 1 2

824022

Contextual Info: Specification for release Customer : Ordercode: Description: Package: 824022 TVS Diode Array WE-TVS SOT23-3L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 Lines - bidirectional • Provide ESD Protection for each line to

BAS16

Abstract: BAS1602W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16-07L4 BAS16S BAS16U BAS16W
Contextual Info: BAS16. Silicon Switching Diode • For high-speed switching applications BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 4 D 2 3 D 3 D 1 2 1 2 Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U

BA595

Abstract: BA885 BA895 BAR63-02W BAR63-03W BCW66 SC79 SCD80
Contextual Info: BA595/BA885/BA895. Silicon PIN Diode • Current-controlled RF resistor for switching and attenuating applications • Frequency range 1 MHz . 2 GHz • Especially useful as antenna switch in TV-sat tuners • Very low harmonics BA595 BA895 BA885 !  

marking W26 sot23

Abstract: 824023 sot23 marking w26 SOT23 component marking code 5a tr array sot23
Contextual Info: Specification for release Customer : Ordercode: Description: Package: 82402304 TVS Diode Array WE-TVS SOT23-6L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 4 Lines - unidirectional • Provide ESD Protection for each line to

BAS16

Abstract: bas16 a6 BAS16-03W BAS1602W BAS16-02L BAS16-02V BAS16-02W BAS16-07L4 BAS16S BAS16U
Contextual Info: BAS16. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U $ !   Type BAS16 BAS16-02L* BAS16-02V BAS16-02W

BAS16

Contextual Info: BAS16. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U $ ! " # ,  BAS16-07L4 , " , ! ,    

BAW56

Contextual Info: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration • BAW56S / U: For orientation in reel see package information below • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAW56 BAW56T

BAV99

Abstract: bav99 infineon A7S marking code marking code A7s SOt323 marking code 6X marking A7s sot363 BAV99S BAV99T BAV99U BAV99W
Contextual Info: BAV99. Silicon Switching Diode • For high-speed switching applications • Series pair configuration • BAV99S / U: For orientation in reel see package information below BAV99 BAV99T BAV99W BAV99S BAV99U $ ! " # , ! ,  , " , ,   Type BAV99 BAV99S BAV99T

infineon schottky diode bat64

Abstract: marking code 14 diode BAT64 BAT64-02V BAT64-02W BAT64-04 BAT64-04T BAT64-04W BAT64-05 BAT64-05W
Contextual Info: BAT64. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage BAT64 BAT64-02V BAT64-02W BAT64-04 BAT64-04T BAT64-04W ! BAT64-05 BAT64-05W

C5440

Contextual Info: Specification for release Customer : Ordercode: Description: Package: 824021 TVS Diode Array WE-TVS SOT23-3L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 Lines - unidirectional • ESD Protection for 1 Line - bidirectional

Contextual Info: BA595/BA885/BA895. Silicon PIN Diode • Current-controlled RF resistor for switching and attenuating applications • Frequency range 1 MHz . 2 GHz • Especially useful as antenna switch in TV-sat tuners • Very low harmonics • Pb-free RoHS compliant package

tr array sot23

Contextual Info: Specification for release Customer : Ordercode: Description: Package: 82402305 TVS Diode Array WE-TVS SOT23-6L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 5 Lines - unidirectional • Provide ESD Protection for each line to

Contextual Info: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)