DIODE MARKING CODE F6 Search Results

diode marking f6

Contextual Info: Super Fast Recovery Diode Axial Diode Wtm D1NF60 OUTLINE U nit-m m W eight 0.19g Typ Package : AX057 600V 0.8A UJ Feature • H lff iF R D • H igh V o lta g e S u p e r FRD • ñ S 'f X • trr = 4 0 0 n s • L o w N oise 02.6 • trr= 4 0 0 n s -M -

FDS6694

Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
Contextual Info: FDS6694 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

CBVK741B019

Abstract: F011 F63TNR F852 FDS6690A FDS6984S FDS6986S FDS9953A L86Z
Contextual Info: FDS6986S Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6986S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages

CBVK741B019

Abstract: F011 F63TNR F852 FDS6961AZ FDS9953A L86Z
Contextual Info: FDS6961AZ Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

CBVK741B019

Abstract: F011 F63TNR F852 FDS4672A FDS9953A L86Z
Contextual Info: FDS4672A 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

CBVK741B019

Abstract: F011 F63TNR F852 FDS2570 FDS9953A L86Z
Contextual Info: FDS2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4A, 150 V.

CBVK741B019

Abstract: F011 F63TNR F852 FDS9400A FDS9953A L86Z
Contextual Info: FDS9400A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive

CBVK741B019

Abstract: F63TNR FDD6530A FDD6630A FDD6680
Contextual Info: FDD6530A 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

S1G15

Contextual Info: FDS9926A Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage

4025-C

Contextual Info: FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Contextual Info: FDP5690/FDB5690 60V N-Channel PowerTrenchTM MOSFET General Description Features • 32 A, 60 V. RDS ON = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters

GMF05LC-HS3

Contextual Info: GMF05LC-HS3 Vishay Semiconductors 5-Line ESD-Protection Diode Array in LLP75-6A Features • • • • • • • • Ultra compact LLP75-6A package 5-line ESD-protection Low leakage current IR < 0.1 µA Low load capacitance of typ. 43 pF at VR = 0 V ESD-immunity acc. IEC 61000-4-2

CBVK741B019

Abstract: F011 F63TNR F852 FDS6912 FDS9953A L86Z
Contextual Info: FDS6912 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

fds4935

Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z c2335 9842A
Contextual Info: FDS4935 Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive

FDS6982S

Abstract: CBVK741B019 F011 F63TNR F852 FDS6982 FDS9953A L86Z
Contextual Info: FDS6982S Dual Notebook Power Supply N-Channel PowerTrench SyncFet General Description Features The FDS6982S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages

FDN327N

Contextual Info: FDN327N N-Channel 1.8 Vgs Specified PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • 2 A, 20 V. RDS ON = 70 mΩ @ VGS = 4.5 V

Contextual Info: FDS6614A N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

6680 MOSFET

Abstract: FDD6672A
Contextual Info: FDD6672A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

FDC634P

Abstract: SSOT-6 CBVK741B019 F63TNR FDC633N
Contextual Info: FDC634P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –3.5 A, –20 V. RDS ON = 80 mΩ @ V GS = –4.5 V

CBVK741B019

Abstract: F63TNR FDD3690 FDD6680
Contextual Info: FDD3690 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 22 A, 100 V.

FDS4465

Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
Contextual Info: FDS4465 P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

CBVK741B019

Abstract: F011 F63TNR F852 FDS3590 FDS9953A L86Z
Contextual Info: FDS3590 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 6.5 A, 80 V

SSOT-6

Abstract: CBVK741B019 F63TNR FDC633N FDC638P
Contextual Info: FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

CBVK741B019

Abstract: F011 F63TNR F852 FDS7764A FDS9953A L86Z
Contextual Info: FDS7764A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for