DIODE MARKING CODE BF Search Results

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Contextual Info: SIEMENS BBY51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Ordering Code Pin Configuration BBY51 S3 Q62702-B631 1=A Package < Marking II CM Type

6050

Contextual Info: SIEMENS Silicon Switching Diode SMBD 6050 • For high-speed switching applications Type Marking Ordering Code tape and reel SMBD 6050 s5A Q68000-A8439 Pin Configuration Package1) SOT-23 < i^ i s o-o ^ ' EHA07002 Maximum Ratings Parameter

Contextual Info: SIEMENS Silicon PIN Diode BA 596 Preliminary Data • Current-controlled RF resistor for switching and attenuating applications. • Frequency range above 1 MHz • Designed for low IM distortion Type Marking Ordering Code tape and reel BA 596 white P Q62702-A954

DIODE marking code SJ

Abstract: ERC06 Diode RJ 4A PEI CF 30 FR A536
Contextual Info: E R C 6 i s a : Outline Drawings FAST RECOVERY DIODE Features •*^-T : Marking Most suitable for color T .V . damper. J> 7 — 3 — K : flf C o lo r code : Blue High voltage by mesa design. . <T3> High reliability Abridged type name $ 7 J* V o lta g e cla ss

TRANSISTOR MARKING FA

Abstract: EHA07307 CJE marking diode
Contextual Info: SIEGET
25 BFP405F NPN Silicon RF Transistor XYs Preliminary data
For low current applications
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz
Transition frequency f T = 25 GHz
Gold metallization for high reliability

Contextual Info: SIEGET
25 BFP420F NPN Silicon RF Transistor XYs Preliminary data
For high gain low noise amplifiers
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz
Transition frequency f T = 25 GHz
Gold metallization for high reliability

Contextual Info: BAV74LT1G Monolithic Dual Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ANODE 1 3 CATHODE MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current

BAV74LT1G

Abstract: BAV74LT3G
Contextual Info: BAV74LT1G Monolithic Dual Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ANODE 1 3 CATHODE MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current

Contextual Info: SIEGET
25 BFP450 NPN Silicon RF Transistor 3
For medium power amplifiers 4
Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2
Transition frequency f T = 24 GHz
Gold metallization for high reliability

BFP420 application notes

Abstract: Transistor BFP420 BFP420
Contextual Info: SIEGET
25 BFP420 NPN Silicon RF Transistor 3
For high gain low noise amplifiers 4
For oscillators up to 10 GHz
Noise figure F = 1.1 dB at 1.8 GHz outstanding G ms = 21 dB at 1.8 GHz 2
Transition frequency f T = 25 GHz
Gold metallization for high reliability

On semiconductor date Code BAV99LT1G

Abstract: BAV99lt1g BAV99LT1 BAV99LT3G
Contextual Info: BAV99LT1G Dual Series Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ANODE 1 MAXIMUM RATINGS Each Diode Rating Reverse Voltage Forward Current Symbol Value Unit VR 70 Vdc IF 215 mAdc

BAV99LT1G

Abstract: BAV99LT3G SOT23 DIODE marking CODE AV
Contextual Info: BAV99LT1G Dual Series Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ANODE 1 MAXIMUM RATINGS Each Diode Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 215 mAdc

BAV70LT1G

Abstract: BAV70LT3G
Contextual Info: BAV70LT1G Dual Switching Diode Common Cathode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge)

MMBD6100LT1G

Abstract: MMBD6100LT3G
Contextual Info: MMBD6100LT1G Monolithic Dual Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ANODE 1 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF

MMBD7000LT1G

Abstract: MMBD7000LT3G marking m5c
Contextual Info: MMBD7000LT1G Dual Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 1 ANODE 3 CATHODE/ANODE MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current

Contextual Info: MMBD6100LT1G Monolithic Dual Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ANODE 1 MAXIMUM RATINGS EACH DIODE 3 CATHODE Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current

Contextual Info: MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G Monolithic Dual Switching Diodes http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

SMMBD2835LT1G

Contextual Info: MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G Monolithic Dual Switching Diodes http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

to236

Abstract: MMBD2838LT1G TO236 footprint MMBD2837LT1 MMBD2837LT1G MMBD2838LT1 MA6 diode
Contextual Info: MMBD2837LT1G, MMBD2838LT1G Monolithic Dual Switching Diodes Features http://onsemi.com • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ANODE 1 3 CATHODE 2 ANODE MAXIMUM RATINGS EACH DIODE Rating Peak Reverse Voltage Symbol Value

MMBD2835LT1G

Abstract: MMBD2836LT1G
Contextual Info: MMBD2835LT1G, MMBD2836LT1G Monolithic Dual Switching Diodes Features http://onsemi.com • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage MMBD2835LT1G MMBD2836LT1G Forward Current