DIODE MARKING CODE 57 Search Results

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Contextual Info: SIEMENS Silicon Crossover Ring Quad Schottky Diode BAT 114-099R Features • High barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code

Contextual Info: SIEMENS BBY 52 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code Pin Configuration BBY 52 S5s Q62702-B632 1 = A1 Package 2 = A2

marking 513 SOD-323

Contextual Info: S IE M E N S BBY 51-03W Silicon Tuning Diode 1 1 1 High Q hyperabrupt tuning diode Designed for low tuning voltage operation For V C O 's in mobile communications equipment Type B B Y 51-03W Marking H Ordering Code tape and reel Pin Configuration Q62702-B663

C157

Abstract: transistor a918 Q62702-A918
Contextual Info: BAT 17-07 Silicon Schottky Diode ● ● For mixer applications in the VHF/UHF range For high-speed switching Type Ordering Code tape and reel Pin Configuration 1 2 3 4 Marking Package BAT 17-07 Q62702-A918 C1 57 SOT-143 C2 A2 A1 Maximum Ratings Parameter

diode a57 schottky

Contextual Info: SIEMENS Silicon Schottky Diode BAT 17-07 • For mixer applications in the VHF/UHF range • For high-speed switching Type BAT 17-07 Pin Configuration Ordering Code tape and reel 1 Q62702-A918 C1 2 C2 3 4 A2 A1 Marking Package 57 SOT-143 Maximum Ratings

smd dual diode code A7

Abstract: smd diode marking A7 SOT-23 smd marking a7 smd diode a7 smd code A7 A7 SMD sot23 Code sot-23 on semiconductor marking a7 smd dual diode code 68 CMBD226 A7 I SOT-23
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR DUAL SWITCHING DIODE 3 CMBD226 SOT-23 Formed SMD Package Pin Configuration 1 = ANODE 2 = CATHODE 3 = ANODE/ 2 1 CATHODE Marking Code A7

Contextual Info: 32E D • fl23L.32Q 0Qlb57b T H S I P Silicon Tuning Diode ~ T - 0 'i ^ ^ .SIEMENS/ SPCL-. SEMICONDS For Hyperband TV/VTR tuners. Bd I BB 620 _:_ Cathode B B620 Type Ordering code Q62702-B403 Marking red/S Maximum ratings Reverse voltage

smd dual diode code A7

Abstract: smd code A7 smd diode marking A7 SOT-23 smd marking a7 smd dual diode code 68 A7 SMD sot23 Code sot-23 on semiconductor pdf marking a7 SMD a7 Transistor smd diode marking 77 smd marking A7 SOT-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODE 3 CMBD226 SOT-23 Formed SMD Package Pin Configuration 1 = ANODE 2 = CATHODE 3 = ANODE/ 2 1 CATHODE Marking Code A7 Ultra High-Speed Dual Switching Diodes in Series

st Diode marking EE

Contextual Info: ERC81-004 2.6A Ifl-JUN'Sc : Outline Drawings SCHOTTKY BARRIER DIODE Features I^Tjv : Marking L ow V F * 7 - 3 - K rta S u p e r h ig h sp ee d s w itc h in g . Color code : S ilver • T V — t - S iB l-iS B ftS tt H ig h reliability by p la n e r d e s ig n .

XTR1N0850

Abstract: XTR1N0800 XTR1N0815-BD
Contextual Info: XTRM Series XTR1N0800 IE W HIGH-TEMPERATURE, 80V DIODE FAMILY DESCRIPTION ▲ Reverse voltage VR > 90V. ▲ Operational beyond the -60°C to +230°C temperature range. ▲ Forward current @ 230°C, VF=1.2V: o XTR1N0815: IF=165mA per diode. o XTR1N0850: IF=570mA per diode.

IRF3710SPBF

Abstract: TP1100 IRF3710LPBF IRF3710S
Contextual Info: PD - 95108 IRF3710SPbF IRF3710LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A

IRF3710SPBF

Abstract: AN-994 IRF3710 IRF3710L IRL3103L IRF3710LPBF IRF3710S
Contextual Info: PD - 95108 IRF3710SPbF IRF3710LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A

Contextual Info: PPJA3415 20V P-Channel Enhancement Mode MOSFET Voltage -20 V -4.0A Current SOT-23 Unit : inch mm Features  RDS(ON) , VGS@-4.5V, ID@-4.0A<57mΩ  RDS(ON) , VGS@-2.5V, ID@-2.8A<70mΩ  RDS(ON) , VGS@-1.8V, ID@-2.1A<95mΩ  Advanced Trench Process Technology

DMN3112S

Abstract: marking ANs J-STD-020D
Contextual Info: DMN3112S N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V

marking TAW

Abstract: 4 pin hall marking code 6 SEIKO Product Code SEIKO MARKING CODE unipolar transistor magnetic sensor seiko 100 s chip MP003-C-P-SD-1
Contextual Info: S-5713A Series HIGH-SPEED UNIPOLAR DETECTION TYPE HALL IC www.sii-ic.com Rev.3.0_00 Seiko Instruments Inc., 2009-2010 The S-5713A Series, developed by CMOS technology, is a unipolar detection type Hall IC with high-speed detection. The output voltage changes when the S-5713A Series detects the intensity level of flux density and a polarity. Using the

DIODE marking S6 57

Abstract: DIODE marking S4 57 smd diode code s1 96 GMM3x60-015X1 DIODE marking S6 96 smd diode .S6 22 smd diode S4 96 smd diode g6 Control of Starter-generator S4 DIODE
Contextual Info: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings

SMD mosfet MARKING code TC

Abstract: smd diode g6 SMD MARKING CODE s4 IF110 diode L2 smd smd diode code g3 smd diode code g6 smd diode marking code L2 Control of Starter-generator DIODE marking S6 57
Contextual Info: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings

IF110

Abstract: smd diode code g6 smd diode g6 3x60-015X2 Control of Starter-generator marking G3 S3 marking DIODE smd diode code g3 smd diode code g4 smd L2 diode
Contextual Info: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings

smd diode g6

Abstract: marking G3 IF110 GMM3x60-015X1
Contextual Info: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings

Contextual Info: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings

IRF3710L

Abstract: AN-994 IRF3710 IRF3710S IRF530S
Contextual Info: PD - 94201 IRF3710S IRF3710L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A S Description

Contextual Info: S-5725 Series HIGH-SPEED BIPOLAR HALL EFFECT LATCH www.sii-ic.com Rev.2.1_00 Seiko Instruments Inc., 2011-2012 The S-5725 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates with a high-sensitivity, a highspeed detection and low current consumption.