DIODE MARKING CODE 57 Search Results

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Contextual Info: 32E D • fl23L.32Q 0Qlb57b T H S I P Silicon Tuning Diode ~ T - 0 'i ^ ^ .SIEMENS/ SPCL-. SEMICONDS For Hyperband TV/VTR tuners. Bd I BB 620 _:_ Cathode B B620 Type Ordering code Q62702-B403 Marking red/S Maximum ratings Reverse voltage

smd dual diode code A7

Abstract: smd code A7 smd diode marking A7 SOT-23 smd marking a7 smd dual diode code 68 A7 SMD sot23 Code sot-23 on semiconductor pdf marking a7 SMD a7 Transistor smd diode marking 77 smd marking A7 SOT-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODE 3 CMBD226 SOT-23 Formed SMD Package Pin Configuration 1 = ANODE 2 = CATHODE 3 = ANODE/ 2 1 CATHODE Marking Code A7 Ultra High-Speed Dual Switching Diodes in Series

st Diode marking EE

Contextual Info: ERC81-004 2.6A Ifl-JUN'Sc : Outline Drawings SCHOTTKY BARRIER DIODE Features I^Tjv : Marking L ow V F * 7 - 3 - K rta S u p e r h ig h sp ee d s w itc h in g . Color code : S ilver • T V — t - S iB l-iS B ftS tt H ig h reliability by p la n e r d e s ig n .

IRF3710SPBF

Abstract: IRF3710 IRF3710L AN-994 IRL3103L IRF3710LPBF IRF3710S
Contextual Info: PD - 95108 IRF3710SPbF IRF3710LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A

Contextual Info: PPJA3415 20V P-Channel Enhancement Mode MOSFET Voltage -20 V -4.0A Current SOT-23 Unit : inch mm Features  RDS(ON) , VGS@-4.5V, ID@-4.0A<57mΩ  RDS(ON) , VGS@-2.5V, ID@-2.8A<70mΩ  RDS(ON) , VGS@-1.8V, ID@-2.1A<95mΩ  Advanced Trench Process Technology

DIODE marking S6 57

Abstract: DIODE marking S4 57 smd diode code s1 96 GMM3x60-015X1 DIODE marking S6 96 smd diode .S6 22 smd diode S4 96 smd diode g6 Control of Starter-generator S4 DIODE
Contextual Info: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings

smd diode g6

Abstract: marking G3 IF110 GMM3x60-015X1
Contextual Info: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings

IRF3710L

Abstract: AN-994 IRF3710 IRF3710S IRF530S
Contextual Info: PD - 94201 IRF3710S IRF3710L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A S Description

Contextual Info: Product specification DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

Contextual Info: S-5724 Series www.sii-ic.com LOW VOLTAGE OPERATION HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.2_00 Seiko Instruments Inc., 2012-2013 The S-5724 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates at a low voltage with a highsensitivity, a high-speed detection and low current consumption.

unipolar transistor magnetic sensor

Abstract: 5713ANSL S-5713ANSL-M3T1S
Contextual Info: Rev.2.0_00 HIGH-SPEED UNIPOLAR DETECTION TYPE HALL IC S-5713A Series The S-5713A Series, developed by CMOS technology, is a unipolar detection type Hall IC with high-speed detection. The output voltage changes when the S-5713A Series detects the intensity level of flux density and a polarity. Using the

Diode marking CODE 1M

Abstract: Marking Code "1m" diode
Contextual Info: SIEMENS BBY 57-03W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • High capacitance ratio • Designed for low tuning voltage operation for VCO’s in mobile communications equipment

Contextual Info: BBY 57-05W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • High capacitance ratio • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • For control elements such as TCXOs and VCXOs

Contextual Info: S-5725 Series HIGH-SPEED BIPOLAR HALL EFFECT LATCH www.sii-ic.com Rev.2.4_00 Seiko Instruments Inc., 2011-2013 The S-5725 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates with a high-sensitivity, a highspeed detection and low current consumption.

S5723

Abstract: hall sensor 40 L
Contextual Info: Rev.2.0_00 HIGH-SPEED BIPOLAR DETECTION TYPE HALL IC S-5723A Series The S-5723A Series, developed by CMOS technology, is a bipolar detection type Hall IC with a high-sensitivity and high-speed detection. The output voltage changes when the S-5723A Series detects

AN-1005

Abstract: IRFL014 marking 31A marking CODE 001 pd 223 marking code TR
Contextual Info: PD - 95312A IRFL024ZPbF HEXFET Power MOSFET Features l l l l l l D Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 55V RDS on = 57.5mΩ G ID = 5.1A

AN-1005

Abstract: IRFL014
Contextual Info: PD - 95250 AUTOMOTIVE MOSFET IRFL024ZPbF HEXFET Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 57.5mΩ G ID = 5.1A

Contextual Info: S-57A1 A Series www.sii-ic.com FOR AUTOMOTIVE 125°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED UNIPOLAR DETECTION TYPE HALL IC Rev.1.1_00 Seiko Instruments Inc., 2013 The S-57A1 A Series, developed by CMOS technology, is a high-accuracy Hall IC that operates with high temperature and

s5717

Contextual Info: S-5717 Series www.sii-ic.com LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.1.0_00 Seiko Instruments Inc., 2013 The S-5717 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates at a low voltage and low current consumption.

TSM2306

Abstract: TSM2306CX IDA57 n-channel mosfet transistor n-channel mosfet SOT-23
Contextual Info: TSM2306 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 57 @ VGS =10V 3.5 94 @ VGS =4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

S-5711ANDL-I4T1G

Abstract: MP003-C-P-SD-1
Contextual Info: Rev.2.7_00 BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC S-5711A Series The S-5711A Series, developed by CMOS technology, is a Hall IC with a high-sensitivity and operates on a low current. The output voltage changes when the S-5711A Series detects the intensity

Contextual Info: S-57K1 A Series www.sii-ic.com FOR AUTOMOTIVE 125°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.2_00 Seiko Instruments Inc., 2013 The S-57K1 A Series, developed by CMOS technology, is a high-accuracy Hall IC that operates with high temperature and

Contextual Info: Rev.2.1_00 BIPOLAR DETECTION TYPE HALL IC WITH POWER-DOWN FUNCTION S-5721A/5722A Series The S-5721A/5722A Series, developed using CMOS technology, is a bipolar detection type Hall IC with a high-sensitivity that operates on a low current. The output voltage changes when the S-5721A/5722A Series detects the