DIODE MARKING CODE 4N Search Results

b83006

Abstract: diode schottky b83006 B83-006 diode b83
Contextual Info: E R B83-006 2A : Outline Drawings I SCHOTTKY BARRIER DIODE : Features • vP IS/jv : Marking Low VF Ä 7 - 3 - K : Sit Color code : Super high speed switching. High reliability by planer design Abridged type name 3LŒ? 7 * • E IS I : Applications Voltage ciass

Contextual Info: BAV222 / BAW222 Silicon Switching Diode • For high-speed switching applications trr < 4ns • Very low diode capacitance (CT < 1.5pF) • Small SMD package SC75 (JEDEC: SOT416) BAV222 BAW222 ! ,  ! ,  ,  ,  Type Package Configuration Marking BAV222

SCD-80

Abstract: SCD80 DIODE smd marking A4 BAW222 BAV222 BCR108T SC75 SC79
Contextual Info: BAV222/BAW222 Silicon Switching Diode • For high-speed switching applications trr < 4ns • Very low diode capacitance (CT < 1.5pF) • Small SMD package SC75 (JEDEC: SOT416) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BAV222

smd code A1s

Abstract: DIODE smd marking A4s smd code A4s DIODE smd marking A1s marking a4s SMD A1S DIODE smd marking Ag smd a4s BAW22
Contextual Info: BAV222 / BAW222 Silicon Switching Diode • For high-speed switching applications trr < 4ns • Very low diode capacitance (CT < 1.5pF) • Small SMD package SC75 (JEDEC: SOT416) BAV222 BAW222 ! ,  ! ,  ,  ,  Type BAV222* BAW222* Package SC75 SC75 Configuration

SMN01L20

Contextual Info: SMN01L20Q Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • 0.85A, 200V, RDS on =1.35Ω @ VGS=10V  Low gate charge: Qg=4nC (Typ.)  Fast switching  100% avalanche tested  RoHS compliant device D G Ordering Information Part Number

IS085

Contextual Info: SMN01L20Q Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • 0.85A, 200V, RDS on =1.35Ω @ VGS=10V  Low gate charge: Qg=4nC (Typ.)  Fast switching  100% avalanche tested  RoHS compliant device D G Ordering Information D S Part Number

04l20

Contextual Info: SMN04L20IS Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • Drain-Source breakdown voltage: BVDSS=200V Min.  Low gate charge: Qg=4nC (Typ.)  Low drain-source On-Resistance: RDS(on)=1.35Ω (Max.)  100% avalanche tested  RoHS compliant device

Contextual Info: STK0170 Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • High voltage: BVDSS=700V Min.  Low gate charge: Qg=4nC (Typ.)  Low drain-source On resistance: RDS(on)=12.5  Low Crss: Crss=2.5pF (Typ.)  RoHS compliant device (Max.)

BAW56

Contextual Info: BAW56 HIGH-SPEED DOUBLE DIODE High-speed switching in thick and thin-film circuits Features • Small plastic SMD package. • High switching speed:max.4ns. • Continuous reverse voltage:max.75V • Repetitive peak reverse voltage:max.85V • Repetitive peak forward current:max.450mA.

Contextual Info: SMN04L20D Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • Drain-Source breakdown voltage: BVDSS=200V Min.  Low gate charge: Qg=4nC (Typ.)  Low drain-source On-Resistance: RDS(on)=1.35Ω (Max.)  100% avalanche tested  RoHS compliant device

Contextual Info: SMN04L20D Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • Drain-Source breakdown voltage: BVDSS=200V Min.  Low gate charge: Qg=4nC (Typ.)  Low drain-source On-Resistance: RDS(on)=1.35Ω (Max.)  100% avalanche tested  RoHS compliant device

SEMTECH MARKING

Abstract: smd diode code WH Semtech Electronics
Contextual Info: BAS216WT High-speed switching diode PINNING PIN Features • • • • • Small ceramic SMD package High switching speed: max. 4ns Continuous reverse voltage: max. 75V Repetitive peak reverse voltage: max. 85V Repetitive peak forward current: max. 500mA

SMD MARKING CODE WG

Abstract: BAS216WS smd DIODE code marking Q Forward Holdings SMD MARKING CODE jtp
Contextual Info: BAS216WS High-speed switching diode PINNING PIN Features • • • • • Small ceramic SMD package High switching speed: max. 4ns Continuous reverse voltage: max. 75V Repetitive peak reverse voltage: max. 85V Repetitive peak forward current: max. 500mA

SMD MARKING CODE WG

Abstract: diode wg diode wg smd BAS216WS smd DIODE code marking Q SMD MARKING CODE jtp SMD diode MARKING CODE 10 on 724
Contextual Info: BAS216WS High-speed switching diode PINNING PIN Features • • • • • Small ceramic SMD package High switching speed: max. 4ns Continuous reverse voltage: max. 75V Repetitive peak reverse voltage: max. 85V Repetitive peak forward current: max. 500mA

smd diode code BL

Abstract: BAS516 SWITCHING DIODE BL SMD marking code T1s code BL SMD bl marking MARKING 4 SOD523 BL 15 SMD BL SMD MARKING
Contextual Info: BL Galaxy Electrical Production specification High Speed Switching Diode FEATURES BAS516 Pb z Ultra small plastic SMD package. z High switching speed: max.4ns. z Continuous reverse voltage: max.75V. z Repetitive peak reverse voltage: max.85V z Repetitive peak forward current: max.500mA

diode SMD MARKING CODE A6

Abstract: smd diode a6 smd diode marking a6 DIODE A6 SMD diode code a6 DIODE SMD A6 sod-323 Marking a6 100v 500ma diode smd diode sod-323 marking code k SOD323 Package footprint
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode BAS316 FEATURES Pb z Very small plastic SMD package. z High switching speed:max.4ns z Continuous reverse voltage:max.100v z Repetitive peak reverse voltage:max.100v z Repetitive peak forward current:max.500mA

BAV16W

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode BAV16W FEATURES Pb z Fast Switching Speed:trr=4ns Typ z Surface Mount Package Ideally Suited For Lead-free Automatic Insertion z For General Purpose Switching Applications z High Conductance

BAV16WS

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode BAV16WS FEATURES Pb z Fast Switching Speed:trr=4ns Typ z Surface Mount Package Ideally Suited For Lead-free Automatic Insertion z For General Purpose Switching Applications z High Conductance

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode 1N4148W FEATURES Pb z Fast Switching Speed:trr=4ns Typ z Surface Mount Package Ideally Suited For Lead-free Automatic Insertion z For General Purpose Switching Applications z High Conductance

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode 1N4148WS FEATURES Pb z Fast Switching Speed:trr=4ns Typ z Surface Mount Package Ideally Suited For Lead-free Automatic Insertion z For General Purpose Switching Applications z High Conductance

1N4148WS

Abstract: T4 SOD-323 marking code PB surface mount diode
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode 1N4148WS FEATURES Pb z Fast Switching Speed:trr=4ns Typ z Surface Mount Package Ideally Suited For Lead-free Automatic Insertion z For General Purpose Switching Applications z High Conductance

T4 SOD-123

Abstract: DIODE T4 marking bl galaxy MARKING CODE diode sod123 t4 SOD-123 marking code T4 diode marking T4 sod123 DIODE T4 marking sod123 1N4148W 1N4148W-T4 1N4148W T4 diode sod-123 marking code t4
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode 1N4148W FEATURES Pb z Fast Switching Speed:trr=4ns Typ z Surface Mount Package Ideally Suited For Lead-free Automatic Insertion z For General Purpose Switching Applications z High Conductance

Contextual Info: BAL99 Green SURFACE MOUNT SWITCHING DIODE Features Mechanical Data • • • • • • • • • Fast Switching Speed: Maximum of 4ns Low Forward Voltage: Maximum of 0.715V at 1mA Low Capacitance: Maximum of 2pF Surface Mount Package Ideally Suited for Automated Insertion

Contextual Info: BAL99 Green SURFACE MOUNT SWITCHING DIODE Features Mechanical Data • • • • • • • • • Fast Switching Speed: Maximum of 4ns Low Forward Voltage: Maximum of 0.715V at 1mA Low Capacitance: Maximum of 2pF Surface Mount Package Ideally Suited for Automated Insertion