DIODE MARKING CJSS Search Results

Contextual Info: International ^Rectifier P D - 9.1234 IRFPC60LC H EXFET Power M O S F E T • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced CjSS, Coss, Cres Isolated Central Mounting Hole Dynamic dv/dt Rated

Contextual Info: i P D - 9.1233 International jag Rectifier IR F P C 5 0 L C HEXFET Power MOSFET • • • Ultra Low G ate C harge Reduced G ate Drive Requirem ent Enhanced 3 0 V V gs Rating • • • • Reduced CjSS, C 0ss> Isolated Central Mounting Hole Dynam ic dv/dt Rated

IRF360LC

Contextual Info: International PD' 9-,23° lo g Rectifier_ IR FP 360LC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Cjssi C qss>Crss Isolated Central Mounting Hole Dynamic dv/dt Rated

Contextual Info: International ggjRectifier P D - 9.1232 IRFP460LC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced CjSS, Coss, CrgS Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated

sot143 code marking MS

Abstract: BAW100 DIODE marking CJSS SOT143 DUAL DIODE sot143 Marking code MS
Contextual Info: BAW100 DUAL, ISOLATED HIGH SPEED SWITCHING DIODE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 is a Dual Isolated High Speed Switching Diode in a SOT-143 surface mount package, designed for high speed switching applications.

FDG315N

Abstract: SC70-6
Contextual Info: =M l C O N D U C T O R PRELIMINARY tm FDG315N N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize

314P

Contextual Info: S E M IC O N D U C TO R PRELIMINARY tm FDG314P Digital FET, P-Channel General Description Features This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This

FDG314P

Abstract: SC70-6
Contextual Info: =M l C O N D U C T O R PRELIMINARY tm FDG314P Digital FET, P-Channel General Description Features This P -C h an n el e nh ancem en t mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DM OS technology. This

7130-1 transistor

Abstract: TRANSISTOR mosfet SD 1074 marking code LG Si1301 RU4 diode SM035X
Contextual Info: SM035X_ Vishay Siliconix New Product Complementary N- and P-Channel 20-V D-S MOSFET TrenchFET PRODUCT SUMMARY M O SFETs V d s (V ) N-Channel P-Channel 20 -20 FEATURES rDS(on) ( ß ) lD (m A ) 5 @ VGs = 4.5 V 200

FDG311N

Abstract: SC70-6
Contextual Info: S E M IC O N D U C TO R tm FDG311N N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel M O SFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state

1B marking transistor

Abstract: st ld 33 FDD603AL transistor themal
Contextual Info: E M IC O N D U C T O R tm FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T his N-Channel logic level enhancem ent m ode power fie ld e ffe c t tra n s is to r is produced using F a irc h ild ’s proprietary, high cell density, DM OS technology. This

sot143 code marking MS

Abstract: CJSS SOT-143 baw100 sot143 Marking code MS
Contextual Info: Central BAW100 TM Semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 is a Dual, Isolated High Speed Silicon Switching Diode in a SOT-143 surface mount package, designed for high speed switching applications.

fdg316P

Abstract: SC70-6
Contextual Info: S E M IC O N D U C TO R tm FDG316P P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level M OSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize

00QC

Contextual Info: Central BAW100 semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEM ICONDUCTOR BAW100 is a Dual, Isolated High Speed Silicon Switching Diode in a SOT-143 surface mount package, designed for high speed switching applications.

st smd diode marking code

Abstract: smd diode marking code jl an smd diode marking code SM
Contextual Info: i I I > I • PD-9.1008 International I s l Rectifier IRF720S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements

FDD5690

Contextual Info: =M l C O N D U C T O R tm FDD5690 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

N mosfet 250v 600A

Contextual Info: PD - 9.1658A International IO R Rectifier IR F R /U 9214 PRELIMINARY HEXFET Power MOSFET • • • • • • P-Channel Surface Mount IRFR9214 Straight Lead (IRFU9214) Advanced Process Technology Fast Switching Fully Avalanche Rated Voss = -250V R d s (o ii )

1RFZ34

Abstract: SMD IRFZ34 AN-994 IRFZ34 IRFZ34S SMD-220
Contextual Info: International ^¡Rectifier PD-9.509B IRFZ34 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V d s s ~ 60V ^DS(on = 0 - 0 5 0 0 ID = 30A Description DATA

smd diode WW1

Abstract: smd diode marking ww1 ww1 smd 1rfz46 smd ww1 14 SMD ww1 smd ww1 99 IRFZ46 AN-994 IRFZ46S
Contextual Info: PD-9.827 International Rectifier IRFZ46 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^d ss - 50 V ^DS on = 0 - 0 2 4 0 lD = 50* A Description DATA

FT-107

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT107T1 Medium Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 250 mA, 200 VOLTS R D S o n = 1 4 0HM MAX This TMOS medium power field effect transistor is designed for

ft107

Abstract: ft107 sot-223
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Pow er Field E ffect Transistor MMFT107T1 Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 250 mA, 200 VOLTS RDS on = 14 OHM MAX This TMOS medium power field effect transistor is designed for

IRFP340

Contextual Info: International S Rectifier PD-9.456C IRFP340 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss - 400V ^DS on = 0.55Q

025Q

Contextual Info: PD - 9.1257C International IQ R Rectifier IRLML2402 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1 mm Available in Tape and Reel Fast Switching V dss =

irfp054

Abstract: diode ior 0014 CD 1517
Contextual Info: International S Rectifier PD-9.544A IRFP054 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 6 0 V ^DS on = 0 .0 1 4 Q