DIODE MARKING C2 Search Results

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

A1030 transistor

Abstract: Q62702-A1030 marking code a4s
Contextual Info: BAV 70W Silicon Switching Diode Array • For high speed switching applications • Common cathode Type Marking Ordering Code Pin Configuration BAV 70W A4s 1 = A1 Q62702-A1030 2 = A2 Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage

Contextual Info: SIEMENS BAS 28W Silicon Switching Diode Array For high-speed switching applications Electrical insulated diodes Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 =C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings Symbol Diode reverse voltage

BAW56 application note

Abstract: A1s sot23 BAW56 V6010 ta1504 A2 SOT23
Contextual Info: BAW56 Silicon Switching Diode Array 3
For high-speed switching applications
Common anode 2 1 VPS05161 3 1 2 EHA07006 Type Marking BAW56 A1s Pin Configuration 1 = C1 2 = C2 Package 3=A1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR

BAV99

Abstract: free pdf transistor a7s bav99 marking diode bav A2 SOT23
Contextual Info: BAV99 Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAV99 A7s Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage

BAT62

Abstract: VPS05178
Contextual Info: BAT62 Silicon Schottky Diode 3
Low barrier diode for detectors up to GHz frequencies 4 2 1 VPS05178 1 4 2 3 EHA07020 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT62 62s Pin Configuration 1 = A1 2 = C2 3 = A2

diode c02

Abstract: diode c23 MBK441 All smd diode marking bb202 smd marking code C23 SOD523 marking c2
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB202 Low-voltage variable capacitance diode Product specification 2002 Feb 18 Philips Semiconductors Product specification Low-voltage variable capacitance diode FEATURES BB202 MARKING • Very steep C/V curve TYPE NUMBER

A1 SOT143

Abstract: VPS05178 BAW101 EHA07008
Contextual Info: BAW101 Silicon Switching Diode Array 3
Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage

450KW

Contextual Info: BAT 63 Silicon Schottky Diode ● Low barrier diode for mixer and detectors up to GHz frequencies Type BAT 63 Ordering Code tape and reel 1 Q62702-A1004 A1 Pin Configuration 2 3 4 C2 A2 C1 Marking Package 63 SOT-143 Maximum Ratings Parameter Symbol Values

b631 transistor

Abstract: S3 marking DIODE b631 Q62702-B631
Contextual Info: BBY 51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code Pin Configuration BBY 51 S3 1=A Q62702-B631 Package 2=A 3 = C1/C2 SOT-23

BBY53-05W

Abstract: VSO05561
Contextual Info: BBY53-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY53-05W

BAT62-07W

Abstract: VPS05605
Contextual Info: BAT62-07W Silicon Schottky Diode 3
Low barrier diode for detectors up to GHz 4 frequencies 2 1 VPS05605 4 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT62-07W 62s Pin Configuration 1=C1 2=C2 3=A2

bat 62 diode

Contextual Info: BAT 62-07W Silicon Schottky Diode 3 • Low barrier diode for detectors up to GHz 4 frequencies 2 1 VPS05605 4 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT 62-07W 62s Pin Configuration 1=C1 2=C2

6A1 diode

Abstract: marking code 76s 7006S 6A1 MARKING
Contextual Info: SIEMENS BAS 70-06S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching • Circuit protection 6 • Voltage clamping • High-level detecting and mixing 3 • Available with CECC quality assessment A1/A2 2 C2 1 . R FI Type Marking

VPS05178

Abstract: bat 62 diode
Contextual Info: BAT 62 Silicon Schottky Diode 3 • Low barrier diode for detectors up to GHz frequencies 4 2 1 VPS05178 1 4 2 3 EHA07020 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT 62 62s Pin Configuration 1 = A1 2 = C2 3 = A2

BAV99T

Abstract: SC75
Contextual Info: BAV99T Silicon Switching Diode 3 • For high-speed switching applications • Connected in series 2 C1/A2 3 1 1 2 A1 C2 VPS05996 EHA07181 Type Marking BAV99T A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SC75 Maximum Ratings Parameter Symbol Diode reverse voltage

SOT JPs

Abstract: VPS05178 EHA07008
Contextual Info: BAW 101 Silicon Switching Diode Array 3 • Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW 101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT-143 Maximum Ratings Parameter Symbol Diode reverse voltage

VSO05561

Contextual Info: BBY 52-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 52-05W S2s Pin Configuration 1=A1 2=A2

bav99w A7S

Abstract: BAV99W VSO05561
Contextual Info: BAV99W Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage

Marking a1s

Abstract: BAW56W VSO05561
Contextual Info: BAW56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type BAW56W Marking A1s 1 = C1 Pin Configuration 2 = C2 3 = A1/A2 Package SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage

BAV70W

Abstract: VSO05561 10TSV
Contextual Info: BAV70W Silicon Switching Diode Array 3
For high-speed switching applications
Common cathode 2 C1/C2 3 1 1 2 A1 A2 VSO05561 EHA07179 Type Marking BAV70W A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage

SC75

Abstract: BAV70T
Contextual Info: BAV70T Silicon Switching Diode Array 3
For high-speed switching applications
Common cathode 2 C1/C2 3 1 1 2 A1 A2 VPS05996 EHA07179 Type Marking BAV70T A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SC75 Maximum Ratings Parameter Symbol Diode reverse voltage

BAW156

Contextual Info: BAW156 3 Silicon Low Leakage Diode Array
Low-leakage applications
Medium speed switching times 2
Common anode 1 VPS05161 3 1 2 EHA07006 Type BAW156 Marking JZs Pin Configuration 1 = C1 2 = C2 3 = A1/2 Package SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage

VSO05561

Contextual Info: BBY 53-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 53-05W