DIODE MARKING A2 Search Results
DIODE MARKING A2 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ12V |
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Zener Diode, 12 V, USC | Datasheet | ||
MUZ5V6 |
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Zener Diode, 5.6 V, USM | Datasheet | ||
CEZ6V8 |
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Zener Diode, 6.8 V, ESC | Datasheet |
DIODE MARKING A2 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
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1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p | |
philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
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1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m | |
philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
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1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE | |
marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
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1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23 | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAS21/A/C/SLT1 SOT—23 SWITCHING DIODE FEATURES BAS21LT1 Marking: JS BAS21ALT1 Marking: JS2 Reverse breakdown voltage Reverse voltage Forward Diode leakage current voltage |
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OT-23 BAS21/A/C/SLT1 BAS21LT1 BAS21ALT1 BAS21CLT1 037TPY 950TPY 550REF 022REF | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes CMPSH-3/3A/3C/3S SOT—23 SCHOTTKY DIODE FEATURES CMPSH-3 Marking: D95 CMPSH-3A Marking: DB1 Reverse breakdown voltage Reverse voltage Forward Diode leakage current voltage |
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OT-23 037TPY 950TPY 550REF 022REF | |
1N4148WT
Abstract: 1N4448WT marking codes fairchild 1N914BWT 914BWT FAIRCHILD DIODE Fairchild marking change diode Fairchild Diode Marking Change
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1N4148WT 1N4448WT 1N914BWT 1N4148WT 1N4448WT OD523F OD-523F marking codes fairchild 1N914BWT 914BWT FAIRCHILD DIODE Fairchild marking change diode Fairchild Diode Marking Change | |
1N4148WSContextual Info: Diode Silicon Epitaxial Switching Diode Feature: • Fast Switching Diode. Marking 1N4148WS= A2 with cathode band. Absolute Maximum Ratings Description Symbol Value Continuous Reverse Voltage VR 75 VRRM 100 *IF AV 150 Surge Forward Current t <1s and Tj = 25°C |
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1N4148WS= 1N4148WS | |
BAS16W
Abstract: MMBD4148W
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OT-323 MMBD4148W/BAS16W OT-323 150mA MMBD4148W /BAS16W BAS16W | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS40 SERIES SOT—23 SCHOTTKY DIODE FEATURES BAS40 Marking:43 BAS40-04 Marking:44 ELECTRICAL CHARACTERISTICS(Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage |
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OT-23 BAS40 BAS40-04 BAS40-05 BAS40-06 037TPY 950TPY 550REF | |
Q62702-A1031
Abstract: marking code AC sot 323 diode
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Q62702-A1031 OT-323 Nov-28-1996 Q62702-A1031 marking code AC sot 323 diode | |
A1030 transistor
Abstract: Q62702-A1030 marking code a4s
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Q62702-A1030 OT-323 Nov-28-1996 A1030 transistor Q62702-A1030 marking code a4s | |
Contextual Info: MMBD4148W/BAS16W Switching Diode SOT-323 Features Fast Switching Speed For General Purpose Switching Applications High Conductance Marking: Dimensions in inches and millimeters A2 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ |
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MMBD4148W/BAS16W OT-323 150mA | |
1N4148WSContextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON EPITAXIAL SWITCHING DIODE 1N4148WS SOD-323 PLASTIC PCAKAGE Marking 1N4148WS= A2 Fast Switching Diode ABSOLUTE MAXIMUM RATINGS DESCRIPTION Continuous Reverse Voltage Repetitive Peak Reverse Voltage |
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ISO/TS16949 1N4148WS OD-323 1N4148WS= C-120 1N4148WSRev140604E 1N4148WS | |
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Q62702-A1051
Abstract: A7S marking code A1051 Q62702A1051
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Q62702-A1051 OT-323 Apr-03-1997 Q62702-A1051 A7S marking code A1051 Q62702A1051 | |
Contextual Info: BAS16W-WS PB FREE PRODUCT SURFACE MOUNT FAST SWITCHING DIODE SOT-323 FEATURES z Fast Switching Speed z For General Purpose Switching Applications High Conductance z Marking: A2 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter |
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BAS16W-WS OT-323 150mA MMBD4148W /BAS16W | |
LBAL99WT1GContextual Info: LESHAN RADIO COMPANY, LTD. LBAL99WT1G Switching Diode • We declare that the material of product 3 compliance with RoHS requirements. 1 2 DEVICE MARKING ORDERING INFORMATION . Device Marking LBAL99WT1G JF 3000 Tape & Reel JF 10000 Tape & Reel LBAL99WT1G SC-70 |
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LBAL99WT1G SC-70 LBAL99WT1G | |
Contextual Info: BAR 65-07 Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-Diode • Band switch for TV-tuners • Series diode for mobile communications transmit-receive switch • Unconnected pair Type Marking Ordering Code Pin Configuration |
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OT-143 Q62702- Apr-30-1996 100MHz | |
chip Marking 3A3
Abstract: Diode BGX50A BGX50A VPS05178
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BGX50A VPS05178 EHA00007 OT143 EHB00147 EHB00148 Jul-31-2001 EHB00149 chip Marking 3A3 Diode BGX50A BGX50A VPS05178 | |
Contextual Info: SIEMENS Silicon RF Switching Diode BAT 18 . • Low-loss VHF/UHF switch above 10 MHz • Pin diode with low forward resistance Type Marking Ordering Code Pin Configuration Package1 BAT 18 A2 Q62702-A787 SOT 23 °- ^ ^ 1-ÍHA07002 BAT 18-04 |
OCR Scan |
Q62702-A787 HA07002 Q62702-A938 EHA0700S Q62702-A940 Q62702-A942 EKA07004 EHA070M 235b05 G12034Ã | |
Contextual Info: SIEMENS BAS 28W Silicon Switching Diode Array For high-speed switching applications Electrical insulated diodes Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 =C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings Symbol Diode reverse voltage |
OCR Scan |
Q62702-A3466 OT-343 EHN00019 100ns, | |
diode a4s
Abstract: marking code fs 1 sot 323 A4s diode
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OCR Scan |
Q62702-A1030 OT-323 40mmm diode a4s marking code fs 1 sot 323 A4s diode | |
049-6
Abstract: diode MARKING A1
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OCR Scan |
OT-143 100MHz 049-6 diode MARKING A1 | |
Contextual Info: SIEMENS BBY 52 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code Pin Configuration BBY 52 S5s Q62702-B632 1 = A1 Package 2 = A2 |
OCR Scan |
Q62702-B632 OT-23 H35bDS 02BSbOS BBY52 aE35b05 |