DIODE MARKING A2 Search Results

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAS21/A/C/SLT1 SOT—23 SWITCHING DIODE FEATURES BAS21LT1 Marking: JS BAS21ALT1 Marking: JS2 Reverse breakdown voltage Reverse voltage Forward Diode leakage current voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes CMPSH-3/3A/3C/3S SOT—23 SCHOTTKY DIODE FEATURES CMPSH-3 Marking: D95 CMPSH-3A Marking: DB1 Reverse breakdown voltage Reverse voltage Forward Diode leakage current voltage

BAS16W

Abstract: MMBD4148W
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE MMBD4148W/BAS16W SWITCHING DIODE SOT-323 FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance Marking: A2 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS40 SERIES SOT—23 SCHOTTKY DIODE FEATURES BAS40 Marking:43 BAS40-04 Marking:44 ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage

A1030 transistor

Abstract: Q62702-A1030 marking code a4s
Contextual Info: BAV 70W Silicon Switching Diode Array • For high speed switching applications • Common cathode Type Marking Ordering Code Pin Configuration BAV 70W A4s 1 = A1 Q62702-A1030 2 = A2 Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage

LBAL99WT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. LBAL99WT1G Switching Diode • We declare that the material of product 3 compliance with RoHS requirements. 1 2 DEVICE MARKING ORDERING INFORMATION . Device Marking LBAL99WT1G JF 3000 Tape & Reel JF 10000 Tape & Reel LBAL99WT1G SC-70

Contextual Info: SIEMENS BAS 28W Silicon Switching Diode Array For high-speed switching applications Electrical insulated diodes Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 =C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings Symbol Diode reverse voltage

049-6

Abstract: diode MARKING A1
Contextual Info: SIEMENS BAR 65-07 Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-Diode • Band switch for TV-tuners • Series diode for mobile communications transmit-receive switch • Unconnected pair Type Marking Ordering Code BAR 65-07

BAW56 application note

Abstract: A1s sot23 BAW56 V6010 ta1504 A2 SOT23
Contextual Info: BAW56 Silicon Switching Diode Array 3
For high-speed switching applications
Common anode 2 1 VPS05161 3 1 2 EHA07006 Type Marking BAW56 A1s Pin Configuration 1 = C1 2 = C2 Package 3=A1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR

BAV70

Contextual Info: BAV70 Silicon Switching Diode Array 3
For high-speed switching applications
Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV70 A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage

BAV99

Abstract: free pdf transistor a7s bav99 marking diode bav A2 SOT23
Contextual Info: BAV99 Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAV99 A7s Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage

DIODE S4 Schottky SOD-323

Abstract: DIODE marking S4 sod diode SOD-323 S4 DIODE schottky SD103CWS SD103AWS SD103BWS diode s6 28 diode x sod 323
Contextual Info: SOD-323 Plastic-Encapsulate Diode SD103AWS-SD103CWS SCHOTTKY DIODE SOD-323 Features • · 1.00 Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance 1.70 1.30 Marking: SD103AWS:S4

BAT62

Abstract: VPS05178
Contextual Info: BAT62 Silicon Schottky Diode 3
Low barrier diode for detectors up to GHz frequencies 4 2 1 VPS05178 1 4 2 3 EHA07020 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT62 62s Pin Configuration 1 = A1 2 = C2 3 = A2

S3 DIODE schottky

Abstract: S3 marking DIODE SD101AWS SD101BWS SD101CWS
Contextual Info: SOD-323 Plastic-Encapsulate Diode SD101AWS-SD101CWS SCHOTTKY DIODE SOD-323 Features • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time 1.00 · · Marking: SD101AWS:S1 SD101BWS:S2 SD101CWS:S3 Maximum Ratings

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode BAV19W-BAV21W SWITCHING DIODE SOD-123 Features Marking: 1.05 • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications

A1 SOT143

Abstract: VPS05178 BAW101 EHA07008
Contextual Info: BAW101 Silicon Switching Diode Array 3
Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage

s3s sot23

Abstract: BBY51
Contextual Info: BBY51 Silicon Tuning Diode 3
High Q hyperabrupt dual tuning diode
Designed for low tuning voltage operation
For VCO's in mobile communications equipment 2 1 Type Marking BBY51 S3s Pin Configuration 1 = A1 2 = A2 VPS05161 Package 3 = C1/2 SOT23 Maximum Ratings

BBY 52

Contextual Info: BBY 52 Silicon Tuning Diode 3 • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment 2 1 Type Marking BBY 52 S5s Pin Configuration 1 = A1 2 = A2 VPS05161 Package 3 = C1/2 SOT-23

450KW

Contextual Info: BAT 63 Silicon Schottky Diode ● Low barrier diode for mixer and detectors up to GHz frequencies Type BAT 63 Ordering Code tape and reel 1 Q62702-A1004 A1 Pin Configuration 2 3 4 C2 A2 C1 Marking Package 63 SOT-143 Maximum Ratings Parameter Symbol Values

BBY53

Contextual Info: BBY53 3 Silicon Tuning Diode
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation 2 for VCOs in mobile communications equipment
High ratio at low reverse voltage Type BBY53 Marking S7s 1 Pin Configuration 1 = A1 2 = A2 3 = C1/2

BBY53-05W

Abstract: VSO05561
Contextual Info: BBY53-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY53-05W

BAT62-07W

Abstract: VPS05605
Contextual Info: BAT62-07W Silicon Schottky Diode 3
Low barrier diode for detectors up to GHz 4 frequencies 2 1 VPS05605 4 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT62-07W 62s Pin Configuration 1=C1 2=C2 3=A2

VPS05161

Abstract: diode marking 53 53 diode
Contextual Info: BBY 53 Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage 2 1 Type Marking BBY 53 S7s Pin Configuration 1 = A1 2 = A2 VPS05161