DIODE MARKING 88 Search Results

Contextual Info: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.

V23234-A1001-X036

Abstract: V23234-A0004-X053 V2323 V23234-A1001-X033 V23234-A1004-X050 V23234-B1001-X004 V23234-C1001-X005 V23234-A0001-X038 5 pin relay 12vdc with NO NC V23234-A0001-X040
Contextual Info: Automotive Relays Plug-in Mini ISO Relays Power Relay B n Pin assignment similar to ISO 7588 part 1 Plug-in terminals n Customized versions on request – 24VDC versions with contact gap >0.8mm – Integrated components e.g. resistor, diode – Customized marking/color

V23134

Abstract: V23134-J1052-D642 V23134 tyco V23134-J1052-X281 tyco V23134-j1052-d642 V23134-J1053-X282 V23134-J0056-X408 HB 2 24vdc relay max8786 ISO 7588
Contextual Info: Automotive Relays Plug-in Maxi ISO Relays Power Relay F7 Q Q Pin assignment similar to ISO 7588 part 1 Customized versions on request - 24VDC versions with contact gap >0.8mm - Integrated components e.g. resistor, diode - Customized marking/color - Special covers (e.g. notches, release features, brackets)

6 pin relay 12vdc with NO NC

Abstract: 5 pin relay 12vdc 5 pin relay 12vdc with NO NC V23234-A1001-X036 V23234-C1001-X005 relay 12vdc with diode V2323 V23234-A0001-X032 V23234-A0004-X051 5 pin relay 12vdc no nc
Contextual Info: Automotive Relays Plug-in Mini ISO Relays Power Relay B Q Q Q Pin assignment similar to ISO 7588 part 1 Plug-in terminals Customized versions on request – 24VDC versions with contact gap >0.8mm – Integrated components e.g. resistor, diode – Customized marking/color

VISHAY diode MARKING ED

Abstract: VISHAY MARKING ED diode k77 K77 diode
Contextual Info: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case

marking K2 diode

Abstract: MARKING 5D DIODE schottky diode marking A7
Contextual Info: DIODE wffife SOT-23/TO-236AB ‘TM PD ’ GENERAL-PURPOSE a n d LOW-LEAKAGE D IO D ES ELECTRICAL CHARACTERISTICS a t T . = 25°C vF Description *rr Max. Max. nA (ns) <PF) 1 ,2 ,3 10 25 4.0 6.0 ANCK VBR Min. Max. Marking (mA) (V) (V) @IF (mA) 1.0 Device Type

Contextual Info: VUM 33-06PH Power MOSFET Stage for Boost Converters Single Phase Rectiier Boost Diode VRRM = 1600 V VRRM Module for Power Factor Correction MOSFET = 600 V VDSS 60 A ID25 = 600 V = A IDAV = 106 A IF25 IFSM = 300 A VF 30A = 2.24 V RDS(on) = 120 m = 50 Part name (Marking on product)

diode marking 4L

Abstract: "MARKING CODE N" marking code N ultra low drop, high current diode CFSH MW 882l CFSH2-4L
Contextual Info: Central CFSH2-4L SURFACE MOUNT SILICON SCHOTTKY DIODE Top View Bottom View SOD-882L CASE APPLICATIONS: DC / DC Converters Voltage Clamping Protection Circuits Battery powered devices including Cell Phones, Digital Cameras, Pagers, PDAs, Laptop Computers, etc.

diode 3L

Abstract: diode marking code 3l
Contextual Info: CFSH2-3L SURFACE MOUNT SILICON SCHOTTKY DIODE SOD-882L CASE APPLICATIONS: w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CFSH2-3L is a high quality Schottky Diode designed for applications where ultra small size and operational efficiency are

IXA60IF1200

Contextual Info: IXA60IF1200NA I C25 = = VCES VCE sat typ = XPT IGBT Copack 88 A 1200 V 1.8 V C (3) Part number (G) 2 E (1+4) Features / Advantages: Applications: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through)

Contextual Info: FDPF035N06B N-Channel PowerTrench MOSFET 60 V, 88 A, 3.5 mΩ Features Description • RDS on = 2.91 mΩ ( Typ.) @ VGS = 10 V, ID = 88 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

marking FJs

Abstract: BSS88
Contextual Info: SIEMENS BSS 88 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type BSS 88 ^DS 240 V Type BSS 88 BSS 88 BSS 88 Ordering Code Q62702-S287 Q62702-S303 Q62702-S576 h 0.25 A ffDS(on) 8& Package Marking

E6327

Abstract: Q67000-S070
Contextual Info: BSP 88 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.6.1.2V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 88 240 V 0.32 A 8Ω SOT-223 BSP 88 Type BSP 88 Ordering Code Q67000-S070

L15ESD12VE2

Abstract: L15ESD
Contextual Info: LITE-ON SEMICONDUCTOR ESD PROTECTION DIODE L15ESDxVE2 STAND-OFF VOLTAGE - 12~24 Volts POWER DISSIPATION - 150 WATTS GENERAL DESCRIPTION SOD-882 The L15ESDxVE2 is designed to protect sensitive semiconductor components from damage or upset due to Electro Static Discharge

Contextual Info: LITE-ON SEMICONDUCTOR ESD PROTECTION DIODE L15ESDxVE2 STAND-OFF VOLTAGE - 12~24 Volts POWER DISSIPATION - 150 WATTS GENERAL DESCRIPTION SOD-882 The L15ESDxVE2 is designed to protect sensitive semiconductor components from damage or upset due to Electro Static Discharge

N SOD882

Contextual Info: LITE-ON SEMICONDUCTOR ESD PROTECTION DIODE L15ESDxVE2 STAND-OFF VOLTAGE - 12~24 Volts POWER DISSIPATION - 150 WATTS GENERAL DESCRIPTION SOD-882 The L15ESDxVE2 is designed to protect sensitive semiconductor components from damage or upset due to Electro Static Discharge

L13ESD5V0CE2

Abstract: A1BD
Contextual Info: LITE-ON SEMICONDUCTOR L13ESD5V0CE2 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 130 WATTS BIDIRECTIONAL ESD PROTECTION DIODE GENERAL DESCRIPTION SOD-882 The L13ESD5V0CE2 is designed to protect sensitive electronics from damage or latch up due to ESD , lightning, and other voltage

Contextual Info: LITE-ON SEMICONDUCTOR L13ESD5V0CE2 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 130 WATTS BIDIRECTIONAL ESD PROTECTION DIODE GENERAL DESCRIPTION SOD-882 The L13ESD5V0CE2 is designed to protect sensitive electronics from damage or latch up due to ESD , lightning, and other voltage

APM2103SG

Abstract: STD-020C p channel mosfet
Contextual Info: APM2103SG Dual P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-2.5A RDS ON = 88mΩ(typ.) @ VGS= -4.5V RDS(ON)= 120mΩ (typ.) @ VGS= -2.5V RDS(ON)= 160mΩ (typ.) @ VGS= -1.8V • • Super High Dense Cell Design Reliable and Rugged P Channel MOSFET

15KV

Contextual Info: LITE-ON SEMICONDUCTOR ESD PROTECTION DIODE L15ESD12VE2 STAND-OFF VOLTAGE - 12 Volts POWER DISSIPATION - 150 WATTS GENERAL DESCRIPTION SOD-882 The L15ESD12VE2 is designed to protect sensitive semiconductor components from damage or upset due to Electro Static Discharge

Contextual Info: LITE-ON SEMICONDUCTOR L15ESD12VE2 STAND-OFF VOLTAGE - 12 Volts POWER DISSIPATION - 150 WATTS ESD PROTECTION DIODE GENERAL DESCRIPTION SOD-882 The L15ESD12VE2 is designed to protect sensitive semiconductor components from damage or upset due to Electro Static Discharge

L13ESD5V0CE2

Abstract: 15KV N SOD882
Contextual Info: LITE-ON SEMICONDUCTOR L13ESD5V0CE2 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 130 WATTS BIDIRECTIONAL ESD PROTECTION DIODE GENERAL DESCRIPTION SOD-882 The L13ESD5V0CE2 is designed to protect sensitive electronics from damage or latch up due to ESD , lightning, and other voltage

N SOD882

Contextual Info: LITE-ON SEMICONDUCTOR ESD PROTECTION DIODE L15ESD12VE2 STAND-OFF VOLTAGE - 12 Volts POWER DISSIPATION - 150 WATTS GENERAL DESCRIPTION SOD-882 The L15ESD12VE2 is designed to protect sensitive semiconductor components from damage or upset due to Electro Static Discharge

L03ESDL5V0CE2

Contextual Info: LITE-ON SEMICONDUCTOR L03ESDL5V0CE2 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 30 WATTS BIDIRECTIONAL ESD PROTECTION DIODE GENERAL DESCRIPTION SOD-882 The L03ESDL5V0CE2 is designed to protect sensitive electronics from damage or latch up due to ESD, lightning, and other voltage