DIODE MARKING 7N DO Search Results

jtp 7n

Contextual Info: N AMER PHILIPS/DISCRETE b 'lE bbS3T31 003bi4fl5 fl33 BY527 D IAPX CONTROLLED AVALANCHE RECTIFIER DIODE Double-diffused glass passivated rectifier diode in hermetically sealed axial-leaded glass envelope capable o f absorbing reverse transients, intended fo r rectifier applications in colour television circuits

diode AY 101

Contextual Info: IPA60R385CP CoolMOS Power Transistor Product Summary Features V =L฀฀1[%^Ri V฀ DL:HI฀;><JG: D; B:G>I฀/ HG฀M฀.@ /.) R =L"`_#%^Ri@T [฀Y V฀2AIG6฀ADL฀<6I:฀8=6G<: O )',1.  Q X%eja *0 _< V฀"MIG:B:฀9K 9I฀G6I:9 V฀%><=฀E:6@฀8JGG:CI฀86E67>A>IN

Contextual Info: IPA60R165CP CoolMOS Power Transistor Product Summary Features V !0฀฀1[%^Ri V฀ DL:HI฀;><JG: D; B:G>I฀/ HGiJX /.) R =L"`_#%^Ri@T [฀Y V฀2AIG6฀ADL฀<6I:฀8=6G<: O )'*/.  Q X%eja ,2 _< V฀"MIG:B:฀9K 9I฀G6I:9 V฀%><=฀E:6@฀8JGG:CI฀86E67>A>IN

Contextual Info: IPI50R399CP CoolMOSTM Power Transistor Product Summary Features V฀ DL:HI฀;><JG:฀D;฀B:G>I฀/,+฀M฀.X V฀2AIG6฀ADL฀<6I:฀8=6G<: V !0฀8M[^Ri ./) O R =L"`_#%^Ri )',22  *0 _< Q X%eja V฀"MIG:B:฀9K 9I฀G6I:9 V฀%><=฀E:6@฀8JGG:CI฀86E67>A>IN

D9 DG transistor

Abstract: marking code 6C8 6dj8 transistor DJ marking transistor marking 6c9 IPA60R385CP diode marking 7n 6b102
Contextual Info: IPA60R385CP CoolMOS Power Transistor Product Summary Features V =L  V DL: HI;><JG: D; B : G>I/ HG M . @ 1 [%^Ri /.) R =L"`_#%^Ri@T [   Y V 2 AIG6 ADL <6I: 8 =6G<: O )',1. " *0 Q X%eja _< V " MIG: B : 9K 9IG6I: 9 V % ><= E: 6@8 JGG: CI8 6E67>A >IN V . J6A

6dj8

Abstract: D9 DG transistor marking code 6C8 6b102 IPA60R165CP DIODE marking D9 MARKING GC INFINEON
Contextual Info: IPA60R165CP CoolMOS Power Transistor Product Summary Features V !0  V DL: HI;><JG: D; B : G>I/ HGiJX 1 [%^Ri /.) R =L"`_#%^Ri@T [   Y V 2 AIG6 ADL <6I: 8 =6G<: O )'*/. " ,2 Q X%eja _< V " MIG: B : 9K 9IG6I: 9 V % ><= E: 6@8 JGG: CI8 6E67>A >IN V . J6A

JG Diode

Abstract: diode EZD jg transistor T1027 f7 transistor MARKING 7C DIODE marking 7b PG-TO252-3 transistor 7g
Contextual Info: NjbW IPD50R520CP CoolMOSTM Power Transistor Product Summary Package V *EL;HI<?=JG; E<C ;G?I0 IH M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * /,* " +- `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9

Contextual Info: NjbW IPD50R520CP CoolMOSTM Power Transistor Product Summary Package V *EL;HI<?=JG; E<C ;G?I0 IH M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * /,* " +- `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9

DFJI

Abstract: JG marking diode EZD transistor 7g
Contextual Info: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features V *EL;HI<?=JG; E<C ;G?I0 - , M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * -33 " +1 `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9

Contextual Info: 7 TH IS DRAWING IS U N P U B LIS H E D . IT U COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 2 3 - LOC AA A LL RIGHTS RESERVED. MECHANICAL: D IS T R E V IS IO N S 22 P D ESC R IPTIO N G G1 A DATE DWN 12SEPT05 REV PER ECO—0 5 —0 0 6 5 7 3

Contextual Info: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features V *EL;HI<?=JG; E<C ;G?I0 - , M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * -33 " +1 `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9

Contextual Info: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A†

MA2Z392

Abstract: MA392
Contextual Info: Variable Capacitance Diodes MA2Z392 MA392 N type GaAs epitaxial planar type Unit : mm INDICATES CATHODE 0.4 ± 0.15 1.7 ± 0.1 • Absolute Maximum Ratings Ta = 25°C 2.5 ± 0.2 Unit VR 10 V Forward current (DC) IF 40 mA Junction temperature Tj 125 °C Storage temperature

MA2Z392

Abstract: MA392
Contextual Info: Variable Capacitance Diodes MA2Z392 MA392 N type GaAs epitaxial planar type Unit : mm For VCO of a communications equipment 0.30+0.10 –0.05 2 (0.4) 5° 1.7±0.10 • Small series resistance rD and high Q value • Large capacitance ratio during low-voltage operation

Contextual Info: Variable Capacitance Diodes MA2Z392 MA392 N type GaAs epitaxial planar type Unit : mm For VCO of a communications equipment 0.30+0.10 –0.05 2 (0.4) 5° M Di ain sc te on na tin nc ue e/ d 1.7±0.10 • Small series resistance rD and high Q value • Large capacitance ratio during low-voltage operation

Contextual Info: T O S H IB A 2SK2846 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2 S K2 846 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm 8.0 ± 0.2 APPLICATIONS

Contextual Info: r n COPYRIGHT BY TRP CONNECTOR ALL RIGHTS RESERVED. E MECHANICAL: 23 A P R 2 D 1 3 LOGO CHANGE JC KZ M A T ERIA LS; 1 -HOUSING - TH ERM O PLASTIC PET PO L Y E S T E R FLA M M A B ILIT Y RATING UL 9 4V -0 . -SH IE L D - .010" THICK, C26BOO B R A S S P R E P LA T E D WITH BO^ilNCH MIN SEM I-BRIG H T NICKEL.

Contextual Info: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A†

Contextual Info: r n 1 THIS DRAWN} S UNPUBUSHEO. RELEASED FOR PUBLICATION 01ST J-a ll m h i s « s « v«>. M BY TICO ELECTROMCS CORPORATION. R E V IS IO N S 22 c MECHANICAL: QL TX 0 3 JU L 2 0 0 8 R EV P E R EC O —0 8 —0 1 7 7 2 5 NOTES /l\ MATERIALS HOUSING - THERMOPLASTIC PET POLYESTER FLAMMABILITY RATING UL 9AV-0

6790

Abstract: MOSFET 50V 100A IRFPS3810PBF
Contextual Info: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A†

Contextual Info: r n THIS bfwmnb g UNftJ6L&HE6T~ RELEASED FM PU6U6ATIM— COPYWOHT - _ BY TYCO WST ~ ALL RIGHTS RESERVED. M MECHANICAL: 22 B X I— .100 .035 TYP 2 -O a o _> o 3 Ol .625 - p .6+5 1 \ o A RJA5 JACK CAVITY CONFORMS TO FCC RULES AND REGULATIONS PART 68, SUB

MC 931 transistor

Abstract: S7N03
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S h ee t M M S F7N 03H D Medium Power Surface Mount Products M o to ro la P re fe rre d D e v ic e TMOS Single N-Channel Field Effect Transistors M iniM O S'" devices are an advanced series of power MOSFETs

130TX10

Abstract: V22ZA3 varistor 15k V33ZA5 z1 V22ZA3 V100ZA15 V120ZA4 V661DB40 S-750 V150LTX10A
Contextual Info: Varistor Products High Reliability Varistors High Reliability Varistors MIL QPL Description Littelfuse high reliability varistors offer the latest in increased product performance, and are available for applications requiring quality and reliability assurance

D9 DG transistor

Abstract: D9 DG d9dg transistor marking 6c9 D9 DG transistor marking
Contextual Info: IPI50R399CP CoolMOSTM Power Transistor Product Summary Features V DL: HI;><JG: D;B : G>I/ , + M . X V 2 AIG6 ADL <6I: 8 =6G<: V !0 8M[^Ri ./) O R =L"`_#%^Ri )',22 " *0 _< Q X%eja V " MIG: B : 9K 9IG6I: 9 V % ><= E: 6@8 JGG: CI8 6E67>A >IN V - 7 ;G: : A : 69 EA