DIODE MARKING 7N DO Search Results

jtp 7n

Contextual Info: N AMER PHILIPS/DISCRETE b 'lE bbS3T31 003bi4fl5 fl33 BY527 D IAPX CONTROLLED AVALANCHE RECTIFIER DIODE Double-diffused glass passivated rectifier diode in hermetically sealed axial-leaded glass envelope capable o f absorbing reverse transients, intended fo r rectifier applications in colour television circuits

MA2Z392

Abstract: MA392
Contextual Info: Variable Capacitance Diodes MA2Z392 MA392 N type GaAs epitaxial planar type Unit : mm For VCO of a communications equipment 0.30+0.10 –0.05 2 (0.4) 5° 1.7±0.10 • Small series resistance rD and high Q value • Large capacitance ratio during low-voltage operation

Contextual Info: DATA SH EET MOS FIELD EFFECT TRANSISTOR / ¿ P A 1 9 1 1 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The jtiPAI 911 PACKAGE DRAWING Unit : mm is a switching device which can be driven

Contextual Info: Variable Capacitance Diodes MA2Z392 MA392 N type GaAs epitaxial planar type Unit : mm For VCO of a communications equipment 0.30+0.10 –0.05 2 (0.4) 5° M Di ain sc te on na tin nc ue e/ d 1.7±0.10 • Small series resistance rD and high Q value • Large capacitance ratio during low-voltage operation

Contextual Info: T O S H IB A 2SK2846 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2 S K2 846 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm 8.0 ± 0.2 APPLICATIONS

Contextual Info: r n COPYRIGHT BY TRP CONNECTOR ALL RIGHTS RESERVED. E MECHANICAL: 23 A P R 2 D 1 3 LOGO CHANGE JC KZ M A T ERIA LS; 1 -HOUSING - TH ERM O PLASTIC PET PO L Y E S T E R FLA M M A B ILIT Y RATING UL 9 4V -0 . -SH IE L D - .010" THICK, C26BOO B R A S S P R E P LA T E D WITH BO^ilNCH MIN SEM I-BRIG H T NICKEL.

6790

Abstract: MOSFET 50V 100A IRFPS3810PBF
Contextual Info: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A†

F7N02Z

Abstract: D7N02
Contextual Info: MOTOROLA Order this document by MMDF7N02Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F 7N 02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel w ith Monolithic Zener ESD Protected Gate DUAL TMOS POWER MOSFET 7.0 AMPERES

S7N03

Contextual Info: MOTOROLA Order this document by MMSF7N03HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M M S F 7N 03H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs

D7N02

Contextual Info: MOTOROLA O rder this docum ent by M M DF7N02Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F 7N 02 Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel with Monolithic Zener ESD Protected Gate EZFETs are an advanced series of power MOSFETs which

diode F4c

Contextual Info: MOTOROLA Order this document by MMDF4C03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F4C 03H D Medium Power Surface Mount Products M otorola Preferred Device Com plem entary TMOS Field Effect Transistors COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS

Contextual Info: TS3A26746E www.ti.com SCDS313C – FEBRUARY 2011 – REVISED MAY 2013 2 X 2 Crosspoint Switch for Audio Applications Check for Samples: TS3A26746E FEATURES 1 • • • • • • • • Ultra Low RON for GND Switch 80-mΩ typical RON for MIC Switch <10-Ω

LUWE6SG

Abstract: E6SG luw e6sg Q65110A7880 Q65110A8458 aa7r
Contextual Info: Power TOPLED long life Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LUW E6SG Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: weißes P-LCC-4 Gehäuse, eingefärbter diffuser Silikon - Verguss

LUWE6SG

Abstract: AA7R luw e6sg KS 0302 KE DIODE 7n OHL02385
Contextual Info: Power TOPLED Enhanced optical Power LED ThinGaN Lead (Pb) Free Product - RoHS Compliant LUW E6SG Released Besondere Merkmale Features • Gehäusetyp: weißes P-LCC-4 Gehäuse, eingefärbter diffuser Silikon - Verguss • Besonderheit des Bauteils: erhöhte

smd transistor 1yc

Abstract: smd tr 1yc smd marking ACH marking code yc SMD Transistor 8302401E marking code EA SMD Transistor 8302401EA A13j 6n140a
Contextual Info: Wißt mLfïM Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers Technical Data HEWLETT PACKARD 6N140A* HCPL-675X 83024 HCPL-570X HCPL-177K 5962-89810 HCPL-573X HCPL-673X 5962-89785 5962-98002 *See m atrix fo r available extensions. Features • D ual M arked w ith D ev ice

TRANSISTOR BC 545

Contextual Info: MOTOROLA O n to r H iin r in ru iM iit SEMICONDUCTOR TECHNICAL DATA by MTDF1P02HD/D Designer’s Data Sheet M T D F 1P 0 2H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistor DUAL TMOS POWER MOSFET

9430DY

Contextual Info: 0G 11M L IM L E M S i Final Electrical Specifications r r u m LT1312 . TECHNOLOGY Single PCMCIA VPP Driver/Regulator M a y 1994 KOTUfKS DCSCRIPTIOn • Digital Selectio n of OV, VEc, 12V or Hi-Z ■ Automatic Switching from 3.3V to 5V ■ 120m A Output Current Capability

Contextual Info: Whp\ HEWLETT mLftM P A C K A R D Herm etically Sealed, High Speed, High CMR, Logic Gate Optocouplers Technical Data 6N134* 81028 HCPL-563X HCPL-663X HCPL-565X 5962-98001 HCPL-268K HCPL-665X 5962-90855 HCPL-560X *See m atrix fo r available extensions. Features

sony tsmc

Abstract: CXK77P18L80AGB CXK77P36L80AGB CXK77P36L80AGB-4 CXK77P36L80AGB-4A
Contextual Info: SONY CXK77P36L80AGB / CXK77P18L80AGB 8Mb LW R-L HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x18 4/42/43/44 Preliminary Description The CXK77P36L80AGB (organized as 262,144 words by 36 bits) and the CXK77P18L80AGB (organized as 524,288 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input

7x17

Abstract: CXK77P18L80AGB CXK77P36L80AGB CXK77P36L80AGB-4 CXK77P36L80AGB-4A
Contextual Info: SONY CXK77P36L80AGB / CXK77P18L80AGB 8Mb LW R-L HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x18 4/42/43/44 Preliminary Description The CXK77P36L80AGB (organized as 262,144 words by 36 bits) and the CXK77P18L80AGB (organized as 524,288 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input

Contextual Info: TS3A26746E SCDS313A – FEBRUARY 2011 – REVISED MAY 2011 www.ti.com 2 X 2 Crosspoint Switch for Audio Applications Check for Samples: TS3A26746E FEATURES APPLICATIONS • • • • • • • • • • 1 • • • Ultra Low RON for GND Switch 80-mΩ typical

43bh

Abstract: marking code 42ae marking JC 6f diode CXK77P18E160GB CXK77P36E160GB CXK77P36E160GB-4AE CXK77P36E160GB-4E 43AF marking 43AF
Contextual Info: SONY CXK77P36E160GB / CXK77P18E160GB 16Mb LW R-L HSTL High Speed Synchronous SRAMs 512K x 36 or 1M x 18 8Mb LW R-L w/ EC HSTL High Speed Synchronous SRAMs (256K x 36 or 512K x 18) 4/42/43/44 Preliminary Description The CXK77P36E160GB (organized as 524,288 words by 36 bits) and the CXK77P18E160GB (organized as 1,048,576 words

CXK77Q18B80AGB

Abstract: CXK77Q36B80AGB CXK77Q36B80AGB-28 CXK77Q36B80AGB-33
Contextual Info: SONY CXK77Q36B80AGB / CXK77Q18B80AGB 28/33/37/4 8Mb LW R-R HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x 18 Preliminary Description The CXK77Q36B80AGB (organized as 262,144 words by 36 bits) and the CXK77Q18B80AGB (organized as 524,288 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input

TSMC single port sram

Contextual Info: SONY CXK77Q36B80AGB / CXK77Q18B80AGB 28/33/37/4 8Mb LW R-R HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x 18 Preliminary Description The CXK77Q36B80AGB (organized as 262,144 words by 36 bits) and the CXK77Q18B80AGB (organized as 524,288 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input