DFJI Search Results

2SC16

Contextual Info: TOSHIBA { D I S C R E TE /O PT O} 3T • - DËTjTOTTaSO □ OOlfH'í 2 - 1 9097250 TOSHIBA DI SC R E T E / O P T O > 39C 01899 □ SEMICONDUCTOR TECHNICAL DATA * 2 b ? * ì? a * TOSHIBA TRANSISTOR 2S01677 SILICON NPN EPITAXIAL PLANAR INDUSTRIAL APPLICATIONS

2SK168

Abstract: VUME
Contextual Info: HITACHI 2SK168-SILICON N-CHANNEL JUNCTION FET VHF AMPLIFIER. MIXER, LOCAL OSCILLATOR 1 I 1 _ 1 1 . 1 1 l _ } IVixn. in rrirn JEDEC TO-92) • ABSOLUTE MAXIMUM RATINGS (Ta-25*C) [tern Symbol MAXIMUM CHANNEL POWER DISSIPATION CURVE

DMP-16

Abstract: NJM2223 NJM2223M
Contextual Info: □ < X ^ H1 <* < w äQ n; n; ä «a < H' g * i S e a- M» V £? s 5 H m CMOSEKi mm CMOSEit *üf¥B m - Ÿ 9 ~Ç \i, .& •i± o ^ 00 « ^ 03 VI . o n ; o. u. en >4 • Î O 'a A ’ 1t£T V\ V ^ * Œ >* A ojo o|n ít d 1i nüE

diode AY 101

Abstract: IPD50R520CP
Contextual Info: NjbW IPD50R520CP CoolMOSTM Power Transistor Product Summary Package V฀*EL;HI฀<?=JG;฀E<฀C;G?I฀0IH฀M฀/Y V฀3BIG7฀BEL฀=7I;฀9>7G=; V"1฀9N\_Si //* P R>M#a`$&_Si * /,*  +- `= QY&ejb V฀#MIG;C;฀:K :I฀G7I;: V฀&?=>฀F;7A฀9JGG;DI฀97F78?B?IN

A5 GNA

Abstract: 2A930
Contextual Info:   ฀   <9.$+7* /' 330 = 3:)5฀!5%26-6735 2EASTQE +;L฀G;KEBJI?ED7GN฀>?=>฀KEBI7=;฀I;9>DEBE=N 09  O ,=L"a`# *(0  )= 1(- 9 ฀2BIG7฀BEL฀=7I;฀9>7G=; -;G?E:?9฀7K7B7D9>;฀G7I;: I'MH,*'- I'MH,*

Contextual Info: 9?3-'@*/,4? 4VVS=>AB=฀#:A0<฀&<,9=4=>:< #<:/?.>฀%?88,<C 7LHZ[XLY - "1฀฀2\&_Si V฀*EL;HI฀<?=JG; E< C;G?I฀0 IH฀M฀/Y + >M#a`$&_Si V฀3BIG7฀BEL฀=7I;฀9>7G=; * Y&ejb 0/* P * -2/  +1 `= V฀&?=>฀F;7A฀9JGG;DI฀97F78?B?IN V฀/J7B?<?;:฀for industrial grade applications 799EG:?D=฀IE฀(#"#!฀฀

10k multiturn preset

Abstract: n500 W111 ADC87 ADC87H MN346 ANA 618
Contextual Info: ADC87 y 12-Bit, 8/iSec MILITARY A/D CONVERTER • ■ MICRO NETWORKS FEATURES • F ully G uaranteed - 5 5 ° C to +125°C O peration • fyisec Max C onversion Tim e • C om plete/Versatile A/D F unction: Internal o r External C lock Internal Reference U ser-O ptional In pu t B uffer

D649

Abstract: CA64 246DH DFJI
Contextual Info: :?AED/@EDAED 4@?64D@BC ^WZ_Yc[X \WX] X`_YXc`ab 56C4B:AD:@? >GMTKYOI PGIQ IUTTKIYUWX GWK NOMNR^ OTYKMWGYKJ JK[OIKX YNGY IUSHOTK TKY\UWQ SGMTKYOIX GTJ B;01 IUTTKIYUWX. :T GJJOYOUT YU IUTTKIYO[OY^, SGMTKYOI PGIQX VWU[OJK XOMTGR IUTJOYOUTOTM, KRKIYWUSGMTKYOI OTYKWLKWKTIK XZVVWKXXOUT GTJ

Contextual Info: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features V *EL;HI<?=JG; E<C ;G?I0 - , M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * -33 " +1 `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9

samxon GR

Abstract: ce-df dh-bh DFJI
Contextual Info: GR R^kb^l RmZg]Zk].ymJ/ FEASTQER 63 Hb`a CU oZen^1 `nZkZgm^^ 7555 akl ehZ] eb_^ Zm =:uC 73 Rnbm _hk nl^ bg ^e^\mkhgb\ \bk\nbml bg \hehnk SU k^\^bo^k1 ob]^h\h]^k ^m\3 cQ]h_^ CBB@V H@Ef cQ]h_^ E@E@V FGBf ROECIFICASINMR Im^f O^k_hkfZg\^ CaZkZ\m^kblmb\l _zo|k~sxq dowzo|k~*|o bkxqo

g7da-28z 8a

Abstract: g7da-28(z) 8a
Contextual Info: 4D>+ 05 %>A7#%(G฀&฀฀%>A7;=@G฀฀(;/:฀(75</:฀ ?/<@7@A=? &?=2B1A฀(B;/?F 8OK]^[O\ B @ &,) ,) M . ?KS ฀1 1) .0 _ . ?KS ฀1 *,) 2, &+') +', ฀ECFB;C;DI7GN฀,฀฀*฀9>7DD;B฀ ฀!D>7D9;C;DI฀CE:; . <K ฀(E=?9฀B;K;B฀ 1฀G7I;:

T460

Contextual Info: 2SD923 Ë ± ' < r7 - h 7 > i > X ? TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH 3 TRANSISTOR ¡ UBT INDUSTRIAL USE POWER SUPPLY : O utline D ra w in g s * Features • Ultra high/? • hFE<7)U—T ' Î T ' l i ? E x c e l l e n t linearity in hFE • A S O ^ JÎl'

JG Diode

Abstract: diode EZD jg transistor T1027 f7 transistor MARKING 7C DIODE marking 7b PG-TO252-3 transistor 7g
Contextual Info: NjbW IPD50R520CP CoolMOSTM Power Transistor Product Summary Package V *EL;HI<?=JG; E<C ;G?I0 IH M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * /,* " +- `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9

we 9d

Contextual Info: 4D>+ 05 % >A7# % ( G &   % >A7; =@G  ( ; /: ( 75</: ?/<@7@A=? & ?=2 B1A( B; ; /?F 8OK]^[O\ B @ &,) ,) M . ?K S 1 1) .0 _" . ?K S  1 *,) 2, &+') +', #  EC FB;C ;DI7GN,  * 9>7DD;B # !D>7D9;C ;DIC E: ; . <K # ( E=? 9 B;K;B  1 G7I ;:  + <K"a`#%_Si

PZ-V1

Abstract: DFJI 1Z10
Contextual Info: ^:_[a6~1 h~|} s/zzy p0.|0v,vw+z m.2~.- c.-20.+z0 ^:_[a6~1 }~|} 1/zzy /0.|0v,vw+z ,.2~.- x.-20.+z0 YaZ c.3-2z0 9fzv230z1 ^*7Mg m*{O >?=>fHF;: EF;G7I?ED ^m EF;G7I?ED CE:;H s /97De vEDI?DJEJHe |D:;Me -GE=G7C ^jk 9EDIGEB 9ECC7D: 7D: om HI;FH E< EF;G7I?EDH

DFJI

Contextual Info: 9?3-'@ 004? 4VVS=>Aa # : A 0<& <,9 =4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY - "1  V *EL;HI<?=JG; E< C ;G?I0 IHiKY 2 \&_Si 0/* + >M#a`$&_Si V 3 BIG7 BEL =7I ;9 >7G=; P *(+33 " * Y&ejb -B `= V # MIG ;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V / J7B ?<?;: for industrial grade applications 79

Contextual Info: NjbW IPD50R520CP CoolMOSTM Power Transistor Product Summary Package V *EL;HI<?=JG; E<C ;G?I0 IH M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * /,* " +- `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9

MHO 23

Abstract: LMKK d888e
Contextual Info: ?=H23 +A>.23=, HEB@; HI9I< G<B9M =RO]^[R\ _ okkk6 >C?F?=NLC= MNL?HANB _ 1BINI CMIF;NCIH _ :?LI =LIMM IL L;H>IG NOLHhIH _ 2?GIP;<F? @CHA?L JLII@ =IP?L ;P;CF;<F? }CF? /Iu |lnoplr _ {IO<F? 3z2 xz IONJON _ 1;H?F GIOHN _ {z IL xz =IHNLIF _ 2I*3 =IGJFC;HN }CF? /Iiu ,pkkqlokp

9CDD

Contextual Info: 3C5/+'? $ =@6" $ ' F ' : .99' 64;.9 >.;?6?@<> % ><1 A0@' A: : .>E 7NJ\]ZN[ ;J V  J7B) 9>7DD;B ' ;J"a`#$_Si V D>7D9;C ;DIC E: ; V 0 BIG7 ' E=?9 B;K;B  1 G7I;:  *( M ) >J   1 ,( _" ) >J  1 -.( $; (&00 7 V  K7B7D9>; G7I;: V , J7B?<?;: 799EG: ?D= IE 

ed7c

Contextual Info: 3CC/ -?G $ =@6" $ ' F ' : .99' 64;.9(>.;?6?@<> % ><1 A0@' A: : .>E 7NJ\]ZN[ ;J V ) 9>7DD;B ' ;J"a`#$_Si V D>7D9;C ;DIC E: ; V 0 BIG7 ' E=?9 B;K;B  1 G7I;:  *( M ) >J   1 ).( _" ) >J  1 *,( $; )&, 7 V  K7B7D9>; G7I;: V , J7B?<?;: 799EG: ?D= IE 

Contextual Info: ZONE 2 LTR A b C C/> F - - 3 3 g 4/4 _ S y iS ttT V Y A M P IN C O R P O R A T E D . A1_L R IG H T S R E S E R V E D . A M P P R O D U C T S CO V ER ED SY P A T E N T S A ND / OR P A T E N T S P E N D IN G . 1 1 R E V IS IO N S D E S C R IP T IO N .ZAO C*A *VAS

th296

Abstract: nis09
Contextual Info:               <9.$+7* /'  330  =  3: )5! 5%26-6735 2EASTQE %$+ ;L G;KEBJI?ED7GN >?=> KEBI7=; I;9>DEBE=N % 2 BIG7 BEL =7I; 9>7G=; %$- ;G?E: ?9 7K7B7D9>; G7I;: I$'MH,*'- 09 %$" O ,=L"a`# *(0 ! )= 1(- 9 !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!I$'MH,*

DFJI

Abstract: JG marking diode EZD transistor 7g
Contextual Info: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features V *EL;HI<?=JG; E<C ;G?I0 - , M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * -33 " +1 `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9

we 9d

Abstract: k17c DFJI
Contextual Info: 4D>* -5 % >A7# % G   % >A7# % ( G &  ( ; /: ( 75</: )?/<@7@A=? & ?=2 B1A( B; ; /?F 8OK]^[O\ B @ &+) +) M . ?K S  1 *.) *-) _" . ?K S  1 +1) +.) &*'. *'. #  EC FB;C ;DI7GN,  * 9>7DD;B . <K # !D>7D9;C ;DIC E: ; + <K"a`#%_Si  / JF;G( E=? 9 B;K;B  1 G7I