DIODE MARKING 7B Search Results

BAS29

Abstract: BAS31 BAS35 diode 7B4
Contextual Info: • E3A33T4 DDDG716 7b4 ■ BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm B A S 2 9 - L20 BAS31 - L21

Contextual Info: PRELIMINARY DATASHEET 200mW SOD-523 SURFACE MOUNT Very Small Outline Flat Lead Plastic Package Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG Device Type BAT42XV2 BAT43XV2 Device Marking 6B 7B TA = 25°C unless otherwise noted Parameter

BAT42XV2

Contextual Info: PRELIMINARY DATASHEET 200mW SOD-523 SURFACE MOUNT Very Small Outline Flat Lead Plastic Package Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG Device Type BAT42XV2 BAT43XV2 Device Marking 6B 7B TA = 25°C unless otherwise noted Parameter

DIODE marking ED

Abstract: marking ya 71A marking GI 536 POWER 15X15 SC802-09 sc802
Contextual Info: SC802-09 1 .OA • Outline Drawing SCHOTTKY BARRIER DIODE I Features • • • • Surface mount device Lo w V f Super high speed switching High reliability by planer design -CATHOOE MARKING -SYMBOL I ED 1 14 H Applications - LOT NO.

Contextual Info: In te rn a tio n a l pd-9.i 6i 7b IRF3315S/L 1QR R e c t i f i e r _PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount IRF3315S Low-profile through-hole (IRF3315L) 175°C Operating Temperature Fast Switching

Contextual Info: POWEREX I NC 1SE D • 7BTMLB1 0 D G 3S 5 3 2 ■ T - 2 .5 ' ^ 2 3 r<M/EREX C C 42 C N 47 Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 SCR/Diode Center Tap

Contextual Info: ?W O ?b Ordering number:EN1281C 0 0 1 S 0 S S 0 7b LB1268 N0.1281C SA \Y O i Monolithic Digital IC 3-Channel, High-Current, Low-Saturation Driver Array Features and Functions • 3-channel magnet driver • High current 2.0A max. and low saturation voltage (1,5V)

BC547 sot package sot-23

Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

Contextual Info: u im TECHNOLOGY LT13 0 7/LT13 0 7B Single Cell Micropower 600kHz PWM DC/DC Converters FCflTURCS D C S C R IP T IO n • Uses Small Ceramic Capacitors ■ 50jjA Quiescent Current LT1307 ■ 1m A Quiescent Current (LT1307B) ■ Operates with V|N as Low as 1V

13001 s 6B

Abstract: AUIRS21844 SD-50 Rectifier Diode marking MDt AUIRS2184 AS2184 AUIRS21844S
Contextual Info: Automotive Grade AUIRS2184 4 S HALF-BRIDGE DRIVER Features • • • • • • • • • • • • Product Summary Floating channel designed for bootstrap operation Fully operational to + 600 V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10 V to 20 V

U840 diode motorola

Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Contextual Info: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in

1N967B

Abstract: 1N967B FAIRCHILD
Contextual Info: 1N957B - 1N979B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Value 500 Units mW 4.0 mW/°C -65 to +200

1N5985B

Abstract: 1N5988B 1N6006B 1N5994B 1N5995B 1N5993B 1N6020B 1N5996B
Contextual Info: Zeners 1N5985B - 1N6025B Zeners 1N5985B - 1N6025B Absolute Maximum Ratings * Tolerance = 5% TA = 25°C unless otherwise noted Symbol PD Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” TJ, TSTG Operating and Storage Temperature Range Derate above 75°C

Melcher M 3000

Abstract: MTBF SIEMENS Melcher M 2000 Melcher AG Melcher 1000 Melcher m 1000 15 v melcher m series Melcher family K 1000 melcher DC- DC Converter
Contextual Info: IMR 15-Family DC-DC Converters <40 W DC-DC Converters Benign Environment IMR 15-Family input to output isolation test voltage500 V OC Single or double output • Input voltage range 2:1 • Input filter built-in • High efficiency up to 82% • Short-circuit-proof

SiA411DJ

Abstract: SiA411DJ-T1-GE3
Contextual Info: New Product SiA411DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.041 at VGS = - 2.5 V - 12a 0.056 at VGS = - 1.8 V - 12 a 0.150 at VGS = - 1.5 V -2 • Halogen-free • TrenchFET Power MOSFET

Contextual Info: International IG R Rectifier pd-ms« IR F 2 8 0 7 S /L preliminary HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF2807S • Low-profile through-hole (IRF2807L) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

Contextual Info: Si5476DU New Product Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.034 at VGS = 10 V 12 0.041 at VGS = 4.5 V 12 VDS (V) 60 Qg (Typ) 10 5 nC 10.5 PowerPAKr ChipFETr Single D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr

SI5476DU-T1-E3

Abstract: Si5476DU
Contextual Info: Si5476DU New Product Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.034 at VGS = 10 V 12 0.041 at VGS = 4.5 V 12 VDS (V) 60 Qg (Typ) 10 5 nC 10.5 PowerPAKr ChipFETr Single D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr

SiA419DJ

Abstract: SiA419DJ-T1-GE3
Contextual Info: New Product SiA419DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.039 at VGS = - 2.5 V - 12a 0.051 at VGS = - 1.8 V - 12 a 0.066 at VGS = - 1.5 V - 12a 0.113 at VGS = - 1.2 V

SiA419DJ

Abstract: S09-1397-Rev
Contextual Info: SiA419DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.039 at VGS = - 2.5 V - 12a 0.051 at VGS = - 1.8 V - 12a 0.066 at VGS = - 1.5 V - 12 a 0.113 at VGS = - 1.2 V - 10.6

Contextual Info: SiA419DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.039 at VGS = - 2.5 V - 12a 0.051 at VGS = - 1.8 V - 12a 0.066 at VGS = - 1.5 V - 12 a 0.113 at VGS = - 1.2 V - 10.6

Si5476DU

Abstract: Si5476DU-T1-GE3
Contextual Info: New Product Si5476DU Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 60 0.034 at VGS = 10 V 12 0.041 at VGS = 4.5 V 12 Qg (Typ.) 10.5 nC PowerPAK ChipFET Single 1 2 3 D D Lot Traceability and Date Code 4 G

SiA411DJ

Abstract: SiA411DJ-T1-GE3
Contextual Info: New Product SiA411DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.041 at VGS = - 2.5 V - 12a 0.056 at VGS = - 1.8 V - 12 a 0.150 at VGS = - 1.5 V -2 • Halogen-free • TrenchFET Power MOSFET

orient 817b

Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
Contextual Info: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada