DIODE MARKING 4T Search Results

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

marking E7B

Contextual Info: SIEMENS BAW56 Silicon Switching Diode Array • For high-speed switching applications • Common anode Type Marking Ordering Code tape and reel B A W 56 A1s Q62702-A688 Pin Configuration Package1) 3 SOT-23 EHMHW Maximum Ratings per Diode Parameter Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 MMBD301 SCHOTTKY BARRIER DIODE FEATURES   Small Surface Mounting Type High Reliability MARKING: 4T MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol

4T sot 23

Abstract: diode marking 4t marking GD sot-23
Contextual Info: MMBD301 Schottky Barrier Diode SOT-23 Features — Surface mount package ideally suited for automatic insertion. Applications — Sourced from process GD. Ordering Information Dimensions in inches and millimeters Type No. Marking MMBD301 Package Code 4T SOT-23

Contextual Info: S IE M E N S BAV 99W Silicon Switching Diode Array >Connected in series 1For high speed switching applications C1/A2 nr T J Type Marking Ordering Code Pin Configuration BAV 99W A7s Q62702-A1051 1=A1 2=A2 Package 3=C1/C2 SOT-323 Maximum Ratings per Diode Symbol

DIODE T25 4 do

Abstract: bb409 DIODE T25 4 DIODE T25 DIODE 409 Q62702-B112 IR 409 H DIODE T25 4 C
Contextual Info: SIEMENS Silicon Variable Capacitance Diode BB 409 • For VHF tuners • Not for new design Type Marking Ordering Code Pin Configuration Package1 BB 409 green Q62702-B112 DO-35 DHD o - ^ -o EHA07001 Maximum Ratings Parameter Symbol

powerex R9G0 2100

Abstract: R9GO 21-XX
Contextual Info: R9G0_21XX GENERAL PURPOSE RECTIFIER DIODE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 2100 Amperes 2200 Volts F DIA. TYP. G DEEP TYP. MARKING CATHODE Powerex General Purpose Rectifier Diodes are designed with high locking voltage

Contextual Info: R9G0_21XX GENERAL PURPOSE RECTIFIER DIODE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 2100 Amperes 2200 Volts F DIA. TYP. G DEEP TYP. MARKING CATHODE Powerex General Purpose Rectifier Diodes are designed with high locking voltage

R7S02415

Abstract: R7S02415XX diode Vfm 419e-02
Contextual Info: R7S0_15XX GENERAL PURPOSE RECTIFIER DIODE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 1500 Amperes 2400 Volts F DIA. TYP. G DEEP TYP. MARKING CATHODE Powerex General Purpose Rectifier Diodes are designed with high locking voltage

Contextual Info: RDS8_80XX GENERAL PURPOSE RECTIFIER DIODE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 8000 Amperes 2500 Volts F DIA. TYP. G DEEP TYP. MARKING CATHODE Powerex General Purpose Rectifier Diodes are designed with high locking voltage capability and

RBS 6000

Abstract: RBS 6000 -ericsson RBS 6000 POWER RATING 373E-03 RBS 200 rbs 2000 RDS82280XXOO
Contextual Info: RDS8_80XX GENERAL PURPOSE RECTIFIER DIODE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 8000 Amperes 2500 Volts F DIA. TYP. G DEEP TYP. MARKING CATHODE Powerex General Purpose Rectifier Diodes are designed with high locking voltage capability and

MARKING rkm

Contextual Info: SC016 i .OA — 'i'X —Y • Outline Drawings GENERAL USE RECTIFIER DIODE ■ Features • m m 'g & rf- sim Surface m o unt device • K ftlK tt I S tjv • Marking High reliability ’ Applications • 1 B B General purpose rectifier applications • y L—

Contextual Info: S IE M E N S BAT 68-03W Silicon Schottky Diode Preliminary data • For mixer applications in the VHF/UHF range • For high speed switching Type Marking Pin Configuration Q62702-A1046 1 =A Package SOD-323 II CM BAT 68-03W K Ordering Code Maximum Ratings Parameter

t930

Abstract: ERA38 T151 T760
Contextual Info: ERA38 o .5A K Ü S E S k • * » ■ * » : Outline Drawings FAST RECOVERY DIODE 3.0 : Features ■15/jv I Marking Super high speed switching • f f i 'W , 5mmki vT g mmA-siffi Ultra small package. * 7 - □ —K : È Color code : White Possible for 5mm pitch automatic insertion

Contextual Info: ERD31 1.5A : Outline Drawings FAST RECOVERY DIODE : Features • Ü /]v : Marking Large current High voltage by mesa design. DKEnfe: W • S fS H S tt f i ' j — K ?—ÿ High reliability 0 3 1 - 0 4 pi . . . . 1 -1 — : Applications • M H z* D-y !±e : 4=6]. T6;

Contextual Info: ERA83-004<ia : Outline D raw ings SCHOTTKY BARRIER DIODE Features • ifeVF IS /K : Marking Low V F Super high speed sw itchin g. • tv— «fElîfe: Ù « ffi i -j afcfgfct e ►►►►► - ti'j—Fv-ÿ High reliability by planer design. • ' J ^ m m f

Contextual Info: SONY CORP/COMPONENT PRODS 4TE D • 0302303 DGGSTSM 3 ■ SLD302WT T -m -o s SONY. 200mW High Power Laser Diode Description SLD302WT is a gain-guided, hlgh-power laser diode with a built-in TE cooler. Fine tuning of the wavelength is possible by controlling the laser chip

diode schottky 4T

Contextual Info: CMLSH2-4T SURFACE MOUNT SILICON TRIPLE ISOLATED LOW VF SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLSH2-4T consists of three 3 isolated silicon Schottky diodes, manufactured in an SOT-563 surface mount package.

diode marking 4t

Abstract: diode schottky 4T 4T SOT 23 4t marking
Contextual Info: CMLSH2-4T Central TM Semiconductor Corp. SURFACE MOUNT SILICON TRIPLE ISOLATED LOW VF SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLSH2-4T consists of three 3 Isolated Silicon Schottky Diodes, manufactured in a PICOmini SOT-563 surface mount package. This device is designed for

diode marking 4t

Abstract: 4t marking diode schottky 4T
Contextual Info: CMLSH2-4T SURFACE MOUNT TRIPLE ISOLATED LOW VF SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLSH2-4T consists of three 3 Isolated Silicon Schottky Diodes, manufactured in a PICOmini SOT-563 surface

diode marking 4t

Abstract: CMLSH2-4T diode schottky 4T 4t MARKING
Contextual Info: CMLSH2-4T SURFACE MOUNT TRIPLE ISOLATED LOW VF SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLSH2-4T consists of three 3 Isolated Silicon Schottky Diodes, manufactured in a PICOmini SOT-563 surface