DIODE MARKING 4T Search Results

HMPP-386x

Abstract: pin diode agilent AN1048 HMPP-3860 HMPP-3862 HMPP-3865 agilent model marking code
Contextual Info: Agilent HMPP-386x Series MiniPak Surface Mount RF PIN Diodes Data Sheet Features • Surface mount MiniPak package – low height, 0.7 mm 0.028" max. – small footprint, 1.75 mm2 (0.0028␣ inch2) • Better thermal conductivity for higher power dissipation

MMBF4856

Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

pin diode microstrip

Abstract: HMPP-3890 pin diode pin diode agilent DEMO-HMPP-389T HMPP-3892 HMPP-3895 HMPP-389T HSMP-3880 HSMP-389T
Contextual Info: Agilent HMPP-389x Series MiniPak Surface Mount RF PIN Switch Diodes Data Sheet Features • Surface mount MiniPak package – low height, 0.7 mm 0.028" max. – small footprint, 1.75 mm2 (0.0028 inch2) • Better thermal conductivity for higher power dissipation

Contextual Info: BB304C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier HITACHI ADE-208-606C Z 4th. Edition Aug. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;

Contextual Info: BIC701M Bias Controlled Monolithic IC VHF/UHF RF Amplifier HITACHI ADE-208-703C Z 4th. Edition Nov. 1, 1998 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gatel.); To reduce using parts cost & PC board space. • High gain;

Contextual Info: BB501M Build in Biasing Circuit MOS FET IC UHF RF Amplifier HITACHI ADE-208-700C Z 4th. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise;

SOD-323F

Contextual Info: Formosa MS SMD Small Signal Schottky Diode BAT42WS / BAT43WS List List. 1 Package outline. 2

Contextual Info: BB305M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier HITACHI ADE-208-607C Z 4th. Edition May 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Superior cross modulation characteristics. • High gain; (PG = 28 dB typ. at f = 200 MHz)

Contextual Info: DS1275 Line-Powered RS-232 Transceiver Chip DALLAS SEMICONDUCTOR FEATURES • Low-power serial transmitter/receiver for tery-backed systems PIN ASSIGNMENT bat­ DOUT [ 1 B ] VCC • Transmitter steals power from receive signal line to save power VDRV [ 2 7 3

Contextual Info: Formosa MS SMD Zener Diode BZT52-S Series List List. 1 Package outline. 2 Features. 2

Hitachi DSA00174

Contextual Info: BIC703C Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-985C Z 4th. Edition Dec. 2000 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz)

Zener diode smd marking WU

Abstract: Zener diode wz 140
Contextual Info: Formosa MS SMD Zener Diode BZT52 Series List List. 1 Package outline. 2 Features. 2

Diode LT 410

Contextual Info: F = 7 SCS -THOMSON * 7 i» MDS35 M 3 © iL iC T [i» g S DIODE /THYRISTORMODULE FEATURES • V d rm = V rrm UP T 0 1200 V ■ lT(AV = 25 A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE: INSULATING VOLTAGE 2500 V(rmS) DESCRIPTION The MDS35 family are constitued of one rectifier

Hitachi DSA0096

Abstract: 1SV70 BIC801M marking code g2s
Contextual Info: BIC801M Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-705C Z 4th. Edition Nov. 1, 1998 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High gain; PG = 27 dB typ. (at f = 200 MHz), PG = 21.5 dB typ. (at f = 900 MHz)

sot-23 MARKING CODE nm

Abstract: marking code SS SOT23 SS MARKING sot23 AP2318GEN sot23 marking code SS A2 SOT-23 mosfet
Contextual Info: AP2318GEN RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive D ▼ Small Outline Package BVDSS 30V RDS ON 1.5Ω ID ▼ Surface Mount Device 500mA S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to

ZENER DIODE 339b

Abstract: 339B
Contextual Info: MCC TM Micro Commercial Components Features x x x x x • SMBJ5338B THRU SMBJ5369B
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Low Profile Package for Surface Mountiong Flat Handling

A842

Abstract: Diode 1N 4007
Contextual Info: Extract from the online catalog UT 4-MTD-DIO/L-R Order No.: 3046210 Feed-through modular terminal block, Connection method: Screw connection, Cross section: 0.14 mm² - 6 mm², AWG 26 - 10, Width: 6.2

Contextual Info: Extract from the online catalog UT 2,5-MTD-DIO/R-L Order No.: 3064140 Component terminal block, Connection method: Screw connection, Cross section: 0.14 mm² - 4 mm², AWG 26 - 12, Width: 5.2 mm,

DIODE SMD w9

Abstract: DIODE smd Wj SOt23 Zener diode smd marking z2 sot
Contextual Info: SMD Zener Diode BZX84C2V4 THRU BZX84C75 Formosa MS List List. 1 Package outline. 2

Contextual Info: Formosa MS SMD Zener Diode MMSZ5221BS THRU MMSZ5267BS List List. 1 Package outline. 2

MM5Z5221B

Abstract: sod 523fl MM5Z5226B
Contextual Info: Formosa MS Zener Diode MM5Z5221B THRU MM5Z5262B List List. 1 Package outline. 2 Features. 2

1N5225

Contextual Info: Formosa MS Zener Diode 1N5221B THRU 1N5267B List List. 1 Package outline. 2 Features. 2

DO-35G

Contextual Info: Formosa MS BZX55C2V4 THRU BZX55C100 Zener Diode List List. 1 Package outline. 2 Features. 2

NP70N04MUG

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid