DIODE MARK L2 Search Results

Zener Diode B1 9

Abstract: hzu2.2btlf HZU22B1 PRI 504 diode
Contextual Info: HZU Series Silicon Epitaxial Planar Zener Diode for Stabilizer Features Outline • Ultra small Resin package URP is suitable for surface mount design. Cathode mark Mark T r i= • These diodes are delivered taped. itr H 2 Ordering Information Type No. Laser Mark

7B1 zener diode

Abstract: Zener Diode B1 9 zener 3B2 HZU3.3 HZU22B1
Contextual Info: ADE-208-024C Z HZU Series Silicon Epitaxial Planar Zener Diode for Stabilizer HITACHI Features Rev. 3 Aug. 1995 Outline • Ultra small Eesin Package (URP) is suitable for surface mount design. • These diodes are delivered taped. Cathode mark Mark Ordering Information

IRF32N50k

Abstract: IRF32N50 SWITCHING WELDING SCHEMATIC BY MOSFET AN-7536 IGBT ZVT Full bridge ZVT Full bridge transformer IGBT resonant converter for welding FQA28N50F FDH45N50F Welding topologies
Contextual Info: www.fairchildsemi.com AN-7536 FCS Fast Body Diode MOSFET for Phase-Shifted ZVS PWM Full Bridge DC/DC Converter Sampat Shekhawat, Mark Rinehimer and Bob Brockway Discrete Power Group, Fairchild Semiconductor Introduction Topology Description Efficiency, power density, reliability, and cost are

qo-10

Abstract: diode mark L2
Contextual Info: HITACHI ADE-208-413 Z HSC277 Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch HITACHI Features Rev. 0 Nov. 1995 Outline • Low forward resistance. (rp().7i2 max) • Ultra small Flat Package (UFP) is suitable for surface mount design. Cathode mark

1N4001 SMD

Abstract: DIODE 1N4001 SMD DIODE 1N4001 AN-630 AN630 FU-445 1N4001 ADN2841 fu-445sdf
Contextual Info: AN-630 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • Tel: 781/329-4700 • Fax: 781/326-8703 • www.analog.com ADN2841 Optical Evaluation Kit By Ferenc Barany, Mark Murphy, and Michael O’Flanagan INTRODUCTION This application note describes the ADN2841 laser diode

new bright R288-2

Abstract: 24c08an new bright R288 ac14g ICS950405 CADIN14 K8T800 y532 quanta PHD108NQ03LT
Contextual Info: 5 4 3 2 1 ZI5 SYSTEM BLOCK DIAGRAM H/W MONITOR D THERMAL DIODE IN 200/266/333MHZ AMD Althon 64 P3 DDR DIMM P3, 4 DC/DC SMDDR_VTERM BOM mark ＊:no stuff P@:with PR stuff ＊@:with PR no stuff 19V IN P27,28 D DDR DIMM HyperTransport Link Y2-14.318MHz Y1-27MHz

A1708

Abstract: VBT1-S5-S5-SMT BSS84LT1G MSWSS-020-40 RK73B2HTTD181J KOA Chip Resistors Packaging capacitor 22-25 mosfet 6 ghz BSS84LT1 J-STD-20C
Contextual Info: MSWSS-020-40 PIN Diode Series Shunt Integrated Switch Element 4 3 3 1 2,4 1 2 2012 Laser mark is input Description Features • Supports up to 20 watts power when cold switched • Low insertion loss 0.3 dB typical up to 2.7 GHz • High Isolation 50 dB typical up to 2.7 GHz

bzx79c5v6

Abstract: zener diode 1w, 5v 2.1 ghz 4 WATTS 5v
Contextual Info: MSWSS-020-40 PIN Diode Series Shunt Integrated Switch Element 4 3 3 1 2,4 1 2 2012 Laser mark is input Description Features A broadband, high linearity, medium power series shunt integrated switch element in a 1.9 X 1.1 mm QFN package. This device is designed for WiMax, Wibro, WLAN, TDSCDMA and other wireless infrastructure applications. It

1-450-358-11

Abstract: SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE
Contextual Info: TA-VE150 SERVICE MANUAL AEP Model UK Model This amplifier has the Dolby Surround system. Manufactured under license from Dolby Laboratories Licensing Corporation. “Dolby”, the double-D symbol a and “Pro Logic” are trademarks of Dolby Laboratories Licensing Corporation.

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002SLT1G N–Channel SOT–23 3 • We declare that the material of product compliance with RoHS requirements. 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002DMT1G N–Channel SC–74 • We declare that the material of product compliance with RoHS requirements. • ESD Protected:1000V MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage

l2n7002dw1t1g

Abstract: CASE 419B-02 sot363 ON Marking DS
Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps,60 Volts L2N7002DW1T1G N–Channel SC-88 • We declare that the material of product are Halogen Free and compliance with RoHS requirements. • ESD Protected:1000V MAXIMUM RATINGS Rating Symbol Value

16FL2CZ

Contextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED 16(D, F)L2CZ47A Unit in SWITCHING MODE POWER SUPPLY APPLICATION. 10.3 MAX CONVERTER & CHOPPER APPLICATION. • Repetitive Peak Reverse Voltage - 03.2 ± 0.2 - : V r r m =200, 300V • Average Output Rectified Current : Io=16A

sot88

Abstract: 419B-02
Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–88 L2N7002DW1T1G/T3G • Pb−Free Package is Available. MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60 Vdc Drain−Gate Voltage RGS = 1.0 MW VDGR

702 sot

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60

L2N7002DW

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps,60 Volts L2N7002DW1T1G S-L2N7002DW1T1G N–Channel SC-88 • We declare that the material of product are Halogen Free and compliance with RoHS requirements. • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring

L2N7002DMT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002DMT1G S-L2N7002DMT1G N–Channel SC–74 • We declare that the material of product compliance with RoHS requirements. • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product compliance with RoHS requirements. 1 • ESD Protected:1000V 2 CASE 318, STYLE 21 SOT– 23 TO–236AB MAXIMUM RATINGS

100L2CZ

Abstract: 10GL2CZ 100L2C 10FL2CZ 10dl2cz
Contextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED 10(D,F,G)L2CZ47A SWITCHING TYPE POWER SUPPLY APPLICATION. Unit in mm CONVERTER & CHOPPER APPLICATION. 10.3 MAX 03.2±O .2 • Repetitive Peak Reverse Voltage : V^^=200, 300, 400V • Average Output Recified Current : Io=10A

Contextual Info: 10 D L2 C48 A, 10 FL2 C48A, U10 D L2 C48 A, U10 FL2 C48A TO SHIBA TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10DL2C48A, 10FL2C48A, U10DL2C48A, U10FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. •

hep silicon diode

Abstract: 36CP D5160
Contextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HEP 2Q(Q F)L2CZ47A Unit in mm SWITCHING MODE POWER SUPPLY APPLICATION. 10.3 MAX CONVERTER & CHOPPER APPLICATION. 03-2 ± 0 .2 -y~~- • Repetitive Peak Reverse Voltage : V^g^=200, 300V • Average Output Rectified Current : Io=20A

autofocus IC

Abstract: L435 l2402
Contextual Info: Selection Guide Peak Wavelength Element Radiant Output Cutoff Frequency nm Material Power*’ (m W ) Emission* 4 Applications (M H z) A rea (mm) 50 ¿ 0 .3 Type Listed No. Page Herm etically Sealed Package LED G aAIAs 1.5 with microball tens) 1.4 830 G aAIAs

FS50H

Abstract: DIODE u5 5dl2c
Contextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED C /n C \l O P /IQ A Ü \U , T / L £ U * t O M U5(D, F)L2C48A O SW ITCHING TYPE POW ER SUPPLY APPLICATION. O CONVERTER & CHOPPER APPLICATION. • Repetitive Peak Reverse Voltage : V r r m = 200, 300V

SH marking diode

Contextual Info: TO SHIBA U20J L2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U 20J L2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION Unit in mm CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage V r RM = 600V • Average Output Rectified Current