DIODE MARK L2 Search Results

1N4001 SMD

Abstract: DIODE 1N4001 SMD DIODE 1N4001 AN-630 AN630 FU-445 1N4001 ADN2841 fu-445sdf
Contextual Info: AN-630 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • Tel: 781/329-4700 • Fax: 781/326-8703 • www.analog.com ADN2841 Optical Evaluation Kit By Ferenc Barany, Mark Murphy, and Michael O’Flanagan INTRODUCTION This application note describes the ADN2841 laser diode

A1708

Abstract: VBT1-S5-S5-SMT BSS84LT1G MSWSS-020-40 RK73B2HTTD181J KOA Chip Resistors Packaging capacitor 22-25 mosfet 6 ghz BSS84LT1 J-STD-20C
Contextual Info: MSWSS-020-40 PIN Diode Series Shunt Integrated Switch Element 4 3 3 1 2,4 1 2 2012 Laser mark is input Description Features • Supports up to 20 watts power when cold switched • Low insertion loss 0.3 dB typical up to 2.7 GHz • High Isolation 50 dB typical up to 2.7 GHz

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002SLT1G N–Channel SOT–23 3 • We declare that the material of product compliance with RoHS requirements. 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60

16FL2CZ

Contextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED 16(D, F)L2CZ47A Unit in SWITCHING MODE POWER SUPPLY APPLICATION. 10.3 MAX CONVERTER & CHOPPER APPLICATION. • Repetitive Peak Reverse Voltage - 03.2 ± 0.2 - : V r r m =200, 300V • Average Output Rectified Current : Io=16A

sot88

Abstract: 419B-02
Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–88 L2N7002DW1T1G/T3G • Pb−Free Package is Available. MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60 Vdc Drain−Gate Voltage RGS = 1.0 MW VDGR

L2N7002DW1T1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFEO 115 mAmps, 60 Volts N–Channel SOT–363 L2N7002DW1T1G/T3G • Pb−Free Package is Available. MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60 Vdc Drain−Gate Voltage RGS = 1.0 MW VDGR

702 sot

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60

L2N7002DW

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps,60 Volts L2N7002DW1T1G S-L2N7002DW1T1G N–Channel SC-88 • We declare that the material of product are Halogen Free and compliance with RoHS requirements. • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring

L2N7002DMT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002DMT1G S-L2N7002DMT1G N–Channel SC–74 • We declare that the material of product compliance with RoHS requirements. • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product compliance with RoHS requirements. 1 • ESD Protected:1000V 2 CASE 318, STYLE 21 SOT– 23 TO–236AB MAXIMUM RATINGS

100L2CZ

Abstract: 10GL2CZ 100L2C 10FL2CZ 10dl2cz
Contextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED 10(D,F,G)L2CZ47A SWITCHING TYPE POWER SUPPLY APPLICATION. Unit in mm CONVERTER & CHOPPER APPLICATION. 10.3 MAX 03.2±O .2 • Repetitive Peak Reverse Voltage : V^^=200, 300, 400V • Average Output Recified Current : Io=10A

Contextual Info: 10 D L2 C48 A, 10 FL2 C48A, U10 D L2 C48 A, U10 FL2 C48A TO SHIBA TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10DL2C48A, 10FL2C48A, U10DL2C48A, U10FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. •

hep silicon diode

Abstract: 36CP D5160
Contextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HEP 2Q(Q F)L2CZ47A Unit in mm SWITCHING MODE POWER SUPPLY APPLICATION. 10.3 MAX CONVERTER & CHOPPER APPLICATION. 03-2 ± 0 .2 -y~~- • Repetitive Peak Reverse Voltage : V^g^=200, 300V • Average Output Rectified Current : Io=20A

autofocus IC

Abstract: L435 l2402
Contextual Info: Selection Guide Peak Wavelength Element Radiant Output Cutoff Frequency nm Material Power*’ (m W ) Emission* 4 Applications (M H z) A rea (mm) 50 ¿ 0 .3 Type Listed No. Page Herm etically Sealed Package LED G aAIAs 1.5 with microball tens) 1.4 830 G aAIAs

SH marking diode

Contextual Info: TO SHIBA U20J L2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U 20J L2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION Unit in mm CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage V r RM = 600V • Average Output Rectified Current

Contextual Info: T O SH IB A 10J L2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2CZ47A Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATION 10.3MAX. CONVERTER & CHOPPER APPLICATION • • • • ' 03.2±O.2 1 / 3^ ' Repetitive Peak Reverse Voltage

Contextual Info: TO SHIBA U20J L2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U 20J L2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION Unit in mm CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage V r RM = 600V • Average Output Rectified Current

J20-D

Abstract: diode 20D 20dl2c diode mark L2C diode+20dl2c
Contextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED o n / n H I n n ü O A Z U \ U , I / L Z U t ’O A U20(D, F)L2C48A O SWITCHING TYPE POWER SUPPLY APPLICATION. O CONVERTER & CHOPPER APPLICATION. • Repetitive Peak Reverse Voltage : V r r m = 200, 300V

6ak5 tube

Abstract: 12AX7 6BA6 tube DIODE ME C108 ScansU9X26 9 PIN TUBE SOCKET 12AX7
Contextual Info: Section 5 MAINTENANCE SECTION V MAINTENANCE 5.1. INSPECTION. 5 .1 .1 . GENERAL. - This radio equipment has been constructed of m aterials considered to be the best obtainable for the purpose, and has been carefully inspected and adjusted at the factory to reduce

KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION

Contextual Info: TOSHIBA 10 J L2 C 4 8 A #U 10 J L2 C 48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2C48A, U10JL2C48A SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • • • • Repetitive Peak Reverse Voltage Average Output Rectified Current

MB4213

Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors

NEC PS2581

Abstract: PS2581
Contextual Info: DATA SHEET PHOTOCOUPLER PS2581L1 ,PS2581 L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 4-PIN PHOTOCOUPLER -N E P O C S e rie s - DESCRIPTION T he P S 2 581 L1 , P S 2 581 L2 are o p tica lly co u p le d iso lato rs c o n ta in in g a G aA s light em ittin g d io d e and an NPN

LD33 VOLTAGE REGULATOR

Abstract: LD33 regulator LD33 VOLTAGE REGULATOR 3.3v LD33 SOT 223 LD33 LD33 SOT223 Analog Marking Information LD50 VOLTAGE REGULATOR LD33 marking SOT223 marking ld33
Contextual Info: Packaging for Automatic Handling — Tape & Reel General Description Tape & Reel Surface mount and TO-92 devices are available in tape and reel packaging. Surface mount components are retained in an embossed carrier tape by a cover tape. TO‑92 device leads are secured