DIODE LZ 99 Search Results

MB11A02

Abstract: thyristor cs3 MB11A06 cs3 thyristor thyristor tt 142 n
Contextual Info: POüJEREX INC "TÏ TETMbEl D0D1Ö35 S D T-S lZ - H C-Series Fast Single Diode Modules Vrrm IFSM trr typical VlSOL (Amps) (°C) (Volts) (Amps) (fisec) (Vrms) Package 20 20 20 50 50 50 100 100 100 200 300 121 121 121 105 105 105 60 60 60 60 60 600 1000 1200

B2X55C

Abstract: B2X55 B2X55-C10 BZX55C4 BZX55C13
Contextual Info: Zener Diodes BZX55 Series 500 mW Zener Diodes DO-35 Glass Package TA = 25 °C Type BZX55-C0V8) BZX55-C2V7 BZX55-C3V0 BZX55-C3V3 BZX55-C3V6 BZX55-C3V9 BZX55-C4V3 BZX55-C4V7 BZX55-C5V1 BZX55-C5V6 BZX55-C6V2 BZX55-C6V8 BZX55-C7V5 BZX55-C8V2 BZX55-C9V1 B2X55-C10

Contextual Info: ZMM1 THRU ZMM75 ZENER DIODES Mini-MELF _FEATURES_ ♦ Silicon Planar Zener Diodes ♦ In Mini-MELF case especially for automatic insertion. C athode Mark .142 3 . 6 .134 ( 3 . 4 ) .019 ( 0 . 4 8 ) .011 ( 0 . 2 8 ) ♦ The Zener voltages are graded according to the

Contextual Info: ZPD1 THRU ZPD75 ZENER DIODES DO-35 FEATURES ♦ Silicon Planar Zener Diodes ♦ The Zener voltages are graded according to the international E 12 standard. Smaller voltage tolerances and other Zener voltages are available upon request. h Ijj m ax. 0 .0 7 9 2.0

ip13a

Contextual Info: TT TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA CDISCRETE/OPTO SEMICONDUCTOR ¿ToÀhìhn D e J t O T 7SSD D D l b ö E S T 99D TOSHIBA FIELD 16822 t r P S ^ - lZ ) EFFECT TRANSISTOR Y T F 4 5 1 SILICON TECHNICAL DATA N CHA N NE L MOS TYPE 7T-M0S I ) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

1n728 DO-4

Abstract: in823 IN751 in822 mic in2829 1N2163 1N8272 1N736 in821a in823a
Contextual Info: V . X S ¡1 II *< 5: x =3£= tt — « S. =/>2= C V 999 Il C O 't r s o o o o o o o o o o o d d r t cd in o od in c\i in r s 00 C l ^ C SË i II o o o NÛ-? o o o OOO q o ° odd o o o «5SO 00 O'. CM cm o r s in t—I CM CM a> r s •-i in o o o o o o n i co o

Contextual Info: SANKEN ELECTRIC CO LTD SSE P 7^0741 DOGlGbH 7ST M S A K J Power Zener Diode 7e / / - / ? Mesa type silicon diode. Even in car electronics, there are devices to protect against power surges in every kind of electronic apparatus. PZ628 Absolute maximum ratings

diode MARKING CODE A9

Abstract: 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
Contextual Info: 4. List of Principal Characteristics of Diodes 4. List o f Principal C h a r a c t e r istic s o f D io d e s * S c h o ttk y b a r r i e r diode. 59 4. List of Principal Characteristics o f Diodes U nit : mm u se S-M IN I U SM SS M 1 1 125*8:i s 5 H- pl *il"

Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 03/31/99 Last Update Date: 05/27/99 Last Major Revision Date: 03/31/99 MN54LVX3383-X REV 0A0 10-Bit Low Power Bus-Exchange Switch General Description The LVX3383 provides two sets of high-speed CMOS TTL-compatible bus switches. The low on

Contextual Info: MOTOROLA Order this document by MR2835S/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MR2835S O vervoltage Transient Su p p re sso r . . . designed for applications requiring a diode with reverse avalanche characteris­ tics for use as reverse power transient suppressor.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5221B SERIES 500 mW DO-35 Glass Zener Voltage Regulator Diodes 500 mW DO-35 GLASS GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 500 Milliwatt Hermetically Sealed Glass Silicon Zener Diodes GLASS ZENER DIODES 500 MILLIWATTS

feature of ic UM 66

Abstract: RH 2D 1002 2x5 SFF evaluation board 6 pin 2D 1002 diagram remote control receiver and transmitter diode Lz 66 iscsi PIN photodiode A/W 850nm Pressure transmitter 4 WIRE SFP/GBIC EVALUATION BOARD
Contextual Info: AFBR-59R5LZ/AFBR-59R5ALZ Digital Diagnostic 2x7 SFF 850 nm 4.25/2.125/1.0625 GBd, RoHS-Compliant Optical Transceiver Data Sheet Description Features Avago Technologies’ AFBR-59R5LZ/AFBR-59R5ALZ referred to as AFBR-59R5*LZ optical transceiver supports high-speed serial links over multimode optical

171271

Abstract: 17127 991625 DIODE s2l 37 178570000 SE 135
Contextual Info: Index Alphabetical Description Part No. P age No. A Description Part No. B LZ 7.50/2/90 B K 1701900000 P age No. Description 20 E Part No. P age No. A M 25 900154 48 B LZ 7.50/3/180 BK 1628040000 20 E W 35 f o r T S 35 38356 28 A M 35 900108 48 B LZ 7.50/3/270 B K

DS26LV31

Abstract: DS26LV31W-QML
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 07/31/98 Last Update Date: 07/19/99 Last Major Revision Date: 05/05/99 MNDS26LV31-X REV 1A0 3V ENHANCED CMOS QUAD DIFFERENTIAL LINE DRIVER General Description The DS26lV31 is a high-speed quad differential CMOS driver that is comparable to the

BQ25A

Abstract: BQ-25a AD7574 MX7574KCWN T BQ25C MAX160 MAX160CPN MAX160CWN MAX160EPN MAX160EWN
Contextual Info: y n y j x i y n liP C o m p a tib le 8 B it A /D C o n v e rte r The A/Ds are designed to easily interface with micro­ processors by appearing as a memory location or I/O port without the need for external interfacing logic. Data outputs use latched, three-state buffer circuitry

HD74HC640

Abstract: HD74HC640P HD74HC643 PRDP0020AC-B
Contextual Info: HD74HC640, HD74HC643 Octal Bus Transceivers with 3-state outputs REJ03D0637-0200 (Previous ADE-205-517) Rev.2.00 Mar 30, 2006 Description Each device has an active enable G and a direction control input, DIR. When DIR is high, data flows from the A inputs

HD74HC620

Abstract: HD74HC620P HD74HC623
Contextual Info: HD74HC620, HD74HC623 Octal Bus Transceivers with inverted 3-state outputs Octal Bus Transceivers (with 3-state outputs) REJ03D0636-0200 (Previous ADE-205-516) Rev.2.00 Mar 30, 2006 Description This octal bus transceiver is designed for asynchronous two-way communication between data buses. The control

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

74125 ic pin diagram

Contextual Info: yi/iyjxiyki nP C o m p a tib le Q B it A /D C o n verter The MAX160 and MX7574 are low cost, m icropro­ cessor com patible 8 bit an a lo g-to -d ig ita l converters which use the successive-approxim ation technique to achieve conversion tim es o f 4/is MAX160 and 15^s

D1R20

Contextual Info: RECTIFIER DIODES SHINDENGEN ELECTRIC MF6 32E D 021=1307 QGaaoib 7 ISHE4_ Diodes*for Microwave*Oven*g - 'fefî ] . nn fê * f I I ± 5Ê fê Absolute Maximum Ratings é V rm lo [k V ] [A ] f* To PC] S R K -1 2 Z B T 0 6 7 0.4 50 -1 2 Z B (T 0 7 ) 8 0.3S

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

P4C174

Contextual Info: P4C174 P4C174 HIGH SPEED 8K x 8 CACHE TAG STATIC RAM FEATURES High Speed Address-To-Match - 8 ns Maximum Access Time Data Retention at 2V for Battery Backup Operation Advanced CMOS Technology High-Speed Read-Access Time Low Power Operation — Active: 750 mW Typical at 25 ns

Contextual Info: TOSHIBA TC74HC03AP/AF/AFN Quad 2-Input NAND Gate Open Drain The TC74HC03A is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.

i300n

Abstract: IT0-22
Contextual Info: d b lG B T ^ ^ J .“ ^ -y 1200 300 r N ^ ,J—X j 2MBI300N-120 T > ' f W N -> I - X j V / A/ •¿HHl: : Features • S i i l i * -f "j + 'y 'f #V /± Eflfr High Speed Switching Voltage Drive % •& .< > #<7 9 r Low Inductance Module Structure 4 f ii> l