DIODE LZ 99 Search Results

MB11A02

Abstract: thyristor cs3 MB11A06 cs3 thyristor thyristor tt 142 n
Contextual Info: POüJEREX INC "TÏ TETMbEl D0D1Ö35 S D T-S lZ - H C-Series Fast Single Diode Modules Vrrm IFSM trr typical VlSOL (Amps) (°C) (Volts) (Amps) (fisec) (Vrms) Package 20 20 20 50 50 50 100 100 100 200 300 121 121 121 105 105 105 60 60 60 60 60 600 1000 1200

HD74LVCZ16240A

Abstract: Hitachi DSA0015 OZ 9902
Contextual Info: HD74LVCZ16240A 16−bit Buffers/Line Drivers with 3–state Outputs 暫定仕様 第1版 `99.02 概要 HD 74 LV CZ1 62 40 A は, 4 8 ピンパッケージに 1 6 個のインバータドライバ 3 ステート出力 で構成されてい ます。 このドライバは 4 個ずつ組になっており各組は“L”レベルの時に出力がイネーブルになる 1G~4G で別々

HD74LVCZ16244A

Abstract: diode zh 22 Hitachi DSA0015 4A2 diode
Contextual Info: HD74LVCZ16244A 16−bit Buffers/Line Drivers with 3–state Outputs 暫定仕様 第1版 `99.02 概要 HD74LVCZ16244A は, 48 ピンパッケージに 16 個のバッファ 3 ステート出力 で構成されています。 このバッファは 4 個ずつ組になっており各組は“L”レベルの時に出力がイネーブルになる 1G~4G で別々

PHL 505

Abstract: HD74LVCZ16245A 481A1 Hitachi DSA0015
Contextual Info: HD74LVCZ16245A 16−bit Bidirectional Transceivers with 3–state Outputs 暫定仕様 第1版 `99.02 概要 HD74LVCZ16245A は, 48 ピンパッケージに 16 個の双方向バッファ 3ステート出力 で構成されています。 方向コントロール入力 (DIR) が“H”レベルの時は A から B へ“L”レベルの時は B から A へ信号が伝達で

HD74LVCZ244A

Abstract: Hitachi DSA0015
Contextual Info: HD74LVCZ244A Octal Buffers/Line Drivers with 3–state Outputs 暫定仕様 第1版 `99.02 概要 HD74LVCZ244A は, 20 ピンパッケージに 8 個のバッファ 3 ステート出力 で構成されています。 このバッファは 4 個ずつ組になっており各組は“H”レベルの時に出力がイネーブルになる 1 G, 2 G で別々

OZ 9902

Abstract: HD74LVCZ240A Hitachi DSA0015
Contextual Info: HD74LVCZ240A Octal Buffers/Line Drivers with 3–state Outputs 暫定仕様 第1版 `99.02 概要 HD74LVCZ240A は, 20 ピンパッケージに 8 個のインバータドライバ 3ステート出力 で構成されています。 このバッファは 4 個ずつ組になっており各組は“L”レベルの時に出力がイネーブルになる 1 G, 2 G で別々

HD74LVCZ245A

Abstract: Hitachi DSA0015 v5 phl 042
Contextual Info: HD74LVCZ245A Octal Bidirectional Transceivers with 3–state Outputs 暫定仕様 第1版 `99.02 概要 HD74LVCZ245A は, 20 ピンパッケージに 8 個のバストランシーバ 3ステート出力 で構成されています。 方向コントロール (T/ R) が“H”レベルの時は A から B へ“L”レベルの時は B から A へ信号が伝達できま

Contextual Info: Non-promotional not for new designs FTR-K1 SERIES POWER RELAY 1 POLE - 1/3/5/10A Medium Load Control LZ Series n FEATURES UL, CSA, SEV recognized Contact rating types - Low level to 10 amps switching l Standard and high sensitivity types available l High surge strength version available

600va ups

Abstract: lz 01 hp 600va ups Fujitsu LZ lz 150 190VA LZ-HSE diode 77G
Contextual Info: FTR-K1 SERIES POWER RELAY 1 POLE - 1/3/5/10A Medium Load Control LZ Series n FEATURES UL, CSA, SEV recognized l Contact rating types - Low level to 10 amps switching l Standard and high sensitivity types available l High surge strength version available l

B2X55C

Abstract: B2X55 B2X55-C10 BZX55C4 BZX55C13
Contextual Info: Zener Diodes BZX55 Series 500 mW Zener Diodes DO-35 Glass Package TA = 25 °C Type BZX55-C0V8) BZX55-C2V7 BZX55-C3V0 BZX55-C3V3 BZX55-C3V6 BZX55-C3V9 BZX55-C4V3 BZX55-C4V7 BZX55-C5V1 BZX55-C5V6 BZX55-C6V2 BZX55-C6V8 BZX55-C7V5 BZX55-C8V2 BZX55-C9V1 B2X55-C10

Contextual Info: ZMM1 THRU ZMM75 ZENER DIODES Mini-MELF _FEATURES_ ♦ Silicon Planar Zener Diodes ♦ In Mini-MELF case especially for automatic insertion. C athode Mark .142 3 . 6 .134 ( 3 . 4 ) .019 ( 0 . 4 8 ) .011 ( 0 . 2 8 ) ♦ The Zener voltages are graded according to the

Contextual Info: ZPD1 THRU ZPD75 ZENER DIODES DO-35 FEATURES ♦ Silicon Planar Zener Diodes ♦ The Zener voltages are graded according to the international E 12 standard. Smaller voltage tolerances and other Zener voltages are available upon request. h Ijj m ax. 0 .0 7 9 2.0

ip13a

Contextual Info: TT TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA CDISCRETE/OPTO SEMICONDUCTOR ¿ToÀhìhn D e J t O T 7SSD D D l b ö E S T 99D TOSHIBA FIELD 16822 t r P S ^ - lZ ) EFFECT TRANSISTOR Y T F 4 5 1 SILICON TECHNICAL DATA N CHA N NE L MOS TYPE 7T-M0S I ) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

1n728 DO-4

Abstract: in823 IN751 in822 mic in2829 1N2163 1N8272 1N736 in821a in823a
Contextual Info: V . X S ¡1 II *< 5: x =3£= tt — « S. =/>2= C V 999 Il C O 't r s o o o o o o o o o o o d d r t cd in o od in c\i in r s 00 C l ^ C SË i II o o o NÛ-? o o o OOO q o ° odd o o o «5SO 00 O'. CM cm o r s in t—I CM CM a> r s •-i in o o o o o o n i co o

957b

Abstract: ic 957B 1N956B
Contextual Info: 1N 957B thru 1N 992B DO-7 Microsemi Corp. f SANTA ANA. CA T h e ô ioG e e x p e r ts SCOT! S DA I E A Z / / F o r m o r e i n f o r m a ti o n call: 602 94 (-6300 FEATURES SILICON • 6.8 TO 2 00 V Z E N E R V O L T A G E R A N G E • 1N 962B T H R U 1N 992B H A V E JAN . J A N T X A N D J A N T X V Q U A L IF IC A T IO N S

Contextual Info: DISCRETE SEMICONDUCTORS BZA420A Quadruple ESD transient voltage suppressor Product specification Supersedes data of 1998 Oct 30 Philips Semiconductors 1999 May 20 PHILIPS PHILIPS Philips Semiconductors Product specification Quadruple ESD transient voltage suppressor

diode MARKING CODE A9

Abstract: 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
Contextual Info: 4. List of Principal Characteristics of Diodes 4. List o f Principal C h a r a c t e r istic s o f D io d e s * S c h o ttk y b a r r i e r diode. 59 4. List of Principal Characteristics o f Diodes U nit : mm u se S-M IN I U SM SS M 1 1 125*8:i s 5 H- pl *il"

R2j diode

Abstract: Zener Diode SOD-323 smd code UM r2u zener General Semiconductor diodes 89a bly diode zener 8v5 melf zener diode smd ayz smd
Contextual Info: Technical Information Index of Sym bols Q ot C apacitance, diode capacitance CL C apacitance of load capacitor f Frequency fin Frequency of input voltage fmax Max. frequency of voltage to be rectified fP Pulse frequency Series resonance frequency Pp Pulse pow er

4A3 enter diode

Abstract: diode a62 zm 1021
Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification Voltage regulator double diodes PZM-NA series FEATURES PINNING • Total power dissipation: max. 220 mW per diode PIN DESCRIPTION • Small plastic package suitable for surface mounted

PH C5V1

Abstract: C5V6 ph PH C6V2 ic SMD MARKING CODE ad 5.9 C8V2 PH ph c8v2
Contextual Info: DISCRETE SEMICONDUCTORS Preliminary specification File under Discrete Semiconductors, SC01 Philips Sem iconductors 1998 Aug 05 PHILIPS Philips Semiconductors Preliminary specification Voltage regulator diodes BZX84LN series PINNING FEATURES • Total power dissipation: max. 250 mW

Contextual Info: DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS Philips Semiconductors Preliminary specification Voltage regulator double diodes PZM-NA series FEATURES PINNING • Total power dissipation: max. 220 mW per diode PIN DESCRIPTION • Small plastic package suitable for surface mounted

Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 03/31/99 Last Update Date: 05/27/99 Last Major Revision Date: 03/31/99 MN54LVX3383-X REV 0A0 10-Bit Low Power Bus-Exchange Switch General Description The LVX3383 provides two sets of high-speed CMOS TTL-compatible bus switches. The low on

4A2 zener diode

Abstract: 1N4569 JAN 1N4570A JANTX 1n4573 20771 1N4565A 1N4565A-1 1N4565AUR-1 Zener do35 marking code 9 a2 1N4566A
Contextual Info: MIL S P E C S 44 E ]> • 0000125 0033734 7 ■MILS The documentation and process | conversion measures necessary to | comply with this amendment shall be | completed by 2 November 1993 j - 1 |[NCH-POUND] 1- J

4897a

Contextual Info: 1N4896 • 12.8 VOLT NOMINAL ZENER VOLTAGE + 5% thru • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 1N4915A • LOW NOISE • METALLURGICALLY BONDED -1 • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS O p e ra tin g T e m p e ra tu re : -6 5 ” C to + 1 7 5 "C