DIODE LT 4A 03 Search Results

Transistor 169k

Contextual Info: 11.2005 Battery Charger Solutions High Performance Analog ICs Linear Technology’s high performance battery charger ICs Each battery chemistry has unique battery-charging require- enable long battery life by providing precision charging ments. Selecting the correct battery charger increases the

NTC 2.2K

Abstract: LTC4054L DFN-16 LT1510 LT1512 LT1513 LT1769 LTC4010 LTC4011 LTC4060
Contextual Info: 11.2005 Battery Charger Solutions High Performance Analog ICs Linear Technology’s high performance battery charger ICs Each battery chemistry has unique battery-charging require- enable long battery life by providing precision charging ments. Selecting the correct battery charger increases the

LTC4006

Abstract: LT1512 LTC4060 LTC1759 DFN-16 LT1510 LT1513 LT1769 LTC4010 LTC4011
Contextual Info: 02.2007 Battery Charger Solutions High Performance Analog ICs Linear Technology’s high performance battery charger ICs Each battery chemistry has unique battery-charging require- enable long battery life by providing precision charging ments. Selecting the correct battery charger increases the

2SK1939

Abstract: 2SK1939-01 SC-65 T151 A2281
Contextual Info: 2SK1939-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features Outline Drawings • High speed switching • Low on-resistance 03,2±O.l 45*0-2 • No secondary breakdown • Low driving power • High voltage Gate • V GS-=t30V Guarantee

Contextual Info: Ordering number:EN 4566 SB40-03T No.4566 Schottky Barrier Diode 30V, 4A Rectifier A pplications - High frequency rectification switching regulators, converters, choppers . F eatu res • Low forward voltage (Vp max = 0.55V). • Fast reverse recovery time (trr max = 30ns).

cr1018

Abstract: 1N914 diode LT1959 LT1959CS8 MBRD835L MMBD914LT1 diode lt 238 DC-355 7-Lead Plastic DD Pak
Contextual Info: DEMO MANUAL DC355/DC356 NO-DESIGN SWITCHER LT1959 Monolithic 4A Switcher 5V to 15V Input 1.8V Output U DESCRIPTIO Demonstration circuits DC355 and DC356 are complete DC/DC step-down regulators using the LT 1959 constant frequency, high efficiency converter in 7-pin DD DC356

Contextual Info: HAT3006R Silicon N Channel / P Channel Power MOS FET High Speed Power Switching HITACHI Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP-8 4 7 8 D D 5 6 D D ò ô Neh Pch S1 S3 1, 3 Source

ECG5322

Abstract: ECG5328 ECG5315 ECG5344 ECG5324 ECG5304 ECG5348 ECG5329 ECG5326 ECG5342
Contextual Info: P H ILI PS E C G INC SME D Bridge Rectifiers MÊ ^ 5 3 ^ 2 0 D 0 0 7 2 QÔ T S 3 IECG Silicon Sin gle -P h ase P e a k R e v e rse V o lt a g e ( P R V V o lts) |Q, A v e r a g e R ec tifie d F o rw a rd C u rre n t ( A m p s ) 1A 1.5 A 2A 100 4A ECG166

Contextual Info: |appllcationH INFO • available ] y UNITRODE 1 UCC2918 UCC3918 Low On Resistance Hot Swap Power Manager FEATURES DESCRIPTION • Integrated 0.06£2 Power MOSFET The UCC3918 Low on Resistance Hot Swap Power Manager provides complete power management, hot swap capability, and circuit breaker functions. The only

Contextual Info: ÖIXYS Thyristor Modules Thyristor/Diode Modules MCC 26 iTRMS = 2 x 50 A MCD 26 ITAVM = 2 x 3 2 A V RRM = 8 - 1 v RRM V DSM V DRM V V Version 1 B Version 8 B Version 8 B 900 1300 1500 1700 800 1200 1400 1600 MCC 26-08ÌO1 B MCC 26-12io1 B MCC 26-14io1 B MCC 26-08ÌO8 B

EVM31-050A

Abstract: ae9t b49 diode M203 P151 T151 JU 0003 EVM31-050 JT diode
Contextual Info: EVM31-050A 150A : Outline Drawings POWER TRANSISTOR MODULE • i t s : Features ij —7^4 07 K ftj • h jF E ^fti.' •m m Including Free Wheeling Diode' High DC Current Gain Insulated Type : Applications >9 Power Switching • A C i- ^ W AC M otor Controls

2N7002 12w

Abstract: 12w 2n7002 TO-220 2N7002 1N4002 LT1580 LT1580CT LT1584 LT1580CT7-25 LTC1267
Contextual Info: LT1580/LT1580-2.5 7A, Very Low Dropout Regulator U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ The LT 1580 is a 7A low dropout regulator designed to power the new generation of microprocessors. The dropout voltage of this device is 100mV at light loads rising to

fet ba7 transistor

Abstract: k106 transistor transistor 9651 fet ba7 IRF520 IRF521 k 106 40411 transistor D84CK2 transistor 40411
Contextual Info: IRF520,521 D84CL2.K2 ßOTlRi°IMäg IFHT FIELD EFFECT POWER TRANSISTOR 8 AMPERES 1100, 60 VOLTS RlDS ON = 0.3 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

2N7002 12w

Abstract: 12w 2n7002 LT1580 LT1580C LT1580CQ LT1580I LT1580IQ LT1584 lt 1257 LTC1267
Contextual Info: LT1580/LT1580-2.5 7A, Very Low Dropout Regulator U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ The LT 1580 is a 7A low dropout regulator designed to power the new generation of microprocessors. The dropout voltage of this device is 100mV at light loads rising to

GFIJ

Contextual Info: 2SK2027-01 FU JI POWER M OS-FET IM-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES Outline Drawings • Features • High speed switching 03.6*0.2 • Low on-resistance < k5±02 l.3±0.2 • No secondary breakdown • l.ow driving power • High voltage • V gs = ± 3 0 V Guarantee

LT1587ADJ

Abstract: 2N7002 12w 12v 10A regulator zvn4206 application 1N4002 LT1581 LT1581CT7 LT1584
Contextual Info: LT1581/LT1581-2.5 10A, Very Low Dropout Regulators U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ The LT 1581 is a 10A low dropout regulator designed to power the new generation of microprocessors. The dropout voltage of this device is 100mV at light loads rising to

Diode LT 023

Contextual Info: Thyristor Modules Thyristor/Diode Modules MCC 95 iTRMS = 2 x 180 A MCD 95 iTAVM =2x116A V = 800-1800 V RRM T 0 -2 4 0 AA v RSM V V DSM V DRM V V Version 1 B 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC MCC MCC MCC MCC T y P e rrm 95-08io1 95-12io1 95-14io1

Contextual Info: 2SK1385-01R FUJI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET F - I I S E R I E S lOutline Drawings • Features ¡•Hicjh speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V CSS = ± 3 0 V Guarantee

Contextual Info: Q Thyristor Modules Thyristor/Diode Modules MCC 310 MCD 310 ^TRMS ^TAVM = 2 x 500 A = 2 x 320 A v RRM = 800 -1800 V v RSM V RRM v DSM V DRM V V Type 800 900 1300 1500 1700 1900 1200 1400 1600 1800 Version 1 Version 1 MCC 310-08io1 MCC 310-12io1 MCC 310-14io1

DIL-16

Abstract: SOIC-16 UCC3912
Contextual Info: INTEGRATED CIRCUITS UCC3912 U N IT R O D E Programmable Electronic Circuit Breaker Integrated 0.15 ohm Power M OSFET 3 V to 8V Operation Digital Program mable Current Lim it from 0 to 3A Minimal External Components 1¡.i A Ic c w hen Disabled Program m able on Time

2SK2078

Abstract: transister diode sg 5 ts
Contextual Info: TOSHIBA 2SK2078 Discrete Semiconductors Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType c-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance • r d s (o n > = 1 -Q Q ( T y p .)

TM 1628 driver display

Abstract: OF IC 723 linear regulator LTC1759 SMBus smart inverter controller ccfl 12v dc to dc mobile charger circuit ESD Pushbutton data sheet IC15F MMBD914LTI 20a Battery Charger philips 1n4148 sot-23
Contextual Info: I N N SMBus 2 VDD SMBus ACCELERATOR LTC1694 2 RESET 5V 3.3V 12V VPPEN KEYBOARD CONTROLLER 2.XV ENABLE *LTC1436A *LTC1702/03 *LTC1735/36 CORE DC/DC CONVERTER LOW VOLTAGE PENTIUM II PROCESSOR POWER PROCESSOR, MEMORY AND CORE LOGIC BACKLIGHT AND CONTRAST GENERATOR

SSN SOT-23

Abstract: LTC3452 LTC3445 LTC1734 LTC1734L LTC4054L LTC4056 LTC4057 2x2 dfn lt1618
Contextual Info: 06.2006 Power Management for Portable Products High Performance Analog ICs Power Management for Portable Products CCD Bias Page 16 CCD MAIN 1-10 Backlight and Camera Flash White LED Drivers Page 17– 20 SUB 1-6 RGB 4096 colors CAM (1A MAX) 1-8 AUX 1-4 Up to 40V

Contextual Info: UCC3912 UNITRODE Programmable Hot Swap Power Manager FEATURES DESCRIPTION 3V to 8V Operation Digital Programmable Current Limit from 0 to 3A Electronic Circuit Breaker Function 1ixA Icc when Disabled The internal 4 bit DAC allows programming of the fault level current from 0