DIODE LT 450 Search Results

IR E78996

Abstract: E78996 rectifier module E78996 Diode E78996 E78996 IR IRKH136-16D25 14D20 IR E78996 135 KL23014
Contextual Info: International H ]Rectifier Power Modules Thyristor with high voltage diode Voltage Range lT A V @ T c i f (a v (1) (2) (3) (4) Diode •TSM' >FSM (5) R th JC DC ) (3) (4) Thyristor (V) (V) (A) (°C ) 50 H z (A) IRKH136-14D20 IRKH136-16D25 IRKL136-14D20

dsei 31-06c

Contextual Info: Fast Recovery Epitaxial Diode FRED Type 440 640 400 600 Symbol LT— I <H-H- 1-0 DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C Test Conditions DSEI 2x 30 DSEI 2x 31 Maximum Ratings (per diode) ^FRM TVJ T\um Tc = 85°C; rectangular, d = 0.5

DD100HB160

Abstract: 1S43 DF30CA DF60A df30aa
Contextual Info: S A NS HA ELECTRIC MF 6 CO T> 37E 7 cm S 4 3 ÖOOOOOb 1 E lT s E M J DIODE . T'Z3-0? ISOLATED TYPE 3 PHASE DIODE MODULE TYPE DF20AA DF20BA DF20CA DF20DB DF30AA DF30BA DF30CA DF30DB DF40AA V A *C 1200-1600 400— 800 800— 1600 400—800 1200-1600 400—800

Contextual Info: Bulletin 127101 rev. B 04/98 International IO R Rectifier IRK. SERIES THYRISTOR/ DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 1 3 5 A • H ig h v o lt a g e I E le c t r ic a lly is o la te d b a s e p la te ■ 3 0 0 0 V RMS is o la tin g v o lt a g e

ltg2

Abstract: LT3464ETS8
Contextual Info: LT3464 Micropower Boost Converter with Schottky and Output Disconnect in ThinSOT U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 3464 is a micropower step-up DC/DC converter with integrated Schottky diode and output disconnect

lemc3225

Abstract: murata lqh32cn470k GMK212 LMK107 LT3464 LT3464ETS8 LEMC3225-100 c3464 8D26 LEMC3225-68
Contextual Info: Final Electrical Specifications LT3464 Micropower Boost Converter with Integrated Schottky and Output Disconnect in ThinSOT U • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 3464 is a micropower step-up DC/DC converter with integrated Schottky diode and output disconnect

Contextual Info: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

22B27

Abstract: BZY95-C39 BZY95C18 BZY96-C6V8 BZY96 BZY95C10 BZY96C5V1 IN1765 BZY95-C10 BZY96-C5V1
Contextual Info: SEMITRON INDUSTRIES LT» 43E D • & 137 &&^ BZY9S/BZY96/Z2 OOOOISI O B S L C B SERIES Hermetically Sealed Metal Package ■Voltage Regulator Diode Released to BS/CECC 9305-F082 ■Voltage Range 3.0 to 400 Volts 1.5 Watt Steady State ■400 Watt Peak Power

a boost dc to ac inverter

Abstract: LT1930 sharp oled display LQH32CN100K53 LQH32CN150K53 LT3494 LT3494EDDB dc ac inverter circuit
Contextual Info: LT3494/LT3494A Micropower Low Noise Boost Converters with Output Disconnect FEATURES DESCRIPTION • The LT 3494/LT3494A are low noise boost converters with integrated power switch, Schottky diode and output disconnect circuitry. The parts use a novel* control technique resulting in low output voltage ripple as well as high

LT3494EDDB

Abstract: LQH32CN100K53 LQH32CN150K53 LT3494 CDHED13 f06c g0105
Contextual Info: LT3494/LT3494A Micropower Low Noise Boost Converters with Output Disconnect FEATURES DESCRIPTION • The LT 3494/LT3494A are low noise boost converters with integrated power switch, Schottky diode and output disconnect circuitry. The parts use a novel* control technique resulting in low output voltage ripple as well as high

JU003

Contextual Info: ETK81-O5O 50a S ± / < 7 — POWER TRANSISTOR MODULE I f ô ii : : Features ij ' s r y i * - K r t s * 7 'j- s iw High DC Current Gain • hFE*', S ' . ' • ífe ltífí Including Free Wheeling Diode Insulated Type : Applications • • AC AC M otor Controls

transistor bel 100

Abstract: transistor f151 B-429 30S3 F151 M606 transistor BC 2500
Contextual Info: 6DI5OZ-12O 50a ‘ Outline Drawings POWER TRANSISTOR MODULE I 12 0 13 « I : F e a tu re s • S lt / E High Voltage • 7U— Krtilc • A S O ^ Ja I ' Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type • A p p lic a tio n s 31

92C605

Abstract: RADIOTRON triode rca company Scans-0017338
Contextual Info: DIODE-TRIODE-POWER AMPLIFIER PENTODE F i 1 ament C o a te d 1 .4 d -c v o lt s V o lt a g e amp. 0.1 C u rre n t Maxim um O v e r a l 1 L e n g t h 3 -5 / 1 6 " 2 -3 / 4 " Maxim um S e a t e d H e ig h t Maxim um D ia m e t e r 1 -5 / 1 6 " B u lb T -9 S k irte d M in ia t u r e - S t y l e C

Contextual Info: rrunm TECHNOLOGY LT1572 100kHz, 1.25A Sw itching R eg ulato r w ith C a tc h D iode F€fflUR€S DCSCRIPTIOn • ■ ■ ■ ■ ■ ■ ■ ■ The LT 1572 is a 1.25A 100kHz monolithic switching regulator with on-board switch and catch diode included in one package. It combines an LT1172 with a 1A Schottky

Contextual Info: Te m ic BA604 TELEFUN KEN Sem iconductors Silicon Planar Diode Applications General purpose .- 4 l - Absolute Maximum Ratings Tj = 25 °C P a r a m e te r T e s t C o n d it io n s Type P e a k r e v e r s e v o lt a g e , n o n r e p e titiv e R e v e r s e v o lta g e

GE-SPCO Statte rower component Malvern

Abstract: ge 142 6rt2 A880 6rt217
Contextual Info: S3E D GE-SPCO • 3Ö7MSÖM GGOGIMS ^ 7 ^ « Û E S P A880 Statte row er Component tm eràtion M aívenuPA USA 'V- of-Z.3 77mm RECTIFIER DIODE 4500 V L2900A- The A880 rectifier diode features a nominal 77mm silicon junction diameter design, manufactured by

IRF840

Abstract: irf840 power supply IRF842 IRF841 IRF843 Application of irf840 irf84 55TT mosfet 3205 IRF342
Contextual Info: Standard Power MOSFETs - IRF840, IRF841, IRF842, IRF843 File Number Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -C H A N N EL ENHA N C EM EN T MODE 7 A and 8 A, 450 V - 500 V

Contextual Info: R O P E R A TIO N A L A M P LIFIE R S FEATURES • HIGH VOLTAGE — 450V ±225V • HIGH SLEW RATE — IOOOV/.llS • HIGH OUTPUT CURRENT — 200mA APPLICATIONS • • • • HIGH VOLTAGE INSTRUMENTATION PIEZO TRANSDUCER EXCITATION PROGRAMMABLE POWER SUPPLIES UP TO 430V

Contextual Info: H P ! * 't * » - • * « .1 w - ' t .» > PA85 •PA85A APEX MICROTECHNOLOGY CORPORATION « APPLICATIONS HOTLINE 8 0 0 546-APE X 8 0 0 -5 4 6 -2 7 3 9 FEATURES • HIGH VOLTAGE — 450V • HIGH SLEW RATE — 1000V/|iS • HIGH OUTPUT CURRENT — 200mA

Contextual Info: a m p l if ie r s PA88 • PA88A APEX M IC R O TEC H N O LO G Y CORPORATION • APPLICATIONS HOTLINE 800 546-APEX 800-546-2739 FEATURES • • • • • HIGH VOLTAGE — 450V LOW QUIESCENT CURRENT — 2mA HIGH OUTPUT CURRENT — 100mA PROGRAMMABLE CURRENT LIMIT

Contextual Info: M T M IL [fS IK M S I une Final Electrical Specifications LT1671 TECHNOLOGY 60ns, Low Power, Single Supply, Ground-Sensing C om parator J u ly 1998 FEATURES DCSCRICTIOn • Low Power: 450uA ■ Fast: 60ns at 20mV Overdrive 85ns at 5m V Overdrive ■ Low Offset Voltage: 0.8m V

LT1016

Abstract: LT1116 LT1394 LT1671 LT1671CS8 Ultrafast Recovery diode 12ns
Contextual Info: Final Electrical Specifications LT1671 60ns, Low Power, Single Supply, Ground-Sensing Comparator July 1998 U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low Power: 450µA Fast: 60ns at 20mV Overdrive 85ns at 5mV Overdrive Low Offset Voltage: 0.8mV

Contextual Info: HA17524 Series Switching Regulator Controller • FEA TU RES HA17524G • ® Pulse W idth Modulation PW M Wide Oscillation Frequency R a n g e 450kHz (typ) Lo w Quiecent C u rre n t. 5mA typ • Good Line Regulation (0.2% typ) and Load Regulation

Contextual Info: T O SH IB A TD62M4503AFN TO SH IBA BIPO LAR D IGITAL INTEGRATED CIRCUIT M ULTI-CHIP Tnfi7M ARn3AFN • MF' ^«F ■V ■ ■ MF MF M » ■ BW POWER MOS FET 4CH SINK DRIVER TD62M 4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Power MOS FET 2 S K 1 0 7 8 x4 and Diodes