DIODE LAK Search Results

MMAD1108

Contextual Info: MMAD1108 e3 Switching Diode Array Steering Diode TVS ArrayTM Available DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-Pin SOIC package for use as steering diodes protecting

Contextual Info: MMAD1103 e3 Switching Diode Array Steering Diode TVS ArrayTM Available DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-Pin SOIC package for use as steering diodes protecting

Contextual Info: MAD1103 e3 Available Switching Diode Array Steering Diode TVS ArrayTM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-Pin DIP package for use as steering diodes protecting up

DT-670-SD

Abstract: Silicon Diode DT-470 dt 670 c cu DT-670A-SD DT-670C-SD DT-670B-SD DT-670 Lake Shore Cryotronics DT-670E-BR Silicon Diode DT-670
Contextual Info: LakeShore DT-670 Series Silicon Diode Temperature Sensor Lake Shore’s DT-670 diode temperature sensors are the most advanced silicon diodes in Lake Shore’s extensive line of cryogenic temperature sensors. Backed by more than thirty years of excellence in cryogenic temperature

Contextual Info: MAD1103 e3 Available Switching Diode Array Steering Diode TVS ArrayTM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-Pin DIP package for use as steering diodes protecting up

Contextual Info: MAD1108 e3 Available Switching Diode Array Steering Diode TVS ArrayTM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-Pin DIP package for use as steering diodes protecting up

Contextual Info: MAD1109 e3 Available Switching Diode Array Steering Diode TVS ArrayTM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-Pin DIP package for use as steering diodes protecting up

Contextual Info: MMAD1103 e3 Switching Diode Array Steering Diode TVS ArrayTM Available DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-Pin SOIC package for use as steering diodes protecting

1N4148 JANTX microsemi

Abstract: 1N4148 JANTX 1N4148 JANTXV 1N4148UB 1n4148 general diode microsemi 1n4148 EIA-418D
Contextual Info: 1N4148UB Compliant Qualified Levels: JAN, JANTX, and JANTXV Switching Diode Qualified per MIL-PRF-19500/116 DESCRIPTION This 1N4148UB switching/signal diode features ceramic bodied construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with very fast switching

1N4148 JANTX microsemi

Abstract: 1N4148 JANTXV MELF Package EIA-418D
Contextual Info: 1N4148UBC Compliant Qualified Levels: JAN, JANTX, and JANTXV Switching Diode Qualified per MIL-PRF-19500/116 DESCRIPTION This 1N4148UBC switching/signal diode features ceramic body with ceramic lid construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with

semiconductor

Abstract: hirect H507CH Hirect diode H400TB
Contextual Info: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5

1N4148 JANTXV

Abstract: 1N4148UB2 EIA-418D
Contextual Info: 1N4148UB2 Compliant Two Pin Ceramic Switching Diode Qualified per MIL-PRF-19500/116 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This 1N4148UB2 switching/signal diode features ceramic body construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with very fast switching

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ISOLATED DIODE ARRAY Qualified per MIL-PRF-19500/474 DEVICES LEVELS 1N6100 JAN JANTX JANTXV DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions

1N6101

Abstract: 1N6101 JAN
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ISOLATED DIODE ARRAY Qualified per MIL-PRF-19500/474 DEVICES LEVELS 1N6101 JAN JANTX JANTXV DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ISOLATED DIODE ARRAY Qualified per MIL-PRF-19500/474 DEVICES LEVELS 1N5770 JAN JANTX JANTXV DESCRIPTION These low capacitance diode arrays with common anode are multiple, discrete,

10-PIN

Abstract: 1N5768 1N5770 diode 474 a
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ISOLATED DIODE ARRAY Qualified per MIL-PRF-19500/474 DEVICES LEVELS 1N5768 JAN JANTX JANTXV DESCRIPTION These low capacitance diode arrays with common cathode are multiple, discrete,

l7001

Contextual Info: LASER DIODE NDL7001 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP MQW-DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1 310 nm laser diode especially designed fo r optical data com m unications. The M ultiple Quantum Well MQW structure can achieve stable operation at high tem perature {+85 "Ci.

UPP1004

Abstract: UPP1001 UPP1002 APP1004
Contextual Info: m m m Wturtown, HA m Micnosemi SURFACE MOUNT PACKAGE PIN DIODE 400 V 2.5 WATT Commercial Two-Way Radio Antenna Switch Diode UPP1001 UPP1002 UPP1004 FEATURES DESCRIPTION . . . . With high isolation, low loss, and low distortion characteristics, this Hicroseii P o w e n i t e PIN diode is perfect for two-way radio antenna switch

SSRN

Contextual Info: DATA SHEET LASER DIODE MODULE [ N D L 7 5 1 P InGaAsP MQW-DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION DESCRIPTION NDL7510P is a 1 310 nm newly developed M ultiple Quantum Well MOW structure pulsed laser diode DIP module with singlemode fiber and internal thermo-electric cooler. It is designed fo r a light source of optical measurement equipment

zener diode RD2.2S

Abstract: RD2.0HS rd2.2m nec 10f RD16MW str 450 a RD4.3HS NEC Zener diode RD3.0M RD3.0HS RD51P
Contextual Info: Diode Zener Diode • Zener Diode Quick Reference 1/2 Vz (V) P (W) TYP. 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 Package 0.2 0.15 RD4.7UJ RD5.1UJ

solar panel blocking diode

Contextual Info: SFDS1045Le3 HALOGEN Schottky Barrier Photovoltaic Bypass Diode FREE DESCRIPTION The SFDS1045Le3 is a single Schottky rectifier assembled in a thin flexible package. The device is designed specifically for use as a photovoltaic bypass diode for solar panels. Its low

Contextual Info: SHARP PC450T11 PC450T11 Photocoupler with Built-in Breakdown Diode for Surge Voltage Absorption • Features ■ Outline Dimensions 1. Built-in breakdown diode for absorption of surge voltage 2. High current transfer ratio CTR: MIN. 1 500% at I F= 5mA

5BJC4100

Abstract: F5BHC 5BBC3820
Contextual Info: General Purpose, Pulse and DC Transient Suppression F5B Series Metallized Polyester Film with Integrated Suppression Diode, 18 – 63 VDC Overview Applications The F5B Series is a metallized polyester film capacitor with an integrated suppression diode encapsulated in a thermosetting

5BJC4100

Contextual Info: General Purpose, Pulse and DC Transient Suppression F5B Series Metallized Polyester Film with Integrated Suppression Diode, 18 – 63 VDC Overview Applications The F5B Series is a metallized polyester film capacitor with an integrated suppression diode encapsulated in a thermosetting