DIODE KE 8 Search Results

Contextual Info: SKN 6000 THYRISTOR BRIDGE,SCR,BRIDGE Disc Diode Rectifier Diode SKN 6000 EFC8 EFF8 E VJJ ZJJ E VJJ ZJJ G?KE H OJJJ K L'17P IQJR S/ H QT U$N CWX OJJJYJV CWX OJJJYJZ OJJ OJJ CWX OJJJYJO Symbol Conditions G?KE '17P IQJR BC$ INR S/ H QT LIJJN U$ Values Units OJJJ LTZJJN

302GB

Contextual Info: SEMiX 302GB128D Absolute Maximum Ratings Symbol Conditions IGBT  . .23 6 "8+     SEMiX 2 SPT IGBT Modules SEMiX 302GB128D Target Data Features                  ! "  !     

diode KE 8

Abstract: diode KE
Contextual Info: SEMiX 302GB128D Absolute Maximum Ratings Symbol Conditions IGBT  . .23 6 "8+     SEMiXTM 2 SPT IGBT Modules SEMiX 302GB128D Target Data Features                  ! "  !     

TCD1254GFG(8Z)

Contextual Info: SKM 75GB063D 8% W PX YH+ / * 00 ,4&)5?20) 09)%2D2)@ Absolute Maximum Ratings Symbol Conditions IGBT GHF1 8Z W PX YH :H 8Z W NXO YH :H^_ ¥OO G NOO L 8%'0) W ]X YH ]X L NXO L a PO G 8Z W NPX YH NO f0 8%'0) W PX YH ]X L 8%'0) W gO YH XO L NXO L 8Z W NXO YH hhO

Contextual Info: SKiiP 36NAB126V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper J;CR .; .;1X J/CR & P GF Q;N 4+8*&& 2'-* 79&* &@*,969*5 (& P GF UVSW Q; ([ Diode - Inverter, Chopper MiniSKiiP 3 (& P GF UVSW Q; .$ .$1X ([

Contextual Info: SKiiP 26AC126V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter J;CR .; .;1X J/CR & P GF Q;N 4+8*&& 2'-* 79&* &@*,969*5 (& P GF UVSW Q; '@ Y L K& (¥ Diode - Inverter MiniSKiiP 2 .$ .$1X (& P GF UVSW Q; '@ Y L K& (¥ 3-phase bridge inverter

Contextual Info: SKiiP 37AC126V2 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter J;CR .; .;1Y J/CR & P GF Q;N 4+8*&& 2'-* 79&* &@*,969*5 (& P GF UVSW Q; '@ Z L K& (¥ Diode - Inverter MiniSKiiP 3 .$ .$1Y (& P GF UVSW Q; '@ Z L K& (¥ 3-phase bridge inverter

Contextual Info: SKM 100GB063D 7% U OV WH+ / * 00 ,3&)4?20) 09)%2D2)@ Absolute Maximum Ratings Symbol Conditions IGBT GHF1 7X U OV WH :H 7X U MVN WH :H]^ ZNN G M[N L 7%'0) U ¥N WH MNN L ONN L ` ON G MN d0 7%'0) U OV WH MNN L 7%'0) U eN WH ¥V L ONN L ¥ON L ONN L 8 fN EEE g MVN

Contextual Info: 3bE D S E M I K R O N INC V rsm • 0l3L>b71 G 0 0 2 2 4 b SEMIKRON ^.n .0-7 60 A SEMIPACK 0 Rectifier Diode Modules 38 A SKKD15 SKKE15 Ifrms m aximum values fo r continuous operation V rrm 24 A21; 28 A31 I 2 4 A 2);2 8 A 3) I I fav ( sin. 180; Tease ~ 7 1°C )

SED40KE

Abstract: "Schottky Rectifiers"
Contextual Info: HIGH VOLTAGE SCHOTTKY RECTIFIERS Solid State Devices, Inc. SSDI is excited to release its new high voltage, low VF schottky rectifiers for the military and aerospace industries. The examples below feature 40 - 80 amp, 150 - 200 volt schottky rectifiers with TX, TXV, & S level screening available. Screening is based on MIL-PRF-19500. Screening flows are available on request. Contact us today for samples or more information about our high reliability schottky devices.

Contextual Info: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package . 50“ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger

Contextual Info: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50° nominal beam angle • 880 nm wavelength » Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106

sfb455

Abstract: sn76881 diode 937 ke sn7689 sn76751n 752N
Contextual Info: V iT e x a s I n strum en ts LIMITED MAMUFACTUMM6 SPECIFICATION APRIL 2, 1980 TEXAS INSTRUMENTS LIMITED TENTATIVE SPECIFICATION 30 CHANNEL REMOTE CONTROL TRANSMITTER RES, 002 93 2 SN76742N SN76752N FORMERLY SN76831N16/832N16 THIS DESCRIPTION IS INTENDED ONLY FOR ENGINEERING EVALUATION

diode 1.5 ke 36 ca

Abstract: diode KE KE200A 520C DO-204AC KE10 KE10A
Contextual Info: P6 KE 6.8 . P6 KE 440CA, P6 KE 520C Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 600 W Nominal breakdown voltage Nominale Abbruch-Spannung

Contextual Info: ▼ Semiconductor, Inc. TC 74 TINY SERIAL DIGITAL THERMAL SENSOR FEATURES • ■ ■ ■ ■ ■ Digital Temperature Sensing in SOT-23-5 Package Outputs Temperature as an 8-Bit Digital Word Simple Serial Port Interface Solid State Temperature S ensing.

P6KE27A diode

Abstract: KE300
Contextual Info: P6 KE 6.8 . P6 KE 440CA, P6 KE520C Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 600 W Nominal breakdown voltage Nominale Abbruch-Spannung

diode 1.5 ke 36 ca

Abstract: KE200A KE 75 DIODE KE 76 DIODE ke39 KE10 KE10A KE11 KE11A KE-25
Contextual Info: 1.5 KE 6.8 . 1.5 KE 440CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 1500 W Nominal breakdown voltage Nominale Abbruch-Spannung

Contextual Info: SK 50 MLI 066 Absolute Maximum Ratings Symbol Conditions IGBT 45, 6 ! 6 . :;1 2 !=>  . 01 23        . 01 2 IGBT Module SK 50 MLI 066  899 4 1; $  . ;9 2 <1 $ :99 $ ? 09 4 !=>. 0  ! 4 . 89 4@ 4"5 A 09 4@ 45, B 899 4 Units

ke51a

Abstract: KE 76 DIODE 6BL7 diode KE 300 ke300a P4 diode diode 1.5 ke 36 ca KE160A KE200A KE39
Contextual Info: P4 KE 6.8 . P4 KE 440CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 400 W Nominal breakdown voltage Nominale Abbruch-Spannung

Contextual Info: SK 50 MLI 066 Absolute Maximum Ratings Symbol Conditions IGBT 45, 6 ! 6 . :;1 2 !=>  . 01 23        . 01 2 899 4 1; $  . ;9 2 <1 $ :99 $ ? 09 4 !=>. 0  ! IGBT Module SK 50 MLI 066  4 . 89 4@ 4"5 A 09 4@ 45, B 899 4 Units

AT731

Abstract: BAT54 CDRH3D16-220 ELJPC220KF LEM2520-220 LQH3C220 SC-70-5L bord and component layout circuit 731 zener diode operation amplifier 731
Contextual Info: AT731 White LED Step-Up Converter Immense Advance Tech. DESCRIPTION FEATURES Inherently Matched LED Current The AT731 is a step-up DC/DC converter specifi- High Efficiency: 84% Typical cally designed to drive white LEDs with a constant Drives Up to Four LEDs from a 3.2V Supply

Contextual Info: D P ril1H 9n th 1998 1 Q Q « Revised O ctober SEMICONDUCTOR T M V320 8-Bit Registered Bus Transceiver General Description Features T h e V320 is an 8-bit universal bus tra n sce ive r designed for high speed interfacing with th e VM E320 backplane. It has

EAF 801

Abstract: eaf801 RG2 DIODE diode rg2 diode UF DC PICO Ace 25 UG DIODE 62 diode TELEFUNKEN e tube 801
Contextual Info: Netzröhre fOr GW-Heizung indirekt geheizt Parallel- oder Serienspeisung T I E E I L EAF 801 E E I I kl V E kl E r l l l l l l E I I ¡,d S Ä « i Refl,bar# HF- und ZF-Penf0,# mit D,ode connected in parallel or series Remote cutoff RF/IF-pentode with diode

Contextual Info: PJSD03TS~PJSD36TS SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS 3~36 Volts VOLTAGE 120 Watts POWER • 120 Watts peak pules power tp=8/20 s • Small package for use in portable electronics • Suitable replacement for MLV’S in ESD protection applications