DIODE K IV Search Results

diode ja8

Contextual Info: ESJA88 6kv, 8 k V K * J E S a y - i* - K • «•»■ + * : Outline Drawings HIGH VOLTAGE SILICON DIODE s * iiW t t # ii* - ^ K s * E K * * - f* - K T T o E S JA 8 8 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa

saia

Abstract: ESJA98 ESJA98-06 ESJA98-08
Contextual Info: E S J 9 A 8 6 k v , 8 k v t K ± ' i Kw i 3? ' f k •W B'+sS : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJA98I*, fcl ESJA98 is high reliability resin molded type high seepd hig voltage diode in small size package which is sealed multilayed mesa type silicon chip by epoxy resin.

Contextual Info: P D -9.1648 International ÏQ R Rectifier IRF7524D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a or 33 K a err HP K

Contextual Info: v a -y K yom Schottky Barrier Diode Twin Diode M$W vh'ÆH OUTLINE DIMENSIONS SF10SC4R 4 0 V 10A • T j 150TC • P rrsm SI •» S B Œ 2 K V S IŒ •S R g à • D C /D C Z IV A '-Î? y - A . 0A«Ë§ • a n , K -5 > v > \;w m • Æ tëH RATINGS •ÎÈ fc liS ^ ïE lfë

Contextual Info: Hot Pluggable X9522 Preliminary Information Laser Diode Control for Fiber Optic Modules Triple DCP, Dual Voltage Monitors FEATURES DESCRIPTION • Three Digitally Controlled Potentiometers DCPs —64 Tap - 10 kΩ —100 Tap - 10 kΩ —256 Tap - 100 kΩ

smd code marking A8 diode

Abstract: smd diode A8 smd diode code a8
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D049 BAP50-03 General purpose PIN diode Product specification Supersedes data of 1999 Feb 01 1999 May 10 Philips Semiconductors Product specification General purpose PIN diode BAP50-03 FEATURES PINNING • Low diode capacitance

Contextual Info: î / a y h * - A'UT7S H 'Î-K —KïS'n.— i> Diode Module Schottky Barrier Diode OUTLINE DIMENSIONS D180SC4M 40 V 180 A Ib J u - l • À ü ï i ' i - ll> • f f iV F •e jc ô '/jv ïïu F I •* § k S R S ;H •D C /D C 0 ^ M o y t ^ iL — S' •

Contextual Info: y3y h * A ' U K K iv a - J I/ Schottky Barrier Diode Diode Module OUTLINE DIMENSIONS D360SC7M Case : Modules 70V 360A • ^ s a ty a - jL / • ffiVF • e jc w s u •* S R S S •D C /D C • I C x T . Î '- RATINGS • Îë ftlI^ Ü Ë fë m A bso lu te M axim um Ratings

Contextual Info: □ -□ 7 . V'CX-Y- Super Fast Recovery Diode Twin Diode O UTLINE D IM E N S IO N S SF10LC20U 200V 10A m y 't 'X >trr35ns > 7 ,llÆ -,lb K >$ÈjfIÎJ±2kVffilI >SRSÜ >^BsOAw0, ^ K H s . FA RATINGS T c = 25°C Absolute Maximum Ratings a i 5 E -fSymbol Conditions

Philips diode

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D119 BAQ800 AM PIN diode Product specification File under Discrete Semiconductors, SC01 1997 Aug 26 Philips Semiconductors Product specification AM PIN diode BAQ800 FEATURES DESCRIPTION • Glass passivated

marking JC diode

Abstract: SG20JC6M diode ir01
Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE SG20JC6M 60V 20A Feature • T j= i5 r c • Tj=150°C • T7JIÆ-JI/ K • Full M olded • lR = 0 .1 m A • Low lR=0.1mA • Resistance for thermal run-away •« » W Œ 2 k V S S I • Dielectric Strength 2kV

35Z diode

Abstract: 36z diode 36-Z KV1530 KV1560N kv1560 KV1562M 36z variable capacitance diode
Contextual Info: TOKO AMERICA 17E INC 43 TOKO D INI K V 1 2 3 0 Z K V 1 2 3 6 Z K V 1 2 3 5 Z K V 1 2 3 4 Z K V 1 2 6 0 K V 1 2 6 0 -2 «?- K V 15 60 KV1562M KV1560N Description This variable capacitance diode is well-suited for use in all types of V F O and V C O , as well as radio cassettes, stereos,

Contextual Info: î —KïS'n.— i> Diode Module / a y h * - A 'U T 7 S H ' Î - K Schottky Barrier Diode OUTLINE DIMENSIONS D 1 2 S C 6 M 60 V 120 A Ib J u - l • À ï i ' i - ll> ü • f f iV F • e jc ô '/ jv ï ï u F I •* § k S R S ;H •D C /D C 0 ^ M o y t ^ i L — S'

Contextual Info: Hot Pluggable X9523 Preliminary Information Laser Diode Control for Fiber Optic Modules Dual DCP, POR, Dual Voltage Monitors FEATURES DESCRIPTION • Two Digitally Controlled Potentiometers DCPs —100 Tap - 10 kΩ —256 Tap - 100 kΩ —Nonvolatile —Write Protect Function

10SC4

Contextual Info: Schottky Barrier Diode Twin Diode l ^ t l l OUTLINE Package : E-pack DE10SC4 Unit: mm Weight 0.326tf Typ 4 0 V 10 A Feature G6 • SM D • SMD • P rrsm 7 ' K 5 > î / x (SSE • Prrsm Rating Type wo I H igh lo R a tin g -S m a ll-P K G 10SC4 p -/Hü»XM

Contextual Info: a n g x / w * taunting Device V O M Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS DF25SC6M Case : STO-220 6QV 25A 1 1 1 •SM D • T jl5 0 1 C • P rrsm T 'K ^ V ì - 'i S E •SR SS • D C / D C = l> K - £ •m m . y - A . o a h ì§ •M . RATINGS

904nm laser diode

Contextual Info: LASER DIODE INC 15E D I 5302^35 OooG4b3 1 | K .A 5 £ j ^ > LD-60F SERIES LD-160F SERIES DIODE LASER DIODE, INC. T -m -o i SINGLE HETEROJUNCTION LASER DIODES WITH FIBER PIGTAILS FEATURES Uniform Intensity Source ► Up to 75 Watts of Peak O ptical Power O utput

1SS135

Contextual Info: $ -f — K /D io d es 1SS135 1S S 135 '>U = ] > x 7 Silicon Epitaxial Planar Band Switching Mini-Diode K • W K s tiilll/ D im e n s io n s U n it : mm 2) 3) ifS/hS (DO-34) 5« -7-.— 4ASH 4) * ' 7 ^ - > - ; U T f S I S * T * - 5 <, • Features ^• A V tM iV S ' V A y r - r V

660 tg diode

Contextual Info: Schottky Barrier Diode Twin Diode W tm OUTLINE P ackage : FTO-220 SF20SC4 Unit-mm Weight 1.9g Typ (W 40V 20A 4.5 Feature • Tj=150°C • Tj=150°C • PRR SM T ’A ' i ^ V Î ' I ' K i E • P • 71 [ Æ - J U K • Full Molded • l Ë S I f f i 2 kV S Ï I

Contextual Info: i / 3 y h * - JVJT S H 'Î-K —K ïS'n.—JU Diode Module Schottky Barrier Diode OUTLINE DIMENSIONS D360SC6M 60V 360A l> US V f ► s jc ô '/ jv ^ u > *§ k S R S Ü »DC/DC H C x T .^ Ü f ê É I l f i : « * r s t f i < f i ÿ v>) RATINGS a Item s Absolute Maximum Ratings

Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE SG 20TC1OM 100V 20A Feature • • • • • • T j= i5 r c • 7 J IÆ -J U K • (S lR = 3 0 p A • j r iiìè s b c u c < u •« » W Œ 2 k V S S I Tj=150°C Full Molded Low lR=30pA Resistance for thermal run-away

5d3 diode

Abstract: sanyo laser
Contextual Info: ENGINEERING SPECIFICATIONS *' TOTTORI SANYO ELECTRONIC 5 - S I * . E LE CTRI C CO. LTD DEVICE DIVISION I i d l k i * T ii t t » i i" S k i. 880 i - C i i lip ib Date^ January 9, 1989 LASER DIODE TTyjpe : SDL-6032-10 1 * verified and distributed by Electronic Device D ivision, T o tto ri Sanyo

6N13S

Contextual Info: MARKTECH INTERNATIONAL lfiE D • STTTbSS OQQGSlt 4 HIGH SPEED COUPLER 6N13S, 6N136 INFRARED LED* PHOTO IC The 6N135 and 6N136 consist| off a j high [emitting, diode and a one chip photo diode-translstor. Each unit Is an 8-lead DIP package. APPLICATIONS — K—

2050I

Abstract: 1fp3
Contextual Info: Single Diode M1FP3 Schottky Barrier Diode mtmm o u t l i n e ft y - K v - ? 30V 1.29A Cathode m ark _ [P 6 N Feature • /JvgySMD Small SMD Ultra-Low V f= 0.4 V • Î b ÎS V f=0.4V IV I x D .y h ïa ^ - (« T ype No. Dale code Main Use • DCth^ORffl