DIODE K IV Search Results

diode ja8

Contextual Info: ESJA88 6kv, 8 k V K * J E S a y - i* - K • «•»■ + * : Outline Drawings HIGH VOLTAGE SILICON DIODE s * iiW t t # ii* - ^ K s * E K * * - f* - K T T o E S JA 8 8 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa

saia

Abstract: ESJA98 ESJA98-06 ESJA98-08
Contextual Info: E S J 9 A 8 6 k v , 8 k v t K ± ' i Kw i 3? ' f k •W B'+sS : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJA98I*, fcl ESJA98 is high reliability resin molded type high seepd hig voltage diode in small size package which is sealed multilayed mesa type silicon chip by epoxy resin.

LT 2806

Abstract: trr M7 diode dc m7 pnp 855 1SS123 JT MARKING 1SS12
Contextual Info: z r — •$? • y — h NEC X " f y 3- > 'J $'<4 K Switching Diode 1SS123 w .n & M x t ° ^ = ¥ v 7 7; u i i v f; = i > ^ 7 ; u ^ y ^ - - k w & T s 'iv + y v m Silicon Epitaxial Double Diode (Series Connected) High Speed Switching W& / PACKAGE DIMENSIONS

Contextual Info: v a -y V J 7 & 4 * - K 7 Schottky Barrier Diode 1 Twin Diode OUTLINE DIMENSIONS D5SC4MR C ase : ITO -220 40V 5A • T jl5 0 t! • P rrsm 7 G V ' > i S i K • 7 J IÆ -J U K •S R S S •D C /D C D > K -^ • * Æ , V - h . OAtSÜ m •aa. • Æ fê g l

Contextual Info: P D -9.1648 International ÏQ R Rectifier IRF7524D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a or 33 K a err HP K

ESJA92

Abstract: ESJA92-10 T151 high voltage diode 100 kv esja 212es 12KV 2ma
Contextual Info: ESJ A92 1 O k v , 1 2 k V : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJA92i±p ESJA92 is high reliability resin molded type high speed high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. : Features

Contextual Info: v a -y K yom Schottky Barrier Diode Twin Diode M$W vh'ÆH OUTLINE DIMENSIONS SF10SC4R 4 0 V 10A • T j 150TC • P rrsm SI •» S B Œ 2 K V S IŒ •S R g à • D C /D C Z IV A '-Î? y - A . 0A«Ë§ • a n , K -5 > v > \;w m • Æ tëH RATINGS •ÎÈ fc liS ^ ïE lfë

Contextual Info: Hot Pluggable X9522 Preliminary Information Laser Diode Control for Fiber Optic Modules Triple DCP, Dual Voltage Monitors FEATURES DESCRIPTION • Three Digitally Controlled Potentiometers DCPs —64 Tap - 10 kΩ —100 Tap - 10 kΩ —256 Tap - 100 kΩ

X9522

Abstract: X9522B20I-A X9522B20I-B
Contextual Info: Hot Pluggable X9522 Preliminary Information Laser Diode Control for Fiber Optic Modules Triple DCP, Dual Voltage Monitors FEATURES DESCRIPTION • Three Digitally Controlled Potentiometers DCPs —64 Tap - 10 kΩ —100 Tap - 10 kΩ —256 Tap - 100 kΩ

smd code marking A8 diode

Abstract: smd diode A8 smd diode code a8
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D049 BAP50-03 General purpose PIN diode Product specification Supersedes data of 1999 Feb 01 1999 May 10 Philips Semiconductors Product specification General purpose PIN diode BAP50-03 FEATURES PINNING • Low diode capacitance

Contextual Info: î / a y h * - A'UT7S H 'Î-K —KïS'n.— i> Diode Module Schottky Barrier Diode OUTLINE DIMENSIONS D180SC4M 40 V 180 A Ib J u - l • À ü ï i ' i - ll> • f f iV F •e jc ô '/jv ïïu F I •* § k S R S ;H •D C /D C 0 ^ M o y t ^ iL — S' •

Contextual Info: y3y h * A ' U K K iv a - J I/ Schottky Barrier Diode Diode Module OUTLINE DIMENSIONS D360SC7M Case : Modules 70V 360A • ^ s a ty a - jL / • ffiVF • e jc w s u •* S R S S •D C /D C • I C x T . Î '- RATINGS • Îë ftlI^ Ü Ë fë m A bso lu te M axim um Ratings

PG151S15

Abstract: pg151s15i8a SX 115C diode FAG 50 LT6 diode
Contextual Info: P G 1 5 1 S 1 5 s a U K B - m I Outline Drawings K FAST RECOVERY DIODE u : Features i JEDEC • S S iiiT V , EIAJ Damper diode for high definition TV and high resolution display. 7C Connection Diagram Insulated package by fully molding. High reliability by planer design.

SMD DIODE gp 817

Abstract: BA592 PHILIPS DIODE smd marking A1 BP317 1/GP-045
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D049 BA592 Band-switching diode Preliminary specification File under Discrete Semiconductors, SC01 1998 May 07 Philips Semiconductors Preliminary specification Band-switching diode BA592 FEATURES , PINNING SOD323

Philips diode

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D119 BAQ800 AM PIN diode Product specification File under Discrete Semiconductors, SC01 1997 Aug 26 Philips Semiconductors Product specification AM PIN diode BAQ800 FEATURES DESCRIPTION • Glass passivated

Contextual Info: V 3 7 h* 4 r M U T7 # * fs j" — K Schottky Barrier Diode Sf-l1:+— K ï ÿ i - J l / Diode Module OUTLINE DIMENSIONS D360SC6M C a s e : M odules 60V 360A © © 4 |i • f f iV F • e jc iw s u • * S R B ü • D C /D C Z i y H - 9 • IC x T .^ -

ESJC01-12B

Abstract: uef 160 HIGH VOLTAGE DIODE 12kv 350ma ESJC01 ESJC01-09B
Contextual Info: ESJC01 9 k V , 1 2 k V s ± ' J ' i i i i r<i i - K ¡6JES3lE$r' ' i =t—K • fl-JK'+ ji : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJC01 li , * t t W # « s * S ! * ) IS iE - ^ K M » C E S iilt i, 'f ! j - K T t o ESJC01 is high reliability and high current capability type

U151

Contextual Info: ERC81 -004 2.6A '> 3 - f * ± 'J K : Outline Drawings K SCHOTTKY BARRIER DIODE : Features •te v F IÄ7F : M arking Low VF * 7 - 3 - K : *l Super high speed switching. Color code : S ilver ttjS S S Abridged type name High reliability by planer design s yj

marking JC diode

Abstract: SG20JC6M diode ir01
Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE SG20JC6M 60V 20A Feature • T j= i5 r c • Tj=150°C • T7JIÆ-JI/ K • Full M olded • lR = 0 .1 m A • Low lR=0.1mA • Resistance for thermal run-away •« » W Œ 2 k V S S I • Dielectric Strength 2kV

ESC021M-15

Abstract: T151 T760 T930 t1511 A5-51
Contextual Info: E S C 021M -15 sa i— K Outline Drawings FAST RECOVERY DIODE Features Dam per diode for high definition TV and high resolution display. Dam per and m odulater diode are jointed in a body. Insulated package by fully molding. m m m & m Connection Diagram

35Z diode

Abstract: 36z diode 36-Z KV1530 KV1560N kv1560 KV1562M 36z variable capacitance diode
Contextual Info: TOKO AMERICA 17E INC 43 TOKO D INI K V 1 2 3 0 Z K V 1 2 3 6 Z K V 1 2 3 5 Z K V 1 2 3 4 Z K V 1 2 6 0 K V 1 2 6 0 -2 «?- K V 15 60 KV1562M KV1560N Description This variable capacitance diode is well-suited for use in all types of V F O and V C O , as well as radio cassettes, stereos,

ERBI2-04

Abstract: ERB12 T810
Contextual Info: ERB 12 1 .OA Outline Drawings f * - K _ GENERAL USE RECTIFIER DIODE Features • 'J tM K ft Compact size, light weight • A ftS Itt High reliability Applications General purpose rectifier applications ^7 -3 -K Color code E R B I2-0I : White a ERB 12 - 02 ; Orange

Contextual Info: î —KïS'n.— i> Diode Module / a y h * - A 'U T 7 S H ' Î - K Schottky Barrier Diode OUTLINE DIMENSIONS D 1 2 S C 6 M 60 V 120 A Ib J u - l • À ï i ' i - ll> ü • f f iV F • e jc ô '/ jv ï ï u F I •* § k S R S ;H •D C /D C 0 ^ M o y t ^ i L — S'

Contextual Info: Hot Pluggable X9523 Preliminary Information Laser Diode Control for Fiber Optic Modules Dual DCP, POR, Dual Voltage Monitors FEATURES DESCRIPTION • Two Digitally Controlled Potentiometers DCPs —100 Tap - 10 kΩ —256 Tap - 100 kΩ —Nonvolatile —Write Protect Function