DIODE JS 8 Search Results

diode MARKING CODE jx

Abstract: sot23 marking JR marking mh sot-23 BAS21LT1G sot-23 MARKING CODE JS 88a diode SOT-23 code marking mf
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE

Contextual Info: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel

BAS19

Abstract: BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol

DIODE UF marking code

Abstract: marking code js DIODE JS marking code js sod323 diode marking code js sod323 BAS20HT1
Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage BAS20HT1 Switching Diode 1 • Device Marking: JS 1 CATHODE 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 MARKING DIAGRAM ORDERING INFORMATION Device Package Shipping BAS20HT1 SOD–323 3000/Tape & Reel JS M Preferred: devices are recommended choices for future use and best overall value.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAS21/A/C/SLT1 SOT—23 SWITCHING DIODE FEATURES BAS21LT1 Marking: JS BAS21ALT1 Marking: JS2 Reverse breakdown voltage Reverse voltage Forward Diode leakage current voltage

Contextual Info: BAS21HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc Peak Forward Surge Current

Contextual Info: BAS20HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc Peak Forward Surge Current

BAS21HT1

Contextual Info: BAS21HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc 625 mAdc Max Unit 200

RD10JS

Abstract: RD11JS RD12JS RD13JS RD15JS RD16JS RD39JS 2JS marking NEC RD4.7JS RD5.1JS
Contextual Info: DATA SHEET ZENER DIODES RD4.7JS to RD39JS DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode DESCRIPTION NEC Type RD [ ] JS series are DHD Double Heatsink Diode construction Mini Package (DO-34; Body length 2.4 mm Max.) possessing

smd diode a7

Abstract: schottky diode marking A7 diode marking H2 5011s smd marking 5G smd marking a7 DF30PC3M marking A7 diode SHINDENGEN DIODE A7 diode smd
Contextual Info: Schottky Barrier Diode Twin Diode mm DF30PC3M OUTLINE 30V 30A Feature • SMD • SMD • Ultra-Low Vf=0.4V • High lo Rating-Small-RKG • î 3 V f=0.4V M ain Use • K'.yxU-jS?8Bfi± • Reverse connect protection for DC power source • DC OR-output

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1G FETURE • We declare that the material of product 3 compliance with RoHS requirements. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS21LT1G JS 3000/Tape&Reel LBAS21LT3G

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1G FEATURE • We declare that the material of product 3 compliance with RoHS requirements. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS21LT1G JS 3000/Tape&Reel LBAS21LT3G

a548

Abstract: ESC011M-15 T151 T460 T760 T930
Contextual Info: E S C 1 1 M - 1 5 5 A IW K ’+ jS I Outline Drawings 5 .5 * ° 3 FAST RECOVERY DIODE 5 .5 * ° 3 <t>3.2 3.5 • f t « : Features • KiftttTv, Dam per diode fo r high d e finition TV and 0.6 high resolution display. •9 —YO>&kit Dam per and m odulater diode are jointed

Contextual Info: GEC PL E SSEY w , S E M I C O N D U C T O R S DS4412-1.2 DSF8035SK FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS 3500V RRM 335A ¡F AV 3500A ' fsm v • Snubber Diode For GTO Applications. 400(iC 4.0|JS Q r FEATURES ■ Double side cooling. ■ High surge capability.

IOR 451

Contextual Info: P D -91777 International 3BR Rectifier IRG4PH20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT V CES = 1200V • High short circuit rating optimized for motor control, tsc =10 js, V Cc = 720V , T j = 125°C,

esja

Abstract: GGT DIODE ESJA83 ESJA83-16 ESJA83-18 ESJA83-20 T151 T760 R930 diode 18kv
Contextual Info: ESJA83d 6 k V , 1 8 k V , 2 0 k V #JS E 4l3lt^^f3j-— K : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJA83&, S » f f * t t « I B * - A 'K f f i * E S 3 l t ^ * - K T T o ESJA83 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa

Contextual Info: ¡Ü H Ü X / N '- I' X „ _ - , lounting Device Surface Mounting . Super F ast Recovery Diode Single Diode OUTLINE DIMENSIONS D2FL40 400V 1.3A •^ Jv ä JS M D • trr5 0 n s ffl Ì É •S R B S •D C / D C Z\y>K.—S> • 7U - r p . 'O b • m m . OA. m m

ERG75

Abstract: H150 T810 T930 EB4P
Contextual Info: ERG75 45A JS S S a fc ^ - f * - K : O u tlin e D r a w in g s FAST RECOVERY DIODE M f t - R • F e a tu re s : t — Pl aner chip • V 7 Y i)1j '<1)— Soft recovery type • Stud mounted : Applications • Switching power supplies Free-wheel diode •

D634

Contextual Info: Bulletin 12065/A International SRectifier SD253N/R SERIES Stud Version FAST RECOVERY DIODES Features • High power FAST recovery diode series ■ 1.5 to 2.0 |js recovery time ■ High voltage ratings up to 1600V ■ High current capability ■ Optimized turn on and turn off characteristics

Contextual Info: 3 Phase Bridge Diode Diode Module • O U T L IN E D IM E N S IO N S S20VTD/S20VTAD 8 0 0 V 2 0 A * , M l : A W 3 < fin o li 'J - K jS -7 - llM A X X «.6 T ' t . ^ S20VTA type has solid wire lead terminals. (11MAXX^1.6) ■ RATINGS A b s o lu te Maximum R atin g s

transistor C388

Abstract: transistor C383 C388 transistor D02017
Contextual Info: P D - 9.1144 International îor!Rectifier IRGPC20MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V c e s = 600V Short circuit rated -10 JS @ 125°C, V qe = 15V Switching-loss rating includes all "tail" losses

Contextual Info: DAN401 /DAN601 /DAN801 /DAN803/DAN403 DAP401 /DAP601 /DAP801 /DAP803 K /D iod es DAN401 /DAN601 /DAN801 /DAN803/DAN403 DAP401 /DAP601 /DAP801 /DAP803 v V =i > 1 $ 3- V T ; u7 °U - j- M M & JS* < "J 3- > ? 2 '< * - KT7 K Silicon Epitaxial Planar Ultra-High Speed Switching Diode Arrays

C956

Abstract: 600V 25A Ultrafast Diode IRGPC50KD2 C955 c959 E30j C958 27e transistor transistor c954
Contextual Info: P D - 9.1123 International [ïë§Rectifier IRGPC50KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 600V •S h o rt circuit rated - 10 |js @125°C, Vg e = 15V • Switching-loss rating includes all "tail" losses

D5S4M

Contextual Info: 2 /a v h + - K U 7 S W - I * Schottky Barrier Diode Single Diode OUTLINE DIMENSIONS D5S4M 40V 5A >Tjl50°C P rrsm 7 7 V 'J i ffiiE > 7 , llÆ - , lb K > S R S ;H > D C / D C n : y A '- ^ O A H tg I jS f e s Ttt— RATINGS Absolute Maximum Ratings a Storage Temperature