DIODE JS 8 Search Results

BAS19

Abstract: BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol

DIODE UF marking code

Abstract: marking code js DIODE JS marking code js sod323 diode marking code js sod323 BAS20HT1
Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage BAS20HT1 Switching Diode 1 • Device Marking: JS 1 CATHODE 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 MARKING DIAGRAM ORDERING INFORMATION Device Package Shipping BAS20HT1 SOD–323 3000/Tape & Reel JS M Preferred: devices are recommended choices for future use and best overall value.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAS21/A/C/SLT1 SOT—23 SWITCHING DIODE FEATURES BAS21LT1 Marking: JS BAS21ALT1 Marking: JS2 Reverse breakdown voltage Reverse voltage Forward Diode leakage current voltage

Contextual Info: BAS21HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc Peak Forward Surge Current

Contextual Info: BAS20HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc Peak Forward Surge Current

BAS21HT1

Contextual Info: BAS21HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc 625 mAdc Max Unit 200

Contextual Info: Bulletin 12094/A International @ör]Rectifier SD233N/R SERIES FAST RECOVERY DIODES Stud Version Features • High pow er FAST recovery diode series ■ 4.5 |js recovery tim e ■ High voltage ratings up to 4500V ■ High current ca p a bility ■ O ptim ized turn on and turn o ft ch a ra cte ristics

IRG4BC10KD

Contextual Info: PD -91 73 4A International IO R R e c tifi ST IRG4BC10KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • High sh o rt circu it rating op tim ize d fo r m otor control, tsC = 1 0 js, @ 3 6 0 V V CE (start , T j = 125°C,

DIODE JS

Abstract: jsmk diode Marking code v3 KT60 VDE 0435 time relay JS relay E56140 LR35579 C150 JS diode
Contextual Info: POWER RELAY 1 POLE— 8 A MEDIUM LOAD CONTROL JS SERIES RoHS compliant n FEATURES UL, CSA, VDE, SEV, SEMKO, FIMKO, ÖVE, BSI recognized UL class B (130°C) insulation l 1 form A (SPST-NO) or 1 form C (SPDT) contact l Low profile and space saving—Height: 12.5 mm

IT5 rectifier

Abstract: snubber international rectifier GTO
Contextual Info: Bulletin 12069 rev. A 09/94 International i ö r Rectifier SD803C.C FAST RECOVERY DIODES s e r ie s Hockey Puk Version Features • High power FAST recovery diode series ■ 1.0 to 1.5 |is recovery tim e ■ High voltage ratings up to 1600V 845A ■ High current ca pability

Contextual Info: SKiiP 24ACC12T4V10 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 - 6 Tj = 25 °C VCES IC Tj = 150 °C IC MiniSKiiP 2 Tj = 175 °C ICRM VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj Typical Applications* 29 A 41 A Ts = 70 °C 34 A 25 A 75 A

Contextual Info: SKiiP 11ACC12T4V10 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 - 6 Tj = 25 °C VCES IC Tj = 150 °C IC MiniSKiiP 1 Tj = 175 °C ICRM VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj Typical Applications* 6 A 6 A Ts = 70 °C 6 A 4 A 12 A -20 . 20

Contextual Info: SKiiP 12ACC12T4V10 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 - 6 Tj = 25 °C VCES IC Tj = 150 °C IC MiniSKiiP 1 Tj = 175 °C ICRM VGES VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj Typical Applications* 12 A 12 A Ts = 70 °C 12 A 8 A 24

Contextual Info: SK 35 GAR 12T4 Absolute Maximum Ratings Symbol Conditions Values Unit Chopper IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM SEMITOP 2 IGBT module SK 35 GAR 12T4 VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V

Contextual Info: SKiM609GAR12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Ts = 25 °C 748 A Ts = 70 °C 608 A 600 A ICnom ICRM SKiM 93 Trench IGBT Modules SKiM609GAR12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V

Contextual Info: SKiM609GAR12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Ts = 25 °C 748 A Ts = 70 °C 608 A 600 A ICnom ICRM SKiM 93 Trench IGBT Modules SKiM609GAR12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V

Contextual Info: SKiM301MLI12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Ts = 25 °C 312 A Ts = 70 °C 252 A 300 A ICnom ICRM VGES SKiM 4 tpsc Trench IGBT Modules SKiM301MLI12E4 Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V

7n99

Abstract: semikron skim DIODE JS 8
Contextual Info: SKiM 400GD063D Absolute Maximum Ratings Symbol Conditions IGBT   A   C 0"2  SKiM 5 Values Units #-6 - 0+)-2 46- 0#6-2 B ) 6- 555 D /8- 0/)82  (  ? ? )8-  +F- 0)#-2 46- 0#6-2 ( ( 6+- ( $5   "  ( /  5 Inverse diode

skim270gd176d

Contextual Info: SKiM 270GD176D power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT "* " "89 ):* < $ & % SKiM 5 SKiM 270GD176D

pj 67 diode

Abstract: dvr circuit diagram T408F T290F js 1200
Contextual Info: European PowerSem iconductor and Electronics Company Marketing Information TT 200 F 35 '¡ A S LO a ' CO 2 8,5 -►*+-1 ^ -n \li 5 1 I ^ — 4 - - 4 AK ! ° 6 K K1 G1 K2 G2 VWK Okt. 1996 TT 200 F, TD 200 F, DT 200 E le k t r is c h e E ig e n s c h a f te n

Contextual Info: Preliminary Data Sheet 12146 02/98 QUIETIR Series In te rn a tio n a l iö R Rectifier io e t f . FAST SOFT RECOVERY RECTIFIER DIODE VF < 1 33V @ 10A t rr = 80ns VRRM 1000 to 1200V Description/Features The 10ETF. fast soft recovery Q U IE T lR rectifier

Contextual Info: International TOR Rectifier PD -5.048 PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA500TD60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces - 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

R300

Contextual Info: FTR-K1 SERIES POWER RELAY 1 POLE - 8A Medium Load Control JS Series n FEATURES UL class B 130°C coil wire insulation 1 form A (SPST-NO) or 1 form C (SPDT) contact l Low profile and space saving - Height: 12.5 mm - Mounting space: 290 mm2 l High sensitivity in small package

Contextual Info: SKiM 270GD176D Absolute Maximum Ratings Symbol Conditions IGBT "* " "89 ):* < $ & % SKiM 5 SKiM 270GD176D Preliminary Data Features                           !"# $!      "%%  #  &   %