DIODE JS 4 Search Results

BAS19

Abstract: BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol

Contextual Info: GEC PL E SSEY w , S E M I C O N D U C T O R S DS4412-1.2 DSF8035SK FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS 3500V RRM 335A ¡F AV 3500A ' fsm v • Snubber Diode For GTO Applications. 400(iC 4.0|JS Q r FEATURES ■ Double side cooling. ■ High surge capability.

B25DC

Abstract: ir e.78996 B25DS E.78996 scr 78996 diode
Contextual Info: International HÖR]Rectifier , • 4A55452 0ülbSb3 IT T « I N R INTERNATIONAL RECTIFIER bSE B25DC/DA/DS/CS/JS SCR I SCR and DIODE / SCR Power Modules in B- package Features I Glass passivated junctions fo r greater reliability I E lectrically isolated base plate 3500V RMS

IOR 451

Contextual Info: P D -91777 International 3BR Rectifier IRG4PH20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT V CES = 1200V • High short circuit rating optimized for motor control, tsc =10 js, V Cc = 720V , T j = 125°C,

esja

Abstract: GGT DIODE ESJA83 ESJA83-16 ESJA83-18 ESJA83-20 T151 T760 R930 diode 18kv
Contextual Info: ESJA83d 6 k V , 1 8 k V , 2 0 k V #JS E 4l3lt^^f3j-— K : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJA83&, S » f f * t t « I B * - A 'K f f i * E S 3 l t ^ * - K T T o ESJA83 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa

C956

Abstract: 600V 25A Ultrafast Diode IRGPC50KD2 C955 c959 E30j C958 27e transistor transistor c954
Contextual Info: P D - 9.1123 International [ïë§Rectifier IRGPC50KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 600V •S h o rt circuit rated - 10 |js @125°C, Vg e = 15V • Switching-loss rating includes all "tail" losses

D1FM3

Contextual Info: Schottky Barrier Diode Single Diode mtmm D1FM3 o u tlin e 30V 5A Feature 1Small SMD 1Tj=150°C ' Low Vf=0.46V 1Low lR=0.1mA » /jv g y s M D >Tj=150°C • V f=0.46V •filR=0.1mA Main Use • K y j J — jS JÜKilt • DC/DC •m m m îïJ K y z iy • Reverse connect protection for

t 317 transistor

Abstract: bjc 2100 diode um 42A smd diode sm 3c kd smd transistor IOR 451
Contextual Info: PD - 91729 International IÖR Rectifier IRG4ZH71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High sh o rt circu it rating op tim ized fo r m otor control, tsc = 1 0|js, V c c = 7 2 0 V , T j = 125°C,

M3555

Contextual Info: SIEMENS BUZ 100S-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Avalanche-rated • du/di rated Type ^DS BUZ 100S-4 55 V 8A ffDS on Package Ordering Code 0.02 Q. P-DSO-28 C67078-S. . . . -A. Maximum Ratings Parameter

transistor buz 19

Abstract: diode zd 12 diode zd 22 JS 8 diode
Contextual Info: SIEMENS BUZ 104SL-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • d v/d t rated Type ^DS b f f DS on Package Ordering Code BUZ 104SL-4 55 V 3.2 A 0.125 Q P-DSO-28 C67078-S. . . . . . .

DIODE S4 74

Abstract: s4 74 g1
Contextual Info: SIEMENS BUZ 100SL-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type ^DS BUZ 100SL-4 55 V 7.4 A ffDS on Package Ordering Code 0.023 £1 P-DSO-28 C67078-S. . . . . . .

DIODE S4 41

Abstract: diode zd 22
Contextual Info: SIEMENS BUZ 101SL-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • d v/d t rated Type ^DS BUZ 101SL-4 55 V 4.1 A f f DS on Package Ordering Code 0.075 £1 P-DSO-28 C67078-S. . . . . . .

semikron skiip 24 nab 125 t 12

Contextual Info: SKiiP 35NAB12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC IC MiniSKiiP 3 ICRM VGES Tj IC • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections

semikron skiip 24 nab 125 t 12

Abstract: skiip 24 nab 125 t 12 semikron miniskiip 09 125 miniskiip 29
Contextual Info: SKiiP 23NAB12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC IC MiniSKiiP 2 ICRM VGES Tj IC • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections

24NAB12T4V1

Abstract: skiip nab 125 miniskiip 29 semikron skiip 24 nab 125 t 12
Contextual Info: SKiiP 24NAB12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC IC MiniSKiiP 2 ICRM VGES Tj IC • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections

Contextual Info: Zowie Technology Corporation Silicon Switching Diode Array Lead free product 3 CATHODE 1 ANODE BAW56WG 3 1 2 2 CATHODE SOT-323 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 4.5 Adc Symbol Max. Unit

DIODE S4 62a

Abstract: siemens 230 98 O transistor Buz 11 siemens EC 230 98 diode zd 37
Contextual Info: SIEMENS BUZ 102SL-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type ^DS BUZ 102SL-4 55 V 6.2 A ffDS on Package Ordering Code 0.033 £1 P-DSO-28 C67078-S. . . . . . .

diode T 77

Contextual Info: PD- 91751A International IÖR Rectifier IRG4IBC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ery Low 1.59V v o ta g e drop 2.5kV, 60s insulation voltage 4.8 mm creapage distance to heatsink

smd JSs

Abstract: smd JSs diode
Contextual Info: SK50GB065 B- I JK L$M 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT N$OG BP I JK L$ C$ BP I TJK L$ C$XY IGBT Module SK50GB065 *'-) RSS N KU V B- I WS L$ US V RS V Z JS N BP I TJK L$ TS _- B- I JK L$ RU V B- I WS L$ UW V C$XYI J : C$0%&

Contextual Info: SKiiP 23ACC12T4V10 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 - 6 Tj = 25 °C VCES IC Tj = 150 °C IC MiniSKiiP 2 Tj = 175 °C ICRM VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj Typical Applications* 20 A 24 A Ts = 70 °C 23 A 15 A 45 A

SEMIKRON SKIIP 20 NAC 12

Abstract: SKiiP 11 NAC SEMIKRON SKIIP 20 NAc SKiiP 09 nac 125 semikron skiip 09 125 nf inverter skiip 20 nac 02NAC12T4V1 semikron IGBT skiip 09 semikron skiip nac 12
Contextual Info: SKiiP 02NAC12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC IC MiniSKiiP 0 ICRM VGES Tj IF • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections

Contextual Info: SKiM301MLI07E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 650 V Ts = 25 °C 256 A Ts = 70 °C 202 A 300 A ICnom ICRM VGES SKiM 4 tpsc IGBT Modules SKiM301MLI07E4 Tj ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 650 V

2272 ic

Contextual Info: SKiM 400GD128D Absolute Maximum Ratings Symbol Conditions IGBT  $ $6 8 : ,  SKiM 5 SKiM 400GD128D Preliminary Data Features                 #<         Values Units 1'22 52 ,'"2"72 ,/'29 '2 ; 52 <<< = 1/2 ,1'/1'/

pj 67 diode

Abstract: dvr circuit diagram T408F T290F js 1200
Contextual Info: European PowerSem iconductor and Electronics Company Marketing Information TT 200 F 35 '¡ A S LO a ' CO 2 8,5 -►*+-1 ^ -n \li 5 1 I ^ — 4 - - 4 AK ! ° 6 K K1 G1 K2 G2 VWK Okt. 1996 TT 200 F, TD 200 F, DT 200 E le k t r is c h e E ig e n s c h a f te n