DIODE JS 4 Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel

DIODE UF marking code

Abstract: JS marking diode
Contextual Info: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE BAS21HT1 1 • Device Marking: JS 1 CATHODE 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 MARKING DIAGRAM ORDERINGINFORMATION Device Package Shipping BAS21HT1 SOD–323 3000/Tape & Reel JS Preferred: devices are recommended choices for future use and best overall value.

DIODE UF marking code

Abstract: marking code js DIODE JS marking code js sod323 diode marking code js sod323 BAS20HT1
Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage BAS20HT1 Switching Diode 1 • Device Marking: JS 1 CATHODE 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 MARKING DIAGRAM ORDERING INFORMATION Device Package Shipping BAS20HT1 SOD–323 3000/Tape & Reel JS M Preferred: devices are recommended choices for future use and best overall value.

RD10JS

Abstract: RD11JS RD12JS RD13JS RD15JS RD16JS RD39JS 2JS marking NEC RD4.7JS RD5.1JS
Contextual Info: DATA SHEET ZENER DIODES RD4.7JS to RD39JS DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode DESCRIPTION NEC Type RD [ ] JS series are DHD Double Heatsink Diode construction Mini Package (DO-34; Body length 2.4 mm Max.) possessing

BAS19

Abstract: BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol

DIODE UF marking code

Abstract: marking code js sod323 diode UF 2004
Contextual Info: BAS21HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol VR VRRM IF IFM surge Rating Value Unit Continuous Reverse Voltage 250 Vdc Repetitive Peak Reverse Voltage 250

Contextual Info: BAS21HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc Peak Forward Surge Current

Contextual Info: BAS20HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc Peak Forward Surge Current

BAS21HT1

Contextual Info: BAS21HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc 625 mAdc Max Unit 200

Contextual Info: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G • We declare that the material of product 1 compliance with RoHS requirements. 2 CASE 477, STYLE 1 SOD– 323 ORDERING INFORMATION Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel LBAS21HT3G

Contextual Info: GEC PL E SSEY w , S E M I C O N D U C T O R S DS4412-1.2 DSF8035SK FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS 3500V RRM 335A ¡F AV 3500A ' fsm v • Snubber Diode For GTO Applications. 400(iC 4.0|JS Q r FEATURES ■ Double side cooling. ■ High surge capability.

D 92 M - 02 DIODE

Abstract: JS marking diode c 92 M - 02 DIODE
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF20PC3M PyhfLig- ffl Unit-mm Weight 1.5g(Typ) 10.2 30V 20A Feature • SM D • SMD • î 2 ® V f=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-PKG • iJ 'S = À l; jS î § M 4.7

BA423L

Contextual Info: 5bE D 711002b 00MD117 bT7 M P H I N PHILIPS INTERNATIONAL iI SbE D BA423L T -O T -jS j SILICON AM BAND SWITCHING DIODE FOR SURFACE MOUNTING The BA423L is a switching diode intended fo r band switching in AM radio receivers. This SM diode is a leadless diode in a herm etically sealed SOD-8 O envelope w ith lead/tin plated metal

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1G FETURE • We declare that the material of product 3 compliance with RoHS requirements. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS21LT1G JS 3000/Tape&Reel LBAS21LT3G

ERG75

Abstract: H150 T810 T930 EB4P
Contextual Info: ERG75 45A JS S S a fc ^ - f * - K : O u tlin e D r a w in g s FAST RECOVERY DIODE M f t - R • F e a tu re s : t — Pl aner chip • V 7 Y i)1j '<1)— Soft recovery type • Stud mounted : Applications • Switching power supplies Free-wheel diode •

Contextual Info: International ^Rectifier PD-2.456 HFA70NH60R Ultrafast, Soft Recovery Diode HEXFRED” LUG TERMINAL CATHODE Features Vr = 600V l • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VF = 1.5V Qrr * = 980nC T = 220A/|JS

smd diode a7

Abstract: schottky diode marking A7 diode marking H2 5011s smd marking 5G smd marking a7 DF30PC3M marking A7 diode SHINDENGEN DIODE A7 diode smd
Contextual Info: Schottky Barrier Diode Twin Diode mm DF30PC3M OUTLINE 30V 30A Feature • SMD • SMD • Ultra-Low Vf=0.4V • High lo Rating-Small-RKG • î 3 V f=0.4V M ain Use • K'.yxU-jS?8Bfi± • Reverse connect protection for DC power source • DC OR-output

D5S4M

Contextual Info: 2 /a v h + - K U 7 S W - I * Schottky Barrier Diode Single Diode OUTLINE DIMENSIONS D5S4M 40V 5A >Tjl50°C P rrsm 7 7 V 'J i ffiiE > 7 , llÆ - , lb K > S R S ;H > D C / D C n : y A '- ^ O A H tg I jS f e s Ttt— RATINGS Absolute Maximum Ratings a Storage Temperature

B25DC

Abstract: ir e.78996 B25DS E.78996 scr 78996 diode
Contextual Info: International HÖR]Rectifier , • 4A55452 0ülbSb3 IT T « I N R INTERNATIONAL RECTIFIER bSE B25DC/DA/DS/CS/JS SCR I SCR and DIODE / SCR Power Modules in B- package Features I Glass passivated junctions fo r greater reliability I E lectrically isolated base plate 3500V RMS

IOR 451

Contextual Info: P D -91777 International 3BR Rectifier IRG4PH20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT V CES = 1200V • High short circuit rating optimized for motor control, tsc =10 js, V Cc = 720V , T j = 125°C,

Contextual Info: y a v h 7 Schottky Barrier Diode S Twin Diode MMrtfèm D10SC4M OUTLINE DIMENSIONS C a se : ITO-220 40V 10A • T j 15013 • P rr sm ffl & •S R g • D C / D C H V A '- ^ 0 A * ü •m m . > f - h . • a s , x — s > 7 u m s i •i&Ë&JS^AElfë Absolute Maximum Ratings

esja

Abstract: GGT DIODE ESJA83 ESJA83-16 ESJA83-18 ESJA83-20 T151 T760 R930 diode 18kv
Contextual Info: ESJA83d 6 k V , 1 8 k V , 2 0 k V #JS E 4l3lt^^f3j-— K : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJA83&, S » f f * t t « I B * - A 'K f f i * E S 3 l t ^ * - K T T o ESJA83 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa

Contextual Info: y a 7 K Schottky Barrier Diode ÿ ' - f i — K i v u — vu Diode Module OUTLINE DIMENSIONS D360SC5M Case : Modules 50V 360A ia a •S V f • * S JS R » S •D C /D C • IC x T .^ - Mfcfèm RATINGS •ifeë&tJI^/Ëfë Absolute Maximum Ratings « Item Storage Temperature

Contextual Info: Bulletin 12094/A International @ör]Rectifier SD233N/R SERIES FAST RECOVERY DIODES Stud Version Features • High pow er FAST recovery diode series ■ 4.5 |js recovery tim e ■ High voltage ratings up to 4500V ■ High current ca p a bility ■ O ptim ized turn on and turn o ft ch a ra cte ristics