DIODE J226 Search Results

SE308T

Contextual Info: DATA SHEET NEC LIGHT EMITTING DIODE ELECTRON DEVICE SE308-T GaAs INFRARED EMITTING DIODE -N E P O C SERIES— D ESCRIPTIO N The SE308 is a GaAs Gallium Arsenide Infrared Emitting Diode which is mounted on the lud frames and molded in plastic. On forward bias, it emits a spectrally narrow band of radiation peaking at 940 nm.

DAD 1000

Abstract: NDL3001 2084m LC-1105 J22686 CT-510
Contextual Info: Sì 6^27525 N E C ELECTRONICS INC. DE II b427525 OOOSbD? b 59C 0 5 6 0 7 D T-41-05 LASER DIODE NDL3001 D A D ,V D A PPLICA TIO N AIGaAs DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTION N D L3001 laser diode is developed for D A D Digital Audio Disk , Video Disk optical head and non impact laser printer. The

NEC K 2500

Abstract: DAD 1000 05611 LD1104 NDL3000 laser diode for printer NEC diode J22686 6W7525
Contextual Info: ST a ^ DE|b4E7525 642 6 427525 Nfcv ODDSt.ll fi N E C TENTATIVE SPEC IFIC ATION ELECTRONICS'INC 59C 05611 7 D T-41-05 LASER DIODE ELECTRON DEVICE NDL3000 D A D ,V D APPLICA TIO N AIGaAs DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTION NDL3000 laser diode is developed for DAD Digital Audio Disk , Video Disk optical head and non impact laser printer. The

05641

Abstract: optical head laser cd disk laser diode 780 nm cd NDL3009 J22686
Contextual Info: ~~ ~5T _ 6 4 2 752 5 N E C ELECTRONICS 59C INC 05641 D T -41-05 D eT | t,427SE5 D D 0 S b 4 1 b TENTATIVE SPECIFICATION NEC LASER DIODE ELECTRON DEVICE N DL3009 DAD, VD APPLICATION AIGaAs DOUBLE HETERO STRU CTU RE LA SER DIODE SEP. 7,1984 DESCRIPTIO N NDL300g laser diode is developed for D A D Digital Audio D isk , Video Disk optical head and non impact laser printer.

Contextual Info: ST 6^27525 N E C ELECTRONICS INC. D E j b 4 E 7 S E S OOOSbD? b 59C 0 5 6 0 7 D I T-41-05 LASER DIODE NDL3001 DAD,VD A PPLICA TIO N AIGaAs DOUBLE H ETER O STR U C TU R E LA SER DIODE D E S C R IP T IO N NDL3001 laser diode is developed for D A D Digital Audio Disk , Video Disk optical head and non impact laser printer. The

DIODE Z54

Abstract: Laser microphone NDL3008 nec laser diode J22686
Contextual Info: ST D E |t.4 2 ? S 2 5 6427525 □□□St.3T fl | - N E C~ELECTRONICS INC 59C 05639 T-41-05 D TENTAIVE SPECIFICATIO N NEC LASER DIODE ELECTRON DEVICE NDL3008 DAD,VD APPLICATION AIGaAs D O UBLE HETERO S T R U C T U R E LASER DIODE SEP. 7 ,1 9 8 4 D E S C R IP T IO N

Contextual Info: ST a ^ »E|b4S7SaS 6642 427525 M bv O DDSt.ll N E C fi TENTATIVE S P E C IF IC ATION ELECTRONICS'INC “ 59C 05611 D T-41-05 LASER DIODE NDL3000 E L E C T R O N D E V IC E DAD,VD A PPLICA TIO N AIGaAs DOUBLE H ETERO STRU CTU RE LA SER DIODE D E S C R IP T IO N

NEC zener diode 35 series

Abstract: RD10PB MEC International RD12PB diode zener nec RD18P R039P RD10P RD13P RD15P
Contextual Info: _ PRELIM INARY SPECIFICA TIO N ZENER DIODES RD4.7P —RD39P 1 W POWER MINI MOLD ZENER DIODE NEC Type RD[ ] P Series are Power Mini Mold Package zener diodes possessing an allowable power dissipation of 1 watt. FEATURES OUTLINE DRAWING U n it: mm

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

PS2031

Abstract: NEC ps2031
Contextual Info: N E C ELECTRONICS INC b427525 0 0 2 ^ 5 2 T • 30E D o £3 PHOTO COUPLER PS2031 PHOTO COUPLER High Collector to Emitter Voltage Single Transistor DESCRIPTION The PS2031 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon photo transistor.

226-0005-00100

Abstract: PCIH38M400A1 810E CISPR22 HPS10 P116 Diode J20-24
Contextual Info: 1000-6000 Watts HPS10/12/15 Series Electrical Specs Input Input voltage Frequency Inrush current Efficiency Power factor Turn-on time Special Features • • • • • • • • • • • • • • • • • • • • • • • • • • Integrated OR-ing diode

diode J226

Abstract: PCIH38M400A1 j20 connector 226-0005-00100 EN61000-3-2 HPS10 hps10 transistor MC612N diode j227 positronics
Contextual Info: 1000-6000 Watts HPS10/12/15 Series Electrical Specs Input Input voltage Frequency Inrush current Efficiency Power factor Turn-on time Special Features • • • • • • • • • • • • • • • • • • • • • • • • • • Integrated OR-ing diode

PCIH38M400A1

Abstract: PS3 fan connector diode J226 opamp 741 MC612N MC612N-228 MC612 elcon SERIES 1000 hps10 transistor CISPR22
Contextual Info: 1000-6000 Watts HPS10/12/15 Series Electrical Specs Input Input voltage Frequency Inrush current Efficiency Power factor Turn-on time Special Features • • • • • • • • • • • • • • • • • • • • • • • • • • Integrated OR-ing diode

1581m

Abstract: nec ps2021 PS2021 M5010
Contextual Info: PHOTO CO U PLER PS2021 PHOTO CO U PLER High Isolation Voltage Single Transistor — n epo c s e r ie s - D E S C R IP T IO N The PS2021 is an optically coupled Isolator containing a G aA s light emitting diode and an NPN silicon photo transistor. FEA TU RES

104S14

Contextual Info: _ ~5T 6427525 N E C E L E C T R O N IC S 59C IN C 05641 T-41-05 D t.457SES DD O S b 4 1 b ’ J ” TENTATIVE SPECIFICATION NEC LASER DIODE ELECTRON DEVICE NDL3009 D AD , VD A PPLICA TIO N AIGaAs D O U B LE HETERO S T R U C T U R E L A S E R D IO D E SEP. 7,1984

Contextual Info: N E C E L EC T RO NI C S INC 3QE D • b4E7S2S 0 0 2 ^ 4 0 fl ■ 3 PHOTO COUPLER PS2021 PHOTO C O U P LER High Isolation Voltage Single Transistor — n ep o c s e r ie s — D E S C R IP T IO N The PS2021 is an optically coupled isolator containing a G aAs light emitting diode and an NPN silicon photo transistor.

dl3008

Contextual Info: ST D E |t,4 2 7 S 2 5 6427525 O CD St^ fl | - N E C~ E L E C T R O N I C S INC 59C 05639 T-41-05 D TENTAIVE SPECIFICATION SEC LASER DIODE ELECTRON DEVICE N D L3008 D A D .V D A P P L IC A T IO N A! G a A s D O U B L E H E T E R O S T R U C T U R E L A S E R D IO D E

smd transistor j210

Abstract: ADT4761 smd Variable resistor 10K ohm Variable resistor 10K ohm ADT7461 smd diode j225 2N3906 SMD pin configuration 1K variable resistor Radionics centronics 36 current limits
Contextual Info: Evaluation Board for Temperature Monitor with Series Resistance Cancellation EVAL-ADT7461* FEATURES On-Chip and Remote Temperature Sensor 0.25؇C Resolution/1؇C Accuracy on Remote Channel 1؇C Resolution/3؇C Accuracy on Local Channel Series Resistance Cancellation Automatically Cancels

Contextual Info: SC4524E 28V 2A Step-Down Switching Regulator POWER MANAGEMENT Features Description Wide Input Voltage Range: 3V to 28V 2A Output Current 200kHz to 2MHz Programmable Frequency Precision 1V Feedback Voltage Peak Current-Mode Control Cycle-by-Cycle Current Limiting

Contextual Info: SC4524F 18V 2A Step-Down Switching Regulator POWER MANAGEMENT Features Description Wide Input Voltage Range: 3V to 18V 2A Output Current 200kHz to 2MHz Programmable Frequency Precision 1V Feedback Voltage Peak Current-Mode Control Cycle-by-Cycle Current Limiting

MPD1708

Abstract: D1708AG 708AG UPD1708AG-020 708AG-220 d 708ag lcd 1620-1 m1ta transistor NEC D 882 p LCD Driver Ic 9320
Contextual Info: T' I _ PR ELIM IN A R Y SEC SPECIFICATION M O S D IG ITA L INTEGRATED C IR C U IT S ELECTRON DEVICE ixPD1708AG-020, //PD1708AG-220 P L L F R E Q U E N C Y S Y N T H E S IZ E R A N D C O N T R O L L E R FOR M O B IL E F M / M W / L W R A D IO W IT H C L O C K

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

2SK482

Abstract: TC1617 Field Effect Transistor Silicon N Channel MOS vdss 600
Contextual Info: NEC MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK482 FAST SW ITCHING N-CHANNEL SILICON POWER MOS FET INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS U n it: mm • Suitable fo r switching power supplies, actuater controls, and pulse c ir­ cuits. •

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any