DIODE ITT 15 Search Results

S945

Abstract: photodiode ge CLI890 892m 00010-B
Contextual Info: CLI890 Series Optical Switches G ENERA L D ESCRIPTIO N This optical switch series couples an infrared em it­ ting diode and a m onolithic integrated circuit con­ tain in g a photodiode, low level am plifier, Schm itt trigger and output stage. The Schm itt trigger hys­

HOA0973-P51

Contextual Info: Home> Products > Detector > Optoschmitt Sensor > Product Page HOA0973-P51 Order Product and Get Support U.S. Authorized Distributors HOA Series Infrared Opaque Optoschm itt Sensor, Diode Output, Single Mounting Tab, Detector Side, Plastic Package Global Sales & Service

HOA0973-L51

Abstract: hoa0973l51
Contextual Info: Home> Products > Detector > Optoschmitt Sensor > Product Page HOA0973-L51 Order Product and Get Support U.S. Authorized Distributors HOA Series Infrared Opaque Optoschm itt Sensor, Diode Output, Single Mounting Tab, Em itter Side, Plastic Package Global Sales & Service

Contextual Info: DIGITAL DIODE PHASE SHIFTERS SERIES DP 0.25–5.1 GHz GENERAL INFORMATION SMA FEMALE TYP. ITT CANNON MDB1-9PSP OR EQUIV. KDI/Triangle’s switched line digital phase shifters are controllable by binary logic. If a 360° phase shifter having sixteen discrete steps is

ERBI2-04

Abstract: ERB12 T810
Contextual Info: ERB 12 1 .OA Outline Drawings f * - K _ GENERAL USE RECTIFIER DIODE Features • 'J tM K ft Compact size, light weight • A ftS Itt High reliability Applications General purpose rectifier applications ^7 -3 -K Color code E R B I2-0I : White a ERB 12 - 02 ; Orange

DIODE A112

Abstract: ra8040 ESAD25 SC-65 A114
Contextual Info: ESAD25 C,Nf D ( i s a ) > a a t a t ^ » - K FA ST RECO VERY DIODE 1 4 # ^ : Features ¿v-m otttoM iztf& i' High voltage by mesa design 'ftM Itt High reliability ;C Connection Diagram IffliS l ! Applications ESAD25-DDC ° ESAD25-DGN (Do- ^ ► l -0(3)

M74C14N

Abstract: 74C14M
Contextual Info: O ctober 1987 Revised Ja nuary 1999 S E M IC O N D U C T O R !!^ MM74C14 Hex Schmitt Trigger General Description All inputs are protected from dam age due to static dis­ charge by diode clam ps to Vc c and GND. The M M 74C 14 Hex S chm itt Trigger is a m onolithic com ple­

s6 4a

Abstract: YB311S6
Contextual Info: YB311S6 4A * a a ia t^ s t-K FAST RECOVERY DIODE I Features In sulated pa ckage by fu lly m o ld in g . H ig h vo lta g e by m esa d e s ig n . C onnection D iagram • B fiU itt H igh re lia b ility • f f l i i l ! A p p lica tio n s H ig h speed s w itc h in g ,

Contextual Info: Tem ic TSTA7500 Sem i r o n du< t or s GaAlAs IR Emitting Diode, Hermetically Sealed T 018 Case Description T S T A 7 5 0 0 is a h ig h e f f i c ie n c y in f r a re d e m itt in g d io d e in G a A lA s o n G a A lA s te c h n o lo g y in a h e r m e ti c a ll y s e a le d

Contextual Info: Temic CQY37N Sem i I o nd u c t n r s GaAs Infrared Emitting Diode in Miniature T - 3A Package Description C Q Y 3 7 N is a s ta n d a r d G a A s in f r a re d e m itt in g d io d e in a m i n ia t u r e to p v ie w p la s tic p a c k a g e . Its c l e a r le n s p r o v id e s a h ig h r a d ia n t in te n s ity w ith o u t e x ­

Contextual Info: Temic CQY36N S e m i c o n d u c t o r s GaAs Infrared Emitting Diode in Miniature T -3/» Package Description C Q Y 3 6 N is a s ta n d a r d G a A s in f r a re d e m itt in g d io d e in a m i n ia t u r e to p v ie w p la s tic p a c k a g e . Its f la t w in d o w p r o v id e s a w id e a p e r t u r e m a k in g it id e a l

129 ITT zener

Abstract: ITT DIODE 129 SD5600 SD5200 SD5200N SD5301 SD5301N SD5600N Zener diode itt "Pin compatible" Signetics
Contextual Info: S ig n e tic s Integrated C irc u its-D M O S SD5200 Quad analogue S.P.S.T. driver C O N N E C T IO N D IA G R A M Tem perature range: Industrial 0°C to 8 5° C • • • • • • D rive capability ± 15 V Ultra-fast t j O N 1 ns (max) Isolation (at 3 kH z) — 105 d B (typ)

DIODE ITT 310

Abstract: CM75E3Y-12E CM75E3Y-12 00D7243 75e3y
Contextual Info: CM75E3Y-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Chopper IGBTMOD E-Series Module 75 Amperes/600 Volts Description: CM75E3Y-12E Chopper IGBTMOD™ E-Series Module 75 Amperes/600 Volts Powerex Chopper IG B T M O D ™

2SD1728

Abstract: SC-65
Contextual Info: Power Transistors 2SD1728 2SD1728 Silicon P N P Trip le -D iffu se d Planar Type Package Dim ensions Horizontal Deflection Output Unit-“I mm 15.5max. • Features 13.5max. • Damper diode built-in ll.Omax. 4.7 m a x. 2.1 m a x. • Minimizes external component counts and simplifies circuitry

CM300DY-24E

Abstract: L120A BP107 fjl diode AL6345-25.0.391-00
Contextual Info: b4E D • poüierex 7E T4b 21 0G0b7Sb Obb « P R X inc Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 CM300DY-24E DU3l IG B TMOD

transistor 2S D 716

Abstract: 2SD1439
Contextual Info: Power Transistors 2SD1439 2SD1439 Silicon NPN Triple-Diffused Junction Mesa Type H orizontal D eflection O utput • Features ■ Package Dim ensions Unj t • mm 15 5max. 4.7n;ax. 13 5max. • D am p er diode built-in o lmax. 1 [ 1 l.Omex. ffÊ p P • High breakdow n v o ltag e and high reliability by g la ss p assiv ation

DIODE ITT 310

Abstract: OC70P2 transistor 1p3
Contextual Info: c*o OPTOELECTRONICS |* _ PH O TO TR A N SISTO R O P T IC A L IN T E R R U P T E R S W IT C H ES •Q £ h* .312 7.83 .j (- 1 2 4 (3 151 J-.1P3 ¡2.6) NOM .122(3.10) I T1 C ia p Ù o e r îiii'e Pai s W itt! ' ■/JniU' M u m b i; tm in . ._££>/S e iì a s .,

p8525

Abstract: diode S428 P8526
Contextual Info: Contents Page Page O P TO SCH M ITT D E T E C T O R S INTRODUCTION SD5600/5610. 146 SD5620/5630. 150 SDP8004/8014 . 154

powerex aa 2700

Abstract: IET21205
Contextual Info: POWEREX INC m M a^E D B R E X • 7S=14b21 DG04Ô63 H M P R X Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14

MG15N6ES1

Abstract: MG15N6ES
Contextual Info: GTR MODULL SILICON N CHANNEL IGBT HIGH POWER S W I T C H I N G APP LI C AT IO NS . M OT OR C O NT RO L APPL IC AT I ON S. . The Electrodes are Isolated from Case . 6 IGBTs are Built-in to 1 Package. . Enhancement-Mode. . Low Saturation Voltage : v C E s a t = 5V ( M a x . ) (IC=15A)

Contextual Info: Schottky Barrier Diode Twin Diode mwm o u t lin e DF15J C 10 100 V 15A Feature • SMD ' SM D 1Low lR=0.6mA • f ilR = 0 .6 m A • i» # îê « b c u 1 Resistance for thermal run-away : <U • /Jv3ü*3iES* 1 High lo R ating-Sm all-PK G Main Use • ^ -S P C -L C D ^ -^ ^

ITT DIODE 125

Contextual Info: S ÏÏT Æ 1997 IT T • IN 4bô2711 0üübS7E TMb ■ T E R M E T A L L HAL115 Marking Code Hall Effect Sensor 1C in CMOS technology Temperati.ire Range Type Features: E C - operates from 4.3 to 24 V supply voltage with reverse voltage protection HAL 115UA

10TC15M

Contextual Info: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FT0220G S G 10T C 1 5 M Unit : mm Weight 1.54g Typ 4.5 150 V 10A Feature >Tj=150°C ' Tj=150°C ><SIr=15m A 1 Low Ir=15|jA 1 Resistance for thermal run-away >37JLÆ-JL/ K ' Full Molded L IC < 1 1

D-10

Abstract: D-12 KD221203 transistor E21
Contextual Info: m ß /B s KD221203 x Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U d l D d r lltlC jtO n Transistor Module 30 Amperes/1200 Volts O U T L I N E DRAWING Description: The Powerex Dual Darlington Transistor Modules are high power