DIODE ITT Search Results

SE301A

Abstract: 30mWI
Contextual Info: N E C 30E D ELECTRONICS INC • h42752S 005=^44 fi ■ LIGHT EMITTING DIODE SE301A GaAs INFRARED EM ITTING DIODE INDUSTRIAL USE DESCRIPTION The SE301A is a GaAs Gallium Arsenide Infrared Emitting Diode which is mounted on a TO-18 hermetically sealed header

CBRD

Abstract: IEI-1209
Contextual Info: DATA SHEET NEC LIGHT EMITTING DIODE SE316 L ELECTRON DEVICE G a As INFRARED EMITTING DIODE SE316(L) is a GaAs Infrared Em itting Diode which is mounted on the lead frames and molded in plastic. On forward bias, it emits a spectrally narrow band of radiation peaking at 940 nm.

Contextual Info: NEC LIGHT EM ITTING EifCTROfJ DCVICE DIODE SE302A GaAs INFRARED EM ITTING DIODE INDUSTRIAL USE -N E P O C SERIES - DESCRIPTION The SE302A is a GaAs G allium Arsenide Infrared Lig h t E m ittin g Diode w hich is m ounted on the lead fram e and m olded in

Contextual Info: Galliumarsenidphosphid-Lumineszenzdioden GaAsP Red Light Emitting Diodes Anwendung: Application: Rotleuchtende Diode für allgemeine Anzeigezwecke Red light em itting diode for general indicating purposes Besondere Merkmale: Features: • Kunststoffgehäuse

SE310

Abstract: PH110
Contextual Info: NEC ELECTRONICS INC 3QE D • 1=427525 0 0 2 ‘iû5b M ■ /> T -tl-ll LIGHT EMITTING DIODE SE310 GaAs INFRARED E M IT T IN G DIODE DESCRIPTION The SE310 is a GaAs Gallium Arsenide Infrared Em itting Diode which is mounted on the lead frames and molded in plastic.

T1596

Abstract: 6DE4 I960 r7hr general electric IT-T1596
Contextual Info: 6D E4 6DE4 IT-T1596 Page 1 DIODE TUBES 2 -6 0 FOR TV DAMPING DIODE APPLICATIONS = DESCRIPTION AND RATING = The 6DE4 is a single heater-cathode-type diode designed for use as the damping diode in the horizontal-deflection circuit of television receivers. BASING DIAG RAM

D1N4446

Abstract: 1N4446 ITT diode 150D
Contextual Info: ITT SEfllCOND/ INTERflETA 50E D 4 b ö 5 ? ll 0003017 ÔÔT • ,T 1N4446 IS I ' o> - o q Silicon Epitaxial Planar Diode fast switching diode. r m ax.1.9^ ma x.1.9^ * This diode is also available in glass case DO-34 f C a thode Mark C a tho de M ark m a x .0.42 ?

se3-13

Contextual Info: NEC DATA SHEET SE313 LIGHT EMITTING DIODE ELECTRON DEVICE GaAs INFRARED EMITTING DIODE -N E P O C SERIES— DESCRIPTION The SE313 is a GaAs G allium Arsenide Infrared E m ittin g Diode which is m ounted on the lead frames and molded in plastic. On forward bias, it emits a spectrally narrow band o f radiation peaking at 940 nm.

Contextual Info: DATA SHEET LASER DIODE NDL7001 1 310 nm FIBER OPTIC COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1 310 nm laser diode for fiber optic communications and has a strained Multiple Quantum Well stMQW structure and a built-in InGaAs monitor photo diode.

BAX12

Abstract: 74127
Contextual Info: BAX 12 'W Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Schutzdiode in F ernsprechverm ittlungsanlagen Applications: Protection d io d e in telephone sw itching systems Features: Besondere Merkmale: • C ontrolled avalanche characteristic

Contextual Info: NEC LIG H T EM ITTIN G DIODE a f C T O N DEVICE SR106CA GaAsP LIGHT EM ITTING RED DIODE -N E P O C S E R IE S - DESCRIPTION The SR 106C A is a GaAsP Gallium Arsenide Phosphide Light Emitting Diode which is mounted on the lead frames and molded in clear plastic. It is ideally suited for front panel indicator applications.

1n4448 itt

Abstract: Color code diode DO-35 diode ITT specification 150D 1N4448 diode 1N4448 D1N4448
Contextual Info: ITT S E n i C O N D / INTERPIETA SOE D 4b a a ? n o o o a a a i aoo • is i " r * Q 3 *o °i 1N4448 Silicon Epitaxial Planar Diode fast switching diode. This type in case DO-35 is also available to specification CECC 50.001.023 max. 1.90 This diode is also available in glass case DO-34

BY588

Contextual Info: {[ N AMER P H I L I P S / D I S C R E T E SSE D • ^53131 - Q01t71t 2 BY588 T - û i- ie r BASE-EMITTER EFFICIENCY DIODE Solid-glass passivated rectifier diode in a hermetically sealed axial-leaded glass envelope. T he device is intended fo r use as efficiency diode in horizontal deflection circuits between base and em itter terminals

Contextual Info: DATA SHEET N EC LIGHT EMITTING DIODE SE1103 ELECTRON DEVICE HIGH SPEED INFRARED LIGHT EM ITTIN G DIODE D E SC R IP T IO N The SE1103 is a G a A IA s Infrared Light Emitting Diode which is mounted on the lead frames and molded in plastic. On forward bias, it emits a spectrally narrow band of radiation peaking at 890 nm.

Contextual Info: Optointerrupter Specifications H22A4, H22A5, H22A6 Optointerrupter GaAs Infrared Emitting Diode and NPN Silicon Phototransistor Module with 1mm Aperture The H22A Interrupter M odule is a gallium arsenide infrared em itting diode coupled to a silicon phototransistor in a

22LL

Abstract: H22L2
Contextual Info: Optointerrupter Specifications_ H22L1, H22L2 Optointerrupter GaAs Infrared Emitting Diode and Microprocessor Compatible Schmitt Trigger Module with 1mm Aperture ' M I L L IMETERS i T h e H22L series is a gallium arsenide, in frared em itting diode

RSIG diode

Abstract: TFK 347 P 2347 V139P PF126
Contextual Info: V 138 P • V 139 P Galiiumarsenidphosphid-Lumineszenzdioden GaAsP Red Light Emitting Diodes Anwendung: Rotleuchtende Diode für allgemeine Anzeigezwecke Application: Red light em itting diode for general indicating purposes Besondere Merkmale: Features: • M iniatur-Kunststoffgehäuse

NPN Silicon Phototransistor

Contextual Info: O ptoisolator Specifications H11G1, H11G2 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T h e H U G series consists o f a gallium arsenide, infrared em itting diode coupled with a silicon Darlington-connected

11851

Abstract: MIB51T
Contextual Info: CRO MIB51T INFRARED EM ITTING DIODE 04.98 0.196 DESCRIPTION MIB51T is GaAlAs infrared emitting diode molded in T -l 3/4 standard 5mm diameter clear transparent lens. 8.7 (0.34) 1.0 - 2.54(0.1) ABSOLUTE MAXIMUM RATINGS • • • Forward Current (Continuous)

diode ITT

Abstract: 1n4448 itt 1N4448 LL4448 QQQ317D
Contextual Info: ITT SEMICOND/ INTERMETALL blE D • 4bfl2711 0ÜG31t.ô fibE * I S I LL4448 Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard JEDEC 1N4448 K 3.510.1- Cathode Mark

Contextual Info: O K I electronic components QLD2210_ GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION T he O LD 2210 is a high output GaAIAs infrared light em itting micro-diode sealed with a collimator lens com posed of transparent epoxy resin. FEATURES

BB629

Abstract: ITT Intermetall
Contextual Info: ITT SEP1IC0ND/ INTERMETALL 50E ]> • 4bfi2711 D0D2b5D E4T m i S I 'TOI-lOj BB629 Tuner Diode Silicon Epitaxial Planar Capacitance Diode in MiniMELF case MELF = Metal ELectrodes Face-bonding especially suited for automatic insertion with very high effective capacitance

Contextual Info: Generic Optoisolator Specifications_ GEPS2001 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor M IN . M AX. .040 .090 085 012 203 2 64 INFRARED E M ITTIN G DIODE 9 53 3.43 6 66 2.92 6.10 milliwatts milliamps ampere

1n4148 ITT

Abstract: 4148 itt LL4148 n4148 LL4148 dynamic resistance ITT DIODE LL4148-1 150D 1N4148
Contextual Info: ITT SEMICOND/ INTERMETALL blE J> M Mbfl2711 0003152 4T5 M I S I LL4148 Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard JEDEC 1N4148 I- 3.510.1-r Cathode M ark