H11G2 Search Results

h11g1 case 730c-04

Abstract: H11GX 1N4004 H11G1 H11G2 H11G3 motorola 1n4004
Contextual Info: MOTOROLA Order this document by H11G1/D SEMICONDUCTOR TECHNICAL DATA H11G1 * [CTR = 1000% Min] GlobalOptoisolator H11G2* 6-Pin DIP Optoisolators Darlington Output On-Chip Resistors The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs optically coupled to silicon photodarlington detectors which have integral

H11G2M

Contextual Info: H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Features General Description • High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon

H11G1

Abstract: H11G1SR2M H11G1TM H11G1VM H11G2M H11G3M H11G1M H11G1SM fairchild logic
Contextual Info: H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Features General Description • High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon

h11q

Abstract: H11Q2 H11U
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VDE UL CSA <D ® ® 8ET1 H11G1* H11G2* H11G3 8 EMKO DEMKO NEMKO [CTR • 1000% Min] GlobalOptdsolfttor 6 -Pin DIP Optoisolators Darlington Output On-Chip Resistors The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs

H11GX

Abstract: H11G1 datasheet H11G2 H11G1 H11G3
Contextual Info: HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1 H11G2 H11G3 DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor

H11GX

Abstract: GE H11G1 H11G2 H11G1 IEC204 VDE0113 VDE0160 VDE0832
Contextual Info: MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA H11G1 H11G2 H11G3 6-Pin DIP O ptoisolators Darlington Output . . . consists of gallium -arsenide IREDs optically coupled to silicon photodarlington detec­ tors which have integral base-emitter resistors. The on-chip resistors improve higher

H11G1

Abstract: H11G1M H11G1SM H11G1SR2M H11G1TM H11G1VM H11G2M H11G3M
Contextual Info: H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Features General Description • High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA H11G1 H11G2 H11G3 6-Pin DIP Optoisolators Darlington Output . . . c o n s is ts o f g alliu m -arse n id e IR E D s o p tically co u p led to s ilic o n p ho to darlin g ton d etec­ to rs w h ich h ave integral b ase-em itter resisto rs. T h e on-chip re sisto rs im p ro ve h ig h er

H11G2

Abstract: H11G1 E91231 H11G1X H11G3 Diode smd code sm
Contextual Info: H11G1, H11G2, H11G3 H11G1X HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS UL recognised, File No. E91231 Package Code " JJ " 'X' SPECIFICATIONAPPROVALS H11G1X VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802

Contextual Info: [sO HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS i I -I H11G1 H11G2 PACKAGE DIMENSIONS DESCRIPTION The H11G1 and H 11G 2arethe photodarlington-type optically coupled optoisolators. Both devices have a gallium arsenide infrared em itting diode coupled with a

H11GX

Abstract: H11G1 H11G2 H11G3
Contextual Info: HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1 H11G2 H11G3 DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor

H1163

Abstract: C1709 C1706 MCA11G3 C2083 C2090 H11G1 H11G2 H11G3 MCA11G1
Contextual Info: GENL I N S T R t OPTOELEK 88D aa GENERAL INSTRUMENT 0 2897 DE Ê BôTDlHû 00020^7 D HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS MCA11G1 H11G1 MCA11G2 (H11G2) MCA11G3 (H11G3) PACKAGE DIMENSIONS Æ . hB l iS l r" I 6.86 (.270) 6.35 (.250) 0.36 (.014) I f ¥

H11GX

Abstract: H11G1M H11G1SM H11G1SR2M H11G1TM H11G1VM H11G2M H11G3M
Contextual Info: H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers tm Features General Description • High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon

Contextual Info: 6 LEADED DEVICES continued Resistor Darlington Output Pinout: 1-Anode, 2-Cathode, 3-N.C., 4-Emitter, 5-Collector, 6-Base (Style 1) Current Transfer Ratio (CTR) Device H11G1S,F H11G2S,F H11G3S.F % Min e* If @ mA 1000 1000 200 10 10 1 VCE(sat) VOF Volts Volts

E91231

Abstract: H11G1 H11G1X H11G2 H11G2X H11G3 H11G3X
Contextual Info: H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form Dimensions in mm 2.54 7.0 6.0

H11U

Contextual Info: 02897 D J ^ t t a S l 88D flfl T E C H N O L O G I E S CORP GENERAL INSTRUMENT 0DD2S-Ì7 h ig h v o itag e p h o to p a ru n g to n o p to c o u p le r s MCA11G1 H11G1 M C A 11G 2 (H11G2) M C A 11G 3 (H11G3) DESCRIPTION PACKAGE DIMENSIONS t 6.86 (.270) 8.89 (.350)

Contextual Info: H11G1, H11G2, H11G3 H11G1X HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS z UL recognised, File No. E91231 Package Code " JJ " 'X' SPECIFICATIONAPPROVALS z H11G1X VDE 0884 in 3 available lead form:- STD - G form - SMD approved to CECC 00802

h11g1 case 730c-04

Contextual Info: MOTOROLA SEMICONDUCTOR! TECHNICAL DATA TO Q VD € Ul CSA SETI <§> ® SEMKO DEMKO H11G1* H11G2* H11G3 NEM KO [CTR . 1000% M in] 6-Pin D IP O ptoisolators Darlington Output On-Chip R esistors [CTR = 1000% Min] [CTR * 200% Min] ‘ M otorola P referred

E91231

Abstract: H11G1 H11G1X H11G2 H11G2X H11G3 H11G3X
Contextual Info: H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS VDE 0884 in 2 available lead forms : - STD - G form Dimensions in mm 2.54 7.0 6.0 l

NPN Silicon Phototransistor

Contextual Info: O ptoisolator Specifications H11G1, H11G2 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T h e H U G series consists o f a gallium arsenide, infrared em itting diode coupled with a silicon Darlington-connected

H11G1

Abstract: H11G1X H11G2 H11G2X H11G3 H11G3X E91231
Contextual Info: H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form Dimensions in mm 2.54 7.0 6.0

h11q

Abstract: H11Q1 bvx diode K30H M11G2
Contextual Info: HIGH VOLTAGE PHOTQDARUNGTON OPTOCOUPLERS OPlßELEUHRICS H11G1 H11G2 The H11G1 and M11G2 are the photodarlmgton-type optically coupled oploisoialors. Both devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has

C1708

Abstract: C1707 C1706 C2083 C208-3 H11G1 H11G2
Contextual Info: pT| HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS •ÉBEM Â. OPTOELECTRONICS H11G1 H11G2 PACKAGE DIMENSIONS DESCRIPTION d bÆ Æ The H11G1 and H11G2 are the photodarlington-type optically coupled optoisolators. Both devices have a gallium arsenide infrared emitting diode coupled with a

C2083

Abstract: C1708 ST1603-02 C1706 C1707 H11G1 H11G2
Contextual Info: HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS OPTD E L E t l f l O H I C S H11G1 H11G2 PACKAGE DIMENSIONS db [& DESCRIPTION i & r ~ O 7.62 MAX 0.41 6.35 REF 03 1 0.2 8.3 BEF The H11G1 and H11G2 are the photodarlington-type optically coupled optoisolators. Both devices have a