DIODE IR 132 E 25 Search Results

thyristor t16

Abstract: thyristor t16 400
Contextual Info: se MIKRDN V rsm V rrm dv/ SEMIPACK 2 Thyristor / Diode Modules Itrms (maximum value for continuous operation V drm dt)cr 220 A 250 A 220 A 250 A V V/)iS 148 A 168 A 148 A 168 A SKKT SKKT SKKH SKKH 162/08 D Itav (sin. 180; Tcase = 80 °C) V 500 132/08 D

IRF5303

Abstract: irf530 diode IR 132 E FP133 IRF530-3 IR 126 D 34 FP-13 IRF532 F532 FP132
Contextual Info: IRF530/531/532/533 IRFP130/131/132/133 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower Ros ON Improved inductive ru gg ed ness Fast sw itching tim es Rugged p olysilicon gate cell structure Lower input capacitance Extended safe operating area

10026JN

Abstract: APT10026JN
Contextual Info: O A dvanced P o w er Te c h n o l o g y D r »J APT10026JN ó s ^ ISOTOP* 1000V 33A 0.26H "UL Recognized" File No. E145592 (S POWER MOS ¡V( N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'o W 'lm V GS PD T J 'T STG All Ratings: T c = 25°C u nless otherw ise specified.

IGBT DRIVER SCHEMATIC 3 PHASE

Abstract: IGBT 50 amp 1000 volt 3 phase Rectifier Phase Control IC EHS-24 6 PIN smps control ic bridge rectifier ic pin configuration IR igbt gate driver ic 12 VOLT 150 AMP smps circuit Full bridge SMPS OM9036SF
Contextual Info: OM9036SF OM9037SF FULL BRIDGE, 3 PHASE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 30 And 25 Amp IGBT Module With Soft Recovery Rectifier, Full Bridge Configuration With Gate Drivers FEATURES • • • • • Hermetic Isolated Metal Package

IRF254

Contextual Info: ^ n a s? ! 2 J H A R R oDsaiafl I • has I R F S 2 5 / R F 2 , I R F 4 5 6 , 2 5 5 / R F 2 5 7 N-Channel Power MOSFETs Avalanche Energy Rated A u g u st 1991 Package Features T O -2 0 4 A E • 22A and 20A, 275V - 250V BOTTOM VIEW • rDS on = 0-14H and 0 .1 7 ii

Contextual Info: □ - □ 3 . Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D5LD20U 200V 5A H S S 'iX > trr35n s >SRS;H > ^ B s O A w0, ^ miBs FA RATINGS Absolute Maximum Ratings a Item a E -f- i s Tc = 25°C — • — — Symbol Conditions ' Tj O pe ra tin g J u n ctio n Tem perature

Contextual Info: 4302571 00530^3 AMI • S] HARRIS HAS IRF15 0 /1 5 1 /1 5 2 /1 53 IRF15 OR/151R/152R/153R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO -2Q 4A E • 33A and 40A, 60V - 100V • r0S on = 0 .0 5 5 fl and 0 .0 8 il y SOURCE

circuits of IRF150

Abstract: IRF150-152
Contextual Info: HARRIS IBM50/151/152/153 IRF150R/151R/152R/153R N -Channel Power MOSFETs Avalanche Energy Rated* August 19 9 1 Package Features TO -2Q 4AE • 33A and 40A, 60V - 100V • rDS on = 0 .0 5 5 ÎÎ and 0 .0 8 fi DRAIN (FLANGE) y SOURCE • Single Pulse Avalanche Energy Rated*

MOSFET IRF150

Abstract: IRF150 MOSFET HA711
Contextual Info: HE 0 I 4055452 DGtnObb 5 | T-39-13 Data Sheet No. PD-9.305G I N T E R N A T IO N A L R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IOR IRF15Ü IRF151 IRF15S -Channel IRF153 Features: 100 Volt, 0.055 Ohm H EXFET The HEXFET technology is the key to International

4433 mosfet

Abstract: 4435 mosfet mosfet 4433 AALN IRFF131
Contextual Info: 2 HARRIS IR FF1 30/131/132/133 IR F F 1 3 0 R /1 31 R /1 3 2 R /1 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A ugust 1991 Features • Package T0205A F 7 .0 A a n d 8 .0 A , 8 0 V - 1 0 0 V • r D S (o n = 0 . 1 8 f t a n d 0 .2 5 f t • S in g le P u lse A v a la n c h e E n e rg y R a te d *

Contextual Info: P - P * # - f * - K Super F ast Recovery Diode Axial Diode OUTLINE DIMENSIONS S3L60 Case : 1 .4 f 25 =1 600V 2.2A § 25 ±2 7 -°" i a+0 2 ^ 4.4 -o.i i * •S B Œ L L D î 0 CD H o (D •trr 5 0 n s If ) ^ Color code (Blue) sk^ epbhbbh Marking ffl m S3L

IRF150

Abstract: R01E MOSFET IRF150 7S001 IRF151 IRF152 IRF153 IRF162 IRF160
Contextual Info: OÏ 3875081 D Ë J 3075001 UG1Û27M 5 | “~ G E SOLID ST A TE _ 01E - — -File Number 18274 . , D Standard Power MOSFETs IRF150, IRF151, |RF152, IRF153

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . ABRUPT VARACTOR DIODES MV1652 - MV1666 DIODE CAPACITANCE Vr = - 4 Vdc, f = 1 MHz PF MIN NOM MAX 120 108 135 132 150 165 162 180 198 200 220 180 220 242 198 250 275 225 270 300 243 297 330 363 Ct TYPE NUMBER MV1652

diode marking 33a on semiconductor

Abstract: marking 33a on semiconductor FDA33N25
Contextual Info: UniFETTM FDA33N25 tm N-Channel MOSFET 250V, 33A, 0.094Ω Features Description • RDS on = 0.088Ω ( Typ.)@ VGS = 10V, ID = 16.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

IRF150R

Abstract: IRF151R IRF152R IRF153R
Contextual Info: Rugged Power MOSFETs. File Num ber 2002 IR F150R , IR F15 1 R , IR F 152R , IR F153R Avalanche Energy Rated N-Channel Power MOSFETs 3 3 A an d 4 0 A , 6 0 V -1 0 0 V ros on = 0 .0 5 5 0 an d 0 .0 8 fi N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

Contextual Info: MEO 500-06 DA Fast Recovery Epitaxial Diode FRED Module VRRM = 600 V IFAVM = 514 A = 250 ns trr Preliminary data 3 3 VRSM VRRM V V 600 600 1 1 Type MEO 500-06DA Symbol Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFRM TC = 75°C TC = 75°C; rectangular, d = 0.5

T814

Abstract: 500-06DA
Contextual Info: MEO 500-06 DA Fast Recovery Epitaxial Diode FRED Module VRRM = 600 V IFAVM = 514 A trr = 250 ns Preliminary data 3 3 VRSM VRRM V V 600 600 1 1 Type MEO 500-06DA Symbol Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFRM TC = 75°C TC = 75°C; rectangular, d = 0.5

DB065

Abstract: e 152 5ma current regulated diode
Contextual Info: S EM ICOND UCTOR 500 mW LL-34 Hermetically Sealed Glass Zener Voltage Regulators SURFACE MOUNT LL34 Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter Value Units 500 mW -65 to +175 °C +175 °C Power Dissipation Storage Temperature Range

UL1385

Abstract: IRKL1 IRK.L1 D243 D244 D245 NSD245 70Dir
Contextual Info: International S Rectifier SERIES IRK.L131/132 FAST RECOVERY DIODES NEW INT-A-pak Power Modules Features • ■ ■ ■ ■ ■ ■ ■ 140A Fast recovery tim e characteristics E lectrica lly isolated base plate Industrial standard package S im plified m echanical designs,

Contextual Info: New Product VS-12EWH06FN-M3 Vishay Semiconductors Hyperfast Rectifier, 12 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr and soft recovery 2, 4 • 175 °C maximum operating junction temperature • For PFC CRM/CCM operation D-PAK TO-252AA

Contextual Info: New Product VS-12EWH06FN-M3 Vishay Semiconductors Hyperfast Rectifier, 12 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr and soft recovery 2, 4 • 175 °C maximum operating junction temperature • For PFC CRM/CCM operation D-PAK TO-252AA

1rf9530

Abstract: IRF9530 IRF9530 mosfet IRF9531 L 9132 IRF9530* p-channel power MOSFET IRF9532 9133 1RF953 IRFP9131
Contextual Info: SA M S UN G E L E C T R O N I C S INC b4E D IR F 9 5 3 0 /9 5 3 1 Z9 5 3 2 / 9 5 3 3 I R F P 9 1 3 0 /9 1 3 1 /9 1 3 2 /9 1 3 3 j • T T b H l H E D D I S E S M Ö D 1! P-CHANNEL POWER MOSFETS FEATU RES • • • • • • • TO-220 Lower R d s o n

5LC20U

Contextual Info: □ - □ 3 . Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D5LC20UR 200V 5A r n y 't'X > trr35n s >SRS;H >^BsOAw0, ^ miBs FA RATINGS Absolute Maximum Ratings a i s E-fS ym bo l Conditions a Item Storage Temperature Operating Junction Temperature

IRF162

Abstract: IRF152 IRF161 IRF163 IRF150 1RF16 circuits of IRF150 MOSFET IRF150 IRF151 IRF153
Contextual Info: Standard Power MOSFETs File Number 1»24 IRF150, IRF151, IRF152, IRF153 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 33 A and 40 A, 60 V - 100 V rDs on = 0.055 Ct and 0.08 Ci N -C H A N N E L E N H A N C E M E N T M O D E