DIODE IN 45 Search Results

marking D33

Abstract: BAS70-07S BAS70-08S
Contextual Info: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF

ALPs modulator

Abstract: BY438 diode BY438 JI75 TRANSISTOR D 819
Contextual Info: SbE ]> 7110ÖSL 0 040 45 1 SOfl • P H I N BY438 P H IL IP S INTERNATIONAL T-OI-is SbE D PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended fo r use as efficiency diode in transistorized horizontal deflection circuits o f television receivers. The

marking hz SOD-323

Abstract: diode sod 106 BAR63J BAS70-07 SOD Package
Contextual Info: BAR63J PIN DIODE FEATURES AND BENEFITS n n n Pin diode for high speed switching of RF signal Low forward voltage Very low capacitance A 35 K DESCRIPTION Single pin diode in SOD-323 package. This diode is intended to be used in mobile phone to switch the RF signal.

zener diode rd20e b2

Abstract: diode zener 1N 398 zener diode B3 Zener Diode B1 9 zener diode rd13e zener diode B5 RD6.2E zener diode rd39e b5 RD6.8E NEC Zener diode RD3.0E
Contextual Info: DATA SHEET ZENER DIODES RD2.0E to RD200E 500 mW DHD ZENER DIODE DO-35 NEC Type RD2.0E to RD200E Series are planar type zener diode in the PACKAGE DIMENSIONS (in millimeters) popular DO-35 package with DHD (Double Heatsink Diode) construction φ 0.5 25 MIN.

BA125 Diode

Abstract: 74118 diode BA125 BA125
Contextual Info: BA 125 Silizium-Kapazitäts-Diode Silicon capacitance diode Anwendungen: Automatische Nachstimmschaltungen in VHF-Tunern Applications: AFC in VHF tuner Abmessungen in mm Dimensions in mm Ir" r\ . . . — II . 1 1— — -L=H»I— . . l Normgehäuse

Contextual Info: 1N4151WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the

Contextual Info: 1N4151WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the

Contextual Info: 1N4151W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the

SDD67HK

Abstract: B1187 4500v DIODE 5035
Contextual Info: SDD67HK ast Reco y DIODE Fast Recov ry 40mm F ver 300A / 4500V The SDD67HK fast recovery diode is designed as a parallel mate for GTO’s used in voltage fed inverter circuits normally requiring the bypass function. Its relatively low recovery current and charge in

Contextual Info: 1N4151W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the

Contextual Info: LTC4358 5A Ideal Diode FEATURES n n n n n n n DESCRIPTION The LTC 4358 is a 5A ideal diode that uses an internal 20mΩ N-channel MOSFET to replace a Schottky diode when used in diode-OR and high current diode applications. The LTC4358 reduces power consumption, heat

33gy7

Abstract: 33gy7a 33GY7-A td324 diode td3 T0324 h 48 diode Scans-0017401 general electric
Contextual Info: PRODUCT INFORMATION — E I J iC T R O S I f: Page 1 IN A C T IO S Compactron Diode-Pentode TUBES The 33GY7-A is a compactron containing a high-perveance diode and a beam-power pentode. The diode is intended for service as the damping diode and the pentode as the horizontaldeflection amplifier in television receivers.

diode 1N5408 specifications

Abstract: 22-DIO4M-1N5408 45-DIO8P-1N5408 22-DIO4P-1N5408 45-DIO8M-1N5408 din 4007 DIODE IN 5408 22-DIO4E-1N5408 IN 4007 diodes diode IN 4007
Contextual Info: Diode Modules EMG .-DIO 1. Description Diode circuits carry out various tasks in electrical and, in particular, electronic control systems, such as: – Electrical decoupling of messages in alarm systems – Use as spark extinguishing diodes to limit surge

TSAL7300

Contextual Info: TSAL7300 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL7300 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, plastic packages. In comparison with the standard GaAs on GaAs

TSAL7300

Contextual Info: TSAL7300 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL7300 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, plastic packages. In comparison with the standard GaAs on GaAs

Contextual Info: LSPAD50 LOW LEAKAGE PICO-AMP DIODE Linear Systems replaces discontinued Siliconix PAD50 LSPAD50 is a low leakage Pico-Amp Diode packaged in hermetic TO-72 The LSPAD50 extremely low-leakage diode provides a superior alternative to conventional diode technology when reverse current leakage must be

BPW78

Abstract: CQX48
Contextual Info: CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.

Contextual Info: 1N4151W-V www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the MiniMELF case

Contextual Info: CQX48 Vishay Semiconductors GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.

Contextual Info: Not for New Design TSSF4500 Vishay Semiconductors High Speed Infrared Emitting Diode in Side View Package Description TSSF4500 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package with

TSSF4500

Contextual Info: TSSF4500 Vishay Telefunken High Speed Infrared Emitting Diode in Side View Package Description TSSF4500 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package with spherical side view lens.

Contextual Info: TSSF4500 Vishay Telefunken High Speed Infrared Emitting Diode in Side View Package Description TSSF4500 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package with spherical side view lens.

CQX47

Abstract: Ban diode
Contextual Info: TSSP4400 Vishay Telefunken GaAs/GaAlAs Infrared Emitting Diode in Side View Package Description TSSP4400 is a high intensity infrared emitting diode in GaAlAs on GaAs technology, molded in a clear, blue– grey tinted plastic package with spherical side view

Contextual Info: CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.