DIODE HITACHI SCHOTTKY Search Results

714 diode varicap

Abstract: hitachi diode Hitachi Zener diodes 1SS106 04BZ Hitachi diodes using a zener diode as a varicap 05AZ HRC0203A GENERAL PURPOSE UHF MW MIXER DIODE
Contextual Info: DIODE Hitachi Diode Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI DIODE 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,

1S2473 DIODE equivalent

Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5

Contextual Info: HSB88WS Silicon Schottky Barrier Diode for Double Balanced Mixer HITACHI Features • • • • Small ÀVFand AC. Good for surface mounting on printed circuit board. Each diode can be biased. Wideband operation. Ordering Information Type No. M ark Package Code

HSB88WS

Contextual Info: ADE-208-026B Z HSB88WS Silicon Schottky Barrier Diode for Double Balanced Mixer Preliminary Rev. 2 Sep. 1993 HITACHI Features Pin Arrangement • Small AVp and AC. • Good for surface mounting on printed circuit board. • Each diode can be biased. • Wideband operation.

Contextual Info: HSM126S Silicon Schottky Barrier Diode for System Protection HITACHI ADE-208-111C Z Rev. 3 May. 1995 Features • HSM126S which is connected in series configuration enable to protect electric systems from missoperation against external + and - surge. •

HITACHI 1SS106

Contextual Info: 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching HITACHI ADE-208-153A Z Rev. 1 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Ordering Information Type No.

Contextual Info: HSU276 Silicon Schottky Barrier Diode for Mixer HITACHI ADE-208-078F Z Rev 6 Features • High forward current, Low capacitance. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information

Contextual Info: ADE-208-154 Z 1SS108 Silicon Schottky Barrier Diode for Various Detector,High Speed Switching HITACHI Features Preliminary Rev. 0 Oct 1993 Outline • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.

DO-35 rectifier

Abstract: diode hitachi schottky hitachi rectifier 1SS108 1SS108 DIODE
Contextual Info: 1SS108 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching HITACHI ADE-208-154A Z Rev. 1 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Ordering Information Type No.

Contextual Info: 1SS198 Silicon Schottky Barrier Diode for Various Detector, High speed Switching HITACHI ADE-208-298A Z Rev. 1 Features • Detection efficiency is very good. • Small temperature coefficient. • Small glass package (MHD) enables easy mounting and high reliability.

Contextual Info: 1SS88 Silicon Schottky Barrier Diode for CATV Balanced Mixer HITACHI ADE-208-187 Z Preliminary Rev. 0 Oct. 1993 Features • Low capacitance. (C = 0.97pF max) • High reliability with glass seal. Ordering Information Type No. Cathode band Mark Package Code

Contextual Info: HSM88WK Silicon Schottky Barrier Diode for Balanced Mixer HITACHI ADE-208-049F Z Rev 6 Jul1998 Features • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No.

diode lt 445

Contextual Info: ADE-208-243B Z HRW2502B Silicon Schottky Barrier Diode for Rectifying HITACHI Features Rev. 2 Ja n .1996 Pin Arrangement • Low forward voltage drop and suitable for high effifiency rectifying. • Full molded fin enables easy insulation from heat sink.

1SS106

Abstract: HITACHI 1SS106 DO-35 rectifier ADE-208-153 glass diode white band 1SS106 diode
Contextual Info: ADE-208-153 Z 1SS106 Silicon Schottky Barrier Diode for Various Detector,High Speed Switching Preliminary Rev. 0 Oct 1993 HITACHI Features Outline • Detection efficiency is very good. =CZ8= • Small temperature coefficient. • High reliability with glass seal.

MARK A Package Code URP

Contextual Info: ADE-208-235D Z HRU0302A Silicon Schottky Barrier Diode for Rectifying HITACHI Outline Features • Low forward voltage drop and suitable for high effifiency forward current. • Ultra small Resin Package (URP) is suitable for high density surface mounting and

HRW34

Contextual Info: HRW34 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Features • Low forward voltage drop. VF= 0.80V max • High reverse voltage. (VR= 90V max) Ordering Information Type No. Laser Mark Package Code HRW34 HRW34 TO-22QAB Pin Arrangement

Contextual Info: HSU276 Silicon Schottky Barrier Diode for Mixer HITACHI ADE-208-078F Z Rev 6 June 1996 Features • High forward current, Low capacitance. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information

Contextual Info: APE-208-401 Z HRF503A Silicon Schottky Barrier Diode for Rectifying HITACHI Features Outline • Low forward voltage drop and suitable for high effifiency rectifying. • DO-214 is suitable for high density surface mounting and high speed assembly. Cathode mark

HSM88WK

Contextual Info: ADE-208-049ECZ HSM88WK Silicon Schottky Barrier Diode for Mixer HITACHI Features Rev. 5 Jul. 1994 Pin Arrangement • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. 4P Ordering Information

Contextual Info: HSM88AS Silicon Schottky Barrier Diode for Balanced Mixer HITACHI ADE-208-046E Z Rev 5 Jul1998 Features • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No.

diode hitachi schottky

Abstract: HRW26F
Contextual Info: HRW26F Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Features • Low forward voltage drop. VF= 0.55V max • High reverse voltage. (VR= 40V max) • Full molded fin enables easy insulation from heat sink. Ordering Information Type No.

HRW36

Contextual Info: HRW36 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Features • Low forward voltage drop. VF= 0.80V max • High reverse voltage. (VR= 90V max) Ordering Information Type No. Laser Mark Package Code HRW36 HRW36 TO-22QAB Pin Arrangement

HRW2502B

Contextual Info: HRW2502B Silicon Schottky Barrier Diode for Rectifying HITACHI ADE-208-243B Z Rev. 2 Jan. 1996 Features • Low forward voltage drop and suitable for high effifiency rectifying . • Full molded fin enables easy insulation from heat sink. Ordering Information

Contextual Info: ADE-208-039D Z HSM276S Silicon Schottky Barrier Diode for Balanced Mixer HITACHI Features Rev.4 Aug. 1994 Pin Arrangement • High forward current, Low capacitance. • HSM276S which is interconnected in series configuration is designed for balanced mixer use