HSM276S Search Results

Marking C9

Abstract: HSM276ASR HSM276SR
Contextual Info: Diodes SMD Type Silicon Schottky Barrier Diode HSM276SR SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 HSM276ASR which is interconnected in series configuration 0.55 High forward current, Low capacitance. 2 +0.1 0.95-0.1

Contextual Info: HSM276SR Silicon Schottky Barrier Diode for Balanced Mixer HITACHI ADE-208-040D Z Rev. 4 Aug. 1994 Features • High forward current, Low capacitance. • HSM276SR which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HSM276SR Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-040D Z Rev. 4 Aug. 1994 Features • High forward current, Low capacitance. • HSM276SR which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.

HSM276SR

Abstract: SC-59A
Contextual Info: HSM276SR Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-040D Z Rev. 4 Aug. 1994 Features • High forward current, Low capacitance. • HSM276SR which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.

MARK C9

Contextual Info: HSM276SR-Silicon Schottky Barrier Diode for Balanced Mixer Features Pin Arrangement • High forward current, Low capacitance. • HSM276SR which is interconnected in series configuration is designed for balanced mixer use • MPAK package is suitable for high density

Contextual Info: Product specification HSM276SR SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 HSM276ASR which is interconnected in series configuration 0.55 High forward current, Low capacitance. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 is designed for balanced mixer use.

Hitachi DSA002789

Contextual Info: HSM276SR Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-040D Z Rev. 4 Features • High forward current, Low capacitance. • HSM276SR which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: ADE-208-039D Z HSM276S Silicon Schottky Barrier Diode for Balanced Mixer HITACHI Features Rev.4 Aug. 1994 Pin Arrangement • High forward current, Low capacitance. • HSM276S which is interconnected in series configuration is designed for balanced mixer use

Contextual Info: ADE-208-040D<Z HSM276SR Silicon Schottky Barrier Diode for Balanced Mixer HITACHI Features Rev.4 Aug. 1994 Pin Arrangement • High forward current, Low capacitance. • HSM276SR which is interconnected in series configuration is designed for balanced mixer use

Contextual Info: HSM276SR Silicon Schottky Barrier Diode for Detector and Mixer REJ03G0139-0500Z Previous: ADE-208-040D Rev.5.00 Nov.10.2003 Features • High forward current, Low capacitance. • HSM276SR which is interconnected in series configuration is designed for balanced mixer use.

HSM276S

Abstract: SC-59A DSA003635
Contextual Info: HSM276S Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-039E Z Rev. 5 Jul. 1998 Features • High forward current, Low capacitance. • HSM276S which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.

HSM276SR

Abstract: SC-59A DSA003635
Contextual Info: HSM276SR Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-040D Z Rev. 4 Aug. 1994 Features • High forward current, Low capacitance. • HSM276SR which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.

Hitachi DSA00773

Abstract: HSM276SR SC-59A
Contextual Info: ADE-208-040D Z HSM276SR Silicon Schottky Barrier Diode for Balanced Mixer Rev.4 Aug. 1994 Features Pin Arrangement • High forward current, Low capacitance. • HSM276SR which is interconnected in series configuration is designed for balanced mixer use • MPAK package is suitable for high density

HSM276S

Abstract: Hitachi DSA00773 SC-59A HSM276SC2
Contextual Info: ADE-208-039D Z HSM276S Silicon Schottky Barrier Diode for Balanced Mixer Rev.4 Aug. 1994 Features Pin Arrangement • High forward current, Low capacitance. • HSM276S which is interconnected in series configuration is designed for balanced mixer use • MPAK package is suitable for high density

HSM276S

Abstract: SC-59A
Contextual Info: HSM276S Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-039E Z Rev 5 Jul 1998 Features • High forward current, Low capacitance. • HSM276S which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HSM276S Silicon Schottky Barrier Diode for Balanced Mixer HITACHI ADE-208-039E Z Rev 5 July 1998 Features • High forward current, Low capacitance. • HSM276S which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: Product specification HSM276S SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 HSM276ASR which is interconnected in series configuration 0.55 High forward current, Low capacitance. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 is designed for balanced mixer use.

Hitachi DSA002748

Contextual Info: HSM276S Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-039E Z Rev 5 July 1998 Features • High forward current, Low capacitance. • HSM276S which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.

HSM276SR

Contextual Info: HSM276SR Silicon Schottky Barrier Diode for Detector and Mixer REJ03G0139-0500Z Previous: ADE-208-040D Rev.5.00 Nov.10.2003 Features • High forward current, Low capacitance. • HSM276SR which is interconnected in series configuration is designed for balanced mixer use.

HSM276S

Abstract: marking c2 diode HSM276ASR
Contextual Info: Diodes SMD Type Silicon Schottky Barrier Diode HSM276S SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 HSM276ASR which is interconnected in series configuration 0.55 High forward current, Low capacitance. 2 +0.1 0.95-0.1

ADE-208-039F

Abstract: HSM276S SC-59A
Contextual Info: HSM276S Silicon Schottky Barrier Diode for Balanced Mixer REJ03G0610-0700 Previous: ADE-208-039F Rev.7.00 Apr 26, 2005 Features • High forward current, Low capacitance. • HSM276S which is interconnected in series configuration is designed for balanced mixer use.

Contextual Info: HSM276S Silicon Schottky Barrier Diode for Balanced Mixer REJ03G0610-0700 Previous: ADE-208-039F Rev.7.00 Apr 26, 2005 Features • High forward current, Low capacitance. • HSM276S which is interconnected in series configuration is designed for balanced mixer use.

HSM276S

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3