DIODE H2 Search Results

MOZ 23

Abstract: DD1000S33HE3 48 H diode
Contextual Info: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values

DD1000S33

Abstract: FZ1000R33HE3
Contextual Info: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values

diode cross reference

Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE

Diode Motorola 711 2N2905A

Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC10H065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

IR PHOTO DIODE

Abstract: PHOTO TRANSISTOR 940nm infrared photo reflector NJL5147EL PHOTO TRANSISTOR NJL1104B NJL1120B NJL1121B NJL1127L NJL5165K-H2
Contextual Info: TEMPORARY OR DISCONTINUE PRODUCT TABLE 1. Temporary Product ITEM Photo Reflector TYPE NJL5165K-H1 ALTERNATIVE ARTICLE NJL5165K-H2 OUTLINE ❍ DISTINCTION CHARACTERISTICS ❍ 2. Discontinue Product ITEM Infrared Emitting Diode λp=940nm Infrared Emitting Diode

PHOTO TRANSISTOR 940nm

Abstract: IR PHOTO DIODE PHOTO TRANSISTOR "Photo Detector" NJL811B NJL5147EL PHOTO detector "photo transistor" ir PHOTO TRANSISTOR IR DETECTOR
Contextual Info: TEMPORARY OR DISCONTINUE PRODUCT TABLE 1. Temporary Product ITEM Photo Reflector TYPE NJL5165K-H1 ALTERNATIVE ARTICLE NJL5165K-H2 OUTLINE ❍ DISTINCTION CHARACTERISTICS ❍ 2. Discontinue Product ITEM Infrared Emitting Diode λp=940nm Infrared Emitting Diode

optointerrupter

Contextual Info: Optointerrupter Specifications _ H22B1, H22B2, H22B3 Optointerrupter GaAs Infrared Emitting Diode andNPN Sfllcon Photo-Darlington Module with 1mm Aperture T he H22B Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon Darlington-connected

22LL

Abstract: H22L2
Contextual Info: Optointerrupter Specifications_ H22L1, H22L2 Optointerrupter GaAs Infrared Emitting Diode and Microprocessor Compatible Schmitt Trigger Module with 1mm Aperture ' M I L L IMETERS i T h e H22L series is a gallium arsenide, in frared em itting diode

Contextual Info: Optointerrupter Specifications H22A4, H22A5, H22A6 Optointerrupter G a A s Infrared Emitting Diode Module with 1mm Aperture N PN Silicon Phototransistor The H22A Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon phototransistor in a

H20R1202

Abstract: h20r1202 igbt equivalent H20R1202 equivalent of h20r1202 igbt h20r1202 H20R IHW20N120R2 H20R120 H20R12 igbt 1200V 60A
Contextual Info: IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications

Contextual Info: Optolnterrupter Specifications H21B4, H21B5, H21B6 Optointerrupter GaAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier Module with 1mm Aperture ~ T he H2 IB Interrupter Module is a gallium arsenide infrared em itting diode coupled to a silicon Darlington-connected

H20R120

Abstract: igbt h20r120 h20r H20R12 h20r120 igbt IHW20N120R ALL h20r120 marking h20r120 Reverse Conducting IGBT with monolithic body diode igbt 1200V 60A
Contextual Info: IHW20N120R Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications

h20r120

Abstract: h20r120 igbt ALL h20r120 IHW20N120R igbt h20r120 m 1305 PG-TO-247-3-21 JESD-022 H20R12 H20R
Contextual Info: IHW20N120R Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :

H25R1202

Abstract: IHW25N120R2 IGBT 600V 40A IGBT 1000V .50A IGBT H25R1202 PG-TO-247-3-21 IGBT 600V 40A diode H25R120
Contextual Info: IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :

H25R1202

Abstract: IGBT H25R1202 H25R120 IHW25N120R2 H25R12
Contextual Info: IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :

H20R120

Abstract: h20r120 igbt 20A 500v igbt
Contextual Info: IHW20N120R Soft Switching Series ^ Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :

H20R1202

Abstract: equivalent of h20r1202 equivalent H20R1202
Contextual Info: IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications