STPSC4H065 Search Results
STPSC4H065 Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| STPSC4H065B-TR | STMicroelectronics | Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 4A DPAK | Original | 12 | |||
| STPSC4H065D | STMicroelectronics | Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 4A TO220AC | Original | 12 | |||
| STPSC4H065DI | STMicroelectronics | Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 4A TO-220AC | Original | 12 | |||
| STPSC4H065DLF | STMicroelectronics | SILICON CARBIDE DIODES | Original | 415.19KB |
STPSC4H065 Price and Stock
STMicroelectronics STPSC4H065DLFDiode Schottky 650V 4A 4-Pin Power Flat EP T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STPSC4H065DLF | 9,000 | 7 |
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| STPSC4H065DLF | 1,000 | 242 |
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| STPSC4H065DLF | 11 | 11 |
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STPSC4H065DLF | 2,504 |
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STPSC4H065DLF | 9,000 | 25 Weeks | 1 |
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STMicroelectronics STPSC4H065B-TRSiC Schottky Diodes 650 V 4A Schottky silicon carbide DPAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STPSC4H065B-TR | 13,459 |
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STMicroelectronics STPSC4H065DISiC Schottky Diodes 650V Pwr Schottky Silicn Carbide Diode |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STPSC4H065DI | 495 |
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STMicroelectronics STPSC4H065DSiC Schottky Diodes 650V pwr Schottky 4A 650V VRRM |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STPSC4H065D |
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STPSC4H065 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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stpsc4h065o-220acstpsc4h065dstpsc4h065di+1 | |
STPSC4H065Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ High forward surge capability A K K Description A K TO-220AC STPSC4H065D |
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stpsc4h065 | |
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Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K K A K TO-220AC STPSC4H065D K A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material |
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stpsc4h065o-220acstpsc4h065ddocid023598 |