DIODE G6 Search Results

BAR63

Abstract: Q62702-A1038 a1038 transistor BR diode A1038 BAR63-04 BAR64 Q62702-A1036 Q62702-A1037 Q62702-A1039
Contextual Info: BAR 63. Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type Marking Ordering code tape and reel BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 G3 G4 G5 G6 Q62702-A1036

FF450R12ME4

Abstract: 220 e87 4506G
Contextual Info: Technische Information / technical information FF450R12ME4 IGBT-Module IGBT-modules - EconoDUAL 3 mit Trench/Feldstop IGBT4 und optimierter Emitter Controlled Diode - EconoDUAL™3 with trench/fieldstop IGBT4 and optimized Emitter Controlled Diode IGBT-Wechselrichter / IGBT-inverter

FF300R12ME4

Contextual Info: Technische Information / technical information FF300R12ME4 IGBT-Module IGBT-modules - EconoDUAL 3 mit Trench/Feldstop IGBT4 und optimierter Emitter Controlled Diode - EconoDUAL™3 with trench/fieldstop IGBT4 and optimized Emitter Controlled Diode IGBT-Wechselrichter / IGBT-inverter

Y1600

Abstract: FS800R06A2E3
Contextual Info: Technische Information / technical information FS800R06A2E3 IGBT-Module IGBT-modules HybridPACK2 Modul mit Trench/Feldstop IGBT³ und Emitter Controlled Diode HybridPACK2 module with trench/fieldstop IGBT³ and Emitter Controlled diode IGBT-Wechselrichter / IGBT-inverter

Contextual Info: US 3A . US 3M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter /4 Surface mount diode Ultrafast silicon rectifier diodes US 3A.US 3M

FS800R07A2E3

Abstract: FS800R07 diode 2dl C0148 JG4100 FS800 kb 61
Contextual Info: Technische Information / technical information FS800R07A2E3 IGBT-Module IGBT-modules HybridPACK 2 Modul mit Trench/Feldstop IGBT³ und Emitter Controlled Diode HybridPACK 2 module with trench/fieldstop IGBT³ and Emitter Controlled diode IGBT-Wechselrichter / IGBT-inverter

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF1400R12IP4 PrimePACK 3 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

Contextual Info: Technische Information / technical information FF900R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

474F3

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt

LTC4098-3.6

Contextual Info: Technische Information / technical information FF600R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

FF200R12KE4

Contextual Info: Technische Information / technical information FF200R12KE4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und optimierter EmCon Diode 62mm C-series module with trench/fieldstop IGBT4 and optimized EmCon Diode IGBT-Wechselrichter / IGBT-inverter

LTC4098-3.6

Abstract: 6N16 l436 SXA-01GW-P0.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt

L6210

Contextual Info: r ^ J S C S - T H O M S O N DUAL SCHOTTKY DIODE BRIDGE • MONOLITHIC ARRAY OF EIGHT SCHOTTKY DIODES ■ HIGH EFFICIENCY . 4A PEAK CURRENT ■ LOW FORWARD VOLTAGE ■ FAST RECOVERYTIME . TW O SEPARATED DIODE BRIDGES D E S C R IP T IO N The L6210 is a monolithic IC containing eight Schottky diodes arranged as two separated diode

10SC4

Contextual Info: Schottky Barrier Diode Twin Diode l ^ t l l OUTLINE Package : E-pack DE10SC4 Unit: mm Weight 0.326tf Typ 4 0 V 10 A Feature G6 • SM D • SMD • P rrsm 7 ' K 5 > î / x (SSE • Prrsm Rating Type wo I H igh lo R a tin g -S m a ll-P K G 10SC4 p -/Hü»XM

S3 DIODE schottky

Abstract: 3522V PHN603S SO24 SOT137-1
Contextual Info: Philips Semiconductors Product specification TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver FEATURES PHN603S SYMBOL • Schottky diode across each MOSFET • Low on-state resistance • Fast switching • Logic level compatible • Surface mount package

SF1154

Abstract: SF-1154 G322L G623 alcoa electrical joint compound 3m scotch-brite DC550 6rt2 ALCOA LS2037
Contextual Info: A801 77mm RECTIFIER DIODE 3200V / 3900A The rectifier diode feature a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.

DIN 16901

Abstract: DIN 16901 130 DIN ISO 2768-M DIN 16901 150 W60Y FS450R12KE4 DIN 16901 140 220 e87
Contextual Info: Technische Information / technical information FS450R12KE4 IGBT-Module IGBT-modules EconoPACK + B-Serie Modul mit Trench/Feldstopp IGBT4 und optimierter EmCon Diode EconoPACK™+ B-series module with trench/fieldstop IGBT4 and optimized EmCon diode IGBT-Wechselrichter / IGBT-inverter

Contextual Info: SKR 2F50 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Fast Recovery Rectifier Diode SKR 2F50 Features # $%&'' *+,)()- *.&(/) # $+01 ()*+,)(2 # 34 1+ 5666 7 (),)(8) ,+'1&/) # 9)(%)1:* %)1&' *&8) ;:1. /'&88 # :<8='&1+( >.()&-)- 81=- ?$@ AB +( 5CDEFG 3HI $JKL *&1.+-) 1+ 81=-

LTC4098-3.6

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF900R12IP4D PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode and NTC

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS200R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter

E72445

Abstract: EFD02CF EFD18 F100 500v 50a scr
Contextual Info: Series EF 50-170Amp • DIODE • SCR/DIODE Modules • High Thermal Efficiency These circuits provide complete power control in a single package, utilizing high thermal efficiency to assure long life and reliable performance. Twelve standard models provide 2500 Vrms

alcoa electrical joint compound

Abstract: SF1154 dissipator presspak diode A800 A800L A800LA A800LB G322L A800LD
Contextual Info: A800 77mm RECTIFIER DIODE 2600V / 4400A SPCO The A800 rectifier diode features a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.

Dow Corning 735

Abstract: dow corning silicone compound alcoa electrical joint compound 2600 corning SF1154 dissipator Silicones dow corning 732 A801CA A801CB
Contextual Info: A801 77mm RECTIFIER DIODE 3200V / 3900A SPCO The rectifier diode feature a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.

SF1154

Abstract: SF-1154
Contextual Info: A800 77mm RECTIFIER DIODE 2600V / 4400A The A800 rectifier diode features a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.