DIODE G6 Search Results

BAR63

Abstract: Q62702-A1038 a1038 transistor BR diode A1038 BAR63-04 BAR64 Q62702-A1036 Q62702-A1037 Q62702-A1039
Contextual Info: BAR 63. Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type Marking Ordering code tape and reel BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 G3 G4 G5 G6 Q62702-A1036

Contextual Info: US 3A . US 3M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter /4 Surface mount diode Ultrafast silicon rectifier diodes US 3A.US 3M

10SC4

Contextual Info: Schottky Barrier Diode Twin Diode l ^ t l l OUTLINE Package : E-pack DE10SC4 Unit: mm Weight 0.326tf Typ 4 0 V 10 A Feature G6 • SM D • SMD • P rrsm 7 ' K 5 > î / x (SSE • Prrsm Rating Type wo I H igh lo R a tin g -S m a ll-P K G 10SC4 p -/Hü»XM

W6 Diode

Contextual Info: SKN 2F50 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Fast Recovery Rectifier Diode SKN 2F50 Features # $%&'' *+,)()- *.&(/) # $+01 ()*+,)(2 # 34 1+ 5666 7 (),)(8) ,+'1&/) # 9)(%)1:* %)1&' *&8) ;:1. /'&88 # :<8='&1+( >.()&-)- 81=- ?$@ AB +( 5CDEFG 3HI $JHK &<+-) 1+ 81=-

S3 DIODE schottky

Abstract: 3522V PHN603S SO24 SOT137-1
Contextual Info: Philips Semiconductors Product specification TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver FEATURES PHN603S SYMBOL • Schottky diode across each MOSFET • Low on-state resistance • Fast switching • Logic level compatible • Surface mount package

Contextual Info: SKR 2F50 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Fast Recovery Rectifier Diode SKR 2F50 Features # $%&'' *+,)()- *.&(/) # $+01 ()*+,)(2 # 34 1+ 5666 7 (),)(8) ,+'1&/) # 9)(%)1:* %)1&' *&8) ;:1. /'&88 # :<8='&1+( >.()&-)- 81=- ?$@ AB +( 5CDEFG 3HI $JKL *&1.+-) 1+ 81=-

SF1154

Abstract: SF-1154
Contextual Info: A800 77mm RECTIFIER DIODE 2600V / 4400A The A800 rectifier diode features a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.

Contextual Info: Super Fast Recovery Diode Twin Diode l ^ DE5LC40 t l l O U T L IN E Unit I mm Weight 0.326g Typ Package I E-pack m 40 0V 5A Feature • SMD G6 • SM D • Low Noise • trr=50ns • trr- 5 0 n s • T . 'f • Switching Regulator • DC/DC 3 y i { - 9 • D C /D C C onverter

UPS APC 800 CIRCUIT

Abstract: APC UPS CIRCUIT BOARD collimated LED 670 nm Laser Diode 808 2 pin 1000 mw APC back UPS RS 800 UPS APC CIRCUIT 1550nm 5mw laser diode APC UPS repair temperature controlled fan project Fabry-Perot-Laser-Diode 1310 1550
Contextual Info: Laser Diode Products for the OEM  INTRODUCTORY INFORMATiON Who we are & what we do Thank you for your interest in Power Who we are Technology, Inc. The past three decades k Manufacturer of OEM laser diode products for analytical, biomedical, & industrial applications

application of scr 1000 amps with circuit diagram

Abstract: Diode SCR 5v 1202 transistor E72445 DIODE i2t EFD18 scr power controls schematic SCR 100A scr 50a to 65 SCR Phase Control
Contextual Info: Series EF 50-170 Amp • DIODE • SCR/DIODE Modules • High Thermal Efficie ncy These circuits provide complete power control in a single package, utilizing high thermal efficiency to assure long life and reliable performance. Twelve standard models provide 2500 Vrms

BAV74LT1

Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode BAV74LT1 3 1 ANODE 3 CATHODE 1 2 ANODE 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING BAV74LT1 = JA MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Symbol VR IF Value

Contextual Info: UF 5400.UF 5408 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter *0 Axial lead diode Ultrafast silicon rectifier diodes 8  9  1  9  9  -)  1

transistor A1267

Abstract: A1268 a1267 Q62702-A1268 a1261 A1267 transistor Q62702-A1267 Q62702-A1261 VSO05561
Contextual Info: BAR 63 . W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63-04W BAR 63-05W VSO05561 BAR 63-06W Type Marking Ordering Code Pin Configuration

SMD MARKING g5 sot

Abstract: smd diode g6 smd diode g5 smd marking rs SMD MARKING g5 SMD MARKING g4 marking G3 maxim package marking SMD MARKING g3 6305
Contextual Info: Diodes SMD Type Silicon PIN Diode BAR 63;BAR63-04 BAR 63-05;BAR63-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward resistance 0.55 PIN diode for high speed switching of RF signals +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1

Pin diode G4S

Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
Contextual Info: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181

Contextual Info: Terminal Relay G6B-4CB CSM_G6B-4CB_DS_E_4_1 Compact Terminal Relay with SPDT Relays and 4 Outputs • Four G6B-2114P-US Relays mounted. • LED operation indicator. • Built-in diode absorbs coil surge. • Special socket used for easy Relay replacement.

ferrite antenna

Abstract: AY-G64S
Contextual Info: MODEL AY-G64S 4 X 8 High Power, High Isolation, Switch Matrix, Cellular/GSM TECHNICAL BULLETIN Description The Model AY-G64S switch, is a “non blocking” PIN diode switched array, that combines four 4 transmitter input signals to any of (8) outputs. A

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

Contextual Info: SKKD 46/16 G6 Absolute Maximum Ratings Symbol Conditions Values Unit A Recitifier Diode Tc = 85 °C 57 Tc = 100 °C 43 A Tj = 25 °C 700 A Tj = 130 °C 600 A Tj = 25 °C 2450 A2s Tj = 130 °C 1800 A2s VRSM 1700 V VRRM 1600 V -40 . 130 °C -40 . 125 °C

Contextual Info: SKKD 46/08 G6 Absolute Maximum Ratings Symbol Conditions Values Unit A Recitifier Diode Tc = 85 °C 57 Tc = 100 °C 43 A Tj = 25 °C 700 A Tj = 130 °C 600 A Tj = 25 °C 2450 A2s Tj = 130 °C 1800 A2s VRSM 900 V VRRM 800 V -40 . 130 °C -40 . 125 °C 1 min

Contextual Info: SKKD 46/08 G6 Absolute Maximum Ratings Symbol Conditions Values Unit A Recitifier Diode Tc = 85 °C 57 Tc = 100 °C 43 A Tj = 25 °C 700 A Tj = 130 °C 600 A Tj = 25 °C 2450 A2s Tj = 130 °C 1800 A2s VRSM 900 V VRRM 800 V -40 . 130 °C -40 . 125 °C 1 min

CDSOD323-T18S

Abstract: CDSOD323-T12S CDNBS08 CDNBS08-SRDA05-6 CDSOD323-T05SC CDSOD323-T15SC CDSOD323-T08S CDSOT23 SUMITOMO g600 CDSOD323-T08
Contextual Info: CHIP DIODES Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team January, 2010 Bourns Diode Products Addition of Second Wafer Fabrication Location and Support of “Green” Products

CDSOD323-T05C

Abstract: SUMITOMO g600 ESD1006 CDSOD323-T12C CDSOD323-T12LC CDSOD323-T24 CDSOD323-T24LC CDSOD323-T05 CDSOD323-T08 CDSOD323-T08C
Contextual Info: CHIP DIODES Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team February, 2010 Bourns Diode Products Addition of Second Wafer Fabrication Location and Change to “Green” Compliance

SM712

Abstract: SUMITOMO g600 CDNBS08-PLC03-6 CDSOT23-SLVU2 CDSOT23-SM712 G600
Contextual Info: CHIP DIODES Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team April, 2010 Bourns Diode Products Addition of Second Wafer Fabrication Location and Change to “Green” Compliance