DIODE G1 Search Results

FMN-G14S

Contextual Info: SANKEN ELECTRIC CO., LTD. FMN-G14S 1. Scope The present specifications shall apply to Sanken silicon diode, FMN-G14S. 2. Outline Type Silicon Rectifier Diode Structure Resin Molded Applications High Frequency Rectification Flammability : UL94V-0 Equivalent

FMN-G12S

Abstract: fmng12 fmng12s
Contextual Info: SANKEN ELECTRIC CO., LTD. FMN-G12S 1. Scope The present specifications shall apply to Sanken silicon diode, FMN-G12S. 2. Outline 030225 Type Silicon Diode Structure Resin Molded Applications Pulse Rectification，etc. Flammability: UL94V-0 Equivalent 1／4

FMX-G14S

Contextual Info: SANKEN ELECTRIC CO., LTD. FMX-G14S 1. Scope The present specifications shall apply to Sanken silicon diode, FMX-G14S. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification，etc. Flammability: UL94V-0 Equivalent 3. Absolute maximum ratings

diode 1000V 10a

Abstract: 02 diode case R-1 diode case R-1 200V-1000V
Contextual Info: ZOWIE Low VF Rectifier Diode G110DLH THRU G110MLH Low VF Rectifier Diode 200V~1000V / 1.0A VF < 0.90V @IF = 1A FEATURES IFSM = 30Amp * * * * * * Halogen-free type Lead free product, compliance to RoHS GPRC (Glass passivated rectifier chip) inside Glass passivated cavity-free junction

transistor irf 645

Abstract: diode 400v 2A ultrafast AN-994 C-150 IRFR120 IRFU120 IRGR3B60KD2 R120 all transistor IRF 310 RG3250
Contextual Info: PD - 94601A IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

transistor irf 645

Abstract: AN-994 C-150 IRFR120 IRFU120 IRGR3B60KD2 R120
Contextual Info: PD - 94601A IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

IRGB10B60KD

Abstract: C-150 IRF1010 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
Contextual Info: PD - 94382C IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

C-150

Abstract: IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD transistor* igbt 70A 300 V
Contextual Info: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

L30 dual diode

Contextual Info: STPS20200C Power Schottky diode Datasheet  production data Features Diode 1 • Low forward voltage drop A1  Very small conduction losses K Diode 2  Negligible switching losses A2  Extremely fast switching  Low thermal resistance K  -40°C minimum operating Tj

C-150

Abstract: IRF1010 IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD IRL3103L
Contextual Info: PD - 94381D IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

TUNNEL DIODE

Abstract: mbd1057 MBD3057 MBD2057 MBD-1057 Characteristics curve of diode TUNNEL DIODE spice model "tunnel diode" diode tunnel tunnel
Contextual Info: 1 Spice Model for Metelics Tunnel Diode Spice does not contain a model for the Tunnel Diode. To correct this omission, use the macromodel shown below. Anode 1 C1 G1 Cathode (2) G1 models the reverse and forward bias IV curve. The model does not accurately represent the negative

diode 107 10K 501

Abstract: G103 G003 G101 G102 32MHz quartz RESONATOR amd IC amplifier G701 11nQ
Contextual Info: iC-VJ, iC-VJZ LASER DIODE CONTROLLER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Transmitter for laser light barriers from 1 to 200kHz ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ◊ ◊ Laser diode driver of up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode

transistor lt 2815

Contextual Info: LTC4085 USB Power Manager with Ideal Diode Controller and Li-Ion Charger DESCRIPTION FEATURES n n n n n n n n n n Seamless Transition Between Input Power Sources: Li-Ion Battery, USB and 5V Wall Adapter 215mΩ Internal Ideal Diode Plus Optional External Ideal Diode Controller Provide Low Loss PowerPath

Philips diode

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D119 BAQ800 AM PIN diode Product specification File under Discrete Semiconductors, SC01 1997 Aug 26 Philips Semiconductors Product specification AM PIN diode BAQ800 FEATURES DESCRIPTION • Glass passivated

PDF PIN PHOTO DIODE DESCRIPTION

Abstract: tda8808 TDA8808AT TDA8808T GCLF PHOTO diode
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA8808T TDA8808AT Photo diode signal processor for compact disc players Product specification File under Integrated Circuits, IC01 November 1987 Philips Semiconductors Product specification Photo diode signal processor for compact disc players

P 939 DIODE

Abstract: EBL1
Contextual Info: PHILIPS ABL1 DOUBLE DIODE-OUTPUT PENTODE DOUBLE DIODE-PENTHODE DE SORTIE DOPPELDIODE-ENDPENTODE Keating :indirect; parallel supply Vf =4,0 V Chauffage :indirect ; alimentation- parallèle =2 4 A Heizung :indirekt; Parallelspeisung * * m ax 46 Dimensions in mm

A12Q

Contextual Info: PD - 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.

G12 SMD

Abstract: JEDEC DO-213AC
Contextual Info: LL4148/LL4448/LL914B 500mW High Speed SMD Switching Diode Small Signal Diode Mini-MELF LL34 HERMETICALLY SEALED GLASS Features —Fast switching device(T rr<4.0nS) —Surface device type mounting —Moisture sensitivity level 1 —Matte Tin (Sn) Terminal Finish

Contextual Info: PD - 94925B IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.

VSK.F180.P

Abstract: k20s TA7000
Contextual Info: VSK.F180.P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAK Power Modules , 180 A FEATURES • Fast turn-off thyristor • Fast recovery diode • High surge capability • Electrically isolated baseplate • 3000 VRMS isolating voltage

tr 453 thyristor

Contextual Info: VSK.F180.P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAK Power Modules , 180 A FEATURES • Fast turn-off thyristor • Fast recovery diode • High surge capability • Electrically isolated baseplate • 3000 VRMS isolating voltage

Contextual Info: VSK.F200.P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAK Power Modules , 200 A FEATURES • Fast turn-off thyristor • Fast recovery diode • High surge capability • Electrically isolated baseplate • 3500 VRMS isolating voltage

SCR 100A 1600V

Abstract: SCR 100V 100A scr applications circuit diagram powerex nd42
Contextual Info: ND42_25 TM POW-R-BLOK Dual SCR/Diode Isolated Module 250 Amperes / Up to 1600 Volts Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING Powerex Dual SCR/Diode Modules are designed for use in applications

3 phase 100A SCR CONNECTION

Abstract: ND421825 powerex nd42
Contextual Info: ND421825 POW-R-BLOKTM Dual SCR/Diode Isolated Module 250 Amperes / 1800 Volts Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING Powerex Dual SCR/Diode Modules are designed for use in applications requiring phase control and isolated