DIODE FR 307 Search Results

Contextual Info: Optointerrupter Specifications H21A4, H21A5, H21A6 Optointerrupter GaAs Infrared Emitting Diode and NPN Silicon Phototransistor Module with 1mm Aperture ~ T h e H 21A In te r r u p te r M o d u le is a g a lliu m a r s e n id e in fr a r e d e m ittin g d io d e c o u p le d to a silic o n p h o to tr a n s is to r in a

JE350

Abstract: D1CAK20
Contextual Info: DIODE A R R A Y F.R.D. Type D 1C A K 2 0 / D 1 C A K 2 0 R Features ' -p* -i ^ — K <50 ' r ' & t 7y 3 7 7 " 4 7 / — K* =? — K - > iz r - r 0 * 3 -7 =i x h»v ^ y c. D IC A K 2 0 P -y h D Daa te Cod e D t CA-; ¿ ¿ fr ¡Hg firt T y p e No. p o la r ity

IRF*125

Abstract: s4c diode IRFR IRFR020 0MFL IRFU025
Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7^4142 IRFR020/22/24/25 IRFU020/22/24/25 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • □□1232Q 307 ■ SMGK D-PACK L ow e r R d s <o n > Im p ro ve d in du ctive r u g g e d n e s s F a s t s w itc h in g tim e s

S2VB40

Abstract: S2VB20 SHINDENGEN DIODE
Contextual Info: Sauare In-line Packag Bridge Diode 54E 1> SHINDENGEN ELECTRIC MFG ISHEJ • 021^307 QOOOSll TQ3 O U T L IN E D IM E N S IO N S S2VBD 600V 2A ■ RATING S $5;fcÎSi:£/ËÎ& n Absolute Maximum Ratings @ t m Symbol I t em Storage Tem perature S-g-gPfiJS Operating Junction Tem perature

BUP 307D

Contextual Info: SIEMENS BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type BUP 307D VCE h 1200V 35A Pin 3 E C Package Ordering Code

Contextual Info: 3 STACK PULSED LASER DIODE L11348-307-05 FEATURES Peak Output Power : Fep 21 W Peak Emission Wavelength : 870 nm ± 10 nm Emitting Area Size : 70 mm x 10 mm APPLICATIONS Laser Range Finder Security ABSOLUTE MAXIMUM RATINGS Top(c = 25 °C) Symbol Value Unit

Contextual Info: 3 Stack Pulsed Laser Diode L11854-307-05 Features Radiant peak output power: > =21 W Peak emission wavelength: 905 nm Emitting area size: 70 mm x 10 mm Applications Laser range finder Security Measuring instruments Absolute maximum ratings Top(c = 25 ℃)

ASI15

Contextual Info: DATA SHEET NEC LIGHT EMITTING DIODE ELECTRON DEVICE S E 307-C GaAs INFRARED EMITTING DIODE -N EP O C SERIES— DESCRIPTION The SE307-C is a GaAs Gallium Arsenide Infrared Emitting Diode which is m ounted on the lead frames and molded in plastic. On forward bias, it emits a spectrally narrow band of radiation peaking at 9 4 0 nm.

IRFU220

Abstract: IRFR220 U222 irfu220 samsung J50V IRFR222 G31* Diode B51A 222 diode
Contextual Info: SAMSUNG ELECTRONICS INC bME D • 7 *lh4m S IKFH220/222 IRFU220/222 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • 0 Q 1 2 3 MG ITS « S H G K D-PACK Lower Rds <on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

Contextual Info: SIEMENS BUP 307 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type BUP 307 VCE h 1200V 35A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-218AB Q67078-A4201-A2 Maximum Ratings

8 pin IC 1038

Abstract: MIL-STD-750 METHOD 2036 conditions E xt 3001 digital phase shifters
Contextual Info: HEWL ET T - PACKARD- , CMPNTS EGE D B 44475Ö4 QD0S7b7 HIGH RELIABILITY PIN DIODES FOR RF SWITCHING AND ATTENUATING m]n HEW LETT tti/Li PACKARD 5 TX-3001 TXB-3001 TXV-3001 TXVB-3001 E3 TX-3077 TXB-3077 TXV-3077 TXVB-3077 Generic 5082-3001 and -3077 T ' O

CBF493S

Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

marking 513 SOD-323

Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

TRANSISTOR AH-16

Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

Contextual Info: Ordering number : EN7107A Monolithic Digital IC LB11824M For On-Demand Water Heater and Air Conditioner Motors Direct PWM Drive Brushless Motor Predriver Overview The LB11824M is a direct PWM drive predriver IC for use with three-phase power brushless motors. The LB11824M can

water level sensor WL 400

Abstract: 375MI LB11820M 71044
Contextual Info: Ordering number : ENN7104A Monolithic Linear IC LB11820M Direct PWM Drive Brushless Pre-Driver for Household Appliance Motors Overview Package Dimensions The LB11820M is a direct PWM drive pre-driver IC that is appropriate for 3-phase power brushless motors. This IC

7107 applications

Abstract: LB11824M
Contextual Info: Ordering number : EN7107A Monolithic Digital IC LB11824M For On-Demand Water Heater and Air Conditioner Motors Direct PWM Drive Brushless Motor Predriver Overview The LB11824M is a direct PWM drive predriver IC for use with three-phase power brushless motors. The LB11824M can

d823

Abstract: hp 3077 HP 5082-3081 5082-3039 HP 5082-3039 in5767 5082-XXXX hp 3077 diode
Contextual Info: Wfipl mHHM HEW LETT PACKARD PEN Diodes for RF Switching and Attenuating Technical Data Features • • • • Low Harm onic D istortion Large Dynam ic Range Low S eries R esistance Low C apacitance Description/Applications These general purpose switching

water level sensor WL 400

Abstract: LB11824M
Contextual Info: Ordering number : ENN7107 Monolithic Digital IC LB11824M Direct PWM Drive Brushless Motor Predriver for On-Demand Water Heater and Air Conditioner Motors Overview Package Dimensions The LB11824M is a direct PWM drive predriver IC for use with three-phase power brushless motors. The

Contextual Info: Ordering number : ENN7104 Monolithic Linear IC LB11820M Direct PWM Drive Brushless Pre-Driver for Household Appliance Motors Overview Package Dimensions The LB11820M is a direct PWM drive pre-driver IC that is appropriate for 3-phase power brushless motors. This IC

Contextual Info: Central" CMPD4448 semiconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD4448 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed switching applications.

water level sensor WL 400

Abstract: LB11695 ZENER DIODE D1306
Contextual Info: Ordering number : EN7948 Monolithic Digital IC LB11695M Direct PWM Drive Brushless Motor Predriver IC for Hot Water Heaters and Air Conditioners Overview The LB11695M is a direct PWM drive predriver IC designed for three-phase power brushless motors. A motor driver

Contextual Info: V 3 7 K Schottky Barrier Diode Single Diode OUTLINE DIMENSIONS SF5S6 60V 5A • T j 15CTC •P b rs m 7 y '3 V ï 'i'S I Œ • Îê S ü Œ 2 K V « B E •S R B S •D C /D C D V n -ÿ • 8 f - U . Ä O AÜ äi • a f i. § A bsolute M axim um Ratings

Contextual Info: Ordering number : EN7948 Monolithic Digital IC LB11695M Direct PWM Drive Brushless Motor Predriver IC for Hot Water Heaters and Air Conditioners Overview The LB11695M is a direct PWM drive predriver IC designed for three-phase power brushless motors. A motor driver