DIODE FR 10E Search Results

SWITCHPLEXER

Abstract: DFC2R MuRata Gigafil CE053R836DCB DFC31R DFY2R dfc3r881 CFUXC450 DFC21R89 LMC36
Contextual Info: This is the PDF file of catalog No.K09E-5. No.K09E5.pdf 00.1.31 Murata Products for Mobile Communications GSM DCS1800 E-TACS DECT CT-2 W-CDMA ISM2400 PCS IS136 AMPS/ADC PCS (GSM) CDMA800 PCS (CDMA) ISM900 ISM2400 PDC800 J-CDMA ISM2400 GSM CDMA PHS E-TACS AMPS DECT

ST 9221

Abstract: 9221 st LM611CM
Contextual Info: !2] National ÆM Semiconductor LM611 Operational Amplifier and Adjustable Reference General Description Features The LM611 consists of a single-supply op-amp and a pro­ grammable voltage reference in one space saving 8-pin package. The op-amp out-performs most single-supply opamps by providing higher speed and bandwidth along with

RK 723 007

Abstract: DIODE RK 306 SELECTOR SWITCH ASEA ABG RK 795 001-aa RK741 RK717 CATALOGUE SK 63-1 E ASEA ABG 10 RK795 RK70-10E
Contextual Info: C a ta lo g u e R K 70- 10E Edition 1 5930-09 Su persecTes calatog ues R K 7 M O E RK 74-1OE and R K 7 8 -2 E Relay accessories Pushbuttons Component blocks ASEA T h e re lay accesso ries a re used to provide a relay, protective relay or other equip m en t, with

signetics 10116

Abstract: NE5212 Signetics ne5212 NE5212N signetics ne5230 SE5212N wifi 5 watt amplifier circuit LT 4320
Contextual Info: NE/SA/SE5212 Signetics Transimpedance Amplifier 140MHz Product Specification Linear Products DESCRIPTION FEATURES The NE/SA/SE5212 is a 14ki2 transim­ pedance, wideband, low noise differen­ tial output amplifier, particularly suitable for signal recovery in fiber optic receiv­

irf510 Motorola

Abstract: irf510 ir
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF510 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TM O S Power FET is designed for low voltage, high speed power switching applications such as switching regulators, con­ verters, solenoid and relay drivers.

DIODE 839

Abstract: HSCH-9161 zero bias schottky diode detector zero bias diode
Contextual Info: TOSI WLEMHEWLETT PACKARD Zero Bias Beamlead Detector Diode Technical Data HSCH-9161 Features • Low Junction Capacitance • Lower Tem perature C oefficient than Silicon • Durable C onstruction— Typical 6 gram beam lead strength • O peration to 110 GHz

HSCH-9161

Contextual Info: What H E W L E T T * mLlíM P A C K A R D Zero Bias Beamlead Detector Diode Technical Data HSCH-9161 Features Applications • Low Junction Capacitance • Lower Temperature Coefficient than Silicon • Durable Construction— Typical 6 gram beamlead strength

cd74ac253

Contextual Info: Technical Data _ CD54/74AC253 CD54/74ACT253 Advance Information 10E1 I0 - II3 - 50 51 210 - Dual 4-Input Multiplexer, 3-State * «1- 5 112- 4 SEL/MUX -1V Type Features: Buffered inputs • Typical propagation delay: 6.3 ns @ Vcc = 5 V, f A = 25° C, CL = 50 pF

Contextual Info: S IE M E N S SIPMOS Power MOS Transistors VDS l0 ^ D S o n • BUZ 77 A BUZ 77 B = 600 V = 2 .7 /2 .9 A = 4 .0 /3 .5 fi N channel • E nhancem ent m ode • A valanche-proof • Package: TO -220 A B 1) Type Ordering code BUZ 77 A C 6 70 78-S 1 32 0-A 3

TIL702

Abstract: TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6
Contextual Info: m The Optoelectronics Data Book for Design Engineers T e x a s In s t r u m e n t s IMPORTANT NOTICES Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible. Tl cannot assume any responsibility for any circuits shown or

BC517 spice model

Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
Contextual Info: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information

Contextual Info: PRELIMINARY October 12 ,199 8 SCEN1X S X 18A C / SX20AC I SX28A C High-Performance 8-Bit Microcontrollers with EE/Flash Program Memory and In-System Programming Capability 1.0 1.1 PRODUCT OVERVIEW Introduction 1.2 The SX18AC, SX20AC, and SX28AC are members of

HSMS2851

Abstract: 3BT SOT-23 sot 23 marking code rad transistor tag 306 marking 2u sma microstrip RFID tag HSMS-2851 HSMS2850 HSMS-285X
Contextual Info: Whpt HEW LETT WLk M PACKARD Surface Mount Zero Bias Schottky D etector D iodes Technical Data HSMS-285X S eries F ea tu res • Surface Mount SOT-23/ SOT-143 Package • H igh D etection Sensitivity: 40 mV/fiW at 915 MHz 30 mV/|iW at 2.45 GHz 22 mV/|uW at 5.80 GHz

marking 2U 58 diode

Abstract: marking 2U diode t5 marking code KE diode L31 diode sot-23 marking diode KE SOT23 MARKING KE AT-05 MARKING- L31 diode marking code 2U marking L31 SOT23
Contextual Info: W Ljm H E W L E T T Bita P A C K A R D Surface Mount Microwave Schottky Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series Features • Surface M ount SOT-23/ SOT-143 Package • High Detection Sensitivity: up to 50 mV/ iW at 915 MHz up to 35 mV/nW at 2.45 GHz

Contextual Info: Technical Data File N um ber CD54/74HC253 CD54/74HCT253 1673 High-Speed CMOS Logic Dual 4-Input Multiplexer -Ü — _5 _ SEL/MUX -L _ - 3— 14 Type Features: • C om m on select inpu ts • Separate output-enable inputs • 3-state ou tputs 2 11 I T " 1SEL/MUX

Contextual Info: SIEMENS w ithout cutout V23809-K305-C10 V23809-K305-C13 w ith cutout AC/DC Coupled Multim ode 850 nm 1.3 Gigabit Ethernet 1x9 Transceiver Preliminary Dimensions in mm inches V ie w Z (Lead cross section and sta n d o ff size) (11.5 max) .453 max. (7.42-0.15)

SWRA029

Abstract: Modco receiver Vari-L VCO 116 Application Note fractional N PLL TRF2020 Roland e 38 schematic Sampling Phase Detectors Vari-L VCO 116 Application Note diode ring mixer phase detector Modco 1.4 GHz
Contextual Info: Technical Brief SWRA029 Fractional/Integer-N PLL Basics Edited by Curtis Barrett Wireless Communication Business Unit Abstract Phase Locked Loop PLL is a fundamental part of radio, wireless and telecommunication technology. The goal of this document is to review the theory, design and analysis of PLL

Contextual Info: ANALOG DEVICES Quad Precision, High Speed Operational Amplifier 0P467 FEATURES High Slew Rate - 170 V/|is Wide Bandwidth - 28 MHz Fast Settling Time - <200 ns to 0.01% Low Offset Voltage - <500 |iV Unity-Gain Stable Low Voltage Operation ±5 V to ±15 V Low Supply Current - <10 mA

102OE

Contextual Info: HD74ALVCH16374— Preliminary 16-bit D-type Flip Flops with 3-state Outputs Description The HD74ALVCH16374 has sixteen edge trigger D type flip flops with three state outputs in a 48 pin package. Data at the D inputs meeting set up requirements, are transferred to the Q outputs on positive

BD9781

Abstract: BD9001
Contextual Info: / “ \ S3 TECHNICAL NOTE 1chip built-in FET type Switching Regulator Series Flexible Step-down Switching Regulator ^ re e ROHM OaetrsneComponent» R oH S Otrccllve Compilane BD9778F/HFP, BD9001F, BD9781HFP # Description The flexible step-down switching regulator controller is a switching regulator controller designed with a high-withstand-voltage

Contextual Info: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA DISCRETE/OPTO 2SD1069 Sb DE | C1DC]7ESD 0 D D 7 Ö S S “’ ” V ö r —Ö785 5 Ö ? SILICON NPN DOUBLE DIFFUSED TYPE (PCT PROCESS) Unit in nun TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. la S M A X . w HIGH VOLTAGE SWITCHING APPLICATIONS.

B0817

Contextual Info: Medium voltage fuses Medium voltage fuses Medium voltage fuses Medium voltage fuses European Fuses DIN Fuses 7.2kV - 36kV IBD 7.2 UP TO 36 KV HIGH-VOLTAGE FUSES DESIGNED FOR POWER TRANSFORMER PROTECTION INTERIOR/EXTERIOR USE CERAMIC HOUSING “MEDIUM” CLASS TRIP-INDICATOR

Contextual Info: TOSHIBA TC74LCX125F/FN/FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74LCX125F, TC74LCX125FN, TC74LCX125FT LOW VOLTAGE QUAD BUS BUFFER WITH 5V TOLERANT INPUTS AND OUTPUTS The TC74LCX125 is a high performance CMOS QUAD BUS BUFFERS. Designed for use in 3.3 Volt systems, it achieves

motorola diode cross reference

Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3