DIODE FAJ Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

ci 4502

Abstract: ECT180
Contextual Info: 4A 35V Tjw150V 7¿Zfr n íZ h FSQS04A035 Fully Molded similar to TO-220AC ttfl» Nihon Inter Electronics Corporation Specification. Construction '> 3 * Schottky Barrier Diode Application High Frequency Rectification I I MAXIMUM RATINGS Ta=25cC: Unless otherwise specified

K791

Abstract: Diode FAJ package Diode FAJ Diode FAJ 45
Contextual Info: [ • 9 m iELECIIIIIU GaAs INFRARED EMITTING DIODE 1N626S The 1N6265 is a 940nm LED in a wide angle, TO-46 package. SEATING PILANE -Mh t 11 * Good optica! to m echanical alignment ST1331 e 8, INCHES MILUMETERS MOTES MIN. MAX MAX. MIN. .155 3 53 .616 .407 ,533

Diode FAJ 45

Abstract: Diode FAJ package
Contextual Info: 1 * GaAs INFRARED EMITTING DIODE IFTIELECTlllltS CQX14, CQX16 The CQX14/16 are 940nm LHDs in narrow angle, TQ-46 packages. SÊAHNÛ ST1332 N Good optica! to mechanical alignment SYMBOL INCHES MiN ' MAX. A 0b «>0 «•0, e * h i k L « .01« 209 255 .021 .230

Contextual Info: SK 10 BGD 065 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter Q$RS E$ E$YZ QFRS C-L MNO$P 407,- %*8,23.-, -', .6.,+ C- L MN <VU? O$ E$YZL M ; E$0%&P *' L W &- C¥ Diode - Inverter SEMITOP 3 1-phase bridge rectifier +

FAJ 40

Abstract: Diode FAJ Diode FAJ 22 FAJ 42
Contextual Info: SK 10 DGDL 065 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper Q$RS E$ E$YZ QFRS C-L MNO$P 407,- %*8,23.-, -', .6.,+ C- L MN <VU? O$ E$YZL M ; E$0%&P *' L W &- C¥ Diode - Inverter, Chopper SEMITOP 3 3-phase bridge rectifier +

Contextual Info: SK 20 DGD 065 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper Q$RS E$ E$XY QFRS C-L MNO$P 407,- %*8,23.-, -', .6.,+ C- L MN <VU? O$ E$XYL M ; E$0%&P *' L W &- C¥ Diode - Inverter, Chopper SEMITOP 3 3-phase bridge rectifier

TXAL 228 B

Abstract: 2SAB12 K1589 2sc2554 k2499 P015M 2SD 1694 2482S K2134 diode zener nt 1243
Contextual Info: QUICK REFERENCE GUIDE 2 ELECTRICAL SPECIFICATION LIST 2 PIN ULTRA SUPER MINI MOLD • Noise Clipping Diode fMNCD[ JC Series) M axim am R atings5 Electrical Characteristics {T a = 2 5 ‘CJ O a = 2 5 ‘C ì Type No. Application V b r (V) P tm W ) M IN . S M A X

transistor bel 100

Abstract: transistor f151 B-429 30S3 F151 M606 transistor BC 2500
Contextual Info: 6DI5OZ-12O 50a ‘ Outline Drawings POWER TRANSISTOR MODULE I 12 0 13 « I : F e a tu re s • S lt / E High Voltage • 7U— Krtilc • A S O ^ Ja I ' Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type • A p p lic a tio n s 31

DI200

Abstract: 1DI200M-120 M109 T151 b3171 BO-120
Contextual Info: 1 D I 2 M 2 0 2o o a - 1 '< • 7 — : Outline Drawings P O W E R T R A N S IS T O R M O D U L E 10 13 21 2Ì ■ 4 t £ : Features High Arm S hort Circuit Capability • h F E fr'ffii' High D C C urrent Gain • 7 ') — Including F re e w h e e lin g Diode

Contextual Info: 43G 2271 Q 053b35 3Ô 5 « H A S H a rris S E M I C O N D U C T O R 2N7306D, 2N7306R £ faJ REGISTRATION PENDING Currently Available as FRE460 D, R, H . Radiation Hardened N-Channel Power MOSFETs April 1994 Features Package • 12A, 500V, RDS(on) = 0.410£2

Contextual Info: NATIONAL S E W C O N t LOGIC faJE II • b501122 ÜÜ74777 b“)3 EHNational mm Semiconductor 54AC/74AC74 • 54ACT/74ACT74 Dual D-Type Positive Edge-Triggered Flip-Flop General Description The ’AC/'ACT74 is a dual D-type flip-flop with Asynchro­ nous Clear and Set inputs and complementary (Q, Q) out­

Contextual Info: A dvanced APT8065BVFR pow er Te c h n o lo g y 800V POWER MOS V 13A 0.650Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

max4440

Contextual Info: APT10086BVFR A dvanced w Tæ p o w e r Te c h n o l o g y iooov i3a 0.8600 POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

IRFBC32

Contextual Info: HE D I 4Û5S4SE □□Oôfc.42 □ | Data Sheet No. PD-9.482B INTERNATIONAL RECTIFIER _ IN T E R N A T IO N A L R E C T IF IE R [ l O R I REPETITIVE AVALANCHE AND dv/dt RATED* IRFBC30 IRFBC32 HEXFET TRANSISTORS N -C H A N N E L 600 Volt, 2.2 Ohm HEXFET

Contextual Info: A dvanced APT5020BVFR pow er Te c h n o lo g y 500V POWER MOS V 26A 0.200Í2 FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: A dvanced PO W ER Te c h n o lo g y APT10050LVFR iooov 21 a o.sooq POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT5010LVFR A dvanced pow er Te c h n o lo g y 5 0 0 V POWER MOS V 4 7 A 0 .1 0 0 Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

5017B

Abstract: DIODE TH 5 N
Contextual Info: A P T 5017B V F R A dvanced PO W ER Te c h n o lo g y 500v POWER MOS V 30a 0.170s 2 FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT8030LVFR

Contextual Info: APT8030LVFR A dvanced PO W ER Te c h n o lo g y soov 27A 0 .300Q POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Diode FAJ 32

Abstract: diode c604 st c608 A diode IRFPF40 IRFPF42 20V n-Channel Power MOSFET c608 e diode irf 607 diode lg 47a 7A, 100v fast recovery diode
Contextual Info: h e D I M assM sa G ao flfisa □ | Data Sheet No. PD-9.580A IN TER NAT IO NA L R E C T IF IE R f-AJ INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFPF40 IRFPF4S N-CHANNEL 900 Volt, 2.5 Ohm HEXFET TO-247AC TO-3P Plastic Package

SM 96 diode

Contextual Info: A dvanced PO W ER Te c h n o lo g y A PT10050JVFR iooov POWER MOS V 19 A o.sooq FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

TRANSISTOR D 1765

Contextual Info: Data Sheet No. PD-9.816A INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFV36Q N-CHANNEL Product Summary 400 Volt, 0.20 Ohm HEXFET The HEXFET® technology is the key to International Part Number BVpss Rectifier’s advanced line of power M O S FE T transistors.

sm 126 ao 570

Contextual Info: A d P O T e v a W c n E h c e A d P T 5 1 J V F R R n o l o g y 5 POWER MOS V v 4 4 0 . 1 a o o q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®