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    DIODE F14 Search Results

    DIODE F14 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ24V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Datasheet
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    DIODE F14 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: LTC4229 Ideal Diode and Hot Swap Controller Features Description Ideal Diode and Inrush Current Control for Redundant Supplies n Low Loss Replacement for Power Schottky Diode n Protects Output Voltage from Input Brownouts n Allows Safe Hot Swapping from a Live Backplane


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    LTC4229 24-Lead MSOP-16 DFN-16 LTC4353 LTC4355 SO-16, DFN-14 MSOP-16 LTC4357 PDF

    JH MARKING CODE SCHOTTKY DIODE

    Abstract: DIODE B44 sot sot-23 marking 7z MARKING CODE L4P l4p diode marking B44 MARKING 12p SOT-23 ,MARKING 12p SOT-23 12p sot-23 bat54j
    Contextual Info: ?110flab 0 0 b ö 3 0 S ô71 • P H I N BAT54 SCHOTTKY BARRIER DIODE Silicon epitaxial Schottky barrier diode w ith an integrated p-n junction protection ring in a micro­ miniature SO T-23 envelope intended fo r surface mounting. The diode features especially a low forward voltage.


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    7110flab BAT54 OT-23 OT-23 711065b 00bfl3D7 7Z95211 JH MARKING CODE SCHOTTKY DIODE DIODE B44 sot sot-23 marking 7z MARKING CODE L4P l4p diode marking B44 MARKING 12p SOT-23 ,MARKING 12p SOT-23 12p sot-23 bat54j PDF

    transistor CB 308

    Abstract: SCHEMATIC DIAGRAM monitor adapter 12v 5A bd 2003 fast charge battery 410k
    Contextual Info: LT4351 MOSFET Diode-OR Controller DESCRIPTION FEATURES Low Loss Replacement for ORing Diode in Multiple Sourced Power Supplies n External N-Channel MOSFETs for High Current Capability n Internal Boost Regulator Supply for MOSFET Gate Drive n Wide Input Range: 1.2V to 18V


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    10-pin LT4351 4351fd transistor CB 308 SCHEMATIC DIAGRAM monitor adapter 12v 5A bd 2003 fast charge battery 410k PDF

    SMA905

    Abstract: LDD100-3 ntc pt100 limo FB laser LDD100 SMA905 connector SMA905 CONNECTOR DRAWING diode e 2060 1025-1080nm DIODE 809
    Contextual Info: LIMO FB Series pump HIGH-POWER DIODE LASER • • • • • • • Optical data High brightness laser for, pump applications SMA905 Plug & Play connector for optical fibres Compact dimensions Passively cooled Dual temperature sensor (NTC/PT100) Optional monitor diode


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    SMA905 NTC/PT100) SMA905 LDD100-3 ntc pt100 limo FB laser LDD100 SMA905 connector SMA905 CONNECTOR DRAWING diode e 2060 1025-1080nm DIODE 809 PDF

    DS1608C-472

    Abstract: LT4351 LT4351CMS LT4351IMS MBR0530 Si4862DY transistor CB 308 bd 3451
    Contextual Info: LT4351 MOSFET Diode-OR Controller U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Low Loss Replacement for ORing Diode in Multiple Sourced Power Supplies External N-Channel MOSFETs for High Current Capability Internal Boost Regulator Supply for MOSFET


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    LT4351 10-pin LT4351 4351TA04 LTC1473 LTC4350 LTC4412 4351f DS1608C-472 LT4351CMS LT4351IMS MBR0530 Si4862DY transistor CB 308 bd 3451 PDF

    f12 mosfet

    Abstract: LT4351 LT4351CMS LT4351IMS MBR0530 Si4862DY ceramic capacitor, .1uF diode lt 246
    Contextual Info: LT4351 MOSFET Diode-OR Controller DESCRIPTION FEATURES Low Loss Replacement for ORing Diode in Multiple Sourced Power Supplies n External N-Channel MOSFETs for High Current Capability n Internal Boost Regulator Supply for MOSFET Gate Drive n Wide Input Range: 1.2V to 18V


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    LT4351 10-pin LTC4355 LTC4357 LTC4358 LTC4412 4351fc f12 mosfet LT4351 LT4351CMS LT4351IMS MBR0530 Si4862DY ceramic capacitor, .1uF diode lt 246 PDF

    Contextual Info: LTC4359 Ideal Diode Controller with Reverse Input Protection FEATURES n n n n n n n DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode Wide Operating Voltage Range: 4V to 80V Reverse Input Protection to – 40V Low 9µA Shutdown current


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    LTC4359 LT4256 LTC4260 LTC4223-1/LTC4223-2 4359f PDF

    FDS3732

    Abstract: 3b transistor
    Contextual Info: LTC4359 Ideal Diode Controller with Reverse Input Protection FEATURES DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown Current n Low 150 A Operating Current


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    LTC4359 4359fa com/LTC4359 FDS3732 3b transistor PDF

    LTC4359CMS8

    Contextual Info: LTC4359 Ideal Diode Controller with Reverse Input Protection Features Description Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown Current n Low 150 A Operating Current


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    LTC4359 LT4256-1/LT4256-2 LTC4260 LTC4364 4359fb com/LTC4359 LTC4359CMS8 PDF

    Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $32F5F36%1F&3D132214DDDC 2313FF3613462332364C3


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    DD200S33K2C 13265F PDF

    LTC4357

    Abstract: LT4351 LT4351CMS LT4351IMS MBR0530 Si4862DY
    Contextual Info: LT4351 MOSFET Diode-OR Controller DESCRIPTION FEATURES n n n n n n n n n Low Loss Replacement for ORing Diode in Multiple Sourced Power Supplies External N-Channel MOSFETs for High Current Capability Internal Boost Regulator Supply for MOSFET Gate Drive Wide Input Range: 1.2V to 18V


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    LT4351 10-pin LTC4355 LTC4357 LTC4358 LTC4412 4351fb LTC4357 LT4351 LT4351CMS LT4351IMS MBR0530 Si4862DY PDF

    Contextual Info: LT4351 MOSFET Diode-OR Controller DESCRIPTION FEATURES n n n n n n n n n Low Loss Replacement for ORing Diode in Multiple Sourced Power Supplies External N-Channel MOSFETs for High Current Capability Internal Boost Regulator Supply for MOSFET Gate Drive Wide Input Range: 1.2V to 18V


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    LT4351 4351fb PDF

    Contextual Info: LT4351 MOSFET Diode-OR Controller DESCRIPTION FEATURES n n n n n n n n n Low Loss Replacement for ORing Diode in Multiple Sourced Power Supplies External N-Channel MOSFETs for High Current Capability Internal Boost Regulator Supply for MOSFET Gate Drive Wide Input Range: 1.2V to 18V


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    LT4351 10-pin LTC4355 LTC4357 LTC4358 LTC4412 4351fd PDF

    CMZ5945B

    Abstract: LTC4364IMS-2
    Contextual Info: LTC4364-1/LTC4364-2 Surge Stopper with Ideal Diode FEATURES n n n n n n n n n n n DESCRIPTION Wide Operating Voltage Range: 4V to 80V Withstands Surges Over 80V with VCC Clamp Adjustable Output Clamp Voltage Ideal Diode Controller Holds Up Output Voltage During Input Brownouts


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    LTC4364-1/LTC4364-2 LTC4364-2) 14-Lead 16-Lead LTC4352 LTC4354 LTC4355 LTC4365 436412f CMZ5945B LTC4364IMS-2 PDF

    C35 zener

    Abstract: diode c35 LT3973-3.3 LT3971-3.3
    Contextual Info: Z1 SMA1 . Z1 SMA100 1W power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter 6 @ + =   ;   Absolute Maximum Ratings Symbol Conditions Surface mount diode  ;    = 60 @ + 


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    SMA100 C353G C35 zener diode c35 LT3973-3.3 LT3971-3.3 PDF

    F1400NC

    Abstract: F1400NC18 TOT 2206 transistor calculation of IGBT snubber
    Contextual Info: Provisional Data Data Sheet Issue:- 1a  WESTCODE Date:- 19 Apr, 2001 Absolute Maximum Ratings VOLTAGE RATINGS   IGBT Series/Chopper Diode Type F1400NC18 MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 1800 V VRSM Non-repetitive peak reverse voltage, (note 1)


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    F1400NC18 F1400NC18 F1400NC TOT 2206 transistor calculation of IGBT snubber PDF

    Contextual Info: 1 F I 2 5 B - 6 2 5 0 a S ± / \ , 7 - iE $ ? a - ;U FAST RECO VERY DIODE MODULE : Features • ¡&[sliS.H$f14 A’i'i3i-' • Short Reverse Recovery Time Variety of Connection Menu •mmwt insulated Type ’ Applications Arc-Welders • 7 y —sJW —


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    50/60Hz I95t/R89) PDF

    DIODE S4 29

    Contextual Info: £•< K/Diodes J [ — K i^p p + S ^p p —R i l / L i s t of Diode E quivalent Products f f ^ t t i ; o t ' T £ ± l C - S S L T i ' & ' i ' i I £ 4 ' £ U ST<T>?\ <£< <r'{iJ5CQ±, c?i'„ The characteristics of the equivalent products do not always agree with those of the diode products. Therefore, be


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    PDF

    P785

    Abstract: q345 SUMItomo E670 sumitomo e770 e945 Q355 E645 p945 Q545 p735
    Contextual Info: Sumitomo Electric Industries, Ltd. Part No. : SLT544x-xB Series Document No. : HUW0025001-01C Date of issue : January 31, 2002 Technical Specification of 1.5µm Tunable Laser Diode Module for WDM External Modulation ~ 4 Channels , 20mW ~ SLT544x-xB Series


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    SLT544x-xB HUW0025001-01C 50GHz IRO-D01002 HUW0025001-01A P785 q345 SUMItomo E670 sumitomo e770 e945 Q355 E645 p945 Q545 p735 PDF

    q345

    Abstract: p785 e625 F495 p845 p935 p945 Q500 p705 sumitomo e770
    Contextual Info: Sumitomo Electric Industries, Ltd. Part No. : SLT544x-xA Series Document No. : HUW0025005-01C Date of issue : January 31, 2002 Technical Specification of 1.5µm Tunable Laser Diode Module for WDM External Modulation ~ 4 Channels , 10mW ~ SLT544x-xA Series


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    SLT544x-xA HUW0025005-01C 50GHz IRO-D01002 HUW0025005-01A q345 p785 e625 F495 p845 p935 p945 Q500 p705 sumitomo e770 PDF

    thermistor k275

    Abstract: J955 k365 IC K520 K615 k620 k275 k245 transistor F370 k355
    Contextual Info: Sumitomo Electric Industries, Ltd. Part No. : SLT548x-xA Series Document No. : HUW0025006-01C Date of issue : January 31, 2002 Technical Specification of 1.5µm Tunable Laser Diode Module for WDM External Modulation ~ 8 Channels , 10mW ~ SLT548x-xA Series


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    SLT548x-xA HUW0025006-01C 50GHz IRO-D01002 July/26/2001 thermistor k275 J955 k365 IC K520 K615 k620 k275 k245 transistor F370 k355 PDF

    thermistor k275

    Abstract: k355 k185 J955 k535 J780 J945 J965 K195 k540
    Contextual Info: Sumitomo Electric Industries, Ltd. Part No. : SLT548x-xB Series Document No. : HUW0025007-01C Date of issue : January 31, 2002 Technical Specification of 1.5µm Tunable Laser Diode Module for WDM External Modulation ~ 8 Channels , 20mW ~ SLT548x-xB Series


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    SLT548x-xB HUW0025007-01C 50GHz IRO-D01002 July/2/2001 thermistor k275 k355 k185 J955 k535 J780 J945 J965 K195 k540 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    PDF

    SLT5411-CA-xxxx

    Abstract: e625 SLT5411-CB SUMItomo E670 SLT5411-CA slt5411-cb-xxxx sumitomo e770 F620 Datasheets E625 F305
    Contextual Info: Sumitomo Electric Industries, Ltd. Part No. : SLT5411/SLT5413 Series Document No. : HUW9723037-01H Date of issue : February 22, 2000 Technical Specification of 1.5µm DFB Laser Diode Module for WDM External Modulation SLT5411/SLT5413 series Sumitomo Electric Industries, Ltd.


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    SLT5411/SLT5413 HUW9723037-01H SLT5411-CA-xxxx e625 SLT5411-CB SUMItomo E670 SLT5411-CA slt5411-cb-xxxx sumitomo e770 F620 Datasheets E625 F305 PDF