DIODE EQUIVALENT Search Results

marking SA

Contextual Info: Ordering number : ENN7029 SBS806M Schottky Barrier Diode SBS806M 30V, 0.5A Rectifier Applications Package Dimensions unit : mm 1310 • 2.1 3 2 1 0.65 5 2.0 4 1 : Anode Diode 1 2 : No Contact 3 : Anode (Diode 2) 4 : Cathode (Diode 2) 5 : Cathode (Diode 1)

Contextual Info: Ordering number : ENN7029 SBS806M Schottky Barrier Diode SBS806M 30V, 0.5A Rectifier Applications Package Dimensions unit : mm 1310 • 2.1 3 2 1 0.65 5 2.0 4 1 : Anode Diode 1 2 : No Contact 3 : Anode (Diode 2) 4 : Cathode (Diode 2) 5 : Cathode (Diode 1)

diode equivalent

Abstract: JANTX1N3293
Contextual Info: IO R Government/ Space Products Diode, JAN Equivalent Diode, JAN Equivalent Diode 150 Amps P u t H um bert IR 80-1243 80-1243R Industrial Currant Rating A M ilitary Current Rating (A) Com pliant to M IL-8-19S00 Q ualification 150 150 /246 19000-410-84 150

OP265

Abstract: OP265AA OP265AB OP265AC OP265AD OP505 OP535
Contextual Info: Plastic Infrared Emitting Diode OP265AA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265AA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is

OP265FAD

Abstract: GaAs 850 nm Infrared Emitting Diode OP265 OP505 OP535 OP265FAA OP265F
Contextual Info: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is

TEMPERATURE CONTROLLER with pid

Abstract: temperature control using pid controller PT-1000 sensor RTD PT-100 blue Laser-Diode PT1000 thermistor DB15F lm335 equivalent PT-100 RTD 3 wire sensor rosemount pt 100 temperature sensor
Contextual Info: www.thinkSRS.com Laser Diode Controller LDC501  Laser diode controller with integrated temperature controller LDC501 Laser Diode Controller Laser Diode Controller • 500 mA low-noise current source · Low drift <10 ppm/°C · 1.1 MHz modulation · CC & CP mode dynamic switching

Contextual Info: 6R1MBi75P-160 Diode Module Diode Module with Brake Diode:1600V / 75A, IGBT:1400A/50A Features • Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

free IR circuit diagram

Abstract: diode marking DEC forward reverse diagram 1SS356 DIODE MARKING 1M 1SS356 MARKING band switching diode 1ss356 equivalent
Contextual Info: 1SS356 Surface Mount Band Switching Diode Band Switching Diode P b Lead Pb -Free 100m AMPERES 35 VOLTS Features: * Low Diode Capacitance : 1.2pF(Max.) * Low Diode Forward Resistance : 0.9Ω(Max.) * Low Reverse Current : IR = 10nA(Max.) * Small outline Surface mount SOD-323 Package

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

BAR66

Abstract: BA592 BA595 BA597 BA885 BAR14 BAR63-03W BAR64 BAR65-03W
Contextual Info: Application Note No. 058 Silicon Discretes Dr. Reinhard Gabl Predicting Distortion in Pin-Diode Switches This note describes the origin of distortion in pin-diode switches. Distortion is related to physical parameters of the diode and operating conditions and thus can be minimized by an appropriate diode

Contextual Info: SANKEN ELECTRIC CO., LTD. ES1F 1. Scope The present specifications shall apply to Sanken silicon diode, ES1F. 2. Outline Type Silicon Rectifier Diode Mesa type Structure Resin Molded Applications Pulse Rectification, etc Flammability: UL94V-0 (Equivalent)

FML-G13S

Contextual Info: SANKEN ELECTRIC CO., LTD. FML-G13S 1. Scope The present specifications shall apply to Sanken silicon diode, FML-G13S. 2. Outline Type Silicon Rectifier Diode Structure Resin Molded Applications High Frequency Rectification Flammability : UL94V-0 Equivalent

DBES105A

Abstract: SAS diode
Contextual Info: DBES105a Flip-Chip Dual Diode GaAs Diode Description The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency. This flip-chip dual diode has been designed for

FMN-G14S

Contextual Info: SANKEN ELECTRIC CO., LTD. FMN-G14S 1. Scope The present specifications shall apply to Sanken silicon diode, FMN-G14S. 2. Outline Type Silicon Rectifier Diode Structure Resin Molded Applications High Frequency Rectification Flammability : UL94V-0 Equivalent

IDG 600

Abstract: M61880FP 20P2N-A M61880
Contextual Info: M61880FP Laser Diode Driver/Controller REJ03F0068-0100Z Rev.1.0 Sep.19.2003 Description The M61880FP is a laser diode driver/controller that performs drive and laser power control of a type of semiconductor laser diode in which the semiconductor laser diode anode and monitoring photodiode cathode are connected to the stem.

FMG-G26S

Contextual Info: SANKEN ELECTRIC CO., LTD. FMG-G26S 1. Scope The present specifications shall apply to Sanken silicon diode, FMG-G26S. 2. Outline Type Silicon Rectifier Diode Structure Resin Molded Applications High Frequency Rectification, etc. Flammability: UL94V-0 Equivalent

Contextual Info: SANKEN ELECTRIC CO., LTD. EG1A 1. Scope The present specifications shall apply to Sanken silicon diode, EG01. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification Flammability : UL94V-0 Equivalent 3. Absolute maximum ratings

FMB-2204

Contextual Info: SANKEN ELECTRIC CO., LTD. FMB-2204 1. Scope The present specifications shall apply to Sanken silicon diode, FMB-2204. 2. Outline Type Silicon Schottky Barrier Diode Structure Resin Molded Applications High Frequency Rectification Flammability: UL94V-0 Equivalent

EM01

Contextual Info: SANKEN ELECTRIC CO., LTD. EM01 １ Scope The present specifications shall apply to Sanken silicon diode, EM01. ２ Outline Type Silicon Rectifier Diode Mesa type Structure Resin Molded Applications Commercial Frequency Rectification, etc Flammability: UL94V-0 (Equivalent)