DIODE ED 99 Search Results

Contextual Info: MJD122 NPN SILICON DARLINGTON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1“ Suffix)

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSH200 D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1“ Suffix)

Contextual Info: MJD117 PNP SILICON DARLINGTON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1“ Suffix)

ZENER 6.2V DO-214AC

Contextual Info: SML4728 thru SML4763A Surface Mount Zener Diode Zener Voltage – 3.3 to 91.0 Volts Steady State Power – 1.0 Watt DO-214AC ed e d n Exte e Rang g a t l Vo 0.065 1.65 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152)

X9522

Abstract: X9522V20I-A X9522V20I-B X9522V20IZ-A X9522V20IZ-B
Contextual Info: I GNS DE S W E T OR N DUC ED F TE PRO 9520 D N TITU 2329, X MME ECO E SUBS ISData L2 Sheet R T 26, NO I BL 3 S 2 S 2 PO SL 20, I X958 X9522 Laser Diode Control for Fiber Optic Modules January 3, 2006 FN8208.1 DESCRIPTION Triple DCP, Dual Voltage Monitors

IN5288

Abstract: IN5305 IN5309 diode 0107MA IN5309 1N5298 equivalent CNS 022 1N5305 equivalent 1N5286 IN5283
Contextual Info: Microsemi Corp. J T he diode exp erts j SANTA ANA, CA SCOTTSDALE, AZ For more information call: 602 941-6300 / IVI*5 28 3 th ru M *5314 a n d C f5 2 8 3 th ru C f5 3 1 4 HIGH RELIABILITY CURRENT REGULATOR DIODES Features (* ) • A va ila b le as screen ed e q u iva le n ts using p refixes n oted b elo w :

FMMD914

Abstract: FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70
Contextual Info: * FERRANTI semiconductors F M M D 914 High Speed Sw itching Diode D E S C R IP TIO N These devices are intend ed fo r high speed s w itc h in g ap p licatio n s. Encapsulated in th e p op u lar S O T -2 3 package th ese devices are designed s p e c ific a lly fo r use in th in and th ic k film

Contextual Info: • MbflbEEb 0 0 ü l 7 0 b 7ST « I X Y n ix Y S MDD72 Diode Modules lTAV = 2 x 99 A i < < VRRM = 400-1800 V 500 700 900 1300 1500 1700 1900 Vrrm V Type Version 1 B 400 600 800 1200 1400 1600 1800* MDD72-04N1 MDD72-06N1 MDD72-08N1 MDD72-12N1 MDD72-14N1 MDD72-16N1

1n728 DO-4

Abstract: in823 IN751 in822 mic in2829 1N2163 1N8272 1N736 in821a in823a
Contextual Info: V . X S ¡1 II *< 5: x =3£= tt — « S. =/>2= C V 999 Il C O 't r s o o o o o o o o o o o d d r t cd in o od in c\i in r s 00 C l ^ C SË i II o o o NÛ-? o o o OOO q o ° odd o o o «5SO 00 O'. CM cm o r s in t—I CM CM a> r s •-i in o o o o o o n i co o

D1G-22-8-30-DD

Contextual Info: Photovoltaic M OSFET D river with active Dynam ic Discharge* DIG-11-8-30-DD DIG-12-8-30-DD DIG -22-8-30-DD Dionics Inc. 65 Rushmore Street W estbury, New York 11590 516 997-7474 FAX: (516) 997-7479 ♦FEATURES* * * * * * * * * •APPLICATIONS* FAST TURN OFF, ACTIVE GATE DISCHARGE

Contextual Info: Si GEC P L E S S E Y j a n u a r y i 997 S E M I C O N D U C T O R S DS4680-4.1 TA329.Q ASYMMETRIC THYRISTOR APPLICATIONS KEY PARAMETERS 1400V DRM 370A -T RMS 2000A ^SM dVdt 1 0 0 0 V / ( is 1000A /H S dl/dt • High Frequency Applications. ■ High Power Choppers And Inverters.

zener alternator rectifier

Abstract: 5551T
Contextual Info: DESIGN TIP DT 99-6 International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA Intelligent Power Switches IPS : Operation in an Automotive Environment By X. de Frutos and A. Mathur TOPICS COVERED Ground loss Ground offset Voltage peaks Reverse battery conditions

CDST-56-G

Abstract: CDST-70-G CDST-99-G sk sot-23
Contextual Info: COAICHII» Small Signal Switching Diodes SMQDIodes S pocialisi CDST-99-G/ 70-G/ 56-G Reverse Voltage: 70 Volts Forward Current: 200mA RoHS Device Features D es ig n ed for m ounting on sm all s u rfa ce . High s p e ed sw itching. High m ounting capab ility, strong surge

sn76881

Abstract: SN76882 sfb 455 sn76832n sn7689 tms 1000 Bf sn 881 76831N24
Contextual Info: SN76741N/SN76751N 1 MAIN FEATURES — Serial data encoding for TMS 1000 or TMS 9940 decode. — 64 + 64 Channel capacity. — Direct drive of IE emitters. — — Ceramic resonator controlled oscillator. 6 to 9 volt battery operation.* — Automatic m^rrm transmission of four codes.

1N725

Abstract: 1N937 1N743 IN821 in825 1N717 1N718 1N719 1N721 1N722
Contextual Info: 0Os" vO0s OU O V . X S o '' c S ov' d ' - i ' ' 5^0? in in in <\l C\J CM ¡1 II S. 999 5: x =3 £= = 2= C/> V O CO * uE £ =£ o o o «Si -g< = > ro in C CM CO »3- o OO O q o ° o o o odd o o o «5SO o o o NÛ-? o r s in o O o t— I— h- G O O O O O O \ 0 O'-

H8508

Contextual Info: Na l i o n a l s emi con d u i- t o r S e ptem be r 1 996 ADVANCE INFORMATION ND H8508P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SuperS0T™ -8 P-Channel enhancem ent mode power field effect transistors are produced using National's

COILTRONICS 407 241-7876

Abstract: OS-CON 10SA220K 10SA220K C9-C14 alco alco switch sanyo OS-CON SA 4435D DIFS4 SW-DIP-4
Contextual Info: SÌ9140DB T em ic S e m i c o n d u c t o r s Bill of Material Part Used Designators Part Type Case Size 1 3 0.1 nF C 7, CIO , C l l 0805 2 1 1.5 LI Inductor 3 1 1 nF/25 V C eram ic C 12 1206 4 1 4.7 k R 11 0805 5 1 4 .99 k. 1% R2 0805 6 1 5.6 pF C8 0805 7

transistor 632p

Abstract: 632p
Contextual Info: F A I R C H I L D M ICDNDUCTQ R Junel 996 tm NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS

smd TRANSISTOR code marking 2F

Abstract: SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD 9bb IR 1838 T smd marking dt2 TRANSISTOR SMD MARKING CODE kh irm 1838 IR 1838 3v IR 1838 T datasheet IR 1838
Contextual Info: Preliminary Data Sheet PD-20605 rev. A 01/99 HFA16TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits

Contextual Info: TOSHIBA {DISCRETE/OPTO} TÎ 9097250 TOSHIBA DISCRETE/OPTO DE | T m 7 2 S D 99D 16896 T O S H IB A SEMICONDUCTOR F IE L D EFFEC T D ~p- 3 e)-1 T R A N S IS T O R Y T F 8 3 2 S IL IC O N TECHNICAL DATA N C H A N N EL MOS T Y P E (Æ -M O S IE ) INDUSTRIAL APPLICATIONS

HFA16TB60

Abstract: HFA20TB120 FA08TB60 hfa16tb60c HFA15TB60 Telex-95219
Contextual Info: International [ « ] Rectifier i r ylPPUCKTION NOTES PUBLISHED BY INTERNATIONAL RECTIFIER. 233 KANSAS STREET. EL SEGUNDO. CA 90245 310 322-3331 AN-993 Utilizing HEXFRED Ultra-Fast Recovery Diode Die In Assembly (HEXFRED is a trademark of International Rectifier)

0.2MF CAPACITOR

Abstract: TIL111 equivalent til111 DI-425
Contextual Info: D DIONICS INC. DI-425 65 RU SH M O RE S T R E E T W EST B U R Y , NEW Y O R K 11590 5161 997-7474 HIGH VOLTAGE Dl 425 SW ITC H ED A.C. B R ID G E C IR C U IT Monolithic Silicon Dielectrically Isolated Integrated Circuits The Dl 425 is a high voltage, monolithic dielec­

B0004

Abstract: CDSV3-16-G CDSV3-56-G CDSV3-70-G CDSV3-99-G v50s
Contextual Info: COAICHII* Small Signal Switching Diodes CDSV3-99-G/ 70-G/ 5 6 -G /16G % Reverse Voltage: 75 Volts Forward Current: 200mA RoHS Device Features SO T-323 D es ig n ed fo r m ounting on sm all s urfa ce . High s p eed sw itching. 0.059 1.80 High m ounting cap ab ility, strong surge

transistor 20607

Abstract: smd TRANSISTOR code marking 2F TRANSISTOR SMD MARKING CODE 2x 20607 SMD TRANSISTOR MARKING 9bb PD-20607 TRANSISTOR SMD MARKING CODE DM TRANSISTOR SMD 2x t HFA08TB6 TRANSISTOR SMD 2X K
Contextual Info: Preliminary Data Sheet PD -20607 rev. A 01/99 HFA08TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits