DIODE ED 85 Search Results

RK105

Contextual Info: Bulletin 127133 rev. D 09/97 International IQ R Rectifier IRK.105 SERIES THYRISTOR/ DIODE and NEW ADD-A-pak Power Modules THYRISTOR/ THYRISTOR Features • Electrically isolated: DBC base plate ■ ■ 3500 VRMg isolating voltage Standard J ED EC package

DSAIH0002570

Contextual Info: B K C INTERNATIONAL Ü3E D | 117^03 □ □ □□ 13 ? _ Type NO.1N140_ G O LD BO N D ED G ER M A N IU M DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681-0392 TeleFax (617) 681-9135

DSAIH0002548

Abstract: 1N314
Contextual Info: B K C INTERNATIONAL 03E ] | HVTTöB □□00175 ‘i £ _ Type No. 1N314_ T - * t - o 7 G O LD BO N D ED G ER M A N IU M DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617) 681-0392 Tele Fax (617) 681-9135

LG direct drive motor

Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
Contextual Info: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W

stetron

Contextual Info: V A R IS TO R ^^v , , .' , '’ -V y * ; $ h \ } T •'•'•. ' ■ ■ ?‘- - * ■ . . ■ % Diffused Junction Silicon Types and Sili.çon Carbide Types D IFFU S ED J U N C T IO N S ILIC O N VA R IS TO R S STETRON diffused junction Silicon varistors are special diode

EE-25 transformer

Abstract: Transformer EE-25 Transformer EE-25 100 EE-25 200 6 transformer APT30D100B APT30D80B APT30D90B CR diode transient
Contextual Info: ADVANCE] POWER TECHNOLOGY b3E » • O ZS ?1^ 0GQlQ3Li 213 H A V P A d va n c ed P o w er Tec h n o lo g y 1 - Cathode 2 - Anode Back of Case-Cathode APT30D100B APT30D90B APT30D80B 1000V 900V 800V 30A 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS

Infrared Emitting Diode

Abstract: LN189L
Contextual Info: Panasonic Infrared Light Emitting Diodes LN189L GaAIAs Infrared Light Emitting Diode Light source for distance m easuring system s Il 0.4+0.1 M ark R ed • v 0 .6+ 0.1 F eatures - • H igh-pow er output, high-efficiency : P Q = 5.5 mW (typ.) • Fast response and high-speed modulation capability : tr, t( = 20 ns (typ.)

X9522

Abstract: X9522V20I-A X9522V20I-B X9522V20IZ-A X9522V20IZ-B
Contextual Info: I GNS DE S W E T OR N DUC ED F TE PRO 9520 D N TITU 2329, X MME ECO E SUBS ISData L2 Sheet R T 26, NO I BL 3 S 2 S 2 PO SL 20, I X958 X9522 Laser Diode Control for Fiber Optic Modules January 3, 2006 FN8208.1 DESCRIPTION Triple DCP, Dual Voltage Monitors

1N 3000 DIODE

Abstract: 14R7 Scans-0017298 general electric
Contextual Info: 14R7 14R.7 PAGE I Description and Rating DUPLEX-DIODE PENTODE GENERAL DESCRIPTION Pr i n c i p a l Application: semi-remote-cutoff combined fi er detector, The I4R7 pentode for us e as a automatic-voIume-controI and audio amplifier. a l s o be us ed as a r a d i o - f r e q u e n c y or i n t e r m ed ia te f r e q u e n c y a m p l i f i e r . Th e tube fe at ur es low co upling

12sR7

Abstract: 12sr7, tube 500 watts audio amplifier diagram 12sr7 tube rs tube Scans-0017290
Contextual Info: 12SR7 PAGE I 12SR7 Description and Rating DUPLEX-DIODE TRIODE GENERAL DESCRIPTION Pr in ci pa l A p p l i c a t i o n : Th e ty pe I2SR7 is a d u p l e x diode medi um -m u triode ampl if ie rdesi gn ed for use as a c o m b i n e d d e t e c t o r , a u d i o a m p l i f i e r ,

Contextual Info: VER PF -’ - F l . O P E B 32EI FEATURES • Up to 1.25Gb/s operation ■ 75mA peak drive current ■ Separate modulation control ■ Separate master reset for laser safety T he S Y 1 0 0 E L 1 0 0 1 is a high sp e ed current so u rce for driving a sem iconductor lase r diode in optical transm ission

6DM4

Abstract: EI 38-12 000D 30-FRAME rs tube RECTIFIER DIODE 5000A
Contextual Info: 6DM4 TUMO-SOL \ DIODE . 1.188 MAX UN I P O T E N T I A L CAT HOD E FOR DA M P E R S E R V I C E T E L E V IS IO N IN R E C E IV E R S 3 . 250 “ T -9 MAX 3.812 MAX ANY M O U N T IN G P O S I T I O N w 80TT0M BASING 0 ED EC GLASS SHORT ICG BULB INTERMEDIATE

tube 7c6

Abstract: 7C6 TUBE
Contextual Info: 7C6 TUNG'SOL ». DOUBLE DIODE TRIO D E T-9 COATED U N IP O T E N T IA L CATHODE MAX 9 2_5 " 32 ¿ 6 .3 VOLTS 0 .1 5 0 AMPERES AC OR DC - ' 16 IN C I R C U I T S WHERE THE CATHODE I S NOT D I R E C T L Y C ONNECT ED TO THE H E A T E R , THE P O T E N T I A L D I F F E R E N C E B E T W E E N

5082-2565

Abstract: hp 2817 hp 5082 2207 S3H 02 diode U1Z 07 u1z 99 hp 5082 2817 5082-2500 5082-2711 5082-2766
Contextual Info: COMPONENTS 5082 -2200 / 01/ 0 2 /0 3 5082 - 2207 / 08 / 09/10 5082 2 7 6 5 /6 6 5082 - 2774/75 5082 - 2 7 85/8 6 5082 - 2 7 9 4 /9 5 SCHOTTKY BARRIER DIODES & HIGH CONDUCTANCE DIODES H E W L E T T PACKARD SCHOTTKY BARRIER DIODES FOR STRIPLINE, MICROSTRIP MIXERS

17300A

Contextual Info: VRRM = 200 V IFAVM = 11000 A IFRMS = 17300 A IFSM = 85000 A VF0 = 0.75 V rF = 0.020 mΩ Ω Rectifier Diode 5SDD 0120C0200 Doc. No. 5SYA1157-01 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance

schematic diagram PWM solar charger - 10A

Abstract: mppt Charge Controller design and circuit mppt charge controller schematic mppt solar charger schematic 12V Solar Charge Controller mppt ic microcontroller based solar charger Solar mppt schematic mppt solar charger schematic schematic diagram MPPT 12v Solar Charge Controller PWM series type
Contextual Info: AN2946 Application note Solar-LED streetlight controller with 25 W LED lamp driver and 85 W battery charger based on the STM32F101Rx Introduction The solar-LED streetlight controller described in this application note is designed to achieve an 85 W solar energy battery charger and a 25 W LED lamp driver. During the daytime the

Contextual Info: SEMIKRON Vrsm V rrm V Rectifier Diodes Ifav sin. 180; Tease - •■• 4000 A (50 °C) 200 400 600 SKN 4000/02 SKN 6000/02 SKN 4000/04 SKN 6000/04 SKN 4000/06 SKN 6000/06 Symbol Conditions Ifav sin. 180;Tcase= 50°C;DSC1) = 85 °C;DSC1) = 100 °C;DSC1)

intel core i3 MOTHERBOARD CIRCUIT diagram

Abstract: intel i5 MOTHERBOARD pcb CIRCUIT diagram PC MOTHERBOARD CIRCUIT diagram for i3 core i5 MOTHERBOARD CIRCUIT diagram
Contextual Info: P A I R C H I I - D www.fairchildsemi.com SEMICONDUCTOR RC5031 Adjustable Switching Regulator Description • H igh pow er sw itched-m ode D C -D C controller can source in excess o f 13A • O utput voltage adjustable from 1.5V to 3.6V • 85% efficiency

mbr3545

Abstract: MBR3535 MBR3545H
Contextual Info: MBR3520 MBR3535 MBR3545, H, HI M M O T O R O L A S E M IC O N D U C T O R S PO B O X 20912 • P H O E N IX . A R I Z O N A 85036 SCHOTTKY BARRIER RECTIFIERS S W IT C H M O D E P O W E R R E C T IF IE R S 3 5 A M P ER E S 2 0 to 4 5 VOLTS . . . using a platinum barrier metal in a large area metal-to-silicon

diode E 1110

Abstract: pgr 1110 e 1110 diode
Contextual Info: PGR 1110 Compact PIN Receiver This compact P IN receiver is especially suited for F IT L Fiber In The Loop and similar short and medium haul telecom applications. The module includes a InGaAs PIN diode and is optimizedfor -40 to + 85 °C operation. PGR 1110/R

Contextual Info: SKiiP 37NAB066V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter K:BU *: *: *:-_ $U P FE Q:N 0'7&11 .2 &%681& 1?& 858&4 $1 P FE ¥MT] Q:N $S P HET Q: $1 P FE ¥MT] Q:N $S P HME Q: 2? P H L1 K+BU Diode - Inverter MiniSKiiP 3

K3qa

Contextual Info: SKiiP 13NAB066V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper J:BT *: *: *:._ $- N FEP:H 1'7&- /2 &%68-& -?& 858&4 $- N FE [¥L] P:H $S N OEL P: $- N FE [¥L] P:H $S N O¥E P: 2? N O K- J+BT Diode - Inverter, Chopper

Contextual Info: Na l i o n a l s e m i c o n d u i- t o r S e p te m b e r 1 9 9 6 ADVANC E IN FO R M A TIO N N D H 8505N Dual N-Channel Enhancement Mode Field Effect Transistor Features General Description SuperS0T™-8 N-Channel enhancement mode power field effect transistors are produced using

Contextual Info: □IXYS MWI 50-12 A7 Advanced Technical Information IGBT Modules Sixpack IC25 v ces = 85 A = 1200 V V C E s a t ty p . = 2 . 2 V Features Symbol Conditions Maximum Ratings V CES Tj = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 20 k£i 1200 V