DIODE E 1205 Search Results

NDL5407P

Contextual Info: PRELIMINARY DATA SHEET PHOTO DIODE MODULE NDL5521P. NDL5521P1, NDL5521P2 2.5 Gb/s OPTICAL FIBER COMMUNICATIONS <t>50 n m InGaAs AVALANCHE PHOTO DIODE WITH MMF DESCRIPTION NDL5521P, NDL5521P1 and NDL5521P2 are InG aAs avalanche p h o to d io d e m o d u le s w ith m u ltim o d e fib e r. They are

Contextual Info: Discrete POWER & Signal Technologies S E y S O N P U C T D R ;W MMBD7000 High Conductance Ultra Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics. Absolute Maximum RatitlQS TA = 25°C unless otherwise noted Param eter S ym bol V alu e

DIODE T50

Abstract: MMBD7000 mmbd1201 MA670
Contextual Info: MMBD7000 & Discrete POW ER & Signal Technologies National Semiconductor’ MMBD7000 High Conductance Ultra Fast Diode Sourced from P roce ss 1P. Se e MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol ta^scum essotnemisenoted Parameter Units

IGBT K 40 T 1202

Abstract: 40 t 1202 igbt BUP306D
Contextual Info: SIEMENS BUP306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 306D VCE h 1200V 23A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code

diode e 1205

Abstract: mmbd1201
Contextual Info: tß S e m i c o n d u c t o r " MMBD1201 /1203 /1204 /1205 ÜL 24 " E 0 " M A R K IN G SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units Wiv Working Inverse Voltage

MA760

Abstract: 1N4150 FDLL4150
Contextual Info: SEMICONDUCTOR tm 1N4150 / FDLL4150 C O LO R B A N D M AR KING D E V IC E FD LL4150 1S T B A N D 2N D BAND B LA C K ORANGE High Conductance Ultra Fast Diode Sourced from Process 1R. See M MBD1201-1205 for characteristics. Absolute Maximum Ratings* t a = 2 5 ° C u nless o th e rw ise noted

DBB04

Abstract: DBB04C DBB04G 2793a
Contextual Info: O rd e rin g n u m b e r: EN2793A DBB04 N0.2793A Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier F e a tu re s •Single-phase bridge rectifier use • Plastic molded structure • Peak reverse voltage : Vrm = 200 to 600V ■Average rectified current : Io = 0.4A

BD1201

Contextual Info: BE :?VlICON D U C 'TP R MMBD7000 CONNECTION DIAGRAM SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. See M M BD1201-1205 for characteristics. Absolute Maximum Ratings4 Symbol T A = 2 5°C unless o th e rw ise noted Parameter Value Units W IV

Contextual Info: HL1221AC Laser Diode Description H L 1221A C is a 1.2 fim In G aA sP laser diode with d o u b le h etero ju n ctio n stru ctu re. It is su itable as a light source in fiberoptic c o m ­ m u n icatio n s and various o th er types o f optical e q u ip m en t.

Contextual Info: S S M ÎC O N D Ü O T O H 1N4454 DO-35 High Conductance Ultra Fast Diode Sourced from Process 1R. See M M BD1201-1205 for characteristics. Absolute Màximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted Parameter Value Units 50 V Average Rectified Current

1N4454

Contextual Info: B IE M ÌC O N P U C T O R :>> 1N4454 DO-35 High Conductance Ultra Fast Diode Sourced from Process 1R. See M MBD1201-1205 for characteristics. Absolute Maximum RâtiriÇJS T A = 2 5 ° C unless o th e rw ise noted Parameter Symbol Value Units w lv Working Inverse Voltage

fairchild 1P

Contextual Info: S E M IC O N D U C T O R MMBD1201 /1203 /1204 /1205 CONNECTION f 1201 DIAGRAMS 3 1 2NC 1204 t MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 * 1 2 3 I I SOT-23 1203^ 3 * ^ * + 1 ; 205 * J 2 High Conductance Ultra Fast Diode S o u rce d fro m P roce ss 1P.

Contextual Info: Discrete POWER & Signal Technologies t _8 i iHAfrltAif Ï ¡p^j. ;S £~!M i O D N P U C ' T O R 1N4454 DO-35 High Conductance Ultra Fast Diode Sourced from Process 1R. See M M BD1201-1205 for characteristics. Absolute Maximum RâtinÇJS T A = 2 5 ° C unless o th e rw ise noted

diode 744

Abstract: MMBD1201 tu marking 744 diode f1201 diode e 1205 MMBD1203 MMBD1504A MMBD1505A F-1201
Contextual Info: S e m i c o n d u c t o r " MMBD1201 /1203 / 1204 /1205 M 24 "m SOT-23 n r M A R K IN G M M BD 1201 M M BD1203 24 26 M M BD 1504A M M BD 1505A 27 28 High Conductance Ultra Fast Diode Sourced from Proce ss 1 P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CMBD1201, 1202, 1203 CMBD1204, 1205 SOT-23 Formed SMD Package SILICON PLANAR EPITAXIAL HIGH SPEED DIODES CMBD1201, 1202, are all single diodes CMBD1203 is a dual diode, in series

Fet irfz44n

Contextual Info: PD - 91318B International IQ R Rectifier IR F R /U 1205 HEXFET Power MOSFET • • • • • Ultra Low O n-R esistance Surface M ount IRFR 1205 Straight Lead (IRFU 1205) Fast Switching Fully Avalanche Rated Vdss = 55V RüS(on) = 0.027Q |D = 44 A Description

BD120

Contextual Info: MlC O N D U C T O R D iscrete POWER & S ig n a l Technologies i MMBD1201 /1203 /1204 /1205 CONNECTION f' 1201 DIAGRAMS 3 ^ r1 * * 1 3 2 NC 1204 1203 1 2 3 3 I 1205 MARKING SOT-23 M M B D1201 24 M M B D1204A 27 M M B D 1203 26 M M B D1205A 28 V J 2 ’ High Conductance Ultra Fast Diode

1202 smd diode

Abstract: 304N diode e 1205 smd 1203 5 DSA0010574 CMBD1201 CMBD1202 CMBD1203 CMBD1204 CMBD1205
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBD1201, 1202, 1203 CMBD1204, 1205 SILICON PLANAR EPITAXIAL HIGH SPEED DIODES CMBD1201, 1202, are all single diodes CMBD1203 is a dual diode, in series

1207A

Abstract: lcd 3901
Contextual Info: A ugust 1996 t o r LM1205A/LM1207A 130 MHz/85 MHz RGB Video Amplifier System with Blanking The LM 1205A/LM 1207A is a very high frequency video am ­ plifier system intended fo r use in high resolution RGB m oni­ tor applications. In addition to the three m atched video am ­

mmbd1201-1205

Abstract: 1N4454 mmbd1201
Contextual Info: 1N4454 ta Discrete POW ER & Signa l Technologies National Semiconductor" 1N4454 High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Symbol Value

spark killer

Contextual Info: O rdering num ber: EN 1831B LB 1205 N0.1831B Monolithic Digital IÇ High-Voltage, High-Current Darlington Driver Functions and Features . 4-unit, high-voltage 65V , high-current (1.5A) Darlington driver . PNP input type (Low active) . On-chip spark killer diodes

2SK1205

Contextual Info: MM1b205 GQ13253 022 • H I T M 2 S K 1205 SILICON N-CHANNEL MOS F E T HIGH SPEED POWER SWITCHING 1. Gate 2. Drain F lan g e 3. Source (D im ensions i ■ FEATURES • • • • • Low On-Resistance High Speed Switching Low Drive Current No Secondary Breakdown

D4148

Abstract: D4148 be 1414-8C D4148CC
Contextual Info: SEM ICONDUCTOR tm MMBD4148 / SE/ CC/ CA CONNECTION DIAGRAMS / 3 j 4 1 ^ 1 2 NC D5 48C A D6 M M BD4148SE D4 1 V 1 4148SE A 2 3 | 3 | 4148C C M M B D4148CC 3 . 1 4148C A 2J High Conductance Ultra Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics.

MBD7000

Abstract: BD7000
Contextual Info: S S M iC C N Q L ÌC T G R MMBD7000 CONNECTION SOT-23 DIAGRAM y 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings' Symbol TA = 25 °C unless otherwise noted Parameter Value Units W|v