DIODE DB3 Search Results

Contextual Info: MMBD2004/C/A/S Surface Mount Switching Diode * “G” Lead Pb -Free SWITCHING DIODE 225mAMPERS 300VOLTS Features: *Fast Switching Speed *Surface Mount Package Ideally Suited for Automatic Insertion *High Conductance *For General Purpose Switching Applications

Contextual Info: MMBD2004/C/A/S Surface Mount Switching Diode * “G” Lead Pb -Free SWITCHING DIODE 225mAMPERS 300VOLTS Features: *Fast Switching Speed *Surface Mount Package Ideally Suited for Automatic Insertion *High Conductance *For General Purpose Switching Applications

ksd303

Abstract: SDB310WMU ksd 30 KSD30
Contextual Info: SDB310WMU Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. Marking SDB310WMU Package Code DB3 SOT-323 Outline Dimensions unit : mm 2.1±0.1 1.25±0.05 1.30±0.1

Contextual Info: DB3 BIDIRECTIONAL TRIGGER DIODE Reverse Voltage - 32 Volts Power: 150mW FEATURES DO-35 GLASS Small glass structure ensures high reliability VBO:26-36V version Low breakover current High temperature soldering guaranteed 250 C/10 seconds,0.375”(9.5mm) lead length,

Contextual Info: Doc No. TT4-EA-12625 Revision. 3 Product Standards Schottky Barrier Diode DB2X20600L DB2X20600L Silicon epitaxial planar type Unit: mm For high frequency rectification DB3X206K in Mini2 type package 1.6 0.13 2 • Features 2.6 3.5  Low forward voltage VF

Contextual Info: SODDB3/SODDB3T Taiwan Semiconductor Small Signal Product SOD-123 Trigger Diode DIAC FEATURES - Surface Mount Device SOD-123 packaged - VBO=32V DB3 - Max. PD=400mW MECHANICAL DATA - Case: Plastic gull wing SOD-123 package - High temperature soldering guaranteed: 260°C/10s

diac 32 V 5mA

Abstract: Bidirectional Diode Thyristors diac db3 specifications D60 DIAC diode d60 400C diode db3 DIAC 5 VOLT
Contextual Info: DB3 DC COMPONENTS CO., LTD. R THRU RECTIFIER SPECIALISTS DB4 TECHNICAL SPECIFICATIONS OF BIDIRECTIONAL DIODE THYRISTORS DIACS FEATURES * Glass passivalted three-layer for triggering thyristors. * Low breakover current at breakover voltage. * For use in thyristor phase-control circuit for lampdimming,

Contextual Info: DB3X316K Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DB3X316K Product type: Schottky Barrier Diode Parameters *DEVICE=DB3X316K,D * DB3X316K D model *$ .MODEL DB3X316K D + IS=477.23E-9 + N=1.0 + RS=1.6470 + IKF=1.9141 + CJO=8.4129E-12

ksd202

Abstract: SDB310WM ksd2027
Contextual Info: SDB310WM Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. Marking Package Code SDB310WM DB3 SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 2.9±0.1 1.90 Typ.

Contextual Info: DB3X317K Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DB3X317K Product type: Schottky Barrier Diode Parameters *$ .MODEL DB3X317K D + IS=4.4280E-6 + N=1.0123 + IKF=998.99 + RS=0.14971 + ISR=425.08E-9 + NR=1.5000 + BV=40 + IBV=100.00E-6

Contextual Info: Doc No. TT4-EA-12404 Revision. 2 Product Standards Schottky Barrier Diode DB3X209K0L DB3X209K0L Silicon epitaxial planar type Unit: mm 2.9 For high frequency rectification 0.4 0.16 3 • Features 1.5 2.8  Low forward voltage VF  Short reverse recovery time trr

diac DB3 application note

Abstract: DB3 application note DIAC DO35
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON DIAC BIDIRECTIONAL TRIGGER DIODES GLASS PASSIVATED PNPN DEVICE DB3, DB4 DO- 35 Glass Axial Package Functioning as a Trigger Diode with a Fixed Voltage Reference, DB3/DB4 can be

Contextual Info: Doc No. TT4-EA-12479 Revision. 2 Product Standards Schottky Barrier Diode DB3S406F0L DB3S406F0L Silicon epitaxial planar type Unit: mm For high speed switching circuits 1.6 0.26 „ Features 0.13 3 0.85 1.6 y Small reverse current IR y Short reverse recovery time trr

Contextual Info: Doc No. TT4-EA-14659 Revision. 1 Product Standards Schottky Barrier Diode DB3Y313KEL DB3Y313KEL Silicon epitaxial planar type Unit : mm For small current rectification DB3X313K in NMini3 type package 2.9 0.4 0.13 • Features 3 1.4 2.4  Low forward voltage and small reverse leakage current

Contextual Info: DB3TG DIAC FEATURES • ■ n VBO : 32V Low breakover current: 15µA max Breakover voltage range: 30 to 34V DESCRIPTION Functioning as a trigger diode with a fixed voltage reference, the DB3TG can be used in conjunction with triacs for simplified gate control circuits or as

Contextual Info: Doc No. TT4-EA-12493 Revision. 2 Product Standards Schottky Barrier Diode DB3X317K0L DB3X317K0L Silicon epitaxial planar type Unit: mm 2.9 For high frequency rectification 0.4 0.16 3 • Features 1.5 2.8  Low forward voltage VF  Forward current Average IF(AV) = 1 A rectification is possible

Contextual Info: January 1988 Semiconductor MM54HC113/MM74HC113 Dual J-K Flip-Flops with Preset General Description out compatible with the standard 54LS/74LS logic family. All inputs are protected from damage due to static dis­ charge by internal diode clamps to V cc and ground.

SMD diode DB3

Abstract: SMD diode N20 SMD diode DB6 8c 617 transistor AD7545JN AD7545KN AD7545SQ AD7545TQ DB10 AD7545
Contextual Info: a CMOS 12-Bit Buffered Multiplying DAC AD7545 FEATURES 12-Bit Resolution Low Gain TC: 2 ppm/؇C typ Fast TTL Compatible Data Latches Single +5 V to +15 V Supply Small 20-Lead 0.3" DIP and 20-Terminal Surface Mount Packages Latch Free Schottky Protection Diode Not Required

3001C

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. BRDB-300-1C ABDB-300-1C 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES PRV Ratings from 50 to 1000 Volts ACTUAL SIZE SERIES DB300-DB310 and ADB304-ADB308

db3 diac

Abstract: DB6 diac diode db6 diac db3 universal MOTOR speed control DIAc DB4 db3 Ib DB-3 DIAC EQUIVALENT circuit DC34
Contextual Info: DB3/DC34/DB4/DB6 SILICON BIDIRECTIONAL DIAC FEATURES The three layer,two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current,The breakover

BRDB-3500-1B

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. BRDB-3500-1B ADBD-3500-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES SERIES: DB3500 - DB3510 and ADB3504 - ADB3508 PRV Ratings from 50 to 1000 Volts

Contextual Info: DB37315E Silicon epitaxial planar type Unit: mm For high speed switching circuits DB3S315E in SSSMini3 type package • Features  Short reverse recovery time trr  Small reverse current IR  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant

DB3X315E

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3X315E Silicon epitaxial planar type For high speed switching circuits • Features  Package  Short reverse recovery time trr  Small reverse current IR  Contributes to miniaturization of sets, reduction of component count.

DB3S315E0L

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3S315E Silicon epitaxial planar type For high speed switching circuits DB3J315E in SSMini3 type package • Features  Package  Short reverse recovery time trr  Small reverse current IR