DIODE D5 MARKING Search Results

9N20

Contextual Info: SANKEN ELECTRIC CO., LTD. SJPD-D5 1. Scope The present specifications shall apply to an SJPD-D5. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 091120 1／5 61426-01 SANKEN ELECTRIC CO., LTD.

Contextual Info: SO D5 23 PESD5V0X1UAB Ultra low capacitance unidirectional ESD protection diode Rev. 1 — 15 February 2011 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance unidirectional ElectroStatic Discharge ESD protection diode in a

STM5-1-2008

Contextual Info: SO D5 23 PESD5V0X1UB Ultra low capacitance unidirectional ESD protection diode Rev. 1 — 15 February 2011 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance unidirectional ElectroStatic Discharge ESD protection diode in a

MARKING W2 SOT23

Abstract: diode 4148 sot-23 fairchild s sot-23 Device Marking Diode Marking 1p SOT-23 marking code w2 sot23 marking P2 sot-23 On semiconductor date Code sot-23 SOT23 DIODE marking CODE AV fairchild marking codes sot-23 4148SE
Contextual Info: 3 CONNECTION DIAGRAMS 5H 3 3 4148 2 NC 1 1 2 4148CC 2 SOT-23 MARKING MMBD4148 5H MMBD4148CA D6 MMBD4148CC D5 MMBD4148SE D4 1 3 1 2 3 3 1 2 4148SE 1 4148CA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings*

DIODE 5H

Abstract: MMBD4148 MMBD4148 5H diode 4148 sot-23 surge diode marking d6 4148CA 4148SE MMBD4148CA MMBD4148CC MMBD4148SE
Contextual Info: MMBD4148 / SE / CC / CA 3 CONNECTION DIAGRAMS 3 4148 3 4148SE 5H 3 2 NC 1 1 2 1 2 3 3 4148CC 4148CA 2 SOT-23 MARKING MMBD4148 5H MMBD4148CA D6 MMBD4148CC D5 MMBD4148SE D4 1 1 2 1 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics.

M2805

Abstract: APM2805 APM2805QA JESD-22 MO-229 ANPEC c125t
Contextual Info: APM2805QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged

Contextual Info: Connection Diagram 4148 4148SE 3 3 3 3 5H 2 1 1 4148CC MARKING 5H MMBD4148CA D6 MMBD4148 MMBD4148CC D5 MMBD4148SE D4 SOT-23 2 1 1 2 3 3 2 1 1 4148CA 2 Small Signal Diode Absolute Maximum Ratings * Symbol VRRM TA = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage

4148CA

Abstract: 4148SE MMBD4148 MMBD4148CA MMBD4148CC MMBD4148SE
Contextual Info: Connection Diagram 4148 4148SE 3 3 3 3 5H 2 1 1 4148CC MARKING 5H MMBD4148CA D6 MMBD4148 MMBD4148CC D5 MMBD4148SE D4 SOT-23 2 1 1 2 3 3 2 1 1 4148CA 2 Small Signal Diode Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol VRRM Parameter Maximum Repetitive Reverse Voltage

apm28

Abstract: A104 diode
Contextual Info: APM2804QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged

DMA90U1800LB

Contextual Info: DMA 90U1800LB VRRM = 1800 V Id AV M = 99 A IFSM = 320 A Three Phase Rectiier Bridge ISOPLUS Surface Mount Power Device L3 DC+ E72873 L2 D1 D2 D3 L1 L1 L2 L3 D4 D5 D6 DC+ DC- DC- Features Rectiier Bridge Conditions Maximum Ratings VRRM TC = 80°C, sinde 180° (per diode)

4148SE

Abstract: BD4148 MBD4148 4148CA 4148C BD120 marking 5c diode "MARKING 5H"
Contextual Info: M ICDNDUCTOR ! MMBD4148/SE/CC/CA JH CONNECTION 4 1 ^ S O T -23 M M BD 4148 M M B D 4148C C [IT 3 • 4148SE \ * * * * * *2J 5H H] DIAGRAMS j 1 2 NC 3 I 4148C C MARKING 5H M M BD 4148C A D6 D5 M M BD 4148SE D4 1 2 3 I 4148C A High Conductance Ultra Fast Diode

Contextual Info: MIXD80PM650TMI IGBT Modules Multi Level IC80 T1/T4 = 82 A IC80 (T2/T3) = 110 A VCES = 650 V VCE(sat) typ. = 1.5 V XPT IGBT Technology Part name (Marking on product) MIXD80PM650TMI + Th1 D1 G1 Th2 T1 E1 e NTC D5 D2 T2 iv G2 N E2 G3 U D3 T3 E3 t D6 G4 D4 T4

MIXA151W1200EH

Abstract: D6 TRANSISTOR MARKING IC marking code D3 D434
Contextual Info: MIXA 151W1200EH Six-Pack XPT IGBT VCES = 1200 V IC25 = 220 A VCE sat = 1.8 V Part name (Marking on product) MIXA151W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive

Contextual Info: SIEMENS BAR66 Silicon PIN Diode Array • • • Surge protection device Two PIN diodes, series configuration Designed for surge overvoltage clamping in antiparallel connection Type Marking BAR66 PMs Ordering Code taped Pin Configuration 1 2 A1 Q62702-A1473

Contextual Info: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin coniguration see outlines. G2 G4 EU G6 EV EW Features: Application:

G4EU

Abstract: ic MARKING QG E72873 DIODE T6 marking
Contextual Info: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin configuration see outlines. G2 G4 EU G6 EV EW Features: Application:

Contextual Info: MIXA 61H1200ED IGBT XPT Module H Bridge VCES = 1200 V IC25 = 85 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA 61H1200ED 13 D5 D1 1 T1 9 2 T5 10 E72873 16 14 D2 3 T2 4 D6 11 T6 12 17 Features: Application: Package: • Easy paralleling due to the positive

Contextual Info: SIEMENS Silicon Variable Capacitance Diode BB640 • For Hyperband TV/VTR tuners, Bd I 1 Type BB640 Pin Configuration Marking Ordering Code tape and reel 1 2 Q62702-B589 C A red S . Package SOD-323 Maximum Ratings Parameter Symbol Values Unit Reverse voltage

G4EU

Abstract: E72873 MIXA20W1200TMH
Contextual Info: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin configuration see outlines. G2 G4 EU G6 EV

MIAA10WD600TMH

Abstract: E72873
Contextual Info: Advanced Technical Information Converter - Brake - Inverter Module NPT IGBT MIAA10WD600TMH Single Phase Rectifier Three Phase Inverter VRRM = 1600 V VCES = 600 V IDAVM25 = 35 A IC25 IFSM VCE sat = 2.1 V = 270 A = 18 A Part name (Marking on product) MIAA10WD600TMH

E72873

Abstract: MIAA10WF600TMH
Contextual Info: Advanced Technical Information Converter - Brake - Inverter Module NPT IGBT MIAA10WF600TMH Single Phase Rectifier Three Phase Inverter VRRM = 1600 V VCES = 600 V IDAVM25 = IC25 IFSM 90 A = 270 A = 18 A VCE sat = 2.1 V Part name (Marking on product) MIAA10WF600TMH

Contextual Info: Advanced Technical Information Converter - Brake - Inverter Module NPT IGBT MIAA15WD600TMH Single Phase Rectifier Three Phase Inverter VRRM = 1600 V VCES = 600 V IDAVM25 = IC25 IFSM 35 A = 270 A = 23 A VCE sat = 2.1 V Part name (Marking on product) MIAA15WD600TMH

MIAA10WD600TMH

Abstract: Fast Recovery Rectifier, 300V ac motor 150w E72873 22 KW motor FREE ENERGY DIAGRAM
Contextual Info: Advanced Technical Information Converter - Brake - Inverter Module NPT IGBT MIAA10WD600TMH Single Phase Rectifier Three Phase Inverter VRRM = 1600 V VCES = 600 V IDAVM25 = 35 A IC25 IFSM VCE sat = 2.1 V = 270 A = 18 A Part name (Marking on product) MIAA10WD600TMH

MIAA10WF600TMH

Abstract: E72873
Contextual Info: Advanced Technical Information Converter - Brake - Inverter Module NPT IGBT MIAA10WF600TMH Single Phase Rectifier Three Phase Inverter VRRM = 1600 V VCES = 600 V IDAVM25 = IC25 IFSM 90 A = 270 A = 18 A VCE sat = 2.1 V Part name (Marking on product) MIAA10WF600TMH